LCDV法沉积Si3N4薄膜微透镜的研究

介绍了一种利用激光化学气相沉积技术，在平面石英玻璃衬底上沉积平凸形Ｓｉ３Ｎ４球面介质膜用作微透镜，包括ＬＣＶＤ的实验装置及其沉积工艺，实验结果表明，只要适当控制源气体的化学配比与浓度，调节激光功率与衬底上的聚集激光光斑尺寸，选择适当的沉积时间，就可以获得不同直径、透明、表面光滑的Ｓｉ３Ｎ４球面介质膜，用作微透镜。     

激光辅助化学气相沉积研究进展

激光化学气相沉积技术(LCVD)相较于传统化学气相沉积技术具有低沉积温度、高膜层纯度、高沉积效率等特点,在各类功能薄膜材料制备上有着巨大的应用前景.围绕激光化学气相沉积技术,本文详细阐述了激光热解离、激光光解离与激光共振激发解离作用机制,同时介绍了各类LCVD的常用设备,着重总结了LCVD在金属材料、碳基材料、氧化物材...     

蓝宝石和硅衬底上氮化硅薄膜的制备和性能研究

采用射频磁控反应溅射法,以高纯Si为靶材,高纯N2气为反应气体,在蓝宝石和硅衬底上制备了氮化硅薄膜.并对Si3N4薄膜的沉积速率、成分、结构及红外光学性能等进行了研究.实验结果表明,沉积薄膜中Si和N的比接近3∶4,形成了Si3N4化合物,呈非晶态结构.制备的Si3N4薄膜的硬度明显高于蓝宝石衬底的硬度,且与蓝宝石衬底结合牢固,可提供良好的保护性能.     

Si_3N_4球表面DLC膜在干摩擦条件下的摩擦学性能分析

采用非平衡磁控溅射技术在Si3N4球及高速钢基体上制备了类金刚石(DLC)膜。采用UMT-II型球盘式摩擦磨损试验机分别考察了Si3N4球、镀DLC膜Si3N4球及GCr15球的摩擦学性能,并分析了不同滑动速度和载荷下Si3N4球表面DLC膜的摩擦学性能。研究结果表明:Si3N4球的摩擦系数及磨损率约为GCr15球的一半,但因Si3N4球脆性较大,在摩擦过程中摩擦接触表面容易剥落;Si3N4球表面镀DLC膜能有效地改善Si3N4球脆性大的弱点,并具有良好的减摩作用;Si3N4球表面DLC膜所组成摩擦副的平均摩擦系数随着载荷的增加而增大;随着速度的增加摩擦副的摩擦系数先增大而后减小,滑动速度对摩擦副摩擦系数的影响比载荷明显。实验结果表明Si3N4球表面镀DLC膜适合于高速轻载的工况。     

负偏压增强金刚石膜与衬底结合强度的理论研究

由于金刚石与Si有较大的晶格失配度和表面能差,利用化学气相沉积(CVD)制备金刚石膜时,金刚石在镜面光滑的Si表面上成核率非常低.而负衬底偏压能够提高金刚石在镜面光滑的Si表面上的成核率,表明金刚石核与Si表面的结合力也得到增强.利用负偏压增强CVD系统制备金刚石膜时,气体辉光放电产生的离子对Si表面轰击,使得Si衬底表面产生了微缺陷(凹坑),增大了金刚石膜与Si衬底的结合面积.本工作主要从理论上研究离子轰击对金刚石膜与Si衬底结合力的影响.     

A1N薄膜的KrF准分子脉冲激光沉积

研究了采用脉冲激光沉积（PLD）技术在Si（100）衬底上A1N薄膜的制备及其性质。结果表明，衬底温度从室温到800℃的范围内，所得到的A1N薄膜为（002）择优取向的纤锌矿结构。随着衬底温度的升高，A1N薄膜从纳米晶结构转为多晶结构，同时表面微粗糙度上升。A1N晶粒呈柱状生长机制。     

纳米金刚石膜场发射性质的研究

研究了不同衬底上纳米金刚石膜场电子发射性质.纳米金刚石膜是用热灯丝化学气相沉积法合成的.反应气体是CH4、H2和N2的混合物.得到的纳米金刚石膜利用扫描电子显微镜和拉曼谱等进行检测和表征.场发射是在压强为106Pa的真空室进行测量的.实验结果表明,在纳米金刚石膜上涂有碳纳米管展显了更低的开启电场,它比碳纳米管,Mo上纳米金刚石及Si上纳米金刚均要低得多.但Mo和Si上纳米金刚石要比Si上多晶金刚石开启电场低.文中对实验结果进行了讨论.     

AlN-Si_3N_4膜

用直流反应溅射沉积AlN－Si3N4膜。通过红外吸收光谱和X射线衍射来验证薄膜的结构。通过各种测量，给出了吸收系数、电阻率、应力、硬度和结合力。实验表明，AlN－Si3N4膜具有良好的光、电和机械特性。     

激光低温沉积金刚石膜

用ＸｅＣｌ紫外与ＣＯ２红外复合激光化学气相沉积方法，在３４０℃硅衬底上沉积成高纯金刚石膜。     

沉积位置对脉冲激光沉积纳米Si晶薄膜微观结构的影响

在4.0×10-4Pa的真空条件下,采用脉冲激光烧蚀技术在单晶Si衬底和石英衬底上制备了非晶纳米Si薄膜.在N2气氛下,经过900℃热退火得到纳米Si晶薄膜.采用表面台阶测试仪、扫描电子显微镜、拉曼光谱仪等检测手段对样品不同位置的微观结构进行了表征.测量结果表明制备的纳米Si晶薄膜厚度及其晶粒尺寸分布不均匀,随着测量点与样品沉积中心距离的增加,薄膜的厚度逐渐减小,纳米Si晶粒的尺寸逐渐增大.从脉冲激光烧蚀动力学的角度对实验结果进行了定性的分析.     

Si3N4薄膜的成分与结构研究

通过PECVD方法,在Si基体表面制备了Si3N4薄膜,给出了XRD、TEM、AES、DPS的分析结果,表明Si3N4是非晶态结构,薄膜的主要成分是Si3N4,SEM分析结果显示Si3N4薄膜与基体材料的结合强度高,薄膜致密性好.     

离子束增强沉积Si3N4／Si多层红外干涉滤波薄膜

利用离子束增强沉积工艺，在硅基片上制备Ｓｉ３Ｎ４／Ｓｉ多层红外干涉滤波薄膜。结构表明，Ｎ＾＋２＋Ｎ＋的辅助轰击对于合成接近化学配比的Ｓｉ３Ｎ４薄膜起了关键作用。薄膜的折射率可达１．７４－１．８４。实验测得的多层滤波薄膜的红外反射谱与值相当接近。     

气体流量比对反应溅射Si3N4薄膜的影响

利用射频磁控反应溅射法，以高纯Si为靶材，高纯N2气为反应气体，在Si衬底上制备出了Si3N4薄膜，研究了气体流量比对薄膜质量的影响。结果表明，薄膜的沉积速率主要与气体的流量比有关，随着气体流量比的增加，沉积速率下降，靶面的溅射由金属模式过渡到氮化物模式；薄膜中N／Si的原子比增加；红外吸收谱的Si—N键的振动峰向标准峰逼近。     

Influence of substrates on the formation of the TiSi nanowire by atmosphere pressure chemical vapor deposition

TiSi nanowires were deposited on both Si(111) and glass substrates by using SiH4, TiCl4 and N2 as the Si, Ti precursors and diluted gas respectively through atmosphere pressure chemical vapor deposition (APCVD) method. Effects of the substrates on formation of the nanowires were investigated. The results show that the nanowires can be formed on both Si(111) and glass substrates at ratio of SiH4/TiCl4 of 4. However, the quantities of the TiSi nanowires that formed with glass substrate are less than that with Si(111) substrate. The nanowires formed with glass substrate has length of 2-3 microm and diameters of 15-25 nm while that is 4-5 microm and 25-35 nm respectively with Si(111) substrate. Great quantities of the titanium silicide nanowires with relative higher contents of the C54 TiSi2 crystalline phase underneath can be obtained through improving the deposition conditions.     

化学气相淀积制备Si3N4超细粉末

本文研究了ＳｉＣｌ４－ＮＨ３－Ｎ２－Ｈ２系统平衡热力学，确定了Ｓｉ３Ｎ４合成的最佳热力学条件。采用电阻炉化学气相淀积法制备了Ｓｉ３Ｎ４超细粉末，并考察了工艺条件对颗粒形貌的影响。     

Lead zirconate titanate thin films on GaAs substrates

Thin films of the piezoceramic lead zirconate titanate (PZT) of composition Pb(Zr0.53Ti0.47)O3 have been prepared on a platinized GaAs substrate system using a propanediol based sol-gel technique. A Si3N4 buffer layer was deposited onto the GaAs by plasma-enhanced chemical vapour deposition so as to minimize Ga and As diffusion during film fabrication. Rapid thermal processing (RTP) techniques were used to thermally decompose the sol-gel layer to PZT in a further effort to avoid problems of Ga and As diffusion. Adhesion between the electrode and substrate was found to improve when an intermediate Ti layer deposited between the Pt and Si3N4 was oxidized prior to depositing the Pt layer. A crystalline PZT film was produced on the Pt/TiO2/Si3N4/GaAs by firing the sol-gel coating at 350°C for 1 min and then at 650°C for 10 s using RTP. A single deposition of precursor sol resulted in a film 0.5 μm thick. Measured average values of remanant polarization and coercive field were 14 μC cm-2 and 47 kV cm-1, respectively. The polarization value is rather low, as conventionally fired films on silicon have remanent polarization values of 20–30 μC cm-2; the lower values may be due to incomplete crystallization during RTP, but a degradation of properties due to Ga-As diffusion, despite the precautions, cannot be ruled out at this stage. This revised version was published online in November 2006 with corrections to the Cover Date.     

Interracial Bonding Strength of TiN Film Coated on Si3N4 Ceramic Substrate

The fraction of TiN/Si3N4 in the cross section was observed with scanning electric microscope （SEM）, and residual stresses of TiN coated on the surface of Si3N4 ceramic were measured with X-ray diffraction （XRD）.The hardness of TiN film was measured, and bonding strength of TiN film coated on Si3N4 substrate was measured by scratching method. The formed mechanism of residual stress and the failure mechanism of the bonding interface in the film were analyzed, and the adhesion mechanism of TiN film was investigated preliminarily. The results show that residual stresses of TiN film are all behaved as compressive stress, and TiN film is represented smoothly with brittle fracture, which is closely bonded with Si3N4 substrate. TiN film has high hardness and bonding strength of about 500 MPa, which could satisfy usage requests of the surface of cutting Si3N4 ceramic.     

Interfacial Bonding Strength of TiN Film Coated on Si3N4 Ceramic Substrate

The fraction of TiN/Si3N4 in the cross section was observed with scanning electric microscope (SEM), and residual stresses of TiN coated on the surface of Si3N4 ceramic were measured with X-ray diffraction (XRD).The hardness of TiN film was measured, and bonding strength of TiN film coated on Si3N4 substrate was measured by scratching method. The formed mechanism of residual stress and the failure mechanism of the bonding interface in the film were analyzed, and the adhesion mechanism of TiN film was investigated preliminarily. The results show that residual stresses of TiN film are all behaved as compressive stress, and TiN film is represented smoothly with brittle fracture, which is closely bonded with Si3N4 substrate. TiN film has high hardness and bonding strength of about 500 MPa, which could satisfy usage requests of the surface of cutting Si3N4 ceramic.     

熔盐热析出反应金属化Si3N4与Si3N4的连接

在采用熔盐热析出反应在Ｓｉ３Ｎ４陶瓷表面沉积钛金属膜的基础上,对ＣｕＡｇ合金在金属化表面的润湿性进行了研究,结果表明,ＣｕＡｇ合金能对采用该方法金属化的Ｓｉ３Ｎ４陶瓷实现良好润湿,在此基础上,成功实现了钛金属化Ｓｉ３Ｎ４陶瓷与Ｓｉ３Ｎ４陶瓷的连接并对连接工艺进行了系统研究。连接界面的ＴＥＭ研究发现,界面上广泛存在Ｔｉ－Ｃｕ－Ｓｉ－Ｎ相并对这种相对连接强度的影响进行了讨论。     

硅基体表面无钯活化化学镀镍工艺

硅材化学镀镍的活化是为了获取金属原子沉积中心,但现有的活化工艺存在种种不足。金纳米粒子具有小尺寸效应、表面与界面效应,呈现出良好的催化活性。采用金纳米粒子对硅基体进行活化后化学镀镍,并采用浸泡腐蚀试验,SEM及EDS测试将其与传统的钯活化法对比,研究了活化后的沉积速度及镀层形貌、结构、耐腐蚀性能,结果表明：金纳米粒子活...