纳米金属变形孪生研究进展

孪生是金属塑性变形的一种重要形式,改变晶粒形状与晶体取向,使金属发生宏观变形。与中／高层错能面心立方结构（FCC）多晶中的情况不同,变形孪生是FCC纳米金属的重要塑性协调方式,相同柏氏矢量的Shockley不全位错从晶界形核并发生滑移,每层（111）面相对于其毗邻面沿孪生方向位移原子间距的分数值,使局部区域（即孪晶）均匀切变,称为MAP（monotonic activation of partials）机制。对纳米金属的孪生变形影响宏观塑性变形和力学性能的机理尚没有很好的解释。     

ODS铁素体钢中微裂纹形核过程的TEM原位观察

采用透射电子显微镜原位位伸范膜试样法研究了ＯＤＳ铁素体钢中位错发射及微裂纹形核，钝化和扩展的过程。结果表明，ＯＤＳ铁素体钢在原位拉伸时，裂尖首先发出大量位错并形成无位错区，保持恒位移，纳米级微裂纹在裂纹顶端连贯形核或在ＤＦＺ中不连续形核，这个微裂纹并不钝化成孔洞。     

环境断裂的位错层次研究

从位错层次评述了断裂和环境断裂微裂纹的形核过程,对于金属材料,任何断裂过程（韧断,本质脆断,氢脆,应力腐蚀,液体金属脆）均以位错发射,运动为先导,只有局部塑性应变发展到临界条件,应力集中使局部应力等原子键合力时才出现微裂的形核,环境（氢,腐蚀介质,液体金属）通过促进局部塑性变形引起应力脆断。不同环境促进位错发射,运动的原因不同。     

高压扭转大塑性变形Al–Mg合金中的晶界结构*

利用透射电镜和高分辨透射电镜(HRTEM)研究了高压扭转大塑性变形纳米结构Al–Mg合金中的位错和晶界结构。结果表明: 对尺寸小于100 nm的晶粒, 晶内无位错, 其晶界清晰平直; 而尺寸大于200 nm的大晶粒通常由几个亚晶或位错胞结构组成, 局部位错密度可高达10¹⁷ m^-2, 这些位错往往以位错偶和位错环的形式出现。用HRTEM观察到了小角度及大角度非平衡晶界、小角度平衡晶界和大角度Σ9平衡晶界等不同的晶界结构。基于实验结果, 分析了局部高密度位错、位错胞和非平衡晶界等在晶粒细化过程中的作用, 提出了高压扭转Al–Mg合金的晶粒细化机制。     

纳米尺度圆孔表面薄膜界面失配位错形核机理

研究了无限大基体内纳米尺度圆孔表面薄膜中界面螺型位错形核的临界条件,薄膜考虑了表/界面效应。运用弹性复势方法,获得了两个区域应力场的解析解答,并导出位错形核能公式,由此讨论了表/界面效应对薄膜界面位错形核的影响规律。算例结果表明,表/界面效应在纳米尺度下对位错形核的影响显著,不同表/界面效应下位错形核的临界薄膜厚度有很大差异,当基体与薄膜的相对剪切模量超过某一值后,只有考虑负的表/界面应力时位错才有可能形核;薄膜厚度在小于某一临界尺寸时负的表/界面应力更容易位错形核,薄膜厚度大于某一临界尺寸时正的表/界面应力更容易位错形核。     

7475铝合金电致超塑性效应中位错运动的动力学分析

在7475铝合金的超塑性变形过程中对试样通以脉冲电流,发现脉冲电流能提高该合金的超塑性变形性能,并使晶内位错呈顺电子流动方向排列的形态.分析认为这种位错形态产生于电子风力对位错运动的促进作用.对于位错电子风力的计算引入了两种方法,这两种计算方法所得出的位错电子风力都与电流密度成正比.     

钛酸锶钡薄膜中微观结构缺陷及其形成机理

采用脉冲激光沉积方法,在(001)单晶铝酸镧(LaAlO3)衬底上成功制备出钛酸锶钡(Ba0.75Sr0.25TiO3)外延薄膜.利用高分辨电子显微学对其微观结构进行了详细研究,并探讨了其微观结构缺陷的形成机理.研究发现,在钛酸锶钡外延薄膜中存在失配位错和穿透位错,且存在直线型和锯齿型的两种反相畴界.失配位错是由于钛酸锶钡薄膜与LaAlO3单晶衬底之间存在较大的晶格失配形成的,可分解为不全位错;穿透位错可以分解为不全位错伴随有堆垛层错的形成.反相畴界的形成是由于衬底表面存在台阶,直线型反向畴界是由于形核点离台阶处较近产生的,而锯齿型反向畴界是由于形核点离台阶处较远而形成.研究结果可为其它钙钛矿型外延薄膜中微观结构缺陷的形成机理提供理论指导.     

压头对Ni基单晶合金纳米压痕结果的影响

采用分子动力学方法研究压头尺寸(半径分别为1.5nm、2.5nm、3.5nm、4.5nm)和加载速度(10m/s、20m/s、30m/s、40m/s)对Ni基单晶合金γ/γ′(001)晶面纳米压痕测试结果(弹性模量和硬度)的影响。结果表明压头尺寸和加载速度对Ni基单晶合金γ/γ′(001)晶面的纳米压痕测试结果有显著影响。采用中心对称参数研究各模型不同压入深度时基体中位错的形核和运动情况,结果表明压头尺寸越大、加载速度越快,基体γ相中位错形核形式越剧烈。压头尺寸较大或加载速度较快的模型在γ相中产生了棱柱型位错环,棱柱型位错环在γ相中沿着{111}面滑移,最终在γ/γ′相界面处塞积,然后有新的棱柱型位错环产生。     

氢对位错运动的影响

金属材料氢脆的根本原因是氢对位错运动、分布和结构的影响。本文利用透射电镜观察了渗氢与未渗氢试样中的形变亚结构。结果表明氢促进了位错的平面滑移 ,阻碍了交滑移 ,从而加剧位错塞积 ,导致位错分布和塑性变形的不均匀性。文中提出了几种形变亚结构特征的形成机制 ,并进一步讨论了氢影响位错运动的物理原因。     

30CrMnSiA钢超塑性变形中的机理问题

利用扫描电镜和透射电镜研究了30CrMnSiA钢超塑性变形中组织结构变化。结果表明,变形中合金元素的扩散导致横向晶界的宽化,并且富集了Si、Cr、Mn元素。三角晶界上呈现的显微空洞宏观调节了晶粒的三维重排过程。未溶碳化物与晶格位错、晶界以及晶界位错之间有相互作用关系。扩散和位错运动微观调节了晶界滑动,并导致它的发展。     

Low Energy Dislocation Structure in Deformed Metals

In this paper,the dislocation distribution struc-ture in deformed metal is discussed.The flow stressof material for the heterogeneous dislocation distri-bution which tends to the flow stress for the homo-geneous dislocation distribution in the limiting caseis derived.The causes and the effects of the longrange internal stresses are discussed.The totaldeformation energy of material system is obtainedand the trend of evolution of dislocation distribu-tion in deformed metals is discussed simultaneously.No micromechanisms of dislocations are involvedin the discussion,therefore the theory developed inthis paper is universal.     

Plastic Deformation in Quench-and 650℃ Tempered Steel

The variations of the dislocation structuresin the quench and 650℃ tempered steel withincrease of elongations have been investigatedby using transmission electron microscopy. Inthe small elongation stage, the boundaries betweenferrite and carbide in this steel can releasedislocations. As the elongations increase, themoving dislocations in the ferrite slip ontothe carbides. Then, the interaction betweenmoving dislocations and dislocations releasedfrom this boundaries, and the interaction betweenthe dislocations moving to the carbides in everyslip plane occurs. Thereby, the dislocationtangles around the carbides can be formed.In the large elongation stage, the dislocationtangles with high dislocation density and thedeveloped dislocation cells are formed.     

Effect of crystallographic dislocations on the reverse performance of 4H-SiC p-n diodes

A quantitative study was performed to investigate the impact of crystallographic dislocation defects, including screw dislocation, basal plane dislocation, and threading edge dislocation, and their locations in the active and JTE region, on the reverse performance of 4H-SiC p-n diodes. It was found that higher leakage current in diodes is associated with basal plane dislocations, while lower breakdown voltage is attributed to screw dislocations. The above influence increases in severity when the dislocation is in the active region than in the JTE region. Furthermore, due to the closed-core nature, the impact of threading edge dislocation on the reverse performance of the p-n diodes is less severe than that of other dislocations although its density is much higher.     

Interaction of a transonic dislocation with subsonic dislocation and point defect clusters

The moving speeds of all observed dislocations in crystals are subsonic. There has been a view in the literature that the speed of subsonic dislocations can not be accelerated above the speed of sound because the energy required would be infinitely large. Recent molecular dynamics (MD) simulation had shown that it is possible to generate dislocations with an initial moving speed higher than the velocity of sound in solids. This raises a question: what will happen when a supersonic dislocation meets other defects along its moving path? This work reports the results of MD simulation on the interaction of a transonic dislocation with other subsonic dislocations as well as with point defect clusters. The results show that a vacancy cluster such as a void has an insignificant slow-down effect on the transonic dislocation, while a subsonic dislocation slows down the transonic dislocation to subsonic one. In some cases, the subsonic dislocation (or a subsonic part of a transonic dislocation) can overcome the traditional sound barrier.     

20CrMnTi钢位错密度的测定及其位错形态研究

为了探讨20CrMnTi钢的冷变形强化过程位错密度的分布与位错形态,采用X射线衍射法及多晶单线付氏分析理论,在实验基础上测量了不同应变量冷变形时20CrMnTi钢的位错密度,分析了应变量与位错密度及加工硬化的关系,利用透射电子显微镜对冷镦粗件的位错形态进行了观察.结果表明,位错密度随变形量的增加而提高,同时,随变形量增加加工硬化效果增强,晶体位错形态为"曲折"形位错线,应变量较大时位错呈胞状结构.     

Pipe diffusion along isolated dislocations

The complete solution of dislocation pipe diffusion is applied to experimental data for different metals. For f.c.c. metals the mechanisms of vacancies bound to the dislocation and of diffusion in the stacking fault ribbon between dissociated dislocations are discussed. Cationic diffusion along dislocations will be obscured in the alkali halides by aliovalent impurities, but it may be observed in some metallic oxides. Anionic diffusion along dislocations may be found in all NaCl-type ionic crystals.     

Determination of average dislocation densities in metals by analysis of digitally processed transmission‐electron microscopy images

This paper describes an effective and simple procedure to derive information about the dislocation density distribution in metals by applying standard techniques of digital image processing on gray scaled microstructure images obtained from transmission‐electron microscopy. In a representative transmission‐electron microscopy image, two local dislocation density values were investigated by classical methods and were used as input parameter for further processing. A correlation between dislocations and image intensities is assumed such that dark areas in microstructural images are seen as a dense concentration of dislocations. Then, the contrast is increased for each transmission‐electron microscopy photography. In the next step, posterization, a gradation of tone, is applied to these images. From this, a pixel weighted average distribution of gray level correlated dislocation densities is obtained as well as an average value for a given set of images. The implementation of the several processing steps is done in Matlab employing graphical user interfaces.     

Modelling cracks in finite bodies by distributed dislocation dipoles

The method of continuous distribution of dislocations is extended here to model cracks in finite geometries. The cracks themselves are still modelled by distributed dislocations, whereas the finite boundaries are represented by a continuous distribution of dislocation dipoles. The use of dislocation dipoles, instead of dislocations, provides a unified formulation to treat both simple and arbitrary boundaries in a numerical solution. The method gives a set of singular integral equations with Cauchy kernels, which can be readily solved using Gauss–Chebyshev quadratures for finite bodies of simple shapes. When applied to arbitrary geometries, the continuous distribution of infinitesimal dislocation dipoles is approximated by a discrete distribution of finite dislocation dipoles. Both the stress intensity factor and the T -stress are evaluated for some well-known crack problems, in an attempt to assess the performance of the methods and to provide some new engineering data.     

Screw dislocations interacting with a partially debonded interface in cylindrically anisotropic composites

Interaction between screw dislocations and a partially debonded interface in cylindrically anisotropic composites subjected to uniform stress at infinity is investigated in this paper. Using Muskhelishvili’s complex variable method, the closed forms of complex potentials are obtained for a screw dislocation and a screw dislocation dipole located inside either matrix or inhomogeneity. Explicit expressions of stress intensity factors at the crack tips, image forces and image torques acting on dislocation or the center of dipole are provided. The results show that the crack and dislocation geometry combination plays an important role in the interaction between screw dislocations and interface crack. Furthermore, it is found that the anisotropy of solids may change the shielding and anti-shielding effects arising from screw dislocations and the equilibrium position of screw dislocations. The presented solutions are valid for anisotropic, orthotropic or isotropic composites and can be reduced to some novel or previously known results.