Efficient VLSI for Lempel-Ziv compression in wireless datacommunication networks

We present a parallel algorithm, architecture, and implementation for efficient Lempel-Ziv (LZ)-based data compression. The parallel algorithm exhibits a scalable, parameterized, and regular structure and is well suited for VLSI array implementation. Based on our parallel algorithm and systematic design methodologies, two semisystolic array architectures have been developed which are low power and area efficient. The first architecture trades off the compression speed for the area and has a low run-time overhead for multichannel compression. The second architecture achieves a high compression rate (one data symbol per clock) at the expense of the area due to a large clock load and global wiring. Compared to a recent state-of-the-art parallel architecture, our first array structure requires significantly less chip area (≃330 k versus ≃36 k transistors) and more than an order of magnitude less power (≈1.0 W versus ≈70 mW) while still providing the compression speed required for most data communication applications. Hence, data compression can be adopted in portable data communication as well as wireless local area networks. The second architecture has at least three times less area and power while providing the same constant compression rate. To demonstrate the correctness of our design, a prototype module for the first architecture has been implemented using 1.2 μ complementary metal-oxide-semiconductor (CMOS) technology. The compression module contains 32 simple and identical processors, has an average compression rate of 12.5 million bytes/s, and consumes 18.34 mW without the dictionary (≈70 mW with a 4.1k SRAM for the dictionary) while operating at a 100 MHz clock rate (simulated)     

FPGA器件中PLL的设计应用

讨论了基于SRAM技术的可编程逻辑器件提供的PLL和全局时钟网络对时钟操作的解决方案。针对Altera公司的Cyclone EP1C6系列芯片,讨论了输出频率与参考频率的关系。介绍了PLL的功能实现和工作模式,并以基于FPGA的DDR控制器中的时钟设计为例,介绍了PLL在实际应用中的设计方法和步骤。最后讨论了在设计时应该注意的问题和解决办法。     

An 18-Mb, 12.3-GB/s CMOS pipeline-burst cache SRAM with 1.54Gb/s/pin

An 18-Mbit CMOS pipeline-burst cache SRAM achieves a 12.3-Gbyte/s data transfer rate with 1.54-Gbit/s/pin I/O's. The SRAM is fabricated on a 0.18-μm CMOS technology. The 14.3×14.6-mm² SRAM chip uses a 5.59-μm², six-transistor cell. Circuit techniques used for achieving high bandwidth include fully self-timed array architecture, segmented hierarchical sensing with separated global read/write bitlines in different metal layers, a high-speed data-capture technique, a reduced-swing output buffer, and a high-sensitivity, high-bandwidth input buffer     

An Experimental 0.8 V 256‐kbit SRAM Macro with Boosted Cell Array Scheme

This work presents a low‐voltage static random access memory (SRAM) technique based on a dual‐boosted cell array. For each read/write cycle, the wordline and cell power node of selected SRAM cells are boosted into two different voltage levels. This technique enhances the read static noise margin to a sufficient level without an increase in cell size. It also improves the SRAM circuit speed due to an increase in the cell read‐out current. A 0.18 µm CMOS 256‐kbit SRAM macro is fabricated with the proposed technique, which demonstrates 0.8 V operation with 50 MHz while consuming 65 µW/MHz. It also demonstrates an 87% bit error rate reduction while operating with a 43% higher clock frequency compared with that of conventional SRAM.     

High Performance Static Segment On-Chip Memory for Image Processing Applications

The performance of the processor core depends on the configuration parameters and utilization of on-chip memory in multimedia applications such as image, video and audio processing. The design of the on-chip memory architecture is critical for power and area efficient design without compromising quality in data-intensive computing applications. This paper proposes a design of high speed, area, and energy efficient Static Segment On-Chip (SSOC) memory for error-tolerant applications. In this static segment method, n-bit data array is reduced by m-bit data array for significant value of input data to achieve balanced design metrics at the cost of accuracy. The proposed m-bit static segmentation algorithm is implemented and verified in Single Port Static Random Access Memory (SP SRAM) architecture for the approximate computing applications. From the overall simulation results, the proposed 4-bit SSOC SP SRAM design provides 49.02% area savings, 50.62% power reduction and 16.92% speed improvement at the cost of 0.64% Peak Signal to Noise Ratio (PSNR) and exhibits same visual quality in comparison with the existing 8-bit conventional on-chip SP SRAM design in the image processing applications.     

Soft-defect detection (SDD) technique for a high-reliability CMOSSRAM

A complete data retention test of a CMOS SRAM array accomplished at room temperature using the soft-defect detection (SDD) technique is reported. The SDD technique uses a connectivity analysis and cell-array current test to detect physical open faults that can cause data retention failures. An extensive circuit analysis was made to establish the operation theory and special circuit design features required for SDD. Complete SDD circuits have been developed and implemented into a 16 K CMOS SRAM module for a 32-b microcontroller. Full operation and effectiveness of the SDD technique were verified from a special experimental 16 K CMOS RAM module with built-in defective cells. the SDD technique can accomplish not only the retention test at room temperature, but also the detection of other defects that were heretofore impractical to detect using the conventional retention test technique of high-temperature bakes and functional tests     

一种基于环振的SRAM型FPGA延迟测试方法

提出一种使用环形振荡器对SRAM型FPGA内部延迟进行精确测试的方法。该方法利用SRAM型FPGA的可重构性在其内部构造环形振荡器,通过基准信号对分频后的振荡信号周期进行测量,从而得到环振回路中逻辑部件的延迟值。应用该方法,对一款Virtex-4型FPGA的内部延迟进行测试。结果表明:在环振初始振荡频率小于芯片工作极限频率的情况下,延迟测试的误差小于1 ps,与其他检测FPGA内部延迟故障的方法相比,检测精度有很大的提高,同时,该方法对SRAM型FPGA具有较高的普遍适用性。     

An optoelectronic CMOS memory circuit for parallel detection andstorage of optical data

A CMOS static RAM (SRAM) circuit capable of detecting and storing optically transmitted data is described. Bits of data are transferred to the memory circuit via an array of parallel light beams. A 16-b optoelectronic SRAM was fabricated in a standard bulk CMOS process and tested using argon and helium-neon lasers. Data contained in an array of 16 light beams with an average power of 3.35 μW/pixel were successfully transferred to the SRAM in parallel fashion. The storage of the optical information was verified by electronically addressing each cell. The optical data transfer technology is extended to other systems in which high speed and parallelism are essential     

An effective BIST scheme for SRAM full speed test

This article presents a novel built-in self-test (BIST) scheme at full speed test where access time test is performed. Based on normal BIST circuits, we harness an all digital phase locked loop to generate a high-frequency clock for static random access memory (SRAM) performance test at full speed. A delay chain is incorporated to achieve the four-phase clock. As inputs to SRAM, clock, address, data are generated in terms of the four-phase clock. Key performance parameters, such as access time, address setup and hold times, are measured. The test chip has been fabricated by United Microelectronics Corporation 55?nm CMOS logic standard process. According to test results, the maximum test frequency is about 1.3?GHz, and the test precision is about 35?ps at the typical process corner with supply voltage 1.0?V and temperature 25°C.     

Locally switched and limited source-body bias and other leakage reduction techniques for a low-power embedded SRAM

A low-power embedded SRAM for a large range of applications has been implemented in a standard digital 0.18-/spl mu/m process. The leakage current in the cells is reduced by using a source-body bias not exceeding the value that guaranties safe data retention, and less leaking nonminimum length transistors. Locally short-circuiting this bias, speed and noise margin loss in active mode is avoided, especially for low supply voltages. The bias is generated internally at the carefully designed equilibrium between cell, switch, and diode limiter leakages averaged over the array. The leakage of the full SRAM, including an optimized periphery, is reduced more than 20 times. Used in an industrial RF transceiver, the measurements confirm its performances.     

An array processor for general purpose digital image compression

A new VLSI processor (DIP chip) for image compression is presented which combines principles of multipipeline and array processing. The device is not specific to any one image compression algorithm and can be regarded as a general purpose processor. The chip has been implemented using a CMOS 1.0-μm process on a 14.4×13.5-mm² die. An internal clock frequency of 40 MHz results in 1.2×10⁹ operations/s on 8-bit data. Solutions to problems associated with the large bandwidth required, for both image data and instruction streams, is the main aim of the paper. The necessary problem of increasing the array clock frequency relative to the input/output clock frequency without the need for a large on-chip instruction cache or fast external clock speeds is also addressed     

A replica technique for wordline and sense control in low-powerSRAM's

With the migration toward low supply voltages in low-power SRAM designs, threshold and supply voltage fluctuations will begin to have larger impacts on the speed and power specifications of SRAM's. We present techniques based on replica circuits which minimize the effect of operating conditions' variability on the speed and power. Replica memory cells and bitlines are used to create a reference signal whose delay tracks that of the bitlines. This signal is used to generate the sense clock with minimal slack time and control wordline pulsewidths to limit bitline swings. We implemented the circuits for two variants of the technique, one using bitline capacitance ratioing in a 1.2-μm 8-kbyte SRAM, and the other using cell current ratioing in a 0.35-μm 2-kbyte SRAM. Both the RAM's were measured to operate over a wide range of supply voltages, with the latter dissipating 3.6 mW at 150 MHz at 1 V and 5.2 μW at 980 kHz at 0.4 V     

Towards an H.264/AVC HW/SW Integrated Solution: An Efficient VBSME Architecture

This paper presents an efficient real-time variable block size motion estimation architecture. The proposed architecture provides motion vectors for each 16 $times$ 16 block and its 40 sub-blocks. The proposed architecture is a single-instruction multiple-data architecture integrated with embedded SRAMs on one chip. The architecture has been prototyped using Xilinx Virtex-4 XC4VSX35-10 field-programmable gate array. It processes 30-CIF fps using 71-MHz clock frequency. Its maximum clock frequency is 187.7 MHz and the maximum throughput is 20 4CIF fps. The prototyped architecture has 175 k gates and 18 kbits embedded SRAM.      

Temperature‐Adaptive Back‐Bias Voltage Generator for an RCAT Pseudo SRAM

In order to guarantee the proper operation of a recessed channel array transistor (RCAT) pseudo SRAM, the back‐bias voltage must be changed in response to changes in temperature. Due to cell drivability and leakage current, the obtainable back‐bias range also changes with temperature. This paper presents a pseudo SRAM for mobile applications with an adaptive back‐bias voltage generator with a negative temperature dependency (NTD) using an NTD VBB detector. The proposed scheme is implemented using the Samsung 100 nm RCAT pseudo SRAM process technology. Experimental results show that the proposed VBB generator has a negative temperature dependency of ?0.85 mV/°C, and its static current consumption is found to be only 0.83 µA@2.0 V.     

A 1.71-million transistor CMOS CPU chip with a testable cachearchitecture

A 1.71-million transistor CISC CPU chip for the business computer has been developed. The chip is implemented in a 0.8-μm CMOS double-polysilicon double-metal technology. The 16.3-mm×12.7-mm device contains a 16-kilobyte cache and 192 entries TLB and operates at 40 MHz. The sustained high performance in a complexed instruction set has been realized by a large horizontal microprogram that controls two 32-b ALU's. The cache and TLB employ a 77-μm² SRAM using load resistors formed by the second polysilicon; these are accessed in one-half clock cycle and are tested at an 8 bytes per clock rate utilizing a new test strategy     

一种基于全数字锁相环的SRAM实速测试方案

提出了一种采用实速测试方式测试SRAM性能参数及可靠性的方案。该方案在内建自测试(BIST)电路的基础上,通过增加一个超高速ADPLL为SRAM性能的实速测试提供一个高频时钟,同时还加入延时链来产生不同相位的4个时钟。通过调整这4个时钟的相位来获得SRAM的关键性能参数,如存取时间、地址建立和保持时间等。该方案在UMC 55nm CMOS标准逻辑工艺下流片验证。测试结果显示,SRAM最大测试工作频率约为1.3GHz,测试精度为35ps。     

基于VLIW处理器的高性能数据通道设计及其VLSI实现

本文提出一种新的基于VLIW处理器的层次化数据通道的VLSI结构,通过独特的微码结构,十分方便地得到了具有可配置特征的高速数据通道的控制模型,模型能有效地改善系统扩展所需要的灵活性,适合构建高性能的媒体处理器阵列.运用VHDL语言实现的硬件设计通过了系统仿真.100MHz时钟频率下的最大数据吞吐率可达1.28Gbit/s.     

基于DVB-C的卷积解交织器的设计与实现

本文设计了一种基于DVB-C的卷积解交织器,利用两个静态随机存取存储器(SRAM)来实现.用一SRAM来存储解交织的数据,读写共用一个地址,由基地址和偏移地址组成.同时,用另一SRAM来存储偏移地址.结果表明,卷积解交织器能实现功能,而且减小了电路复杂度,缩小了面积.     

单片非易失性存储器DS3070W的性能特点及应用

DS3070W是Dallas公司最新推出的单片、内含实时时钟的非易失性静态存储器.该器件内部集成了16 Mb NV SRAM、非易失性控制器、实时时钟和一个锂锰(ML)可充电电池.介绍了DS3070W的性能特点及工作原理,给出了它与AT89C51的典型应用电路及子程序.     

Variability-aware 7T SRAM circuit with low leakage high data stability SLEEP mode

The design of nanoscale static random access memory (SRAM) circuits becomes increasingly challenging due to the degraded data stability, weaker write ability, increased leakage power consumption, and exacerbated process parameter variations in each new CMOS technology generation. A new asymmetrically ground-gated seven-transistor (7T) SRAM circuit is proposed for providing a low leakage high data stability SLEEP mode in this paper. With the proposed asymmetrical 7T SRAM cell, the data stability is enhanced by up to 7.03x and 2.32x during read operations and idle status, respectively, as compared to the conventional six-transistor (6T) SRAM cells in a 65 nm CMOS technology. A specialized write assist circuitry is proposed to facilitate the data transfer into the new 7T SRAM cells. The overall electrical quality of a 128-bit×64-bit memory array is enhanced by up to 74.44x and 13.72% with the proposed asymmetrical 7T SRAM cells as compared to conventional 6T and 8T SRAM cells, respectively. Furthermore, the new 7T SRAM cell displays higher data stability as compared to the conventional 6T SRAM cells and wider write voltage margin as compared to the conventional 8T SRAM cells under the influence of both die-to-die and within-die process parameter fluctuations.