| InAs/GaSb Ⅱ类超晶格长波红外探测器背面减薄技术研究 |
| 投稿时间：2020-06-27 修订日期：2020-07-05 点此下载全文 |
| 引用本文：程雨,鲍英豪,肖钰,李春领,亢喆,刘铭.InAs/GaSb Ⅱ类超晶格长波红外探测器背面减薄技术研究[J].红外,2020,41(8):15~20 |
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| 中文摘要:在长波红外波段，InAs/GaSb Ⅱ类超晶格材料具有比碲镉汞材料更优越的性能，因此得到了广泛研究。对InAs/GaSb Ⅱ类超晶格红外探测器芯片的背面减薄技术开展了一系列试验。针对<100>GaSb单晶片进行了单点金刚石机床精密加工、机械化学抛光和化学抛光方法研究，并去除了加工损伤。InAs/GaSb Ⅱ类超晶格红外器件的流片结果表明，长波探测器组件获得了较好的红外成像图片，提高了InAs/GaSb Ⅱ类超晶格长波红外探测器芯片的研制水平。 |
| 中文关键词:InAs/GaSb 单点金刚石机床切削 表面形貌 机械化学抛光 长波红外探测器 |
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| Study on Back Thinning Technologies of Long-wave InAs/GaSb Type-Ⅱ Superlattice Infrared Detectors |
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| Abstract:In long-wave infrared region, InAs/GaSb type-Ⅱ superlattice material has more superior performance than HgCdTe, thus has been widely studied. A series of experiments were carried out on the InAs/GaSb type-Ⅱ superlattice infrared detector to improve the technology level of back thinning. For <100> GaSb single wafers, different single-point diamond turning (SPDT), mechanical chemical polishing and chemical polishing methods were studied. The machining damage was removed. Through the experiments of InAs/GaSb type-Ⅱ superlattice infrared devices, good infrared imaging pictures were obtained by the long-wave detector assembly, which can improve the technology level of InAs/GaSb type-Ⅱ superlattice long-wave infrared detector. |
| keywords:InAs/GaSb single-point diamond turning (SPDT) surface morphology chemical mechanical polishing long-wave infrared detector |
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