Effect of different processing methods for the hole transporting layer on the performance of double layer organic light-emitting devices

The hole transporting layer （HTL） of organic light-emitting device （OLED） was processed by vacuum deposition and spin coating method, respectively, where N,N＇-biphenyl-N, N＇-bis（3-methylphenyl）- 1, l＇-biphenyl-4,4＇ -diamine （TPD） and poly （vinylcarbazole） （PVK） acted as the hole-transport materials. Tris-（8-hydroxyquinoline）- aluminum （Alq3） was utilized as both the light-emitting layer and the electron transporting layer. The basic structure of the device cell was： indium-tin-oxide （1TO）/PVK ： TPD/Alq3/Mg：Ag. The electroluminescent （EL） characteristics of devices were characterized. The results showed that the peak of EL spectra was located at 530 nm, which conformed to the characterizing spectrum of Alq3. Compared with using vacuum deposition method, the green emission with a maximum luminance up to 26135 cd/m2 could be achieved at a drive voltage of 15 V by selecting proper solvent using spin-coating technique, and its maximum lumi nance efficiency was 2.56 lm/W at a drive voltage of 5.5 V.     

Ni(Pt) 锗硅化合物/Si1-xGex 接触电阻的测试

The electrical properties of Ni0.95Pt0.05-germanosilicide/Si1_xGex contacts on heavily doped p-type strained Sil-xGex layers as a function of composition and doping concentration for a given composition have been investigated. A four-terminal Kelvin-resistor structure has been fabricated by using the conventional com- plementary metal-oxide-semiconductor （CMOS） process to measure contact resistance. The results showed that the contact resistance of the Ni0.95Pt0.05-germanosilicide/Sil-xGex contacts slightly reduced with increasing the Ge fraction. The higher the doping concentration, the lower the contact resistivity. The contact resistance of the samples with doping concentration of 4×10^19 cm^-3 is nearly one order of magnitude lower than that of the sam- ples with doping concentration of 5 × 10^17 cm^-3. In addition, the influence of dopant segregation on the contact resistance for the lower doped samples is larger than that for the higher doped samples.     

High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures

The effect of changing Be doping concentration in GaAs layer on the integrated photosensitivity for negative-electron-affinity GaAs photocathodes is investigated.Two GaAs samples with the monolayer structure and the multilayer structure are grown by molecular beam epitaxy.The former has a constant Be concentration of 1e19cm-3,while the latter includes four layers with Be doping concentrations of 1e19,7e18,4e18,and 1e18cm-3 from the bottom to the surface.Negative-electron-affinity GaAs photocathodes are fabricated by exciting the sample surfaces with alternating input of Cs and O in the high vacuum system.The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathode with the multilayer structure enhanced by at least 50% as compared to that of the monolayer structure.This attributes to the improvement in the crystal quality and the increase in the surface escape probability.Different stress situations are observed on GaAs samples with monolayer structure and multilayer structure,respectively.     

Noncontact 3D measurement method on hole-structure precision inspection

In order to implement 3D point cloud scanning of small hole structure, which could not be contacted or damaged, we propose a noncontact 3D measuring method. The system contains a laser triangulation displacement sensor, a Michelson interferometer system and a coordinate measuring machine, with the advantages of non-invasive scanning, fast measurement speed and high precision. Focusing on reconstructing 3D point cloud data, random sample consensus is used to separate surface data and hole data respectively from the raw dataset. Least square optimization determines the function of the cylinder, as well as hole diameter and inclined angle between the hole and the surface. In the experiment scanning a round hole, the estimated result has diameter error and angle error within 30 μm and 0.2°, respectively. Results manifest the effectiveness and feasibility of this system and express practicality in manufacturing industry.     

Forward gated-diode method for parameter extraction of MOSFETs

The forward gated-diode method is used to extract the dielectric oxide thickness and body doping concentration of MOSFETs,especially when both of the variables are unknown previously.First,the dielectric oxide thickness and the body doping concentration as a function of forward gated-diode peak recombination-generation (R-G) current are derived from the device physics.Then the peak R-G current characteristics of the MOSFETs with different dielectric oxide thicknesses and body doping concentrations are simulated with ISE-Dessis for parameter extraction.The results from the simulation data demonstrate excellent agreement with those extracted from the forward gated-diode method.     

Effects of the p-AlInGaN/GaN superlattices’structure on the performance of blue LEDs

The advantages of the p-AIInGaN/GaN superlattices＇ （SLs） structure as an electron blocking layer （EBL） for InGaN blue light-emitting diodes （LEDs） were studied by experiment and APSYS simulation. Elec- troluminescence （EL） measurement results show that the LEDs with the p-AllnGaN/GaN SLs＇ structure EBL ex- hibited better optical performance compared with the conventional A1GaN EBL due to the enhancement of hole concentration and hole carrier transport efficiency, and the confinement of electrons＇ overflow between multiple quantum-wells （MQWs） and EBL.     

Progress in efficient doping of Al-rich AlGaN

The development of semiconductors is always accompanied by the progress in controllable doping techniques. Taking AlGaN-based ultraviolet(UV) emitters as an example, despite a peak wall-plug efficiency of 15.3% at the wavelength of275 nm, there is still a huge gap in comparison with Ga N-based visible light-emitting diodes(LEDs), mainly attributed to the inefficient doping of AlGaN with increase of the Al composition. First, p-doping of Al-rich AlGaN is a long-standing challenge and the low hole...     

Photoluminescence Characterization of Boron-doped Si Layers Grown by Molecular Beam Epitaxy

Photoluminescence spectra were used to characterize the boron-doped Si layers grown by molecular beam epitaxy using HBO2 as the doping source. The influence of boron doping concentration on the dislocation-related photoluminescence spectra of molecular beam epitaxy Si layers annealed at 900 ℃ was studied with different doping concentrations and growth temperature. The broad photoluminescence band（from 0.75 eV to 0. 90 eV） including D1 and D2 bands was associated with high boron doping concentration in the samples, while D3 and D4 bands might be related to oxygen precipitates.     

High-quality homoepitaxial layers grown on 4H-SiC at a high growth rate by vertical LPCVD

High quality,homoepitaxial layers of 4H-SiC were grown on off-oriented 4H-SiC（0001） Si planes in a vertical low-pressure hot-wall CVD system（LPCVD） by using trichlorosilane（TCS） as a silicon precursor source together with ethylene（C₂H₄） as a carbon precursor source.The growth rate of 25-30μm/h has been achieved at lower temperatures between 1500 and 1530℃.The surface roughness and crystalline quality of 50μm thick epitaxial layers（grown for 2 h） did not deteriorate compared with the corresponding results of thinner layers（grown for 30 min）.The background doping concentration was reduced to 2.13×10¹⁵ cm^-3.The effect of the C/Si ratio in the gas phase on growth rate and quality of the epi-layers was investigated.     

共蒸发方法制备GaSb多晶薄膜

We report optical and electrical properties of polycrystalline GaSb thin films which were successfully grown by co-evaporation on soda-lime glass substrates. The thin films have preferential orientation of the （111） direction. SEM results indicate that the average grain size of GaSb thin film is 500 nm with the substrate temperature of 560 ℃. The average reflectance of GaSb thin film is about 30% and the absorption coefficient is of the order of 10^4 cm^-1. The optical bandgap of GaSb thin film is 0.726 eV. The hole concentration shows a clear increasing trend as the Ga-evaporation-temperature/Sb-evaporation-temperature （TGa/Tsb） ratio increases. When the Ga crucible temperature is 810 ℃ and the antinomy crucible temperature is 415 ℃, the hole concentration of polycrystalline GaSb is 2 × 10^17 cm^-3 and the hole mobility is 130 cm^2/（V·s）. These results suggest that polycrystalline GaSb thin film is a good candidate for the use as a cheap material in TPV cells.     

PVK:NPB复合空穴传输层对有机电致发光器件的影响

采用poly(N-vinylearbazole)(PVK):N,N'-bis-(1-naphthyl)-N,N'-bipheny-1,1'-biphenyl-4,4'-diamine(NPB)掺杂体系作为复合空穴传输层,通过调节该体系的组分,制备了结构为indium-tin oxide(ITO)/PVK:NPB/8-hydroxyquinoline aluminum(Alq3)/Mg:Ag的双层有机电致发光器件(OLED),研究了具有不同掺杂质量比的OLED器件的电致发光特性,并对掺杂薄膜的表面形貌进行了表征.结果表明,将NPB掺杂到PVK中会提高空穴传输能力,改善器件的发光亮度和效率,并调节载流子复合区域的位置,光谱谱峰从509 nm移动到530 mm;但随着NPB质量比例提高,掺杂薄膜表面的平均粗糙度由3 nm上升为10 mm,电流密度和亮度先升高后降低.当PVK和NPB的掺杂质量比为l:3时,器件具有最优性能,发光亮度达到7852 cd/m2,功率效率为1.75 lm/W.     

Organic electroluminescent characteristics of PS:NPB composite hole transporting layer

Green organic light-emitting devices with a structure of indium-tin-oxide (ITO)/polystyrene (PS):N, N' -bis-(3-naphthyl)-N, N' -biphenyl-( 1,1' -biphenyl)-4,4' -diamine (NPB)/tris-(8-hydroxyquinoline)-aluminum (Alq3)/Mg:Ag were fabricated. A doping system consisting of small-molecular hole transporting material NPB and polymeric matrix PS was applied as a composite hole transporting layer (HTL), and the thin film preparation was simplified via spin-coating technique. By adjusting the component ratio of the doping system, several devices with different concentration proportion of PS:NPB are constructed. The electroluminescent characteristics of the devices were investigated and discussed. This study demonstrated that the difference of doping concentration of NPB has a remarkable impact on the optoelectronic performance of both HTL and the devices. Optimum device performance can be obtained by choosing a suitable concentration proportion of PS:NPB at 1:1. This study contributes to the construction of composite functional layers of organic light-emitting diode (OLED) devices and to the technical modification.     

Blue Organic LEDs With Improved Power Efficiency

High-power-efficiency blue fluorescent organic light-emitting devices have been demonstrated by simultaneously doping two hole-conduction layers of 4, 4', 4"-Tris(N-3-methylphenyl-N-phenyl-amino) triphenylamine (m-MTDATA), and N, N^'-diphenyl-N, N'-bis(1-naphthyl)-(1, 1'-biphenyl)-4, 4^' -diamine (NPB) with 2, 3, 5, 6-tetrafluoro-7,7,8,8-tetracyano-quinodimethane (F4-TCNQ) as well as doping two ambipolar emission layers with p-bis(p-N, N-diphenyl-aminostyryl) benzene (DSA-Ph). By doping the two host layers with DSA-Ph to form the double emission layer, the current efficiency is enhanced due to the extended emission zone. We further increase the performance by introducing the doping F4-TCNQ into the hole-injection and transporting layers to reduce the transport barrier at the m-MTDATA:F4TCNQ/NPB and to enhance the hole injection and conduction. The luminance and power efficiencies reach 8.9 cd/A and 4.5 lm/W, respectively.     

Origin of Enhanced Hole Injection in Inverted Organic Devices with Electron Accepting Interlayer

Conventional organic light emitting devices have a bottom buffer interlayer placed underneath the hole transporting layer (HTL) to improve hole injection from the indium tin oxide (ITO) electrode. In this work, a substantial enhancement in hole injection efficiency is demonstrated when an electron accepting interlayer is evaporated on top of the HTL in an inverted device along with a top hole injection anode compared with the conventional device with a bottom hole injection anode. Current–voltage and space‐charge‐limited dark injection (DI‐SCLC) measurements were used to characterize the conventional and inverted N,N′‐diphenyl‐N,N′‐bis(1‐naphthyl)(1,1′biphenyl)‐4,4′diamine (NPB) hole‐only devices with either molybdenum trioxide (MoO₃) or 1,4,5,8,9,11‐hexaazatriphenylene hexacarbonitrile (HAT‐CN) as the interlayer. Both normal and inverted devices with HAT‐CN showed significantly higher injection efficiencies compared to similar devices with MoO₃, with the inverted device with HAT‐CN as the interlayer showing a hole injection efficiency close to 100%. The results from doping NPB with MoO₃ or HAT‐CN confirmed that the injection efficiency enhancements in the inverted devices were due to the enhanced charge transfer at the electron acceptor/NPB interface.     

Thermally stable efficient hole transporting materials based on carbazole and triphenylamine core for red phosphorescent OLEDs

In this work, a series of hole transporting materials with carbazole and triphenylamine cores have been synthesized and characterized. In the carbazole's 3rd and 6th positions, two site tryphenylamine para positions are end capped with the same types of branching derivatives to compare the overall performances of constructed devices. All of our hole transporting materials showed good thermal stabilities without any crystallized features which expressed in higher decomposition temperature (Over 500 °C at 5% weight reduction). All synthesized materials revealed HOMO energy levels between −5.62 and −5.48 eV, which values are lying between HOMO energy values of anode and emission layer; as a result, it made an effective path for hole transportation. Higher lying LUMO values between −2.51 and −2.31 can block the electrons from adjacent layer to ensure the perfect recombination in the middle layer. Triphenylamine based HTMs indicated better performances than carbazole based HTMs. Further comparisons were done by using NPB as hole transporting material with the same red phosphorescent based OLED device. HTM2A based device IV was exhibited higher maximum current efficiency of 30.6 cd/A and higher maximum external quantum efficiency of 26.7% than reference NPB based device. Measured Hole mobility value of HTM2A with hole dominant device was 5.3 × 10⁻⁴ cm² V⁻¹ s⁻¹, which was better than NPB. Synthesized HTM2A would be a promising hole transporting material for various phosphorescent based OLEDs.     

以ZnO为空穴缓冲层的高效率有机电致发光器件

研制了在传统双层有机电致发光器件(OLED) ITO/NPB/AlQ/Al的阳极与空穴传输层间加入ZnO缓冲层的新型器件.研究了加入缓冲层后对OLED性能的影响,并比较了新型与传统OLED的性能,结果表明,新型器件比传统器件的耐压能力有了显著提高;当电压达到7 V时,发光效率提高了35%.分析认为,ZnO缓冲层的加入,改善了界面, 减少了漏电流,并且阻碍了空穴的注入,有利于改善空穴和电子的注入平衡,提高复合效率.     

Phosphorescent organic light emitting diodes with a cross-linkable hole transporting material

A cross-linkable hole transporting material PLEXCORE® HTL was incorporated in phosphorescent organic light emitting diodes. This hole transporting material is based on an arylamine derivate. The device performance in terms of efficiency and lifetime was compared to the same devices with a thermally evaporated 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (NPB)-based hole transporting layer. The resulting devices with the cross-linkable HTL gave higher efficiency, smaller roll-off and longer lifetime compared with devices with the NPB-based devices. This new hole transporting material paves the road toward solution processed multilayer light emitting devices.     

Study of electroplex emission from a blend of two basic blue-emitting materials PVK and NPB

An organic light emitting diode was fabricated with the simple structure of ITO/PEDOT:PSS/PVK:NPB/LiF/Al, which used the blend of two blue-emitting materials poly(N-vinylcarbazole) (PVK) and N,N₀-bis-(1-naphthyl)-N,N₀-diphenyl-1,10-biphenyl-4,40-diamine (NPB) as the emitting layer. In EL spectra of the device, except for the emission of NPB, a new peak at 650 nm was observed too, but was not in PL spectra. So the new emission was proposed to be electroplex that occurred between PVK and NPB molecules. White emission via electroplex formation can be obtained with Commission International d’Eclairage (CIE) coordinates (0.31, 0.3 0) at 28 V. By use of electroplex formed between two blue-emitting materials, a new route to get white organic light-emitting diode (WOLED) may be obtained.     

聚乙烯基咔唑对稀土络合物发光特性的影响

本文报导了稀土红色荧光络合物－Eu(TTA)m复合体系与聚乙烯基咔唑（PVK）共混体系的光致发光和电致发光性质。通过对吸收光谱和发射光谱的测量,可知在光致发光中存在PVK向Eu(TTA).复合体系的能量传递,但在较大的掺杂浓度下仍存在来自PVK的发光.在电场激发条件下,此共混体系的电致发光仅有稀土络合物的特征发光而很难看到PVK的特征发光.并且这种电致发光器件的稳定性明显改善,另外在器件结构中加入电子传输层可明显提高器件的发光效率.