一种高性能环形可调谐光纤光栅激光器研究

研制了一种新型的高性能环形可调谐光纤光栅激光器。该激光器使用980nm LD作为泵浦源,使用长度为10. 8m的新型增益平坦掺铒光纤作为增益介质,采用可调谐光纤光栅滤波器进行波长调谐,调谐范围可达41nm (1528nm～1569nm) ,中心波长可精确调谐到C波段指定的ITU - T标准中心波长处, 3dB 带宽< 0. 08nm, 25dB带宽< 0. 2nm,波长稳定性优于0. 01nm,边模抑制比> 60dB。最大输出功率46. 94mW,功率稳定性优于±0. 02dB,阈值泵浦功率7. 3mW,斜率效率为39. 75%。并分析了不同腔长、不同输出耦合比对输出功率的影响。     

基于F-P干涉技术的通信波段可调谐激光器

根据F-P干涉原理设计制作了楔型F-P滤波器,使用这种滤波器进行可调谐掺铒光纤激光器实验,980nmLD泵浦功率为25mW时获得了稳定的单纵模激光输出,输出功率约0．6mW,线宽低于0．06nm,在34．2nm波长调谐范围内功率变化不超过0．5dB,边模抑制比大于35dB。     

基于角度调谐F-P干涉仪的C波段可调谐激光器的研究

研究了基于法布里一珀罗(F-P)干涉原理的角度调谐的滤波器特性,使用自制的滤波器进行可调谐掺Er^3 光纤激光器实验。当980nm泵浦功率为30mW时获得了稳定的单纵模激光输出,输出功率约。0.65mW,线宽低于0.1m,在35．76nm波长调谐范围内功率变化不超过1dB,边模抑制比(SMSR)大于35dB;泵浦功率为46mW时获得了最大的输出功率,约为1mW。     

可编程控制波长调谐的环形掺铒光纤激光器

提出了一种新型的可调谐光纤激光器,器件采用介质薄膜干涉滤波器进行波长可编程调谐,调谐范围超过38 nm(1 526.5～1 564.6 nm),中心波长可精确调谐到C波段指定的ITU-T波长栅格的标准中心波长处,3 dB带宽小于0.08 nm,25 dB带宽小于0.22 nm,波长稳定性优于0.01 nm,边模抑制比大于60 dB,最大输出光功率35.6 mW,功率稳定性优于±0.02 dB,阈值泵浦功率和斜率效率分别为5.8 mW和36.6%.     

一种高稳定DBR 型掺铒光纤激光器研究

研制了一种高功率高边模抑制比及高波长稳定性的DBR 型掺铒光纤激光器。该激光 器使用980nm LD 作为泵浦源,并使用长度为2. 75m 的高掺杂浓度的掺饵光纤作为增益介质,在1. 55μm 波段获得了3dB 线宽为0. 2nm ,25dB 线宽为0. 4nm 的激光输出。最大输出光功率25mW ,输出功率稳定性±0. 01dB ,边模抑制比60dB ,波长稳定性0. 01dB (受光功率计精度的限制) ,阈值泵浦光功率8. 6mW ,斜率效率21. 7 %。     

掺Yb3+光纤环形激光器特性研究

本文利用国产半导体激光器泵浦掺Yb3+光纤环形激光器获得成功．掺Yb3+光纤长3 m,与1053 nm／980 nm波分复用器(WDM)构成交叉耦合型全光纤环形腔．总腔长为4 m,泵浦波长980 nm,激光波长为1042．3 nm,斜率效率9．6％,激光阈值低于0．5 mW,利用可调谐钛宝石激光器泵浦,得到该光纤激光器的最佳泵浦波长为978 nm．     

基于Mach-Zehnder滤波的可调谐光纤激光器

() ()基金项目: 。摘要:为了实现高稳定性的可调谐激光输出,提出并设计了一种基于Mach-Zehnder(M-Z)滤波结构,结合Fabry-Perot(F-P)滤波器的可调谐掺铒光纤激光器,并对激光器的原理及实现方案进行理论分析和实验验证。所设计激光器系统的泵浦源工作波长为976 nm;长度5 m的掺铒光纤作为增益介质;采用全光纤M-Z结构进行滤波,并结合F-P滤波器实现单波长激光可调谐输出。实验中,通过调节F-P滤波器,在泵浦功率为60 mW时,实现了1547～1568 nm范围内单波长激光的稳定可调谐输出,波长调谐间隔小于1.7 nm,每个输出波长的边模抑制比均大于55 dB,线宽均小于0.1 nm。     

基于光纤Bragg光栅的掺铒光纤激光器

研制了基于光纤Bragg光栅的掺铒单模光纤激光器。用 980nmLD作抽运源 ,在 1 56 μm波段获得了谱线宽为 0 1nm的激光输出。最大输出光功率为 1 73mW。输出功率稳定性为± 0 .0 2dB ,波长稳定性为 0 0 5dB。阈值抽运光功率为 7mW ,斜率效率为 3%。     

一种实用化的高功率低噪声波长连续可调光纤激光器

报道了一种基于光纤光栅 (FBG)的高功率可调谐环形腔掺铒光纤激光器。该激光器由 980nm激光二极管(LD)抽运 ,在 15 6 2nm波段获得了线宽小于 0 0 4nm的激光输出 ,调谐范围可达 4 6nm ,输出波长复现性误差小于 0 0 8nm。由于铒光纤选择了最佳长度 ,并在光纤环路中引入两个隔离器抑制噪声 ,提高了信噪比 ,激光器输出的最大功率可达 4 2 8mW ,此时功率稳定性为± 0 0 3dB ,斜率效率为 7 3%。     

波长可调谐掺铒光纤激光器的特性研究

利用我们已经研制成功的不依赖于偏振的声光可调谐滤波器(AOTF)作为调谐元件,提出一种新型的线性腔的波长可调谐掺铒光纤激光器.这种激光器的结构简单,调谐范围可达60nm,而且调谐速度快,调谐非常方便. 从三能级速率方程出发,结合线性腔的激光器理论及调谐器件AOTF的滤波原理,从理论上对这种激光器的输出特性进行了分析,得到输出功率、抽运阈值功率和斜率效率随波长变化的解析式.计算了满足位相匹配条件的中心波长分别为1533 nm,1553 nm及1570 nm时激光器输出功率随波长的变化.当抽运功率为40 mW时,输出功率约为6.7 mW,抽运阈值功率为4.3 mW,3 dB线宽约0.7 nm,而且不同中心波长的激光输出稳定.通过调节抽运功率、降低损耗以及改善滤波器性能等方式,可以将3 dB线宽减少至0.4 nm.(OD5)     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.