共查询到20条相似文献,搜索用时 31 毫秒
1.
A novel InGaAsP/InP buried‐ridg waveguide laser diode structure is proposed and demonstrated for use as a single‐mode laser. The lateral mode of the proposed device can be controlled by adjusting the composition and thickness of the InGaAsP layer grown over the active region. Stable single‐mode operation without kinks or beam‐steering is achieved successfully with lateral and transverse in the junction plane even for the device with the ridge width of 9 μm up to an injection current of 500 mA. 相似文献
2.
Jing-Kaung Chen Si-Chen Lee 《Quantum Electronics, IEEE Journal of》1987,23(8):1283-1286
Ridge waveguide lasers of two different cavity configurations are described. First is the multisection ridge laser structure in which the longitudinal mode selection due to the coupled-cavity effect was observed and single-frequency operation was achieved. In this structure, stable single-transverse-mode operation was ensured by the central 5 μm wide section, and the beam waist and power output were enlarged by the outer 10 μm wide sections. Output power of more than 13 mW under pulsed excitation was obtained. The second configuration is the shallow groove ridge laser in which the 5 μm wide shallow groove terminates slightly above the active region and provides an index perturbation that contributes to mode selection. All the lasers are designed to emil in the visible range between 7600 and 7900 Å. The shortest observed wavelength is 7570 Å, and can be seen by the naked eye. 相似文献
3.
高功率850 nm宽光谱大光腔超辐射发光二极管 总被引:4,自引:0,他引:4
超辐射发光二极管(SLD)具有不同于半导体激光器和普通发光二极管的优异性能。为提高半导体超辐射发光管的光谱宽度,采用非均匀阱宽多量子阱(MQW)材料拓宽超辐射器件的输出光谱。优化设计器件的波导结构,利用大光腔结构设计出高功率、低发散角850 nm超辐射发光二极管。采用直波导吸收区而后在器件的出光腔面上镀制抗反射膜的方法制作超辐射发光二极管。器件在140 mA时器件半峰全宽(FWHM)可以达到26 nm,室温下连续输出功率达到7 mW。器件的垂直发散角为28°,水平发散角为10°。由于器件具有比较小的发散角,与光纤耦合时具有比较高的耦合效率,单模保偏光纤耦合输出功率达到1.5 mW。 相似文献
4.
The tapered quantum cascade lasers operating at about 9.0μm are reported. In contrast to the common ridge waveguide laser, tapered devices give rather small horizontal beam divergence. Performances of devices with identical 11μm ridge waveguide sections and different tapered gain sections are comparatively studied. The optimal taper angle of 3° leads to a relative high output power and a very small horizontal beam divergence of 7.1°. 相似文献
5.
A short-wavelength (~0.8 μm) GaAs/AlGaAs graded-index separate-confinement heterostructure quantum-well laser has been monolithically integrated with a long-wavelength (~8 μm) GaAs/AlGaAs multiple-quantum-well infra-red photodetector on a semi-insulating GaAs substrate by molecular beam epitaxy. The vertical integration method is used and the combined structure is a pinin structure. Both the laser and detector exhibit excellent characteristics. At room temperature, the ridge waveguide laser has an extremely low threshold current of 25 mA and a differential quantum efficiency above 65% with a stripe width of 20 μm. The quantum-well detector has a peak response at 8 μm and a responsivity of 0.7 A/W 相似文献
6.
Lianping Hou Hongliang Zhu Qiang Kan Ying Ding Baojun Wang Fan Zhou Wei Wang 《Photonics Technology Letters, IEEE》2005,17(11):2259-2261
A ridge distributed feedback laser monolithically integrated with a buried-ridge-stripe spot-size converter operating at 1.55 micrometre wavelength was successfully fabricated by means of low-energy ion implantation quantum-well intermixing and dual-core technologies. The passive waveguide was optically combined with a laterally exponentially tapered active core to control the mode size. The devices emit in a single transverse and single longitudinal mode with a sidemode suppression ratio of 38.0 dB. The threshold current was 25 mA. The beam divergence angles in the horizontal and vertical directions were as small as 8.0 degree X 12.6 degree, respectively, resulting in 3.0-dB coupling loss with a cleaved single-mode optical fiber. 相似文献
7.
We demonstrate a 1.55-μm wavelength, InGaAsP-InP, twin-waveguide (TG) laser integrated with passive ridge waveguides using low-loss taper couplers. The lateral taper on the laser waveguide induces efficient resonant coupling of light between the active and passive layers. The device is fabricated using low-cost conventional photolithography and reactive ion etching of a TG structure grown by gas-source molecular beam epitaxy. This structure is suitable for integrating a variety of photonic devices without requiring epitaxial regrowth 相似文献
8.
Sang-Wan Ryu Sung-Bock Kim Jae-Sik Sim Jeha Kim 《Photonics Technology Letters, IEEE》2003,15(1):12-14
A 1.55-/spl mu/m spot-size converter integrated laser diode is demonstrated with conventional buried-heterostructure laser process. For the spot-size converter, we employed a double-waveguide structure in which a ridge-based passive waveguide was incorporated. The passive waveguide was optically combined with a laterally tapered active waveguide to control mode size. The threshold current was measured to be 5 mA together with high slope efficiency of 0.45 W/A. The beam divergence angles in the horizontal and vertical directions were as small as 9.0/spl deg/ and 7.8/spl deg/, respectively. 相似文献
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通过优化脊形波导的结构参数可以降低脊形波导激光器的阈值电流,提出了实现亚微米脊宽,从而降低阈值电流的方法。针对脊形波导制作过程中蚀刻深度不易控制的问题,对GaInP/AlGaInP材料中加入蚀刻阻挡层进行了研究。 相似文献
12.
Jun Zhao L. Li Wumin Wang Yicheng Lu 《Photonics Technology Letters, IEEE》2003,15(11):1507-1509
High-power InGaAs-GaAsP-AlGaAs strain-compensated separate-confinement heterostructure double quantum-well lasers emitting at 980-nm wavelength have been grown by low-pressure metal-organic epitaxial chemical vapor deposition. Fabricated with a ridge waveguide, the lasers achieved an output power of 386 mW in the fundamental lateral mode without any kink being observed. By optimizing the laser structure parameters, a very low transverse beam divergence of 22.1/spl deg/ and a high slope efficiency of up to 0.89 mW/mA were obtained. The narrow transverse far field enables an output power of over 290 mW to be coupled into a single-mode fiber with a high coupling efficiency of 83.2% at 430 mA. Life testing at various powers shows excellent long-term reliability after 3500 h. 相似文献
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14.
Kongas J. Savolainen P. Toivonen M. Orsila S. Corvini P. Jansen M. Nabiev R.F. Pessa M. 《Photonics Technology Letters, IEEE》1998,10(11):1533-1535
In this letter, the authors report a very high quantum efficiency of 91% for antireflection/high-reflection-coated GaInP-AlGaInP ridge waveguide laser diodes operating at 650 nm range. The laser structure was grown by solid-source molecular beam epitaxy. The laser diodes performed stable single-mode operation up to 60 mW. Threshold current as low as 50 mA was measured for 5.5×600 μm2 laser diodes. To the authors' best knowledge, this is among the best ever reported efficiency for visible lasers 相似文献
15.
Wu D. Wang H. Wu B. Ni H. Huang S. Xiong Y. Wang P. Han Q. Niu Z. Tangring I. Wang S.M. 《Electronics letters》2008,44(7):474-475
Very low threshold current density InGaAs/GaAs quantum well laser diodes grown by molecular beam epitaxy on InGaAs metamorphic buffers are reported. The lasing wavelength of the ridge waveguide laser diode with cavity length of 1200 mum is centered at 1337.2 nm; the threshold current density is 205 A/cm2 at room temperature under continuous-wave operation. 相似文献
16.
Single mode laser diodes on GaAs substrates were developed using GalnNAsSb double quantum well active regions grown by molecular beam epitaxy. The distributed feedback devices were fabricated using a regrowth-free process in which lateral Cr gratings were deposited adjacent to a dry-etched narrow ridge waveguide. In continuous- wave (CW) operation the devices exhibit a lasing wavelength of 1550 nm at 10degC with a very high sidemode suppression ratio of > 50 dB throughout most of the operational range, and output power up to 15 mW. 相似文献
17.
A new transverse-junction ridge waveguide AlGaAs-GaAs multiple-quantum-well laser is demonstrated. The combination of the ridge structure and transverse junction yields advantages of stable index guiding, and a greatly simplified fabrication process with a rapid thermal diffusion time as short as three minutes 相似文献
18.
The fabrication and performance characteristics of GaAs/GaAlAs ridge waveguide lasers are discussed. Threshold currents as low as 8 mA and differential quantum efficiencies as high as 90% were obtained for 250-μm-long graded-index separate-confinement heterostructure with single quantum well (GRINSCH SQW) lasers. High-speed short-cavity ridge waveguide lasers for which both the ridge stripe and one-mirror facet were formed by Ar-ion beam etching were achieved. The dependence of threshold current and lasing spectra on the cavity length were theoretically and experimentally investigated. This process was successfully used to integrate a laser diode monolithically with a photodiode or a field-effect transistor 相似文献
19.
提出一种改进的曲折槽波导—曲折双脊槽波导提高太赫兹行波管的功率和带宽.针对这种新型慢波结构设计了一种新的传输波导作为输入输出能量耦合器.从高频特性仿真结果可以发现曲折双脊槽波导可以提高耦合阻抗并扩展带宽.此外, 粒子仿真结果表明当电子注加载27.4kV电压和0.25A电流时, 新型曲折双脊槽波导行波管在中心频率340GHz处输出功率能达到65.8W同时对应增益27.21dB.因此, 曲折双脊槽波导行波管可以用作宽带和高功率太赫兹辐射源. 相似文献
20.
B. Boche R. Muller G. Bohm G. Trankle G. Weimann 《Photonics Technology Letters, IEEE》1996,8(12):1591-1593
A novel technique for the monolithic integration of a laser and a directional coupler in the GaAs-AlGaAs material system is demonstrated. The combination of single-step molecular beam epitaxy (MBE) on a planar substrate, vertical coupling of light between the active and passive waveguide in a p-n-p-doped structure and the use of a self-aligned fabrication process for the ridge waveguides in the active and passive sections results in a threshold current of 52 mA and an output power of up to 0.6 mW. The directional coupler is completely switched at an applied bias of 4.0 V. 相似文献