Detailed study about influence of oxygen on trap properties in SiOxNy by the thermally stimulated current and maximum entropy method |
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| Authors: | Yoshiki Yonamoto Yutaka InabaNaotoshi Akamatsu |
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| Affiliation: | a Yokohama Research Laboratory, Hitachi Ltd., Yokohama, Kanagawa 244-0817, Japan
b Renesas Electronics, Hitachinaka, Ibaraki 312-8504, Japan |
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| Abstract: | The trap amount depending on trap energy levels [Nt(Et)] in various silicon oxynitride films were investigated. Using the thermally stimulated current and the maximum entropy method, we determined Nt(Et) with very high energy resolution. In Nt(Et), many Et were observed between 1.2 and 1.6 eV. Interestingly, their amounts significantly depended on the film compositions. The influence of oxygen on Nt(Et) is also discussed. |
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| Keywords: | Trap Thermally stimulated current Maximum entropy method Silicon oxynitride |
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