基于FPGA的FFT处理器设计

在OFDM系统中，调制和解调是通过FFT来实现的，FFT算法的实现是实时高速信号处理系统设计中的难点。针对FFT在OFDM通信系统中的实际应用，提出了一种切实可行的基于FPGA（现场可编程门阵列）的FFT实现方法与硬件结构。论文重点介绍FFT控制模块的设计原理，设计了一种新的FFT控制器结构，并采用Quartus对控制器做了详细的仿真研究。结果表明控制器使蝶形运算、读取数据、存储数据等操作协调一致，而且提高了系统的处理速度，在计算和数据通信间取得了平衡。     

数模同播音频广播系统中OFDM调制解调器的设计

设计了一种基于IFFT/FFT的高效OFDM调制解调器,实现数模同播音频广播系统中数字音频信号的OFDM调制解调,包括发射机中用于形成OFDM符号的时域与频域交织模块、OFDM调制模块和接收机中OFDM解调模块、时域与频域解交织模块。通过对IFFT/FFT算法的改进,该OFDM调制解调器中数据的输入顺序和输出顺序相同,不需要进行顺序输人逆序输出,并且可以把现有基2的幂次方的FFT变换扩展到任意点,实现适用于任意点的IFT/FFT,简化了IFFT/FFT模块本身和交织／解交织的资源消耗,巧妙地节省了系统所需的资源。     

OFDM系统的研究及软件无线电实现

OFDM系统有直接实现和DSP实现2种方法。在分析OFDM系统时发现,采用DFT方法处理OFDM不仅大大简化调制解调器的设计,而且可以在DSP芯片和硬件结构中快速实现FFT计算,因此在考虑OFDM系统的调制解调原理、系统采取的抗干扰能力的举措、利用DSP技术和FFT快速算法的基础上,设计了一个以DSP和FPGA为核心的实现OFDM发送、接收系统的方案。     

基于FPGA技术实现的OFDM基带调制系统

OFDM基带调制的目的是将高速的串行数据流转换成并行的低速数据流,再调制到频谱是正交重叠的子载波上进行传输,以便于提高频谱利用率。OFDM可以采用IFFT/FFT实现调制解调,在本设计中采用FPGA技术可以比较容易地实现OFDM通信系统的的调制器部分。整个系统包括RS编码、交织、QAM星座映射,IFFT和插入CP等模块,经过仿真验证:提高了系统的处理速度,具有较高的应用价值。     

一种超宽带系统OFDM调制模块的设计与实现

给出了一种超宽带系统中OFDM调制模块的设计方法,对于其中的FFT模块,选择了合适的算法并给出了理由,详细介绍了FFT模块的硬件实现。     

一种OFDM调制解调器的FPGA实现

OFDM技术在高速数据传输中得到了广泛的应用，根据OFDM的特点，提出了一种基于IFFT/FFT的OFDM调制解调器的低成本FPGA实现方法，最后给出了FPGA上的15点FFT运算单元的计算结果。实践证明，该方法具有设计简单、快速、高效和实时性好等特点。     

802．16e系统变长可配置FFT的设计与实现

针对IEEE 802.16e OFDMA系统中变长子载波数目的特点,提出了一种高速变长可配置FFT/IFFT的整体结构,并创新性的提出了一种基于流水线的蝶型单元分支结构.该设计可以满足IEEE 802.16e OFDMA系统中所有FFT/IFFT变长点数的系统要求,并可方便的将其拓展到多种变长FFT/IFFT的具体应用场合.通过该结构设计出的FFT/IFFT模块已成功通过了Stratix II EP2S180 FPGA的实际验证并顺利应用于IEEE 802.16d OFDM系统的接收机原型中.     

OFDM系统中64点FFT的FPGA设计

丈中叙述了一种基于FPGA的64点采用基4碟形结构的FFT(快速傅立叶变换)的设计以及在新一代5G通讯系统OFDM(正交频分复用)中的应用;每一级的设计结果与Ximulinx的仿真结果进行比较,以保证FFT设计过程的正确性;仿真结果表明该方案设计的FFT具有精度高,速度快,占用资源少等优点.     

DAB系统中2048点FFT的FPGA实现

针对DAB模式I下的系统参数,本文介绍了OFDM调制中2048点FFT的FPGA实现技术关键点,包括蝶形运算的设计,数据存储地址的产生,旋转因子及其存储地址的产生.同时介绍了块浮点结构实现FFT的方法.     

DVB-T中的FFT设计与实现

文章首先对DVB-T系统的概念和应用进行了阐述,接着重点对其中的FFT模块进行研究.由于DVB-T系统存在2K/8K模式,为方便起见,我们选择采用2K模式进行FFT模块的设计与实现,包括算法实现、系统架构设计、FPGA实现、仿真.最后对仿真结果进行了分析.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.