A double Nyquist digital product detector for quadrature sampling

A technique for digitally obtaining the in-phase (I) and quadrature (Q) components of an IF signal is presented. Initially, the input bandpass signal is mixed to a carrier frequency that is one-fourth of the sampling rate of a single A/D converter. The digitized bandpass signal is converted into its I and Q components at one-half the A/D sample rate by a digital product detector (DPD) composed of a commutator, two sign alternators, and two FIR fractional-phase interpolator filters. This simple structure can yield image performance that is limited by A/D quantization using relatively low interpolator filter orders and IF bandwidths as large as one-half the sampling rate of the A/D converter. The DPD performs Nyquist limit demodulation of the sampled bandpass signal and, therefore, requires a minimal sampling rate. The theory of operation, an analytic proof, design methodology, and simulated performance results are presented. Simulated results show that -86 dB images can be obtained with 8-tap FIR interpolators and a 12 bit A/D converter. A VLSI implementation is also presented     

I/Q channel reversal correcting properties of anSQPSK Costas loop with integrated symbol synchronization

An integrated-carrier loop/symbol synchronizer, using a digital Costas loop with matched arm filters to demodulate staggered quaternary phase-shift keyed (QPSK) signals, is analyzed. An expression is derived for the S curve, parameterized by bit synchronization error. This result suggests that the demodulator structure offers an inherent I/Q channel reversal correcting capability. Computer simulation results are presented that support this conclusion, and suggest that ambiguity resolution performance depends on the ratio of carrier and synchronization loop bandwidths     

A novel demodulator/detector for digital and analog signals on LMRchannels

The design, implementation, and performance of an all-digital demodulator/detector suitable for differential phase-shift keying (DPSK), continuous-phase frequency-shift keying (CPFSK), frequency-shift keying (FSK), and analog FM are discussed. In this modulator/detector, two detectors, one noncoherent and another differentially coherent, operate simultaneously to provide data detection and automatic frequency control (AFC). Test results indicate that the system provides improved performance over the conventional analog quadrature detector for two-period raised-cosine (2RC) CPFSK modulation in additive white Gaussian noise (AWGN) and Rayleigh fading channels. Being all-digital, the demodulator/detector is well suited for integrated circuit implementation. In addition, the system performs as well as the analog quadrature detector for analog FM voice transmissions, thereby maintaining full compatibility with analog land mobile radio (LMR) transmissions     

A simple interferometric method for monitoring mode hopping intunable external-cavity semiconductor lasers

The mode-hopping events in a 1.3-μm grating-tuned external-cavity laser are analyzed on the basis of interferometric measurements. The average frequency of mode hopping for a 7.5-cm external-cavity laser is estimated and is expressed as f_c =2.7×10⁶×exp [-1.7/(I/I _th-1)] (hertz) for 0.07⩽(I/I_th -1)⩽0.8 (I=injection current and I_th =threshold current). The mode-hopping monitoring signal was negatively fed back to the laser using an automatic control circuit which maintained single-mode operation while the wavelength of the grating external-cavity laser was tuned     

False lock in quadriphase receivers with unequal I- andQ-channel data rates

Results are presented concerning the noise-free false lock problem in quadriphase receivers with unequal I-channel and Q-channel data rates. It is shown that false lock may occur when the incoming carrier frequency and the loop VCO (voltage-controlled oscillator) frequency differ by an amount that is a linear combination of a quarter of I-channel and Q-channel data rates. General expressions for the false lock performance of quadriphase receivers are given for random as well as periodic data patterns. Specific closed-form expressions for the false lock margin are derived when the arm filters of the quadriphase receivers are single-pole Butterworth filters, and the format of the random data is NRZ (nonreturn-to-zero). Numerical evaluations of false lock margin as a function of the product of 3 dB arm-filter bandwidth and symbol duration are carried out for random data using various arm filters and for different periodic I-channel and Q-channel data patterns     

Differential detection of π/4-shifted-DQPSK for digital cellularradio

The detection of π/4-shifted-DQPSK modulation using a tangent-type differential detector with an integrated symbol timing and carrier frequency offset correction algorithm is discussed. π/4-shifted-DQPSK modulation has been proposed for use in a high-capacity, TDMA-based digital cellular system being developed in the US; differential detection could potentially allow the production of low-complexity mobile units. Results obtained using the proposed IS-54 TDMA frame structure for base to mobile transmissions are presented. Theoretical and simulation bit-error-rate (BER) results are presented for static and Rayleigh fading channels. BER results are provided as a function of E_b/N₀ and C/I, where the interferer is a second π/4-shifted-DQPSK signal. Additional results are provided which show the BER sensitivity to Doppler frequency shifts, time delay spread, and carrier frequency offsets     

Yttrium oxide/silicon dioxide: a new dielectric structure forVLSI/ULSI circuits

Electrical characteristics of Al/yttrium oxide (~260 Å)/silicon dioxide (~40 Å)/Si and Al/yttrium oxide (~260 Å)/Si structures are described. The Al/Y₂O₃/SiO₂/Si (MYOS) and Al/Y₂ O₃/Si (MYS) capacitors show very well-behaved I-V characteristics with leakage current density <10^-10 A/cm² at 5 V. High-frequency C- V and quasistatic C-V characteristics show very little hysteresis for bias ramp rate ranging from 10 to 100 mV/s. The average interface charge density (Q_f+Q _it) is ~6×10¹¹/cm² and interface state density D_it is ~10¹¹ cm^-2-eV^-1 near the middle of the bandgap of silicon. The accumulation capacitance of this dielectric does not show an appreciable frequency dependence for frequencies varying from 10 kHz to 10 MHz. These electrical characteristics and dielectric constant of ~17-20 for yttrium oxide on SiO₂/Si make it a variable dielectric for DRAM storage capacitors and for decoupling capacitors for on-chip and off-chip applications     

Real-time implementation of a narrow-band Kalman filter with afloating-point processor DSP32

The author presents experimental results from two studies. First, a real-time narrowband Kalman filter is implemented with a floating-point digital processor DSP32. The real-time capability of this narrowband filter is investigated by varying parameters Q and R. The covariance matrices Q and R of the dynamic and measurement noise sequences are found to exhibit duality in the real-time tuning process and have a direct effect on system stability. If the value of Q used is smaller (with fixed R ), the tracking time and the narrower tracking bandwidth of the filter will be longer. In addition, if the value of R used (with fixed Q) is smaller, the tracking time will be smaller, and the tracking bandwidth of the filter will be larger. The results are tabulated. Second, two optimal codes (in the sense of the execution speed), straight-line code and general matrix-based code, have been developed for implementing the narrowband Kalman filter. These two codes are compared in terms of program memory size, data memory size, and speed of execution. With the matrix-based code, the DSP32 performance is evaluated in terms of speed and memory size by varying the number of states of a Kalman filter. The results are also tabulated     

Measurements and modeling of the n-channel MOSFET inversion layermobility and device characteristics in the temperature range 60-300 K

Discussed is the use of the high-frequency split C-V method to measure accurately the effective mobility of the n-channel MOS transistor as a function of temperature, bulk charge Q _b, and inversion layer charge Q_i. The experimental data for Q_b and Q_i were verified by comparison with the results of numerical simulation. The results of the measurements were used to develop the mobility model, which is accurate in the 60-300 K temperature range. The proposed mobility model incorporates Coulombic, lattice, and surface roughness scattering modes and generalizes the previous model, which was limited to low-temperature operation of the MOSFET. The deviation from the universal (for different back biases) μ(E_eff) dependence, which becomes more pronounced at low temperatures and low E_eff, is included in the model and can be associated with the Coulomb scattering mechanism. The proposed model is verified by comparison of experimental data and simulated MOSFET I-V characteristics for different temperatures     

A VLSI architecture for a high-speed all-digital quadraturemodulator and demodulator for digital radio applications

An all-digital architecture is presented for implementing the front-end signal-processing functions in a quadrature modulator and demodulator for high bit-rate digital radio applications. A pair of CMOS chips has been designed and submitted for fabrication in a 1.25-μm process and is expected to accommodate symbol rates up to 35 MBd. The modulator chip accepts a pair of 8-b in-phase and quadrature data streams and generates a bandlimited IF output with an excess bandwidth factor of 35%. The demodulator chip accepts a digitized IF input signal and generates a pair of filtered in-phase and quadrature baseband signals. The modulator and demodulator chips each incorporate 40-tap multiplierless FIR (finite-impulse response) square-root Nyquist matched filters, and the cascade of the two chips achieves a peak intersymbol interference distortion of -54 dB. The modulator chip can generate any arbitrary signal constellation within a rectangular grid of 256×256 points. Thus, the all-digital implementation results in a generic chip set suitable for a wide variety of high bit-rate digital modem designs using formats such as M-ary PSK and QAM     

Light-to-input nonlinearities in an R-LED series network

The light-to-current (L-I) and light-to-voltage (L-V) differential nonlinearities in the simple network of a customary LED and an external resistor R in series are analyzed and calculated theoretically and compared with experimental data. Particular emphasis is placed on the influence of the log-arithmetic slope ν of the L-I characteristic and the bias current I upon the ratio of the corresponding nonlinearity parameters. It is thus deduced that, for a given optical power P, over superlinear portions of the L-I curve (ν>1) the L-I linearity is typically better than its corresponding L-V linearity. On the contrary, when the L-I dependence is sublinear (ν<1) the voltage driving scheme may ensure for the R-LED network, or the LED alone, a local L-V response much more linear than the L-I response, provided that appropriate (optimum) I and/or R values are chosen     

An analytical model for I-V and small-signalcharacteristics of planar-doped HEMTs

An analytical current-voltage (I-V) model for planar-doped HEMTs is developed. This compact model covers the complete range of I-V characteristics, including the current saturation region and parasitic conduction in the electron-supplying layer. Analytical expressions for the small-signal parameters and current-gain cutoff frequency are derived from the I-V model. Modeling results for a 0.1-μm-gate planar-doped AlInAs-GaInAs HEMT show excellent agreement with measured characteristics. Threshold voltages and parasitic conduction in planar-doped and uniformly doped HEMTs are also compared and discussed     

Bounds and constructions of disjoint sets of distinct differencesets

An (I,J)-DDD is a set of I disjoint sets of distinct difference sets each having J elements. A number of constructions are given. Upper and lower bounds on the maximal element in a DDD (disjoint distinct difference) set are given. It is shown that regular DDD sets exist for I≳4J     

Modeling hot-carrier effects in polysilicon emitter bipolartransistors

In self-aligned polysilicon emitter transistors a large electric field existing at the periphery of the emitter-base junction under reverse bias can create hot-carrier-induced degradation. The degradation of polysilicon emitter transistor gain under DC stress conditions can be modelled by ΔI_B∝I_R ^m+ntⁿ where n≈0.5 and m ≈0.5. The more complex relationships of Δβ(I _C, I_R, t) and β(I _C, I_R, t) result naturally from the simple ΔI_B model. Using these relationships the device lifetime can be extrapolated over a wide range of reverse stress currents for a given technology     

Distributed cochannel interference control in cellular radiosystems

Distributed power control algorithms that use only the carrier-to-interference ratios (C/I ratios) in those links actually in use are investigated. An algorithm that successfully approximates the behavior of the best known algorithms is proposed. The algorithm involves a novel distributed C/I-balancing scheme. Numerical results show that capacity gains on the order of 3-4 times can be reached also with these distributed schemes. Further, the effects of imperfect C/I estimates due to noise vehicle mobility, and fast multipath fading are considered. Results show that the balancing procedure is very robust to measurement noise, in particular if C/I requirements are low or moderate. However, for required high C/I levels or for a rapidly changing path loss matrix, convergence may be too slow to achieve substantial capacity improvements     

Nonredundant error correction analysis and evaluation ofdifferentially detected π/4-shift DQPSK systems in a combined CCI andAWGN environment

The application of the nonredundant error correction (NEC) technique to the North American and Japanese digital cellular modulation standard, π/4-shift differential quadrature phase shift keying (DQPSK), in a combined additive white Gaussian noise (AWGN) and cochannel interference (CCI) environment is proposed, analyzed, and theoretically evaluated. The performance for NEC receivers with single, double, and triple error correction capability is theoretically analyzed and evaluated. For the CCI, the general model, which includes M statistical independent interferers also employing the π/4-shift DQPSK modulation format, is adopted. The theoretical symbol error probability versus carrier-to-noise ratio have been obtained with M and the carrier-to-interference ratio (C/I) as parameters. The results indicate significant performance improvements over conventional differentially detected systems. Some of the results have been verified by computer simulation. The gains offered by the NEC receivers increase as C/I decreases and/or M increases. Significant error floor reductions have been observed     

Distributed feedback laser diode and module for CATV systems

Harmonic distortion of distributed feedback laser diodes (DFB-LDs) for analog transmission systems is investigated. It is shown that, under a modulation frequency of less than 1 GHz, the harmonic distortion depends on the nonlinearity of the light output power-current (P-I) curve under the continuous wave (CW) condition, which is determined by the coupling constant κ L, and that the distortion can be minimized at κ L~1. A 1.3 μm wavelength InGaAsP DFB-PPIBH (p-substrate partially inverted buried heterostructure) LD and its module, with low distortion by the control of a coupling constant, have been developed     

Analyses of mode partition and mode hopping in semiconductor lasers

Mode power fluctuations in semiconductors laser due to mode partition and mode hopping are discussed. The power dropout probability P_e in the mode partition was measured for a wide range, 1.6×10^-6⩽P_e⩽1, which decreased by increasing I/I_th (I and I_th are the DC injection current and its threshold value respectively). The duration time t_d of the power dropout expressed at t_d=3.7×10 ⁴⁸ exp[-118 (I/I_th)] for 1.065⩽I/I_th⩽1.104. Power fluctuations exhibited specific characteristics around the threshold, which were similar to the critical slowing down in the phase transition phenomenon. An increase in the variance of the power fluctuations was observed when the laser oscillating condition was converted from mode partition to mode hopping. The unified stochastic model based on the Fokker-Planck approach described well both mode partition and mode hopping     

Optimal codes for minimax criterion on error detection

Nonlinear quadratic codes that are optimal for the minimax error detection are presented. Characteristic functions for these codes are asymptotically bent. For a given block size n and the number of codewords |C|, these codes minimize max Q(e), e≠0, where Q(e) is the conditional error-masking probability, given the error pattern e. The codewords are blocks of n symbols from GF(q). Encoding and decoding procedures for the codes are described     

Fundamentals of oscillator performance

The oscillator is arguably the most essential part of any communication system: it defines a channel frequency, or timing and synchronisation in a digital system. The phase noise of any oscillator has a fundamental lower limit. It limits the achievable efficiency of spectrum use and degrades the error rate in practical applications. Any low-noise oscillator can be described as a positive-feedback Q-multiplier circuit. Such a model shows that phase noise is minimised if the square of the effective circuit Q and the signal-to-noise ratio in the oscillator are maximised. This simple fact is true for all oscillators and it provides the basis for more efficient and lower noise designs