退火处理对TiO2薄膜结构和透射的影响

在常温下,采用射频反应磁控溅射方法在不同溅射功率下于K9双面抛光玻璃基底上制备二氧化钛薄膜.将制备的样品进行450℃退火6h热处理.利用X射线衍射仪(XRD)对比分析了退火前后薄膜的微观结构,采用光栅光谱仪测试了退火前后薄膜样品的透射谱.实验结果表明,退火前薄膜样品是非晶态,退火后薄膜晶化为晶态,但不同溅射功率下制备的薄膜结晶取向有差异;退火热处理对薄膜的折射率有一定影响,表现为退火前后透射谱偏移.     

退火处理对N掺杂Al:ZnO薄膜结构及性能的影响

采用射频磁控溅射方法,常温条件下以N2作为N掺杂源,在玻璃基底制备了N掺杂Al:ZnO薄膜。在真空氛围下对样品进行了不同温度的退火处理15 min。通过X射线衍射、霍尔效应测试、紫外-可见光谱和X射线光电子能谱(XPS)仪分析了退火对样品结构和光电性能的影响。结果表明真空400℃退火15 min时成功制备出性能优异的p型ZnO薄膜,其空穴载流子浓度为3.738×1020cm~(-3),电阻率为1.299×10~(-2)Ω·cm,样品可见光透射率达到了85%以上。XPS分析说明No受主缺陷的含量大于(N2)o施主缺陷导致薄膜实现了p型转变。     

退火工艺对溶胶凝胶Pb(Zr0.52Ti0.48)O3薄膜残余应力的影响

使用溶胶凝胶法制备了Pb(Zr0.52Ti0.48)O3 铁电薄膜,分别利用原子力显微镜、X射线衍射及面探扫描技术分析了薄膜的组织结构,并运用掠入射X射线衍射法研究了不同工艺条件下制备的薄膜的残余应力.研究表明溶胶凝胶薄膜在600℃退火30min后完全晶化,组织结构均匀.不同工艺下制备的薄膜均受残余拉应力,随着退火温度及退火时间的延长,薄膜中的残余应力逐渐增大,而随着薄膜厚度的增加,残余应力先增大然后减小.     

退火温度对Ge-SiO2薄膜结构的影响

用射频磁控溅射制备了Ge-SiO2薄膜，在N2的保护下对薄膜进行了不同温度的退火处理。使用傅里叶变换红外光谱分析（FTIR）技术，X射线衍射谱（XRD），X射线光电子能谱（XPS）分析样品的微结构，研究样品在退火中发生的结构，组分的变化，结果表明退火温度对薄膜的结构，尤其是薄膜中的GeO含量和GeO晶粒的大小的影响是显著的，并对其做了详尽的分析讨论。     

在SOI材料上制备高质量的氧化铪薄膜

用电子束蒸发氧化铪靶的方法．在SOI(绝缘体上硅)材料上制备了氧化铪薄膜，随后在氮气中进行快速退火(600℃．300s)。借助掠角X射线衍射(GAXRD)、X射线光电子能谱(XPS)、高分辨透射电镜(HRTEM)技术分析了样品的微观结构．研究了样品在退火前后发生的组成及结构变化．结果表明退火后氧化铪薄膜由退火前的非晶态转变为单斜结构的多晶态，薄膜中的O／Hf原子比较退火前更接近化学计量比2。借助扩展电阻探针(SRP)技术考察了退火前后薄膜的电学性能．证明在SOI材料上制备的多晶氧化铪薄膜同样具有较好的电介质绝缘性能。     

电子束蒸发a-Si:Co薄膜的离子注入改性研究

用电子束蒸发技术制备非晶硅薄膜,不同剂量Co离子注入后真空退火改性.X射线衍射法分析了样品的物相变化特征,发现Co离子注入可诱导非晶硅结晶,有一优化注入剂量5×1016ions/cm-2,使晶化Si(111)峰最强.还测量了非晶硅薄膜电阻率,揭示薄膜电阻温度系数随Co离子掺杂浓度和退火温度改变的规律;在退火温度500℃,离子注入量5×1015ions/cm-2条件下,获得TCR系数高达-2.5%的薄膜材料.     

电子束蒸发a-Si∶Co薄膜的离子注入改性研究

用电子束蒸发技术制备非晶硅薄膜,不同剂量Co离子注入后真空退火改性。X射线衍射法分析了样品的物相变化特征,发现Co离子注入可诱导非晶硅结晶,有一优化注入剂量5×1016ions/cm-2,使晶化Si(111)峰最强。还测量了非晶硅薄膜电阻率,揭示薄膜电阻温度系数随Co离子掺杂浓度和退火温度改变的规律;在退火温度500℃,离子注入量5×1015ions/cm-2条件下,获得TCR系数高达-2.5%的薄膜材料。     

原子层沉积低温制备高取向锐钛矿TiO_2薄膜

利用原子层沉积(ALD)法分别在Si和石英衬底上制备了Ti O_2薄膜,并在N2氛围下对Ti O_2薄膜样品进行退火处理。采用X射线衍射、原子力显微镜和场发扫描电子显微镜对不同退火温度下样品晶体结构、表面形貌进行了分析。利用紫外-可见分光光度计对不同退火温度下的Ti O_2薄膜进行了光学性能测试,并分析了退火温度对其光学带隙的影响。发现利用ALD方法制备的沉积态Ti O_2薄膜为高度择优取向的锐钛矿结构;当退火温度升高到600℃时,Ti O_2薄膜晶体结构类型仍为锐钛矿型,晶粒略有变大;退火态Ti O_2薄膜粗糙度比沉积态Ti O_2薄膜的粗糙度大,而且粗糙度随退火温度升高而增大。根据薄膜的透射光谱拟合了光学带隙,退火后薄膜禁带宽度略有变宽,吸收边缘发生蓝移。     

退火温度对CsI(Tl)薄膜微观结构和闪烁性能的影响

采用真空热蒸发法制备了CsI(Tl)薄膜, 然后进行了不同温度的真空热处理．用X射线衍射仪、扫描电子显微镜、X射线荧光光谱仪及正电子寿命谱仪对CsI(Tl)薄膜样品进行了分析, 并测得了样品的光产额．结果表明, 该CsI(Tl)薄膜沿(200)晶面择优取向生长．经过较低温度退火, CsI薄膜中的Tl⁺离子向薄膜表面扩散, 薄膜中缺陷数量增加, 且尺寸较大, 光产额略微增高．经过250℃退火, 薄膜中低温退火所形成缺陷得到恢复, 薄膜缺陷尺寸变小, 且数目减少, 具有较好的结晶状态, 光产额提高．经过400℃退火, 薄膜结构发生显著变化, 薄膜中缺陷大幅增加, 结晶状态变差, Ti+含量减少, 光产额急剧下降．     

真空退火对VOx薄膜相结构及表面形貌的影响

以V2O5粉末为原料,采用无机溶胶-凝胶法制备了V2O5凝胶膜,经过真空退火处理得到了以VO2为主的薄膜。利用X射线衍射(XRD)和原子力显微镜(AFM)对不同实验条件下得到的薄膜的物相和表面形貌进行分析,得出了VOx薄膜相结构及表面形貌与真空退火条件之间的关系。     

Comparative Study of the Crystallization Behavior of Fe-Cr-B-Si in Bulk and Thin Film Forms

A pulsed laser deposition technique was used to obtain Fe-Cr-B-Si metallic glass in a thin film form using the amorphous Fe₇₇Cr₂B₁₆Si₅ ribbon as a target. Subsequently the as-deposited films were annealed at the same conditions as the ribbon samples in order to compare their crystallization behaviors. The structure and magnetic properties of the bulk and the surface layer of the samples were characterized by transmission and conversion electron Mössbauer spectroscopy, respectively. Significantly different crystallization behavior was observed for the ribbon and thin film samples.     

Effect of precursor on epitaxially grown of ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate by hydrothermal technique

Single crystalline ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate, using two different precursors by hydrothermal route at a temperature of 90 °C were successfully grown. The effect of starting precursor on crystalline nature, surface morphology and optical emission of the films were studied. ZnO thin films were grown in aqueous solution of zinc acetate and zinc nitrate. X-ray diffraction analysis revealed that all the thin films were single crystalline in nature and exhibited wurtzite symmetry and c-axis orientation. The thin films obtained with zinc nitrate had a more pitted rough surface morphology compared to the film grown in zinc acetate. However the thickness of the films remained unaffected by the nature of the starting precursor. Sharp luminescence peaks were observed from the thin films almost at identical energies but deep level emission was slightly prominent for the thin film grown in zinc nitrate.     

Microstructure formation during the annealing of iron nitrides

The thermal metastability of iron nitride was exploited to fabricate thin-film microstructures applicable to left-handed metamaterials. A granular thin film containing dispersed iron particles was prepared by post-annealing an rf-sputter-deposited Fe_0.5Al_0.5N thin film with a wurtzite-type structure in a nitrogen atmosphere at 450 °C. The obtained samples showed magnetic resonance in the microwave region. Laser direct writing was also applied in a nitrogen atmosphere to an rf-sputter-deposited Fe_0.7Al_0.3N thin film. 200 μm-wide, 300 Ω cm iron metal lines were drawn in a host nitride film of approximately 2 kΩ cm. Combining and optimizing the above negative permeability and permittivity values should provide left-handed materials with a negative refractive index.     

Morphology controlled fabrication and ferroelectric properties of vertically aligned one-dimensional lead titanate nanoarrays

Vertically aligned nanowires and highly uniform nanoporous array thin films of PbTiO(3) are synthesized by varying anodic oxidation conditions of Ti foil followed by hydrothermal reaction in an aqueous Pb(II) acetate trihydrate solution. As-synthesized samples have single crystalline nanowire structure and polycrystalline nanoporous structure, although both are pure PbTiO(3) with a tetragonal phase. The structure of intermediate TiO(2) films obtained from different anodic oxidation conditions determines the structure of the product PbTiO(3). The relationships between these morphological structures and ferroelectric properties are investigated. Piezoresponse force microscopy reveals that both these films show ferroelectricity with clear phase contrast and well-defined hysteresis loops. The saturated longitudinal piezoelectric coefficient field (E(c)) of the nanowire sample is smaller than that of nanoporous thin film. Thus, polarization of nanowire thin film is larger in magnitude and easier to flip than that of nanoporous film.     

薄膜太阳能电池的技术特点及前景展望

本文着重阐述了非晶硅薄膜电池、多晶硅薄膜电池、铜铟硒系薄膜太阳能电池以及染料敏化二氧化钛薄膜太阳能电池生产技术方法以及研究方向，特别介绍了一些薄膜太阳能电池的实验室样品和组件的最高光电转化效率。并从材料、工艺与转换效率等方面讨论了它们的优势和不足之处。同时介绍了国内外薄膜太阳电池研究的进展，展望了薄膜太阳能电池的发展前景。     

Diffusion characteristics of boron and phosphorus in polycrystalline silicon

Grain boundary diffusion of dopants (boron and phosphorous) in silicon is discussed. The appropriate models and equations are presented both for semi-infinite and for thin film boundary conditions. Data reported in the literature for both thick and thin samples have generally been analyzed using models appropriate to diffusion in a homogeneous semi-infinite substrate. These data were reanalyzed using the appropriate boundary conditions and a more realistic model of the inhomogeneous nature of diffusion in polycrystalline samples. It was shown that, even though the relation between diffusion depth and time may be the same from bulk and grain boundary models, the diffusion coefficients determined from assuming the homogeneous semi-infinite solid may be several orders of magnitude in error for the pre-exponential factor, and the activation energy will also be wrong. Grain boundary diffusion coefficients for arsenic, boron and phosphorus in silicon were determined.     

YSZ thin films deposited by e-beam technique

YSZ thin films were grown evaporating cubic and tetragonal phase ZrO₂ stabilized by 8 wt.% of Y₂O₃ (8% of YSZ) ceramic powders by using e-beam deposition technique. Operating technical parameters that influence thin film properties were studied. The influence of substrate crystalline structure on growth of deposited YSZ thin film was analyzed there. The YSZ thin films (1.5-2 μm of thickness) were deposited on three different types of substrates: Al₂O₃, optical quartz (SiO₂), and Alloy 600 (Fe-Ni-Cr). The dependence of substrate temperature, electron gun power, and phase of ceramic powder on thin film structure and surface morphology was investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The substrate temperature was changed in the range of 20-600° C (during the YSZ thin film deposition) and its influence on the crystallinity of deposited YSZ thin films was analyzed. It was found that electron gun power and substrate temperature has the influence on the crystallite size, and texture of YSZ thin films. Also, the substrate has no influence on the crystal orientation. The crystallite size varied between 20 and 40 nm and increased linearly changing the substrate temperature. The crystal phase of evaporated YSZ powder has the influence on the structure of the deposited YSZ thin films.     

Synthesis of c-axis oriented AlN thin films on different substrates: A review

Highly c-axis oriented AlN thin films have been deposited by reactive sputtering on different substrates. The crystallographic properties of layered film structures consisting of a piezoelectric layer, aluminum nitride (AlN), synthesized on a variety of substrates, have been examined. Aluminum nitride thin films have been deposited by reactive pulsed-DC magnetron sputtering using an aluminum target in an Ar/N₂ gas mixture. The influence of the most critical deposition parameters on the AlN thin film crystallography has been investigated by means of X-ray diffraction (XRD) analysis of the rocking curve Full-Width at Half Maximum (FWHM) of the AlN-(0 0 0 2) peak. The relationship between the substrate, the synthesis parameters and the crystallographic orientation of the AlN thin films is discussed. A guide is provided showing how to optimize these conditions to obtain highly c-axis oriented AlN thin films on substrates of different nature.     

CL-20基薄膜炸药的爆轰特性研究

采用重结晶方法细化的CL-20炸药进行CL-20基薄膜炸药制备。研究了CL-20基薄膜炸药的爆轰性能、熄爆厚度和拐角效应,并与HMX基薄膜炸药进行对比。研究结果表明:在装药相对密度为85%时,CL-20基和HMX基薄膜炸药的爆速分别为8 393 m/s和8 069 m/s;CL-20基和HMX基薄膜炸药的熄爆厚度分别为0.23 mm和0.41 mm;相比HMX基薄膜炸药,CL-20基薄膜炸药的熄爆厚度更小,传爆能力更强。     

采用旋转镀膜技术的溶液沉积法合成的LiMn2O4薄膜形貌与合成条件之间的关系研究

通过旋转镀膜技术的溶液沉积法制备LiMn2O4薄膜,详细讨论了影响LiMn2O4薄膜形貌的各种因素.研究表明前驱体溶液溶剂、溶液浓度、匀胶速度、升温速度以及加热分解温度和时间等对薄膜形貌有重大影响.实验表明LiMn2O4前驱体溶液浓度为0.2mol/L,匀胶速度为3000r/min,匀胶时间为30s,加热分解温度350℃,加热分解时间20min,升温速度为10℃/min为较为理想的一组合成条件.