弱磁场中向列相液晶TEB30A薄膜自衍射现象研究

采用1.5 mW低功率的He-Ne激光(632.8 nm)正入射向列相液晶TEB30A薄膜,研究向列相液晶TEB30A薄膜在不同强度的弱磁场(0、0.4649、0.5062和0.5185 T)中的远场衍射特性。实验结果表明,向列相液晶TEB30A薄膜在4种不同强度的弱磁场(0,0.4649,0.5062和0.5185 T)中都能产生远场衍射。衍射图样会随磁场强度的增加而发生明显的变化。衍射环的数目增加,衍射环宽度变宽,衍射场向外拓展。当磁场强度为0.5062 T时,衍射环上出现了近似相互平行的干涉直条纹。当磁场强度达到0.5185 T时,干涉直条纹更加明显的趋于平行。在弱磁场的作用下,激光束在远场的散度变得明显。基于Kirchhoff-Fraunhofer衍射积分原理的理论模拟结果表明,当激光通过处在弱磁场中的向列相液晶TEB30A薄膜时,横向非线性相移会增大。随着弱磁场强度由0 T增加到0.5185 T,非线性相移也由4 π增加到20 π。弱磁场引起样品非线性相移增大,导致其远场衍射图样发生了变化。远场衍射光强图样的变化也是透射光能量分布的改变,因此,可将弱磁场调控向列相液晶这一技术应用于磁控光开关及光限幅等领域。     

高空间频率向列相液晶二进制光栅

研究了向列相液晶在空间变化电场作用下的电光特性。模拟了向列相液晶相位光栅的旨向矢分布。随着光栅空间频率的增加条纹电场变得很重要，而且衍射方式也发生了变化。分析了光栅的光学性能并进行了实际测量。     

单体平均官能度对制备液晶/聚合物光栅的影响

液晶／聚合物光栅，即全息聚合物分散液晶光栅(Holographic polymer dispersed liquid crystal，HPDLC)是一种新型光电子信息功能器件。采用紫外光固化丙烯酸脂和向列相液晶TEB30A制备了透射HPDLC型光栅，探讨了单体平均官能度对液晶／聚合物光栅的影响。实验将官能度分别为2．0和5．0的两种单体混合。使平均官能度在2．0～5．0变化，制备出系列HPDLC透射型光栅，通过观察光栅形貌、测量光栅的衍射效率及驱动电压，分析了相分离过程中的光聚合速度和液晶扩散速度的匹配问题。     

全息光栅的可擦除存储性能研究

本文制备了高衍射效率的全息光栅,并对其进行了图像的可擦除存储性能研究。选用五官能度的二季戊四醇羟基五丙烯酸酯、二官能度的邻苯二甲酸二甘醇二丙烯酸酯以及向列相液晶TEB30A作为存储材料,将其置于全息干涉场中记录图像;采用He-Ne激光器实现图像的再现,并通过对全息光栅施加电场来改变光栅内液晶分子的取向,降低光栅的折射率调制度,从而使图像消失;最终得到了衍射效率为85.6%的全息光栅,通过He-Ne激光器实现了图像的再现,并在外加电场为50V时使图像基本消失,实现了图像的可擦除存储功能。     

液晶衍射光栅的理论分析

在液晶指向矢计算的基础上,得到了向列相液晶在电场下折射率分布和相位延迟。并在矩形光栅和正弦相位光栅的基础上,分析了液晶衍射光栅对入射光一级衍射情况及其衍射效率,得到了15°左右的衍射角,且衍射效率达到40%。     

偶氮苯聚合物掺杂液晶光栅的研究

将偶氮苯聚合物和向列相液晶以一定比例混合后注入液晶盒,用线性偏振光进行掩膜光照,引发偶氮苯聚合物发生顺反异构,诱导液晶产生光双折射现象,形成偶氮苯聚合物掺杂液晶光栅,样品通过光学显微镜和He-Ne激光器的检测,结果表明该光栅具有清晰的光栅结构,衍射效率高并具有电场可调谐性,更为重要的是驱动电压大幅降低,可与集成电路匹配。     

向列相液晶激光器件侧面辐射谱研究

研究了向列相液晶激光器件侧面激光辐射谱,并深入分析了激光辐射机制。分别制备了传统液晶盒和引入SU-8光栅结构的两种器件,并注入向列相液晶TEB30A和激光染料PM597的混合物。利用Nd:YAG固体脉冲激光器倍频出的532 nm激光作为泵浦源正面入射器件,侧面探测激光辐射谱。在传统液晶盒器件侧面,测得575～600 nm范围的随机激光辐射谱。而具有周期100μm和8μm的SU-8光栅结构器件侧面,获得了多波长激光辐射谱。随着泵浦能量增大,最高强度激光辐射峰波长位置出现在583～585 nm和588～592 nm附近,FWHM约0.3 nm。基于光波导理论结合器件结构分析得出,在传统液晶盒中引入SU-8光栅结构增强了液晶器件的光波导效应,是获得多波长激光辐射谱的主要原因。     

向列相液晶的Freedericksz转变的讨论

本文从向列相液晶的Frank弹性理论出发,应用条件极值的变分方法讨论了恒磁场作用下向列相液晶Freederickxz转变。在外磁场影响下的形变向列相液晶是各向异性非均匀介质,液晶内部会出现不均匀的感应磁场,它甚至出现在垂直于外磁场的方向,从而又影响液晶形变分布。结论表明,Freederickxz转变的阀值和形变分布不仅与磁导率各向异性有关,而且与该张量的主轴分景有关。     

非均匀分布的纳米银掺杂的聚合物分散液晶全息光栅等效电路建模

聚合物分散液晶全息光栅具有电场可调的特点,材料中掺杂纳米银颗粒,能够有效降低光栅的驱动电压.由于聚合动力学的影响,会造成纳米银颗粒在光栅中的非均匀分布,即纳米银在聚合物和液晶区分布含量不均匀,表现出不同的电场调控特性.通过等效电路建模的方法研究驱动电压阈值与所施加交流电场的频率之间的关系.根据Maxwell-Wagner效应建立纳米银分别被液晶和聚合物包围的等效电路模型,具体研究在液晶条纹中,纳米银含量占总纳米银比例不同的条件下,纳米银掺杂的聚合物分散液晶全息光栅的介电弛豫时间和弛豫振荡的频率数值变化,进一步调节驱动电场频率,获得更低的驱动电压阈值.通过最优驱动电场频率范围来初步确定纳米银在光栅中的分布结构,并证明纳米银颗粒集中在液晶条纹,少量分布在聚合物条纹中.     

交联剂对聚合物/液晶光栅的影响

利用激光干涉条纹引发预聚物／液晶混合物相分离．形成液晶与聚合物周期交替排列的液晶光栅。研究了组成材料中交联剂N-乙烯基吡咯烷酮（1-vinyl-2-pyrrolidone，NVP）对光栅形貌和衍射效率的影响，通过改变NVP的含量，分析NVP在光栅形成中的作用，确立了NVP的最佳含量。实验结果表明，NVP具有调节混合物系统官能度与体系黏度、交联密度及影响反应速度的作用，在适量的NVP含量下，光栅的衍射效率得到优化。     

Performance Improvement of $hbox{Sm}_{2}hbox{O}_{3}$ MIM Capacitors by Using Plasma Treatment After Dielectric Formation

In this letter, we investigate the dependence of the performance of metal-insulator-metal (MIM) capacitors with Sm₂O₃ dielectric on plasma treatment (PT) performed before Sm₂O₃ deposition, after Sm₂O₃ deposition, or both before and after Sm₂O₃ deposition. By performing PT in N₂ ambient (PTN) after Sm₂O₃ dielectric formation, the effective quadratic voltage coefficient of capacitance (VCC) can be reduced from 498 to 234 ppm/V² and the effective linear VCC can be reduced from 742.3 to 172 ppm/V for MIM capacitor with Sm₂O₃ dielectric having a capacitance density of ~ 7.5 fF/mum². The leakage current density at +3.3 V can be reduced from 3.44 10^-7 to 1.60 times 10^-8 A/cm² by performing PTN in both before and after Sm₂O₃ deposition. PTN after dielectric formation is an effective way to improve the performance of high-kappa dielectric MIM capacitors for RF and analog/mixed signal IC applications.     

肖特基型β-Ga2O3日盲紫外光电探测器

本文制备并研究了肖特基型β-Ga₂O₃日盲紫外光电探测器.结果表明：通过脉冲激光沉积外延生长的β-Ga₂O₃的（-201）晶面 X射线衍射峰半高宽仅为36 arcsec,表现出了高的晶体质量;光暗条件下的I-V曲线显示所制备的器件具有明显的肖特基整流特性,在-5V偏压下暗电流保持在0.1nA量级,正向导通电压为1.5V;光电流谱显示器件在240nm处存在显著的峰值响应,并在260nm左右呈现陡峭的截止边,日盲紫外的带内带外抑制比达到1000.同时,也研究了不同掺杂对Ga₂O₃晶体质量的影响.     

Faraday rotation effects of Mn2+-modifiedTb2O3-B2O3 glass in pulsedmagnetic field

We present the dynamical Faraday rotation of a terbium metaborate glass (25Tb₂O₃-75B₂O₃) modified with Mn²⁺ ions using pulsed magnetic fields, which reached up to ~16 T. The superexchange couplings of Tb³⁺-O ^2--Tb³⁺ or Tb³⁺-O^2--Mn²⁺ were magnetooptically observed at lower temperature. In particular, the enhancement of the Faraday rotation effect was obtained at 15 K with repetitional operation of the 16-T pulsed magnetic fields, resulting in the destruction of the dimer couplings. When the operated glasses were heated back to 300 K, only the Tb₂O₃-B₂O₃:Mn²⁺ exhibited a significant change in the Faraday rotation     

Fundamental characteristics of a magnetoresistive sensor using Y1Ba2Cu3O7-x ceramicsuperconducting films

The fundamental characteristics of a magnetic sensor fabricated from a Y₁Ba₂Cu₃O_7-x ceramic superconducting film are investigated. The operation principle of the sensor is based on the magnetoresistive properties of the material. The Y₁Ba₂Cu₃O_7-x ceramic film was prepared by the spray pyrolysis method. An element of the magnetic sensor consists of the film patterned to a meander shape. the sensitivity is discussed in connection with the noise measurement of the element. A magnetic field resolution of 2×10^-6 G/(Hz) ^1/2 at 100 Hz was obtained in the 0.1-100 G range. The sensitivity is much higher than that of a conventional semiconductor magnetic sensor. With an AC modulation provided by a magnetic field, phase detection of the magnetic field can be performed using a lock-in amplifier. An improvement in the low-frequency (<1 Hz) magnetic field resolution of about one order of magnitude was obtained using this method     

Ga2O3(Gd2O3)/InGaAsenhancement-mode n-channel MOSFETs

We have demonstrated the first Ga₂O₃(Gd₂O₃) insulated gate n-channel enhancement-mode In_0.53Ga_0.47As MOSFET's on InP semi-insulating substrate. Ga₂O₃(Gd₂ O₃) was electron beam deposited from a high purity single crystal Ga₅Gd₃O₁₂ source. The source and drain regions of the device were selectively implanted with Si to produce low resistance ohmic contacts. A 0.75-μm gate length device exhibits an extrinsic transconductance of 190 mS/mm, which is an order of magnitude improvement over previously reported enhancement-mode InGaAs MISFETs. The current gain cutoff frequency, f_t, and the maximum frequency of oscillation, f_max, of 7 and 10 GHz were obtained, respectively, for a 0.75×100 μm² gate dimension device at a gate voltage of 3 V and drain voltage of 2 V     

Temporal stability of circulating current in thin film Tl2Ba2CaCu2O8 and YBa2Cu3O7

The temporal stability of trapped transport current in annular thin film Tl₂Ba₂CaCu₂O₈ (TBCCO) and YBa₂Cu₃O₇ (YBCO) wafers has been accurately measured and has been found to be of suitable quality for the stringent requirements of nuclear magnetic resonance (NMR) magnets. No detectable decay, to the limit of the experimental apparatus (2*10^-14 Ω), was detected in those wafers with transport current at or below the critical current density J_c. The critical current density, as previously determined from 12 μm meander lines, was confirmed in a wafer with a width of 1.9 cm. The profile of trapped magnetic field resulting from induced current was modeled in order to assess its effect on the uniformity of an NMR magnet     

Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics

GaN MIS diodes were demonstrated utilizing AlN and Ga₂O₃(Gd₂O₃) as insulators. A 345 Å of AlN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a SVT RF N₂ plasma. For the Ga₂O₃(Gd₂O₃) growth, a multi-MBE chamber was used and a 195 Å oxide was E-beam evaporated from a single crystal source of Ga₅Gd₃O₁₂. The forward breakdown voltage of AlN and Ga₂O₃(Gd₂O₃) diodes are 5 and 6 V, respectively, which are significantly improved over 1.2 V from that of a Schottky contact. From the C–V measurements, both kinds of diodes showed good charge modulation from accumulation to depletion at different frequencies. The insulator/GaN interface roughness and the thickness of the insulator were measured with X-ray reflectivity.