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Effects of Sr2+ substitution on the crystal structure,Raman spectra,bond valence and microwave dielectric properties of Ba3-xSrx(VO4)2 solid solutions
Authors:Kai Cheng  Chunchun Li  Changzhi Yin  Ying Tang  Yihua Sun  Liang Fang
Affiliation:1. State Key Laboratory Breeding Base of Nonferrous metals and specific Materials Processing, Guangxi universities key laboratory of non-ferrous metal oxide electronic functional materials and devices, College of Material Science and Engineering, Guilin University of Technology, Guilin, 541004, China;2. College of Information Science and Engineering, Guilin University of Technology, Guilin, 541004, China;3. Key laboratory of inorganic nonmetallic crystalline and energy conversion materials, College of Materials and Chemical Engineering, China Three Gorges University, Yichang, 443002, China
Abstract:
The effects of Sr2+ substitution for Ba2+ on microwave dielectric properties and crystal structure of Ba3-xSrx(VO4)2 (0 ≤ x ≤ 3, BSVO) solid solution were investigated. Such Sr2+ substitution contributes to significant reduction in sintering temperature from 1400 °C to 1150 °C. Both permittivity (r) and quality factor (Q × f) values decreased with increasing x value, which was determined to be related with the descending values of average polarizability and packing fraction, whereas the increase in τf value was explained by the decreased average V />O bond length, A-site bond valence. BSVO ceramics possessed encouraging dielectric performances with <em>∑<sub>r</sub></em> = 12.2–15.6 ± 0.1, <em>Q × f</em> = 44,340 - 62,000 ± 800 GHz, and <em>τ<sub>f</sub></em> = 24.5–64.5 ± 0.2 ppm/°C. Low-temperature sintering was manipulated by adding B<sub>2</sub>O<sub>3</sub> as sintering additive for the representative Sr<sub>3</sub>V<sub>2</sub>O<sub>8</sub> (SVO) ceramic and only 1 wt.% B<sub>2</sub>O<sub>3</sub> addition successfully contributed to a 21.7% decrease in sintering temperature to 900 °C, showing good chemical compatibility with silver electrodes, which render BSVO series and SVO ceramics potential candidates in multilayer electronic devices fabrication.</td>
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Keywords:Corresponding authors at: State Key Laboratory Breeding Base of Nonferrous metals and specific Materials Processing, Guangxi universities key laboratory of non-ferrous metal oxide electronic functional materials and devices, College of Material Science and Engineering, Guilin University of Technology, Guilin, 541004, China.  Ceramics  Dielectric properties  Microwave resonance  Composites
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