Eu2+、Dy3+、Li+共掺杂CaSi2O2N2荧光粉的发光性能

采用高温固相反应法制备了一系列白光LED用CaSi2O2N2:0.05Eu2+,xDy3+,xLi+(0≤x≤0.03)荧光粉.利用X射线衍射仪对样品的物相结构进行了分析,结果表明:Dy3+和Li+离子的掺入没有改变CaSi2O2N2:Eu2+荧光粉的主晶相.利用荧光光谱仪对样品的发光性能进行了测试,发现所有样品的激发光谱均覆盖了从近紫外到蓝光的较宽范围,400 nm激发下得到的发射光谱为宽波段的单峰,峰值位于545 nm左右,是Eu2+离子5d-4f电子跃迁引起的.Dy3+离子掺杂可以提高CaSi2O2N2:Eu2+荧光粉的发光强度,Dy3+与Li+共掺杂可进一步提高荧光粉的发光强度,当Dy3+和Li+的掺杂量为1mol%时,荧光粉的发光强度达到最大值,是单掺杂Eu2+的荧光粉发光强度的157%.     

Ca_(0.7)Sr_(0.3)MoO_4∶Eu~(3+),Gd~(3+),Na~+红色荧光粉的制备与发光性能研究

采用高温固相法制备了Ca0.7Sr0.18MoO4∶0.08Eu3+、Ca0.7Sr0.18-3x/2MoO4∶0.08Eu3+,xGd3+、Ca0.7Sr0.1MoO4∶0.08Eu3+,0.01Gd3+,0.11Na+红色荧光粉,用XRD表征其物相,用荧光激发及发射光谱表征其发光性能,并进行研究。结果表明,采用该方法可得到CaMoO4物相结构。掺杂Gd3+的荧光粉发光强度得到增强,在395nm激发下,Ca0.7Sr0.18-3x/2MoO4∶0.08Eu3+,xGd3+荧光粉发红光,在616nm附近的相对发光强度最大。另外,在加入Na+作为电荷补偿剂后,发光性能有所提高。     

Eu2+在Sr2SiO4·SrCl2材料中的发光特性

采用高温固相法制备了Sr2SiO4.SrCl2∶Eu2+荧光粉,并研究了材料的发光特性。X射线衍射结果显示,Sr2SiO4.SrCl2∶Eu2+材料是由SrCl2∶Eu2+和Sr2SiO4∶Eu2+构成的复合化合物。以320nm紫外光作为激发源,测得材料的发射光谱呈宽谱特征,覆盖350～600nm。在0.5%～2%范围增大Eu2+掺杂量时,位于蓝色光区域的发射峰位置没有变化,为403nm,处于长波方向的发射峰呈现出先红移、后蓝移的变化趋势,但两发射峰的强度均明显减小。监测两发射峰,所得结果分别对应SrCl2∶Eu2+和Sr2SiO4∶Eu2+材料的激发光谱,覆盖250～400nm。分析认为,材料的光谱分布及发射强度的变化与晶场环境及处于不同Sr2+格位上Eu2+间的能量传递等有关。     

高温固相法制备CaCO_3:Eu~(3+),Li~+红色荧光粉

以CaCO3、Eu2O3和Li2CO3为主要原料,采用高温固相法,首次制备CaCO3:Eu3+,Li+红色荧光粉。通过对前驱物进行同步差热分析(TG-SDTA),确定其煅烧温度;利用X射线衍射(XRD)、傅立叶变换红外光谱(FT-IR)和拉曼光谱对样品的结构进行表征;采用荧光光度仪对样品的发光性能进行测试。结果表明:前驱物的煅烧温度为655℃时,样品主晶相为方解石型CaCO3,掺杂Eu3+和Li+离子分别作为发光中心和敏化剂进入到CaCO3的晶格中。荧光粉的最大激发峰位于272nm,属于紫外激发,最大发射峰位于608nm附近,对应于Eu3+离子的5d0→7f2跃迁,并且Eu3+离子在CaCO3基质中处于偏离或无反演对称中心的格位上。     

Eu3+掺杂Bi4Si3O12材料的制备和发光特性（英文）

采用传统的固相合成法制备了Eu3+掺杂的Bi4Si3O12发光材料.使用X射线粉末衍射技术对制备的发光粉体进行了表征.Eu3+掺杂的Bi4Si3O12材料的激发谱表明,在265 nm处强而宽的谱带对应于Eu3+→O2-之间的电荷转移跃迁带.在用紫外光激发的荧光光谱中,Eu3+掺杂的Bi4Si3O12材料在614 nm处有强的红光发射.材料的激发和发射光谱结果表明,Eu3+掺杂的Bi4Si3O12有望做为红色固体发光的候选材料.     

煅烧温度对红色长余辉发光材料Sr_3Al_2O_6:Eu~(2+),Dy~(3+)性能的影响

采用溶胶凝胶法合成了Sr3Al2O6:Eu2+,Dy3+长余辉发光材料,利用X射线衍射仪(XRD)对材料的物相进行了分析,采用荧光分光光度计、照度计测定了样品的发光特性。XRD结果表明:随着煅烧温度的升高,SrCO3杂相的衍射峰越来越弱,Sr3Al2O6相的衍射峰越来越强,1200℃时发光基质为纯的Sr3Al2O6相,1250℃时出现新的SrAl2O4杂相。激发光谱和发射光谱结果表明:长余辉发光材料的激发峰位于473nm,发射峰位于612nm,归属于Eu2+的4f65d1→4f7特征发光。温度升至1250℃时,Eu2+的发射峰为612nm和520nm,后者归属于Eu2+在发光基质SrAl2O4中的发光。综合分析得制备Sr3Al2O6:Eu2+,Dy3+发光材料合适的煅烧温度为1200℃,在此温度下,材料具有较好的初始亮度和余辉时间。     

白光LED用双层钙钛矿Sr_3Ti_2O_7:Eu~(3+)荧光粉的制备及其发光性能

采用高温固相法制备双层钙钛矿Sr3Ti2O7:Eu3+系荧光粉。利用X射线衍射(XRD)、扫描电子显微镜(SEM)和荧光光谱,研究了不同煅烧温度对双层钙钛矿Sr3Ti2O7:Eu3+荧光粉的晶体结构、形貌和发光性能的影响。结果表明:荧光粉在煅烧温度为1300℃时为纯双层钙钛矿Sr3Ti2O7相,且其有效激发波长为在395nm和465nm,这与当前近紫外和蓝光LED芯片的输出波长相匹配,激发产生的相应发射波长分别为618nm和626nm。该荧光粉是一种理想的白光LED用红色荧光粉。     

稀土多钨酸盐红色荧光粉在白光LED中的应用研究

利用高温固相法合成了Ca9Gd2W4O24:Eu3+和Sr9Gd2W4O24:Eu3+两个系列四钨酸盐体系以及Ca3La2W2O12:Eu3+二钨酸盐体系荧光粉,对比其荧光性能,结果发现此三种多钨酸盐荧光粉在395nm的近紫外和460nm的蓝光区都有较高的激发强度,与现有商业化近紫外光、蓝光LED芯片的发射光谱吻合,可以被这两种LED芯片有效激发,发射色纯度较高的红光,是潜在的紫光和蓝光转换型白光LED用红色荧光粉.Eu3+离子在Ca9Gd2W4O24和Sr9Gd2W4O24两个四钨酸盐体系中没有浓度猝灭效应,而在Ca3La2W2O12二钨酸盐体系中的最佳掺杂浓度为40%.以其中性能优良的Ca9Eu2W4O24、Sr9Eu2W4O24和Ca3La1.2Eu0.8W2O12结合400nm发射的紫光InGaN芯片以及460nm发射的蓝光InGaN芯片制备LED器件,探讨稀土多钨酸盐红色荧光粉在白光LED中实际应用存在的优点和局限性.     

稀土离子含量对Sr_2Si_5N_8:Eu~(2+)红色荧光粉发光性能及其电子结构的影响

利用碳热还原氮化法制备了Sr2-xSi5N8:xEu2+红色荧光粉,其中x=0.005~0.2,分析了稀土Eu2+离子浓度对荧光粉发光性能的影响规律,采用DFT理论分析了Sr2-xSi5N8:xEu2+的电子结构和发光原理。结果发现,随着Eu2+浓度的升高,荧光粉发射光谱的发射峰值出现红移。实验研究发现其浓度猝灭点为x=0.02,当x=0.02时,发射光强度最大,发射光谱为小于600nm的橙黄光。当x在0.05~0.15的范围时,发光强度衰减幅度较小,且发射光谱为610nm以上的红光。利用第一性原理对Eu2+浓度x=0.015625~0.125的Sr2-xSi5N8:xEu2+荧光粉的能带结构计算显示,随着Eu2+浓度的升高带隙减小,理论计算浓度猝灭点在x=0.0625和x=0.125之间。     

Effect of La3+ Doping on the Luminescence of BaSi2O2N2 : Eu2+ Phosphors

研究了L3+掺杂对BaSi2O2N2∶Eu2+发光性能的影响.通过高温固相反应制备了纯相的Ba0.94-Si2O2N2∶0.06Eu2+荧光粉.在此基础上进行La3+的掺杂,并对少量La3+掺杂的LaxBa0.94-1.5xSi2O2N2∶0.06Eu2+荧光粉的结构和光学性能进行了研究.XRD图谱表明粉体在低掺杂时保持了基质BaSi2O2N2的晶格结构.通过共掺x=0.035的La3+可使荧光粉的发光效率提高到157％,原因是La3+部分取代Ba12+产生了阳离子缺陷,其可以吸收光源能量并将能量传递给Eu2+.最终这些能量通过Eu2+的4f65d→4f7跃迁以光辐射的形式释放出来.     

Synthesis and luminescence properties of Sr2SiO4: Eu3+, Dy3+ phosphors by the sol-gel method

The Sr2SiO4:Eu3+, Dy3+ phosphors for white light emitting diodes (LEDs) were synthesized by the sol-gel method. The microstructure and luminescent properties of the obtained Sr2SiO4:Eu3+, Dy3+ particles were well characterized. The results demonstrate that the Sr2SiO4:Eu3+, Dy3+ particles, which have spherical morphology, emitted an intensive white light emission under excitation at 386 nm. The phosphors show three emission peaks: the blue emission at 486 nm corresponding to the 4F(9/2)-6H(15/2) transition of Dy3+, the yellow emission at 575 nm corresponding to the 4F(9/2)-6H(13/2) transition of Dy3+, and the red emission at 615 nm corresponding to the 5D0-7F2 transition of Eu3+. At the same time, the effect of Eu3+ concentration on the emission intensities of Sr2SiO4:Eu3+, Dy3+ was investigated in detail. The phosphors used for white LEDs were obtained by combining near ultraviolet (NUV) light (386 nm) with Sr2SiO4:0.04Dy3+, 0.01Eu3+ phosphors with the characteristic of Commission Internationale de l'Eclairage (CIE) chromaticity coordinate (x, y) of (0.33, 0.34), and color temperature Tc of 5,603 K. In addition, the effect of the charge compensators (Li+, Na+, and K+ ions) on the photoluminescence (PL) emission intensities were studied.     

Sr0.95Zn0.05Se:Eu2+ and CdSe/ZnS nanocrystals hybrid phosphors for enhancing color rendering index of white light emitting diode

In this study, the yellow emitting cubic structure of Sr0.95Zn0.05Se:Eu2+ phosphors were prepared by high temperature solid state reaction. The Sr0.95Zn0.05Se:Eu2+ phosphors exhibited strong excitation intensity under 400-460 nm region, and broad band emission appeared at around 545-600 nm due to the d-f transition of Eu2+. To enhance the red emission, HDA/TOP/TOPO capped CdSe/ZnS NCs were synthesized via fast nucleation and slow growth method. The narrow emission peak was located at 615 nm with 69% of high quantum yield. Bright white emission was generated by combining a 460 nm InGaN LED chip with CdSe/ZnS NCs and Sr0.95Zn0.05Se:Eu2+ hybrid phosphors. The fabricated white LEDs showed warm white light with acceptable CIE chromaticity coordinate variation from (0.343, 0.255) at 20 mA to (0.335, 0.250) at 50 mA. The addition of CdSe/ZnS NCs contributed to the extension of white light spectrum by supplement of the red region. The color rendering index was largely enhanced from 41.7 to 79.7 compared to the Sr0.95Zn0.05Se:Eu2+ based phosphors white LED.     

荧光粉Sr3-x-yAl2O6∶xCe3+,yEu2+的制备及其发光特性

采用高温固相反应法制备了Sr3-x-yAl2O6:xCe3+,yEu2+(x=0,y=0;x=0.04,y=0;x=0.04,y=0.02;x=0.04,y=0.04;x=0.04,y=0.06;x=0.04,y=0.08;x=0,y=0.04)荧光粉,研究其相组成与荧光特性,结果表明,样品具有单相Sr3Al2O6晶体结构。在360nm波长的紫外光激发下,Ce3+离子辐射出峰值在434nm附近的宽谱蓝光。通过能量传递作用,Eu2+离子辐射峰值为517nm左右的宽谱绿光。Ce3+和Eu2+的荧光组合获得了色坐标为(0.2611,0.3313)的近白光发射。样品的激发光谱分布在250～400nm的波长范围,这种荧光粉有望在紫外或近紫外激发的白光LED中获得应用。     

Photoluminescence properties of NaGd(MoO4)2:Eu nanophosphors prepared by sol-gel method

NaGd(MoO₄)₂:Eu³⁺ (hereafter NGM:Eu) phosphors have been prepared by sol-gel method. The properties of the resulting phosphors are characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), photoluminescence (PL) spectra and decay curve. The excitation spectra of NGM:Eu phosphors are mainly attributed to O → Mo charge-transfer (CT) band at about 282 nm and some sharp lines of Eu³⁺ f-f transitions in near-UV and visible regions with two strong peaks at 395 and 465 nm, respectively. Under the 395 and 465 nm excitation, intense red emission peaked at 616 nm corresponding to ⁵D₀ → ⁷F₂ transition of Eu³⁺ are observed for 35 at.% NGM:Eu phosphors as the optimal doping concentration. The luminescence properties suggest that NGM:Eu phosphor may be regarded as a potential red phosphor candidate for near-UV and blue light-emitting diodes (LEDs).     

Luminescence properties of nano-crystalline Ba3MgSi2O8:Eu2+, Mn2+ phosphors

Ba3MgSi2O8:Eu2+, Mn2+ phosphors were synthesized by the sol-gel method and high temperature solid-state reaction method, respectively. XRD (X-ray diffraction), FT-IR (Fourier transform infrared spectroscopy), PL (photoluminescence spectra), and PLE (photoluminescence excitation spectra) were measured to characterize the samples. Emission and excitation spectra of our Ba3MgSi2O8:Eu2+, Mn2+ phosphors monitored at 441, 515, and 614 nm are depicted in the paper. The emission intensities of 441 and 515 nm emission bands increase with increasing Eu2+ concentration, while the peak intensity of the 614 nm band increases with increasing Mn2+ concentration. We conclude that the 515 nm emission band is attributed to the 4f(6)5d transition of Eu2+ ions substituted by Ba2+ sites in Ba2SiO4. The 441 nm emission band originates from Eu2+ ions, while the 614 nm emission band originates from Mn2+ ions of Ba3MgSi2O8:Eu2+, Mn2+. Nano-crystalline Ba3MgSi2O8:Eu2+, Mn2+ phosphors prepared by the sol-gel method show higher color rendering and better color temperature in comparison with the samples prepared by high temperature solid-state reaction method.     

Ca10K（PO4）7:Eu3+红色荧光粉的制备及其发光性质

高温固相法合成了Ca10-xK(PO4)7:xEu3+(x=0.02,0.04,0.06,0.08,0.10,0.12,0.14和0.16)的红色荧光粉。X射线衍射表明,样品具有标准的Ca10K(PO4)7六角晶体结构,且无第二相存在。在393nm的波长激发下,样品获得由Eu3+的4f-4f跃迁产生红光发射,其中以613nm附近的5 D0→7F2电偶极跃迁发射为最强。通过调节Eu3+的掺杂浓度,获得了色坐标与商业化Y2O2S:Eu3+荧光粉十分接近的接近纯色的红色荧光粉。Ca10K(PO4)7:Eu3+是一种可望应用于紫外激发的白光LED的红色荧光粉。     

Eu3+掺杂的硼酸锶系列荧光体的合成及其发光性能

采用溶胶-凝胶法和高温固相反应法合成了Eu^3 掺杂的SrB4O7、SrB2O4、Sr2B2O5、Sr3B2O6荧光体．荧光光谱测试结果表明在不同基质中Eu^3 的荧光发射是有区别的，Sr2B2O5：Eu^3 、Sr3B2O7：Eu^3 发射峰在610nm左右的红光区，SrB2O4：Eu^3 的发射峰在593nm的橙色区，而SrB4O7：Eu^3 则表现出了Eu^2 离子的特征峰，产生这种区别主要是由Eu^3 所处的配位环境不同造成的．荧光体SrB4O7：Eu^3 、SrB2O4：Eu^3 、Sr2B2O5：Eu^3 、Sr3B2O6：Eu^3 的最佳掺杂浓度为2％左右．     

Y2O2S:0.03Eu,0.03Ti的长余辉特性及Ti向Eu3+的余辉传能机制

采用高温还原法合成了Eu，Ti共激活橙红色Y2O2S长余辉发光材料，并测量了Y2O2S：0．03Eu,0．03Ti磷光体的荧光光谱，余辉分辨和余辉衰减曲线谱．实验结果表明，Y2O2S：0．03Eu,0．03Ti磷光体的发射谱由一系列Eu^3＋离子内部能级跃迁的尖峰组成；余辉分辨谱则不同，由一个主峰位于565nm的宽发射带和一系列波长范围位于500nm以上的窄发射带两种峰形组成，可分别归为Ti离子的宽带余辉发射和三价Eu^3＋的线状余辉发射,分析认为，样品中存在Ti余辉发射向Eu^3＋内部能级间产生选择性的余辉传能机制，从而导致Y2O2S：0．03Ti，0．03Eu磷光体中同时出现两种发光中心离子的余辉分辨谱现象．     

The sol-gel process synthesis of GdAl3(BO3)4:Eu3+ nanophosphors

GdAl3(BO3)4:Eu3+ red phosphors were prepared using citric acid as complex agent by sol-gel technique. The preparation conditions of the precursor synthesis, including crystallization temperature and crystallization time were investigated. Their structure and luminescence properties were characterized by X-ray diffraction (XRD) analysis and fluorescence spectrometry. The results showed that GdAl3(BO3)4:Eu3+ phosphor crystallized at 960 degrees C for 2 h have been synthesized by sol-gel method. The phosphor is distributed into hexagonal system and the lattice parameters are a = 9.2992 nm c = 7.2577 nm. The excitation spectrum of Gd(0.95)Al3(BO3)4:Eu(0.05)3+ samples is complex and the frequency scale is wide. It consists of a number of main excitation transitions namely 8S(7/2) --> 6IJ (270 nm) of Gd3+, and the others 7F0 --> 5L6 (400 nm), 7F0 --> 5D2 (472 nm) and 7F0 --> 5D1 (542 nm) of Eu3+. The main emission peaks are 614 nm and 619 nm, which are the characteristic emission peaks of Eu3+. These emission peaks correspond to the transition from 5D0 to 7F2 of Eu3+. The shape and the wavelength range of the emission spectrum are similar when the sample was excited by different excitation spectrum. Only the relative intensity of the emission peaks is different from each other.