共查询到19条相似文献,搜索用时 109 毫秒
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介绍了多晶硅发射极双台面SiGe/Si异质结双极晶体管制作工艺流程。通过对LPCVD在n型Si衬底上外延生长SiGe合金层作为异质结双极晶体管基区、自中止腐蚀工艺制作发射区台面、多晶硅n型杂质掺杂工艺制作发射极、PtSi金属硅化物制作器件欧姆接触等工艺技术进行研究,探索出关键工艺的控制方法,并对采用以上工艺技术制作的多晶硅发射极双台面SiGe/Si异质结双极晶体管进行了I-V特性及频率特性测试。结果显示该器件饱和压降小,欧姆接触良好,直流电流放大倍数β随Ic变化不大,截止频率最高达到11.2 GHz。 相似文献
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《固体电子学研究与进展》1991,(3)
<正>据日本《电子材料》1990年第6期报道,美国IBM公司已研制成最高工作频率为75GHz硅和锗合金的双极晶体管,其速度比通常硅双极晶体管快两倍.异质结双极晶体管(HBT)采用IBM公司发明SiGe合金的 UHV(Ultra-High-Vacuum)CVD法中沉积工艺来制作.该工艺比现在的生长工艺温度低.据IBM公司报道,SiGe HBT的功能早在1987年已确定.1989年SiGe晶体管的工作频率为40GHz. 相似文献
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针对IMEC 0.13μm准自对准SiGe BiCMOS工艺制成的基区Ge组分二阶分布结构SiGe异质结双极晶体管,在25~125℃温度范围内,对其进行了包括Early电压,Gummel图形等在内的完整双极晶体管特性曲线测量,提取了该器件在25~125℃范围内的温度可变Mextram 504模型参数.在此基础上,为Mextram 504模型对0.13μm基区Ge组分二阶分布SiGe异质结双极晶体管探索了完整的模型提取方案.提出了对Mextram 504模型温度参数提取方法的改进,优化了提取流程.对SiGe异质结双极晶体管雪崩电流受温度影响的特性进行了讨论,为Mextram模型提出了雪崩外延层的有效厚度的温度变化经验公式和新的雪崩电流温度变化参数,提高了Mextram模型对不同温度下SiGe双极型晶体管进行模拟仿真的精确度. 相似文献
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针对IMEC0.13μm准自对准SiGe BiCMOS工艺制成的基区Ge组分二阶分布结构SiGe异质结双极晶体管,在25~125℃温度范围内,对其进行了包括Early电压,Gummel图形等在内的完整双极晶体管特性曲线测量,提取了该器件在25~125℃范围内的温度可变Mextram 504模型参数.在此基础上,为Mextram 504模型对0.13μm基区Ge组分二阶分布SiGe异质结双极晶体管探索了完整的模型提取方案.提出了对Mextram 504模型温度参数提取方法的改进,优化了提取流程.对SiGe异质结双极晶体管雪崩电流受温度影响的特性进行了讨论,为Mextram模型提出了雪崩外延层的有效厚度的温度变化经验公式和新的雪崩电流温度变化参数,提高了Mextram模型对不同温度下SiGe双极型晶体管进行模拟仿真的精确度. 相似文献
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微波大功率SiGe HBT的研究进展及其应用 总被引:5,自引:5,他引:0
文章论述了SiGe异质结双极晶体管(HBT)在微波功率领域应用的优势,详细介绍了微波功率SiGe HBT的结构设计方法,以及主要影响器件性能的材料和结构因素,评述了其最新进展及今后发展方向. 相似文献
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硼的瞬时增强扩散(TED)所造成的外扩散将对双极晶体管的性能产生不利影响。在HBT的SiGe区加入C(<1020cm-3),能够抑制掺杂硼的外扩散。文章讨论了C掺杂的SiGe∶CHBT在性能和工艺上的优势。SiGe∶C HBT的静态参数优于普通SiGe HBT。同时,由于SiGe∶C HBT允许高浓度的硼存在于很薄的SiGe基区层,甚至在外延后经注入和退火仍可保持很高浓度的硼掺杂,所以,SiGe∶C HBT的高频特性有很大的提高。 相似文献
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八十年代后期发展起来的硅-锗异质结构材料,得益于成熟的硅技术,正在取得令人鼓舞的成果。采用应变层外延技术,已经获得高质量的Ge_xSi_(1-x)/Si异质膜。这些材料已被应用于各种半导体器件的研究之中。异质结双极晶体管是硅-锗异质结构材料的一个典型应用领域。近期研究结果显示出硅-锗异质结双极晶体管(HBT)巨大的潜在优势和在超高频、超高速及低温应用领域的美好前景。本文考察了这种被称为第二代硅的新材料的生长技术及其在异质结双极晶体管中的应用,并简要介绍了国外在硅锗HBT研究方面的一些成果,展望了这种新型器件的发展前景。 相似文献
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The characteristics of parameters such as carrier temperature and diffusion coefficient in ultra-thin-base SiGe heterojunction bipolar transistors (HBTs) are analysed according to the solution of the Boltzmann equation; a new model of base transport in SiGe HBTs, different from traditional ones is described. 相似文献
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Tianbing Chen Wei-Min Lance Kuo Enhai Zhao Qingqing Liang Zhenrong Jin Cressler J.D. Joseph A.J. 《Electron Devices, IEEE Transactions on》2004,51(11):1825-1832
A comprehensive investigation of the high-temperature characteristics of advanced SiGe heterojunction bipolar transistors (HBTs) is presented, and demonstrates that, contrary to popular opinion, SiGe HBTs are potentially well-suited for many electronics applications operating at temperatures as high as 300/spl deg/C. 相似文献
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Le Tron B. Hashim M.D.R. Ashburn P. Mouis M. Chantre A. Vincent G. 《Electron Devices, IEEE Transactions on》1997,44(5):715-722
This paper describes a method for characterizing the bandgap narrowing and parasitic energy barrier in SiGe heterojunction bipolar transistors (HBTs), fabricated using a single-polysilicon self-aligned bipolar process. From a comprehensive study of the temperature dependence of the collector current, the bandgap narrowing in the base due to germanium has been dissociated from that due to the heavy dopant concentration. The same approach has been used to characterize the height and width of parasitic energy barriers which appear when boron out-diffusion from the SiGe base is present. The method has been applied to SiGe heterojunction bipolar transistors fabricated using a single polysilicon, self-aligned, bipolar process, as well as mesa transistors. The experimental results show that small geometry transistors have degraded collector currents due to boron out-diffusion around the perimeter of the emitter. This behavior has been explained by accelerated boron diffusion due to point defects generated during the extrinsic base implant. The values of undoped SiGe spacer thickness needed to suppress the parasitic energy barrier are described. Finally, high-frequency results are reported, which correlate the frequency transition to these parasitic energy barriers 相似文献
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This paper reviews progress in SiGe heterojunction bipolar technology, with particular emphasis on the influence of materials issues on the technology performance. Low-temperature epitaxy and transient enhanced diffusion are identified as the main materials issues. Three epitaxy approaches are described, namely differential epitaxy, selective epitaxy, and combined selective and non-selective epitaxy. Differential epitaxy has the advantage of a simple growth process, selective epitaxy the advantage that an extrinsic base implant is not needed, and combined expitaxy the advantage that the Si collector and SiGe base can be grown in a single step. Transient enhanced diffusion of the boron in the base is shown to be a constraint on transistor performance, and the incorporation of a carbon concentration of ≈1×1020 cm−3 in the base is shown to ease this constraint. Preliminary results on SiGe HBTs on wafer bonded SOI substrates are reported. The SOI transistors have characteristics comparable to those of bulk transistors, but the advantage of a gain that is a factor of approximately two higher. 相似文献
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This paper presents the hot carrier (HC) induced performance degradation in a 10 GHz voltage controlled oscillator (VCO) with SiGe heterojunction bipolar transistors (HBTs). SiGe device characteristics due to HC stress are examined experimentally. The vertical bipolar inter-company (VBIC) model parameters extracted from measured data are used in Cadence SpectreRF simulation to verify the HC effect on the VCO. The VCO shows significant vulnerability to hot carriers. 相似文献
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Joseph A.J. Cressler J.D. Richey D.M. Jaeger R.C. Harame D.L. 《Electron Devices, IEEE Transactions on》1997,44(3):404-413
We present the first comprehensive investigation of neutral base recombination (NBR) in ultra-high vacuum/chemical vapor deposited (UHV/CVD) SiGe heterojunction bipolar transistors (HBT's), and its influence on the temperature characteristics of Early voltage (VA ) and current gain-Early voltage product (βVA). We show that a direct consequence of NBR in SiGe HBT's is the degradation of VA when transistors are operated with constant-current input (forced-IB) as opposed to a constant-voltage input (forced-VBE). In addition, experimental and theoretical evidence indicates that with cooling, VA in SiGe HBT's degrades faster than in Si bipolar junction transistors (BJT's) for forced-IB mode of operation. Under the forced-VBE mode of operation, however, SiGe HBT's exhibit a thermally-activated behavior for both VA and βVA, in agreement with the first-order theory. The differences in VA as a function of the input bias and temperature for SiGe HBT's are accurately modeled using a modified version of SPICE. The performance of various practical SiGe HBT circuits as a function of temperature, in the presence of NBR, is analyzed using this calibrated SPICE model 相似文献
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M. Ulln S. Díez M. Lozano G. Pellegrini D. Knoll B. Heinemann 《Solid-state electronics》2011,56(1):179-184
SiGe BiCMOS technologies are one of the proposed options for the front-end readout electronics of the detectors in the middle region of the ATLAS-Upgrade. The radiation hardness of the SiGe bipolar transistors is being assessed for this application through irradiations with different particles. Biasing conditions during irradiation experiments of bipolar transistors or circuits have an influence on the damage and there is a risk of erroneous results. We have performed several irradiation experiments of SiGe devices in different bias conditions. We have observed a systematic trend in gamma irradiations, showing a smaller damage in transistors irradiated biased compared to those irradiated with shorted or floating terminals. These effects have not been observed in neutron irradiations. 相似文献