A hybrid digital/RF envelope predistortion linearization system for power amplifiers

This paper presents an adaptive wide-band digitally controlled RF envelope predistortion linearization system for power amplifiers (PAs). A field-programmable gate-array-based lookup table is indexed by a digitized envelope power signal, and instantaneously adjusts the input signal amplitude and phase via an RF vector modulator to compensate for the AM-AM and AM-PM distortion. The advantages of this predistortion architecture over conventional baseband digital approaches are that a 20%-33% wider correction bandwidth is achievable at the same clock speeds, and linearization can be performed without the need for a digital baseband input signal. The timing match between the input RF signal and predistorting signal, which is one of the critical factors for performance, was investigated and adjusted to obtain optimum performance. Using three-carrier cdmaOne and wide-band multitone signals, the linearization performances for a 0.5-W GaAs heterostructure field-effect transistor, a 90-W peak-envelope-power (PEP) silicon LDMOS PA, and a 680-W PEP LDMOS PA were examined. In addition, the predistortion performance variation for different signals was studied in terms of signal envelope statistics, output powers, and PA power capacities.     

Neural-network-based adaptive baseband predistortion method for RF power amplifiers

An adaptive baseband predistortion method for RF power amplifier (PA) linearization is proposed and experimentally demonstrated. The predistortion component is implemented by a single-input dual-output multilayer perceptron (MLP). Both amplitude-to-amplitude and amplitude-to-phase distortion products are compensated by backpropagation training of the neural network including the response of the PA. Effects of modulator and demodulator imperfections on system performance are examined. Measurements on a system prototype reveal a significant linearity improvement that reaches 25 dB.     

An Approximation of Volterra Series Using Delay Envelopes, Applied to Digital Predistortion of RF Power Amplifiers With Memory Effects

In this letter, a new model for digital predistortion (DPD) of radio frequency power amplifiers for wide-band applications is proposed. The model is based on a spline approximation of Volterra series by considering second-order cross-terms. The advantage of the spline cross-term model is a reduction in the number of model parameters. We further reduce the model order by operating on delayed envelope samples, rather than the complex baseband samples. A block of wide-band code-division multiple access signal is sent through a 90 W class-AB power amplifier, based on the freescale LDMOS output device, and the input/output baseband samples were used to identify the DPD parameters.     

基于数/模混合预失真技术的功放线性化北大核心CSCD

随着移动通信信号带宽的增加,传统功率放大器数字预失真线性化技术越来越受到采样率的限制。为了使线性化效果更好,文中提出了一种数字预失真和模拟预失真相结合的混合预失真器,利用模拟预失真宽带宽的特点和数字预失真线性化能力强的优势,把模拟预失真和数字预失真融合在一起,共同补偿功放的非线性。由于受实验设备采样率的限制,文中采用了带宽为60 MHz的5 G NR信号对一个中心频率为3.5 GHz的射频功放进行实验验证。实验结果表明:提出的混合预失真器不仅优于单独的数字预失真器和模拟预失真器的非线性矫正性能,而且还能改善数字预失真因采样率限制无法改善的带外互调失真。     

Quantifying memory effects in RF power amplifiers

This paper proposes a system-level behavioral model for RF power amplifiers (PAs), which exhibit memory effects, that is based on the parallel Wiener system. The model extraction is performed using two-tone intermodulation distortion (IMD) measurements with different tone frequency spacings and power levels. It is found that by using such a model, more accurate adjacent-channel power-ratio levels may be predicted for high PAS close to the carrier frequency. This is validated using IS-95B CDMA signals on a low-power (0.5 W) class-AB PA, and on a high-power (45 W) class-B PA. The model also provides a means to quantify memory effects in terms of a figure-of-merit that calculates the relative contribution to the IMD of the memoryless and memory portion of the PA nonlinearity. This figure-of-merit is useful in providing an estimate of the amount of correction that a memoryless predistortion system may have on PAS that exhibit memory effects.     

A least-squares/Newton method for digital predistortion of wideband signals

Power amplifiers (PAs) are essential in communication systems, but are inherently nonlinear. To achieve linearity with good efficiency, PA linearization is necessary. Digital baseband predistortion is a highly cost-effective way to linearize PAs, but most existing architectures assume that the PA has a memoryless nonlinearity. For wider bandwidth applications, such as wideband code-division multiple access, PA memory effects can no longer be ignored. Therefore, in order to achieve good linearization performance, the predistorter needs to also have memory structure. In this paper, we propose a new model for the wideband predistorter and a least-squares(LS)/Newton algorithm to estimate the model parameters. Performance of the LS/Newton algorithm is studied through computer simulations. Good linearization performance is achieved by using the new model in an experimental testbed.     

Thermal memory effects modeling and compensation in RF power amplifiers and predistortion linearizers

Memory effects, which influence the performance of RF power amplifiers (PAs) and predistortion-based linearizers, become more significant and critical in designing these circuits as the modulation signal bandwidth and operation power increase. This paper reports on an attempt to investigate, model, and quantify the contributions of the electrical nonlinearity effects and the thermal memory effects to a PA's distortion generation, as well as how to compensate for these effects in designing baseband predistortion schemes. The first part of this paper reports on the development of an accurate dynamic expression of the instantaneous junction temperature as a function of the instantaneous dissipated power. This expression has been used in the construction of an electrothermal model for the PA. Parameters for the new proposed behavior model were determined from the PA measurements obtained under different excitation conditions (e.g., small-signal and pulsed RF tests). This study led us to conclude that the effects of the transistor self-heating phenomenon are more important under narrow-band signal (e.g., enhanced data for global evolution of global system for mobile communications) than for signals with wide modulation bandwidth (CDMA2000, Universal Mobile Telecommunications System). In the second part of this paper, the newly developed model has also been used to design a temperature-compensated predistortion function to compensate for these effects. The linearized PA output spectrum and error vector magnitude show a significant performance improvement in the temperature-compensated predistortion function over a memoryless predistortion. The results of these measurements that have been conducted on a 90-W peak lateral double-diffused metal-oxide-semiconductor PA are in agreement with those obtained from simulations using the developed PA and the predistorter models implemented in an ADS environment.     

卫星通信中的数字基带预失真技术研究

数字基带预失真技术是克服高功率放大器非线性失真最有效的方法之一。早期对预失真技术的研究大多局限与无记忆非线性，但对于宽带和多载波应用。记忆非线性失真将不能再被忽略，无记忆预失真非线性补偿机制可能失效。文中研究了卫星通信系统中大功率记忆非线性功放的自适应基带预失真线性化技术，提出了一种基于记忆多项式的非直接学习结构的自适应基带预失真方案，给出了自适应算法。仿真结果表明，该方案能有效抑制带外频谱扩散，减小带内失真，降低误比特率，实现有记忆非线性大功率放大器的自适应预失真。     

Adaptive digital/RF predistortion using a nonuniform LUT indexing function with built-in dependence on the amplifier nonlinearity

This paper reports on an integrated adaptive digital/RF predistorter using a nonuniform spaced lookup table (LUT) and in-phase/quadrature (I/Q) RF vector multiplier (VM). The LUT contents are directly deduced from the baseband input and output signals of the power amplifier (PA). In addition, a new nonlinear indexing function of the predistortion LUT with built-in dependence on the PA nonlinearity is proposed. This function is made to be robust to the input signal statistics. A comparison of this new indexation method with conventional approaches, namely, power and logarithmic power indexation functions, is carried out. The superiority of the proposed scheme is demonstrated in particular for class-AB amplifiers where the gain of the PA varies over the whole input range of the drive signal. The measured output spectrum of a linearized 90-W peak lateral double-diffused metal-oxide-semiconductor PA reveals a significant reduction of the power emission at the adjacent channels of approximately 15 dB under IS95, single-carrier, and multicarrier wide-band code-division multiple-access signals. The experimental evaluation is carried out using an RF/digital predistorter prototype that mainly includes an envelope detector, a linear I/Q RF VM, field-programmable gate array and digital signal processor, and fast analog/digital and digital/analog converters.     

Theoretical and experimental study of amplifier linearization basedon harmonic and baseband signal injection technique

This paper presents a novel linearization scheme for RF amplifiers based on simultaneous harmonic and baseband signal injection. In this method, second-order frequency components generated by predistortion circuits are fed to the input of the main amplifier to mix with the fundamental signal for third-order intermodulation distortion (IMD) cancellation. A general and rigorous analytical formulation of baseband, harmonic, and the proposed injection techniques is presented, and from these derived expressions, the optimum conditions for IMD suppression are developed. The result also reveals the practical limitation of the proposed method subject to gain and phase error associated with the RF and baseband circuitry. For comparison purposes, an amplifying system is constructed for the experimental investigation of second-order signal injection approach. Both two-tone and digitally modulated waveforms are employed in these measurements     

Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model

In this paper, the intermodulation distortion (IMD) behavior of LDMOS transistors is treated. First, an analysis is performed to explain measured IMD characteristics in different classes of operation. It is shown that the turn-on region plays an important role in explaining measured IMD behavior, which may also give a clue to the excellent linearity of LDMOS transistors. Thereafter, with this knowledge, a new empirical large-signal model with improved capability of predicting IMD in LDMOS amplifiers is presented. The model is verified against various measurements at low as well as high frequency in a class-AB power amplifier circuit.     

A Comprehensive Analysis of AM–AM and AM–PM Conversion in an LDMOS RF Power Amplifier

In this paper, a Volterra analysis built on top of a normal harmonic balance simulation is used for a comprehensive analysis of the causes of AM–PM distortion in a LDMOS RF power amplifier (PA). The analysis shows that any nonlinear capacitors cause AM–PM. In addition, varying terminal impedances may pull the matching impedances and cause phase shift. The AM–PM is also affected by the distortion that is mixed down from the second harmonic. As a sample circuit, an internally matched 30-W LDMOS RF PA is used and the results are compared to measured AM–AM, AM–PM and large-signal $S11$.      

RLS算法在基带预失真系统中的应用

传统的最小二乘(LS)类预失真算法运算量大,且不能跟踪功放的变化特性.推导了基于递归最小二乘(RLS)算法和间接学习型结构的自适应基带预失真算法,并仿真和分析了算法的性能,结果显示该算法与传统的LS类预失真算法对系统功放非线性改善的效果相当.为了进一步验证算法的有效性,设计和构建了具有预失真功能的短波发射系统.硬件测试...     

射频功放记忆效应的准确辨识和定量计算

手段.     

A robust digital baseband predistorter constructed using memory polynomials

Power amplifiers (PAs) are inherently nonlinear devices and are used in virtually all communications systems. Digital baseband predistortion is a highly cost-effective way to linearize PAs, but most existing architectures assume that the PA has a memoryless nonlinearity. For wider bandwidth applications such as wideband code-division multiple access (WCDMA) or wideband orthogonal frequency-division multiplexing (W-OFDM), PA memory effects can no longer be ignored, and memoryless predistortion has limited effectiveness. In this paper, instead of focusing on a particular PA model and building a corresponding predistorter, we focus directly on the predistorter structure. In particular, we propose a memory polynomial model for the predistorter and implement it using an indirect learning architecture. Linearization performance is demonstrated on a three-carrier WCDMA signal.     

一种用于射频功率放大器的新型预失真器的设计

预失真技术是功率放大器线性化的主要技术之一。分析了传统预失真器不能消除其输出端所产生双音基频分量的特点,提出一种新的预失真器,并利用它改善射频功率放大器的非线性失真。仿真结果表明,该方法可以明显改善射频功率放大器的三阶交调非线性失真。     

A new approach to amplifier linearization by the generalized baseband signal injection method

The authors present a new technique for the reduction of third-order intermodulation distortion (IMD) in microwave amplifiers. A baseband predistortion signal is injected into a diode circuitry and the main amplifier to mix with the fundamental to generate a canceling signal for the suppression of the inherent IMD component. The proposed method can achieve higher linearity performance, in comparison to the conventional difference-frequency approach, and unlike many other techniques, no RF circuitry, such as variable gain amplifiers and phase-shifters, is needed other than baseband amplifiers. Both two-tone and vector signal measurement results are included.     

A Generalized Memory Polynomial Model for Digital Predistortion of RF Power Amplifiers

Conventional radio-frequency (RF) power amplifiers operating with wideband signals, such as wideband code-division multiple access (WCDMA) in the Universal Mobile Telecommunications System (UMTS) must be backed off considerably from their peak power level in order to control out-of-band spurious emissions, also known as “spectral regrowth.” Adapting these amplifiers to wideband operation therefore entails larger size and higher cost than would otherwise be required for the same power output. An alternative solution, which is gaining widespread popularity, is to employ digital baseband predistortion ahead of the amplifier to compensate for the nonlinearity effects, hence allowing it to run closer to its maximum output power while maintaining low spectral regrowth. Recent improvements to the technique have included memory effects in the predistortion model, which are essential as the bandwidth increases. In this paper, we relate the general Volterra representation to the classical Wiener, Hammerstein, Wiener–Hammerstein, and parallel Wiener structures, and go on to describe some state-of-the-art predistortion models based on memory polynomials. We then propose a new generalized memory polynomial that achieves the best performance to date, as demonstrated herein with experimental results obtained from a testbed using an actual 30-W, 2-GHz power amplifier.     

Joint Polynomial and Look-Up-Table Predistortion Power Amplifier Linearization

Digital predistortion at baseband is an efficient and low-cost method for the linearization of a power amplifier (PA) in a wireless system employing a nonconstant-envelop modulation scheme, so as to reduce the adjacent channel interference. The polynomial and the look-up table (LUT) predistortion schemes are two commonly used approaches. However, in each of the two approaches, to reach a satisfactory adjacent channel power ratio (ACPR) in the PA output signal, people usually end up with a complex system having the involved algorithms converge rather slowly. In this brief, we propose a low-complexity joint-polynomial-and-LUT predistortion PA linearizer, where the two mutually dependent predistortion schemes can skillfully help each other. Simulation results show that the proposed joint linearizer can reduce the algorithm convergence time while achieving an excellent ACPR.     

Baseband derived RF digital predistortion

A unique baseband derived RF predistortion system which uses lookup table coefficients extracted at baseband that directly RF envelope modulate a quadrature vector modulator is presented. The primary advantages of this architecture are that it combines the narrowband advantage of envelope predistortion with the accuracy of baseband predistortion.