Breakdown walkout in planar p-n junctions

Junction breakdown walkout in p-n junctions has been investigated in this paper. It has been shown that walkout is closely related to the avalanching in the junction. During the time the junction is subjected to the reverse breakdown, because of avalanching, hot electrons are generated in the depletion region. Some of the hot electrons have enough energy to cross the oxide-silicon barrier and to go into the conduction band of the oxide. The electrons are trapped in the traps and charge the oxide negatively, resulting in reduction of electric field intensity in the surface depletion region of the p-n junction. This results in an increase of the breakdown voltage. A theory has been developed to explain hot electron injection and trapping in the oxide and its effect on the breakdown voltage. A comparison of results predicted by theory, with the experiments has also been carried out.     

Observation of fast erase due to enhanced generation of holes caused by electron impact ionization

This letter describes an enhanced erase mechanism in flash memory cells due to impact ionization induced generation of holes. The increased population of holes is initiated by the impact ionization of electrons in the collector-base region of a parasitic bipolar transistor. Electrons injected from the emitter (drain) of a parasitic n-p-n bipolar transistor into the base (substrate) can drift to the collector (source) where the high electrical field in the collector-base space charge region causes impact ionization and carrier multiplication. The impact ionization generated holes that gain enough energy to overcome the oxide barrier can be injected into the floating gate, resulting a very fast erase.     

Surface Barrier Models of ZnO

For a low surface barrier, the energy band, barrier height and width of the space charge region at the surface of relatively large grains of ZnO are presented analytically on condition that the electron distribution obeys the Boltzmann statistics. It is shown that the temperature in the space charge distribution factor has an important effect on the energy band, barrier height and width of the space charge region. The depletion approximation is a model in which the temperature in the space charge distribution factor is zero. Our results are better than the depletion approximation.     

MOSFET degradation due to stressing of thin oxide

Oxide and interface traps in 100 Å SiO2created by Fowler-Nordheim tunneling current have been investigated using capacitor C-V, I-V, and transistor I-V measurements. The net oxide trapped charge is initially positive due to hole trapping near the anode interface and, at sufficiently high fluence, it becomes negative due to the trapping of electrons with a centroid of 60 Å from the injector (cathode) interface. Interface traps (Surface states) are created by tunneling electrons flowing to and from the substrate. The interface-trap energy distribution gives a distinct peak at 0.65 eV above the valence band edge. The positive charge trapping and interface traps generation saturate at high electron fluence, but not the electron trap generation. The generation rates for electron traps and interface traps are weak functions of tunneling current density over the range tested. The interface traps cause degradations in subthreshold current slope and surface electron mobility. The threshold-voltage shift can be either positive or negative under the combined influence of the oxide charges and the interface charges.     

Analysis of the DCIV peaks in electrically stressed pMOSFETs

This paper presents the effects of Fowler-Nordheim (FN) and hot-carrier (HC) stress in the direct-current current voltage (DCIV) measurements. The effect of interface trapped charge on DCIV curves is reported. Stress-induced oxide charge shifts the DCIV peaks, while stress-induced interface trapped charge causes a spread in the DCIV peaks. It is found that under HC stress, when the absolute value of stress gate voltage changes from low to high, the interface trap spatial location moves from the drain region to the channel region. It is inferred that the generation of oxide charge in the drain region is a two-step process. For short stress times, electrons mainly fill the process-induced neutral oxide traps, while for long stress times, electrons fill the stress created electron traps     

Tunnel emission into an insulating film with traps

The effect of space charge and traps on the current density of electrons tunnelling from a metal into the conduction band of an insulating film is calculated for the case of very low free carrier mobility in the insulator. It is shown that free carrier space charge is ineffective in lowering the tunnelling current even for extremely low free carrier mobility but that a high trap density can severely limit the tunnel current density.     

Temperature dependence of turn-on voltage of gold-doped MOSFETs

The temperature dependence of the turn-on voltage of gold-doped and control n- and p-channel MOSFETs has been measured. To account for the large positive shift of turn-on voltage, VT Au, of gold treated n- and p-channel devices, it has been proposed that the gold eliminates the fast interface traps of continuous energy distribution, and that additional acceptor states very close to the valence band can cause additional charge QA Au, which can dominate the effect of acceptor and donor levels of gold ions in the silicon surface space charge region, and can also over-compensate the surface state charge, Qss. To fit the theoretical VT Auversus T curve to experimental curves, an accumulation of electrically active gold within the surface space charge region has been considered in n-channel devices and depletion in p-channel devices.     

Experimental results on transient space charge limited currents in p-n junctions

This paper shows the first experimental evidence of transient space charge limited currents in totally depleted surface barrier p-n junctions. For this experiment surface barrier diodes excited by electrons bursts supplied by a pulsed accelerator were used.     

The effect of adsorption on the electrical properties of structures based on oxidized porous silicon

The effect of adsorption of hydrogen-sulfide and acetone polar molecules on current-voltage characteristics and time dependences of the current was studied for the 〈Pd-por-Si(O)-p⁺-Si-Al〉 structures based on oxidized porous silicon. Structures of two types were obtained—those with a Schottky barrier and those with space-charge-limited currents. The presence of a positive space charge was found near the palladium electrode; this charge defined the current-voltage characteristics in the region of V<0.2 V and varied appreciably depending on the gas used. The parameters of the layer of oxidized porous Si and the range of operating voltages corresponding to the most marked effect of a gas were determined. A maximum current variation up to 10³ times under the action of hydrogen sulfide with a concentration of ～10 ppm was obtained for the structures with the Schottky barrier with a reverse voltage close to that of reversible breakdown. The results obtained are explained by the charge exchange of traps, which is corroborated by a Fermi level shift and a Schottky barrier lowering caused by the adsorption of polar molecules.     

Charge storage by irradiation with UV light in non-biased MNOS structures

Charge storage in non-biased MNOS (Metal-Nitride-Oxide-Semiconductor) structures effected by irradiation with UV light has been investigated. The electrons generated by internal photoemission at the Si surface are trapped at the SiO₂Si₃N₄-interface and inside the Si₃N₄. The resulting charge storage in the insulator can be determined by capacitance technique. The observed positive voltage shift in C-V-characteristics depends on photon energy as well as on radiant exposure. The charge storage occurs in three stpes which can be related to various types of traps. The charged structure can partially be discharged by irradiation with light of less energy than needed for the storage process.     

The observation of negative transconductance effect caused byreal-space-transfer of electrons in metal oxide semiconductor fieldeffect transistors fabricated with Ta2O5 gatedielectric

N-channel metal oxide semiconductor field effect transistors (MOSFETs) with Ta₂O₅ gate dielectric were fabricated. An intrinsic Ta₂O₅/silicon barrier height of 0.51 eV was extracted from the gate current. The effective Ta ₂O₅/silicon barrier height including image force barrier lowering is about 0.37 eV with drain to source voltage V_DS ranging from 1.5 V to 4.0 V. Due to the low barrier height, negative transconductance effect was observed in the linear region. The decrease of drain current is due to the real space transfer of electrons from the drain terminal to the gate electrode     

Charge distributions in silicon nitride of MNOS devices

Positive charge profiles in the silicon nitride film of MNOS device are investigated in conjunction with the distributions of electron traps and injected electrons which play the most important role on the write/erase operations as a nonvolatile memory. The results are: (1) the donor-like electron traps in the form of positive charges are uniformly distributed in the nitride bulk and the density is approximately 4 × 10¹⁷ cm^?3, (2) the injected electrons are trapped deeply into the nitride, where their depth depends on the magnitude of applied voltage to the gate, (3) the motion of positive charges retained for 50 days, is also measured, resulting in the diffusion coefficient of injected electrons of 10^?20 ～ 10^?19 cm²/sec.     

Model of the behavior of MOS structures under ionizing irradiation

A quantitative model describing the behavior of MOS structures under ionizing irradiation is developed. The model is based on the capture of holes by hydrogen-containing traps. Some traps are charged and thus form a positive space charge in the insulator. The other traps decay to release positive hydrogen ions. These ions migrate in the insulator electric field to the insulator-semiconductor interface, where they depassivate surface states. The charging of surface states both under irradiation and during measurement of the threshold voltage is taken into account.     

Low-frequency excess noise in metal—Silicon Schottky barrier diodes

Theoretical models for the generation-recombination noise and trapping noise in metal-semiconductor Schottky barrier diodes are developed. Low-frequency excess noise in Schottky barrier diodes is found to be dominated by the modulation of the barrier height φB caused by fluctuation in the charge state of traps or generation-recombination centers. This noise mechanism does not occur in p-n junctions. The bias and the temperature dependence of the generation-recombination noise is critically compared with the experimental data for forward diode current ranges from 3 to 300 µA and operating temperatures from -25° to 100°C. Trapping noise in Schottky barrier diodes is observed at low temperatures in diodes not intentionally doped with deep level impurities. The experimental results on trapping noise can be described by assuming that the trap states have a constant capture cross section and are uniformly distributed in space, as well as in energy. The surface potential at the diode periphery also has an important effect on the Schottky barrier diode noise. The best low-frequency noise behavior is found when the surface is at the flat-band condition. An accumulated surface is always associated with a large amount of low-frequency excess noise.     

Bipotential cathodes for reduction of grid current

The useful operating range of triodes may be extended into the positive-grid region by preventing electrons from reaching the grid. To do so, electron emission must be suppressed from the cathode area under the grid, and the emission that does take place must be guided through the grid openings. Both of these requirements are met by the use of passive-base emitting areas and by clean metal nonemitting areas of high work function. Calculation of electron trajectories in the absence of space charge shows that the two potentials on the cathode surface provide transverse fields which focus the electrons between the grid wires. For best focusing, there is an optimum height of the nonemitting stripe relative to the emitting surface. Measurements on large scale models of planar triodes show that these results can be achieved with the use of appropriate materials. Striking reductions in electron current to the positive grid are obtained with titanium or platinum nonemitting stripes. Pinhole camera studies of the current distribution and transverse velocities at the anode plane reveal the nature of the focusing action and conditions in the grid plane. Additional benefits of this construction are reduction of transverse velocity spread and more uniform electron transit times. Bipotential cathodes have been incorporated in practical size metal-ceramic triodes with the expected improvements in performance.     

Theory of dynamic charge current and capacitance characteristics in MIS systems containing distributed surface traps

Theoretical studies have been made on the dynamic characteristics of the metal-insulator-semiconductor (MIS) capacitor containing distributed surface traps. It has been shown that when the surface traps are in dynamic equilibrium with the voltage ramp, the device exhibits steady-state charge, current and capacitance characteristics. When the surface traps are out of equilibrium with the voltage ramp, then the emission of trapped charge is a function of time only and not of voltage. Under such conditions, the characteristics are considered to be non-steady-state in nature.In the steady state, the emission of electrons from a continuum of surface traps accounts for the reduction in the slopes of the C–V curves from the ideal ones. Kinks are manifested when the traps just empty the last of their electrons.In the non-steady state, electron emission can be described by the non-steady-state (time-dependent) occupancy function derived herein, which is shown to be similar in shape to the Fermi function. This means that electron emission takes place from a narrow band of energy positioned near the uppermost-filled traps. Hysteresis effects are manifested in the C–V characteristics due to the non-steady-state emission of trapped charge. At the transition from the steady state to the non-steady state and vice versa, kinks are exhibited in the charge and capacitance characteristics, while step changes in current components are also predicted.The physical processes involved have been stressed and closed-form expressions have been obtained for the charge, current and capacitance in terms of the trapping parameters, sweep-rate and temperature.     

Trapping,emission and generation in MNOS memory devices

This study is concerned with trapping phenomena occuring at the semiconductor-oxide interface and in the nitride layer of variable-threshold metal-nitride-oxide-semiconductor (MNOS) memory devices. The technique consits of biasing the device in such a manner as to charge or discharge either the interface traps or the nitride traps, or both sets of traps simultaneously. The device is then cooled to low temperature with the bias still applied, and at the low temperature the biasing condition is changed, in order to induce the device into a non-steady mode that is quasi-stable at the low temperature. The temperature of the device is then raised at a constant rate, and the resulting current vs temperature (I-T) characteristics is found to be rich in structure. By means of a series of systematic experiments the various portions of the I-T characteristic are identified with emission of electrons from interface states and the nitride traps, and surface generation. From this data the energy distribution of interface states is determied. It is shown that the memory charge in the nitride is distributed throughout the nitride, and temporary memory charge and semi-permanent memory charge are distinguished.     

Bipolar charge transport in organic field-effect transistors: Enabling high mobilities and transport of photo-generated charge carriers by a molecular passivation layer

High mobility bipolar charge carrier transport in organic field-effect transistors (OFETs) can be enabled by a molecular passivation layer and selective electrode materials. Using tetratetracontane as passivation layer bipolar transport was realised in the organic semiconductors copper-phthalocyanine, diindenoperylene, pentacene, TIPS-pentacene and sexithiophene and mobilities of up to 0.1 cm²/V s were achieved for both electrons and holes. Furthermore, the trap and injection behaviour was analysed leading to a more general understanding of the transport levels of the used molecular semiconductors and their limitations for electron and hole transport in OFETs. With this knowledge the transistor operation can be further improved by applying two different electrode materials and a light-emitting transistor was demonstrated.Additionally, the effect of illumination on organic field-effect transistors was investigated for unipolar and bipolar devices. We find that the behaviour of photo-excited electrons and holes depends on the interface between the insulator and the semiconductor and the choice of contact materials. Whereas filling of electron traps by photo-generated charges and the related accumulation field are the reason for changes in charge carrier transport upon illumination without passivation layer, both types of charge carriers can be transported also in unipolar OFETs, if a passivation layer is present.     

钝化与场板结构对AlGaN/GaN HEMT电流崩塌的影响

由于AlGaN／GaNHEMT的几何结构以及很强的极化效应,栅漏区域的电场很大,以至于电子可以从栅隧穿到AlGaN表面．隧穿的电子在表面累积,导致栅下耗尽区的电子向漏端延伸,从而引起漏极电流的下降．文中采用应力测试方法,研究了未钝化、钝化以及场板三种结构的AlGaN／GaNHEMT的电流崩塌程度．实验结果表明,钝化隔断了电子从栅隧穿到AlGaN表面的通道,场板结构能够有效降低栅边缘电场,均减少了电子从栅隧穿到表面陷阱的几率,从而使虚栅的作用减弱,有效地抑制了电流崩塌效应．     

Photoelectric spectroscopy of InAs/GaAs quantum dot heterostructures in a semiconductor/electrolyte system

The photovoltaic effect in the semiconductor/electrolyte junction is an effective method for investigation of the energy spectrum of InAs/GaAs heterostructures with self-assembled quantum dots. An important advantage of this method is its high sensitivity. This makes it possible to obtain photoelectric spectra from quantum dots with high barriers for the electron and hole emission from quantum dots into the matrix even if the surface density of the dots is low (～10⁹ cm^?2). In a strong transverse electric field, broadening of the lines of optical transitions and emission of electrons and holes from quantum dots into the matrix directly from the excited states are observed. The effect of the photovoltage sign reversal was detected for a sufficiently high positive bias across the barrier within the semiconductor. This effect is related to the formation of a positive charge at the interface between the cap layer and electrolyte and of the negative charge on impurities and defects in the quantum dot layer.