共查询到19条相似文献,搜索用时 140 毫秒
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光学薄膜厚度均匀性的理论计算 总被引:4,自引:0,他引:4
光学薄膜厚度均匀性对薄膜特性产生重要影响。本文介绍旋转平面和球面夹具在余弦和非余弦分布条件下的膜厚计算方法,并给出了计算结果。同时指出了基板和蒸发源倾斜对均匀性的可能影响。 相似文献
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本文对全息光栅掩模制备中光刻胶薄膜的应力与厚度均匀性问题进行了研究。应用干涉法及Stoney公式计算的分析结果,对SiO2基底上光刻胶薄膜的应力进行了研究。对膜厚的均匀性采用干涉显微镜在同一样品,不同直径上多点测量的方法,初步得出光刻胶薄膜膜厚均匀性的分布规律。分组变换加速度,转速,匀胶时间等参数,并对结果进行比较,发现在匀胶转速相同的前提下,光刻胶薄膜应力值随加速度的降低面减小,光刻胶薄膜的均匀性随加速度的增加而变好。在3000rpm至4000rpm的低转速时,光刻胶薄膜样品的膜厚均匀性好。出此,在全息光栅匀胶工艺中,要选择适当的转速的加速度,以得到应力较小和均匀性较好的光刻胶薄膜。与此同时,薄膜膜厚均匀性呈现出中间薄,边缘较厚的规律。 相似文献
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王之哲陈思唐莎孙宇王小强 《电子元件与材料》2018,(12):72-76
固态微波器件能够实现微波功率的发射、放大、控制和接收,在移动通讯、雷达等领域有着重要的应用。但是固态微波器件在实际测试中易发生自激振荡,影响其正常工作,甚至会造成永久性的损坏。而良好的测试夹具设计可以有效防止自激振荡现象的发生。因此本文通过分析固态微波器件自激振荡的产生机理,研究制定自激振荡的有效消除措施,提出了固态微波器件防自激测试夹具设计准则,并选取典型GaN微波功率晶体管开展夹具研制加以验证。器件多次重复测试均未发生自激振荡,而且测试结果一致性较好,表明形成的固态微波器件防自激测试夹具设计准则合理可行,能够有助于实现固态微波器件性能参数的精确测试,支撑研制单位的工艺改进和质量提升。 相似文献
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提出一种新型结构的表面传导电子发射导电薄膜,该导电薄膜在中间位置向内有凹陷,基于电形成过程中焦耳热引起薄膜龟裂的原理,会在凹陷附近诱导纳米级裂缝形成,控制纳米裂缝形成位置。分析了此结构导电薄膜对裂缝产生位置的影响及2种不同电形成方法对裂缝形貌的影响,测试了电子发射性能,得到了发射电流特性曲线和发光图像。实验结果表明,这种新型导电薄膜能一定程度上控制纳米裂缝的形成位置,有利于改进表面传导电子发射的均匀性,在阳极高压2.0kV、阴极板电子发射单元施加的器件电压14V时,新型结构导电薄膜实现了均匀发光,发射电流最大为18μA。 相似文献
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采用准分子激光扫描消融法淀积性能均匀的YBa_2Cu_3O_(7-δ)高温超导薄膜,用离子束刻蚀进行器件的图形制备,获得了非均匀性小于10%的YBa_2Cu_3O_(7-δ)高温超导薄膜8元线列探测器.测试了器件在8~14μm波段的性能及光响应特性,单元探测器为40×100μm2的微桥结构.器件的平均归一化探测率为1.44×109cmHz1/2w-1,平均噪声等效功率为4.4×10-12WHz-1/2,D的非均匀性小于10%.研究结果表明:该线列探测器具有良好的均匀性,证实了该工艺适用于制备均匀性良好的高温超导薄膜红外探测器阵列. 相似文献
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为解决高分子聚酯材料的音膜在使用过程中存在中频失真、发声性能有缺陷等问题,针对音膜在发声器件中的作用和特点,提出了一种新型高分子音膜材料激光改性工艺。采用不同功率,固定波长为975 nm的半导体连续激光辐照音膜表面,在保证其表面完整性的情况下获得不同的改性效果。结果表明,经激光辐照后,音膜试样材料表面完好,无破损、变形;音膜表面粗糙度降低,有利于提高音膜振动的一致性和均匀性;音膜失真、谐振频率等声学性能得以改善,产品的发声品质显著提高。试验所得结果对于当前采用高分子聚酯材料作为音膜的发声器件快速、高效地提升市场竞争力有着重要意义。 相似文献
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A spacer lithography process technology, which uses a sacrificial layer and spacer layer formed by chemical vapor deposition (CVD), has been developed. It has been applied to make a sub-40-nm Si-fin structure for a double-gate FinFET with conventional dry etching for the first time. The minimum-sized features are defined not by the photolithography but by the CVD film thickness. Therefore, this spacer lithography technology yields better critical dimension uniformity than conventional optical or e-beam lithography and defines smaller features beyond the limit of current lithography technology. It also provides a doubling of feature density for a given lithography pitch, which increases current by a factor of two. To demonstrate this spacer lithography technology, Si-fin structures have been patterned for planar double-gate CMOS FinFET devices 相似文献
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Tae-Wook Kim Seung-Hwan Oh Hyejung Choi Gunuk Wang Hyunsang Hwang Dong-Yu Kim Takhee Lee 《Electron Device Letters, IEEE》2008,29(8):852-855
This letter describes the reversible switching performance of metal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (Ion/Ioff ~ 104), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 degC, and an excellent device-to-device switching uniformity. 相似文献
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Laser Induced Thermal Imaging (LITI) is a laser addressed thermal patterning technology with unique advantages such as excellent uniformity of transfer film thickness, capability of multilayer stack transfer, high resolution and scalability to large-size mother glass. However, the deterioration of the device performance during imaging process has been an obstacle to use it as a commercial technology. To investigate a possibility of thermal deformation of organic materials as a transfer layer and a receptor layer during imaging process, we executed a preliminary annealing test by using standard green devices at various temperatures. By comparison of these results with those obtained from LITI devices, we found that the main reason of device deterioration could be originated from the mobility change of the organic layers. Hence, we developed the dwell time control technology to suppress the thermal impact during LITI process and we finally obtained current efficiency which is quite equivalent to that obtained from the standard evaporation devices. 相似文献
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The continuous progress in thin film materials and devices has greatly promoted the development in the field of flexible electronics.As one of the most common thin film devices,thin film transistors (TFTs) are significant building blocks for flexible platforms.Flexible oxide-based TFTs are well compatible with flexible electronic systems due to low process temperature,high carrier mobility,and good uniformity.The present article is a review of the recent progress and major trends in the field of flexible oxide-based thin film transistors.First,an introduction of flexible electronics and flexible oxide-based thin film transistors is given.Next,we introduce oxide semiconductor materials and various flexible oxide-based TFTs classified by substrate materials including polymer plastics,paper sheets,metal foils,and flexible thin glass.Afterwards,applications of flexible oxide-based TFTs including bendable sensors,memories,circuits,and displays are presented.Finally,we give conclusions and a prospect for possible development trends. 相似文献
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InAlSb/InSb薄膜材料的晶体质量会直接影响器件的性能。提高薄膜材料的晶体质量可以有效降低器件的暗电流,提高探测率和均匀性等。主要报道了掺铝锑化铟分子束外延技术的初步研究结果。通过采用多种测试方法对InAlSb分子束外延膜的晶体质量进行了分析,找出了影响晶体质量的因素,提高了InAlSb分子束外延的技术水平。实验结果表明,通过优化生长温度、束流比、升降温速率以及退火工艺等生长条件,可以获得高质量的InAlSb分子束外延膜。 相似文献