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1.
针对常用多模腔加热的不均匀性,对多馈口微波加热进行了研究,提出了一种基于数值仿真分析来设计微波加热系统的方法。通过建立1/2 全尺寸有限元模型进行仿真计算,分析了馈口数量对微波加热的影响,在此基础上采用Bang-Bang 控制策略设计了加热系统。其中,圆柱形谐振腔模型的高度为800 mm,半径为395 mm。腔体周围环形布置10个微波源,通过德拜模型仿真温度变化和测量值进行对比,验证了仿真模型的正确性。不同馈口数的COMSOL仿真结果表明,馈口数为4时,温度变异系数(COV)为0.0897,相比于一个馈口的情况,温度的均匀性提高了10.5%。通过实验测试了微波加热系统性能,实验结果表明,媒质温度能得到合理控制。  相似文献   

2.
为了解决工业上固体材料在微波加热过程中普遍存在的能量不集中、效率低、加热不均匀的问题,提 出了一种管道式固体材料微波加热装置的设计方案。利用多物理场仿真对固体材料微波加热均匀性影响因素进行 分析,并优化了微波馈入装置的分布和管道结构,仿真表明该装置具有较好的加热均匀性和较高的效率。基于优化 后的设计,计算了褐煤在微波加热时的温度分布情况,其温度场的变异系数COV 值达到0.166,表明温度分布具有 良好的均匀性。该装置实现了对褐煤的微波均匀加热,对固体材料微波加热的工业应用具有指导意义。  相似文献   

3.
针对微波加热过程中存在温度分布不均匀的问题,提出利用多端口加热方式,通过多物理场耦合计算分析了端口布局、位置、数量以及功率配比对微波加热马铃薯块均匀性的影响。仿真计算结果表明,在四端口馈入时,端口分布于腔体四面,四个端口坐标分别为(-55,-162.5,70)、(162.5,-55,70)、(55,162.5,70)和(-162.5,55,70),且四端口馈入功率比为200∶200∶300∶300时,微波加热均匀性效果最佳。  相似文献   

4.
微波对物质的加热涉及电磁、热、加热物的物理参数随温度变化等多种物理过程的综合作用。研究耦合电磁场、热传导和被加热物质物理参数方程构建多物理场方程组,数值求解获得微波加热过程的温度变化。给出多物理场算法公式和计算流程,以2.45 GHz微波加热水为例,多物理场仿真了该加热过程的微波功率分布、热量累积和温度上升,设计和加工制作了微波加热实验装置。在工作频点2.45 GHz处,测试装置的回波损耗为16.2 dB,同时测试了输入功率40 W时4个指定点处60 s内的温升,多物理场仿真结果与测试结果吻合良好,验证了多物理场仿真的正确性。  相似文献   

5.
为了实现高均匀性的微波和油炸的联合加热,本文设计了一种延展的微波单模腔,扩大了微波加热区域,通过调节矩形加热区域在极化方向的尺寸可获得均匀的电场分布,同时建立了微波加热的多物理场仿真模型来计算腔体内的电磁场分布以及土豆的温度分布。仿真结果表明,在设计的腔体内模拟微波油炸初步实现对土豆油炸效率的提升,模拟土豆在矩形加热腔内做匀速平移运动以及调节上下两个端口之间的相位差随时间不断变化能够进一步提高油炸均匀性,并建立实验系统,验证了所提方法的准确性。还讨论了不同厚度、不同含水量的土豆片对油炸均匀性的影响。  相似文献   

6.
提出了一种平板微波炉新型曲面天线结构,与平面天线结构相比,其加热均匀性具有明显改善,同时消除采用平面天线的平板微波炉产生的微波盲区。该曲面天线由曲面金属片和内导体构成。根据微波天线理论,首先设计平面天线和曲面天线初始尺寸,然后运用电磁仿真软件HFSS实体建模,通过仿真空载和负载条件下,对比验证曲面天线能够提升均匀性和消除微波盲区,最后再通过天线手板测试验证。研究表明新型曲面天线相对平面天线,加热均匀性提升10.3%,且消除微波盲区。  相似文献   

7.
为了改善机载液晶显示器低温加热不均匀问题,提出了一种均匀加热的方法.首先,用COMSOL软件建立加热器模型和进行热仿真,得到了加热的功耗和温度分布图.接着做加热器低温加热实验,实验测量了温度值校正仿真模型边界的热对流系数,根据需求优化仿真加热器,设计了一种边缘温度高于中心区域的加热器,并根据仿真用等效占空比方式制作样品...  相似文献   

8.
微波加热作为一种新型的加热方式在许多领域中得到了广泛的应用,与传统的加热方法相比,微波加热具有高效节能、选择加热、清洁无污染等特点。多源微波加热结构是实现微波均匀高效加热的有效手段,也是微波加热领域未来的发展趋势。在工业应用的多源微波加热腔体中,保证加热效率的同时如何提升加热均匀性始终是该领域的研究重点。本文在现有微波加热模型的基础上,提出了一种新型的双端口双频微波加热模型。本文基于有限元方法的多物理场仿真软件COMSOL Multiphysics 5.4设计了一种915 MHz和2450 MHz的双频微波加热模型,通过端口之间的正交和缝隙滤波器的设计减少了两个端口之间能量的互相耦合,在保证加热效率的同时提高了加热的均匀性。  相似文献   

9.
家用微波炉内磁控管的频率会有波动,且难以测定。为考查微波频率波动对样品温度分布的影响, 获得更加精确的仿真结果,研究假设家用微波炉的频率以2. 45 GHz 为中心波动,并对不同波动范围的频率(2.44~2.46 GHz,2.43~2.47 GHz,2.41~2.49 GHz)与单个频率(2.45 GHz)的基于有限元模型的仿真结果与实验结果进行了比较分析。实验对象是放置于微波炉内加热60 s 的土豆泥。对于不同的频率范围分布,每隔0. 005 GHz 计算一次电磁功率密度,并根据余弦分布对它们进行加权平均,最后将电磁功率作为热源加热土豆泥。模拟结果分别与用热成像仪和光纤热电偶测定的土豆泥表面温度分布和各部位瞬时温度的实验值进行比较。结果显示频率波动范围在2.44~2.46 GHz 预测的温度场与实验值有较好的一致性;而在2.41~2.49 GHz 范围内,温度分布的均匀性最好。该模型也可为指导微波食品的开发提供理论依据。  相似文献   

10.
微波馈入位置对固体催化剂加热效果的影响   总被引:1,自引:0,他引:1  
本研究考察了微波从底部馈入反应器和从侧面馈人反应器时对固体催化剂的加热效果。从微波介电加热和热传导的物理规律出发,建立了两种不同微波馈入位置时对催化剂床层加热的模型,并通过COMSOL Multiphysics软件模拟分析其对加热效果的影响。结果表明:当采用底部馈入方式进行加热时,电磁场强度在下部分布较强很高,但在距离馈入口较远的区域电磁场强度较低,最终得到的温度分布均匀性较差;当采用微波从侧面馈入的方式进行加热时,催化剂床层区域的电场强度较大,且温度分布比较均匀。  相似文献   

11.
In this paper, radio frequency (RF), dc, and reliability performance have been studied on metal-insulator-metal (MIM) capacitors embedded in organic substrates. The MIM structure including ~74-nm SiN dielectric was prefabricated on Si and then transferred onto organic substrates (FR-4) by wafer-transfer technology (WTT). The RF characteristics up to 30 GHz were investigated by equivalent lumped circuit modeling, showing that the parameters associated with the MIM layers including the main capacitance, parasitic inductance, and resistance were only slightly changed by the WTT process. The substrate-related parasitics were reduced as a result of the replacement of lossy Si with insulating FR-4 substrates. Excellent capacitance linearity, low voltage coefficient (~2.2 ppm/V2), and temperature coefficient (~38 ppm/degC) were obtained for capacitors on FR-4 substrates. Current-voltage and time-dependent dielectric breakdown tests verified that, after the harsh processes of WTT, the MIM structures maintained the intrinsic reliability as those originally fabricated on Si. This paper, along with earlier reports, proved that WTT presented a new dimension to realize embedded capacitors for high-density circuit board and system-on-package applications  相似文献   

12.
For the first time, transferring the prefabricated capacitors on a silicon wafer onto FR-4 has been used to realize high-density metal-insulator-metal (MIM) capacitors on an organic substrate. A high capacitance density /spl sim/85 nF/cm/sup 2/ was achieved on FR-4 substrate with PECVD silicon nitride as the dielectric layer. Excellent voltage coefficient (/spl sim/2.2 ppm/V/sup 2/) and temperature coefficient (/spl sim/38 ppm//spl deg/C) were obtained for capacitors on FR-4. Dielectric leakage and breakdown characteristics have been assessed, and the results demonstrated acceptable performance. Thus, this technology provides a new method to embed/integrate high-density capacitors on organic substrates for the system-in-package applications.  相似文献   

13.
温变参数材料微波加热的数值模拟   总被引:4,自引:0,他引:4  
朱守正 《电子学报》1994,22(9):28-34
针对一般材料的介电参数等温度的函数,本文提出了一个微波加热分析的非线性模型。该模型基于交替迭代法求解描述加热过程的非线性耦合电磁学,热学微分方程组,通过若干数值分析的实例,说明了该方法可作为微波加热精确分析的一个有效方法。  相似文献   

14.
A macroscopic carbon nanotube (CNT) sheet‐based heating element having flexible, stretchable, and damage‐tolerant features, and wide applicability in harsh environments, is introduced. Because of the intrinsic connection of extremely flexible CNT bundles throughout the sample by van der Waals interactions without use of a binder, the electrical resistance variation of the CNT sheet on elastomer heating element as a function of strain is completely suppressed to some extent, even when stretched under up to 400% strain, which guarantees electrical stability under severe mechanical deformation. In addition, the spatial uniformity of the heat generated from the microaligned CNT bundles reduces the temperature variation inside the sample, which also guarantees thermal stability and operation at a higher average temperature. Such exceptional performance is achieved by the passivation of the elastomer layer on the CNT sheets. Furthermore, the mechanical robustness of this flexible, stretchable heating element is demonstrated by stable heater operation, even when the heating element is damaged. In addition, this design concept of CNT sheet on elastomer is extended to transparent flexible heaters and electric‐thermochromic windows.  相似文献   

15.
由于单个微波源的功率值有限,工业上往往采用多源微波加热以满足大功率需求。然而,额外 的微波馈口将增加端口间耦合,可能引起微波源损坏。因此,提出一种基于变换光学的新型超表面,使微波在 进入加热腔体的方向上正常传播而在相反方向被阻挡,从而减少功率反射和耦合。在二维数值模型中,采用 反向传播神经网络优化了超表面的介电性能,使得单源和双源微波加热的能量效率分别提高了42. 2%和53. 3%,且 均具有较好的加热均匀性。数值计算结果表明,超表面可工作在2. 45 GHz 频率,具有60 MHz 的带宽,工业应用前 景良好。  相似文献   

16.
A new model for dielectric loss, suitable for time domain modeling of printed circuit boards, is proposed. The model is based on a physical relaxation model. Complete time domain modeling of skin effect and dielectric losses in FR-4 boards are demonstrated and experimentally verified. Finally, the developed model is used to predict that FR-4 boards are useful for data rates up to 10 Gb/s  相似文献   

17.
In this paper, a novel anisotropic conductive film (ACF) flip chip bonding method using ultrasonic vibration for flip chip interconnection is demonstrated. The curing and bonding behaviors of ACFs by ultrasonic vibration were investigated using a 40-kHz ultrasonic bonder with longitudinal vibration. In situ temperature of the ACF layer during ultrasonic (U/S) bonding was measured to investigate the effects of substrate materials and substrate temperature. Curing of the ACFs by ultrasonic vibration was investigated by dynamic scanning calorimetry (DSC) analysis in comparison with isothermal curing. Die adhesion strength of U/S-bonded specimens was compared with that of thermo-compression (T/C) bonded specimens. The temperature of the ACF layer during U/S bonding was significantly affected by the type of substrate materials rather than by the substrate heating temperature. With room the temperature U/S bonding process, the temperature of the ACF layer increased up to 300degC within 2 s on FR-4 substrates and 250degC within 4 s on glass substrates. ACFs were fully cured within 3 s by ultrasonic vibration, because the ACF temperature exceeded 300degC within 3 s. Die adhesion strengths of U/S-bonded specimens were as high as those of T/C bonded specimens both on FR-4 and glass substrates. In summary, U/S bonding of ACF significantly reduces the ACF bonding times to several seconds, and also makes bonding possible at room temperature compared with T/C bonding which requires tens of seconds for bonding time and a bonding temperature of more than 180degC.  相似文献   

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