利用背面曝光技术制造大高宽比SU8结构的一种新方法

提出了一种解决大高宽比SU8结构的新方法.该方法是将SU8胶涂在一块掩模上,紫外光从掩模的背面照射,这样SU8胶的曝光将从底部开始,不需要进行过曝光来保证底部胶的曝光剂量,从而很容易控制曝光剂量和SU8胶结构的内应力.实验结果表明,该方法能够得到高宽比为32的SU8结构,而文献报道的SU8胶结构的高宽比最大仅为18.     

利用背面曝光技术制造大高宽比SU8结构的一种新方法

提出了一种解决大高宽比SU 8结构的新方法.该方法是将SU 8胶涂在一块掩模上,紫外光从掩模的背面照射,这样SU 8胶的曝光将从底部开始,不需要进行过曝光来保证底部胶的曝光剂量,从而很容易控制曝光剂量和SU 8胶结构的内应力.实验结果表明,该方法能够得到高宽比为32的SU 8结构,而文献报道的SU 8胶结构的高宽比最大仅为18     

SU-8胶及其在MEMS中的应用

SU 8胶是一种负性、环氧树脂型、近紫外线光刻胶。它适于制超厚、高深宽比的MEMS微结构。SU 8胶在近紫外光范围内光吸收度低 ,故整个光刻胶层所获得的曝光量均匀一致 ,可得到具有垂直侧壁和高深宽比的厚膜图形 ;它还具有良好的力学性能、抗化学腐蚀性和热稳定性 ;SU 8胶不导电 ,在电镀时可以直接作为绝缘体使用。由于它具有较多优点 ,被逐渐应用于MEMS的多个研究领域。本文主要分析SU 8胶的特点 ,介绍其在MEMS的一些主要应用 ,总结了我们研究的经验 ,以及面临的一些问题 ,并对厚胶技术在我国的应用提出建议和意见     

晕苯增强CMOS图像传感器

由于紫外光在硅中的穿透深度有限，以及多晶硅栅极对紫外光的吸收，导致传统的硅基CMOS图像传感器在紫外光波段的响应不高。在此，本文选择一种低成本的下转换法来提升CMOS图像传感器的紫外响应能力，采用真空热蒸发法分别在石英衬底和CMOS图像传感器的像敏面上蒸镀了晕苯薄膜，并对薄膜的光学性能、红外光谱、光稳定性和热稳定性进行了研究。实验结果表明，晕苯薄膜能吸收紫外光并发射出500 nm的绿色荧光，可以与CMOS图像传感器的光谱响应峰值很好地匹配；同时，发现晕苯红外吸收光谱的实验值和计算值基本吻合；薄膜在200 ℃温度下退火20 min后，其发射峰的荧光强度保持在原来的95.7%；在280 nm激发波长照射大约60 min后，发光强度呈指数衰减至初始值的64%。采用CMOS单色相机在可见光（400~780 nm）和紫外光（365 nm）下定性分析了薄膜的紫外增强效果，发现蒸镀晕苯薄膜后的CMOS单色相机可以提高对紫外光的灵敏度。     

基于Zn2SiO4：Mn的紫外探测薄膜的研制

由于紫外光对硅层的透射深度小于2nm,所以传统的光电探测器件并不响应紫外光。为了增强传统的光电探测器件在紫外波段的探测能力,实用的方法是在传感器光敏面镀上“紫外一可见”变频薄膜,将紫外光转化为可见光。实验用“旋涂法”在石英基底上生成ZnzSiO4：Mn紫外探测薄膜,并对其透射光谱、吸收光谱、激发光谱与发射光谱等光学性质进行测量分析。实验测得薄膜在300nm以下透过率极低,在300nhm以上透过率很高且平稳;对300nm以下的光具有很强的吸收,对300nm以上的光吸收很弱且很平稳;激发峰在265nm,发射峰在525nm,即能将紫外光转化为可见光。实验结果表明薄膜不仅能将紫外光转化为可见光,实现传统光电探测器件的紫外探测。而且在增强紫外响应的同时不削减其他波段的响应,是一种适用于增强光电图像传感器紫外响应的紫外增强薄膜。     

SU-8胶与基底结合特性的实验研究

SU-8胶是一种负性、环氧树脂型、近紫外线光刻胶。它适于制作超厚、高深宽比的MEMS微结构。为电铸造出金属微结构，通常需要采用金属基底。但SU-8胶对金属基底的结合力通常不好，因而限制了其深宽比的提高。从SU-8胶与基底的浸润性、基底表面粗糙度以及基底对近光紫外光的折射特性入手，对SU-8胶与基底的结合力进行分析，首次指出：在近紫外光的折射率高的基底与SU-8胶有很好的结合性。经实验得出经过氧化处理的TI片的SU-8胶的结合性强。这有利于为MEMS提供低成本，高深宽比的金属微结构。     

利用紫外光刻技术进行SU8胶的研究

SU8光刻胶优异的性能在MEMS技术的发展重得到了广泛的应用，已经成为MEMS研究中必不可少的方法之一。SU8光刻胶能够进行厚度达毫米的结构研究工作，另一方面SU8结构具有很好的侧面垂直结构，通过控制工艺参数，能够获得满意的SU8胶结构。SU8光刻胶已应用于UGA技术的标准化掩模制造工艺和一些器件的研究工作。在SU8胶研究过程中，克服了许多技术难题，使得这一技术能够应用到实际的需要中。     

新型MEMS可变光衰减器的微磁执行器

探讨了新型可变光衰减器－光纤横向偏移型MEMS可变光衰减器的微磁驱动方式，从理论上分析了微磁执行器设计时应遵从的原理，讨论和设计了微磁执行器的各个参数，新开发了结合使用正胶（AZ－4000系列）和负胶（SU－8系列）的UV－LIGA工艺：在制作了光纤定位槽的基片上溅射Cr/Cu作为电镀种子层，涂布正胶，紫外光刻得到电镀模具，电镀Cu和FeNi分别得到线圈的下层、中层和上层以及铁芯；在完成下层和中层后，分别进行一次负胶工艺以形成电绝缘层和后续结构的支撑平台，即涂布负胶覆盖较下层结构，光刻开出了通往较上一层的通道并使SU－8聚合、交联以满足性能要求。并运用该工艺实现了微磁执行器。     

硅/玻璃紫外固化中间层键合

利用玻璃的透光特性和紫外固化的成熟技术,研究了一种使用紫外固化胶作为中间层的玻璃/硅室温键合工艺.通过选择一定波段的紫外固化胶,旋涂紫外胶后使用365nm光刻机作为紫外光源控制紫外固化,从而实现了硅/玻璃的中间层键合.分析测试结果表明,紫外固化辅助的中间层键合可以成功应用于硅/玻璃键合,中间层厚5～6μm,键合强度达到26MPa.该工艺只需室温条件,简单高效,成本低廉,无需额外的压力或电场,对于硅/玻璃低温键合封装具有潜在的应用价值.     

硅/玻璃紫外固化中间层键合

利用玻璃的透光特性和紫外固化的成熟技术,研究了一种使用紫外固化胶作为中间层的玻璃/硅室温键合工艺.通过选择一定波段的紫外固化胶,旋涂紫外胶后使用365nm光刻机作为紫外光源控制紫外固化,从而实现了硅/玻璃的中间层键合.分析测试结果表明,紫外固化辅助的中间层键合可以成功应用于硅/玻璃键合,中间层厚5～6μm,键合强度达到26MPa.该工艺只需室温条件,简单高效,成本低廉,无需额外的压力或电场,对于硅/玻璃低温键合封装具有潜在的应用价值.     

Microstructuring of SU-8 photoresist by UV-assisted thermal imprinting with non-transparent mold

In this study, we explored a rapid and low-cost process for patterning in a SU-8 photoresist by thermal imprinting with a non-transparent mold such as Ni mold. One of major obstacles in the process is that the extremely good formability of uncured SU-8 even near room temperature causes the collapse of imprinted patterns during and after de-molding because a sample cannot be exposed to UV light during imprinting owing to the non-transparency of a mold. To overcome this problem, un-cured SU-8 resists were pre-treated with UV light, heat, and O₂ plasma for controlling their formability, and applied to thermal imprint tests to be compared each other in terms of the replication fidelity. As a result, a SU-8 sample pre-treated with UV light for 8 s resulted in the best replication quality for given imprint conditions and mold dimensions, and we could successfully replicate micro patterns in SU-8 resist without a quartz mold. As compared with conventional UV-imprint processes, this process has potential merits such as a lower mold cost, an easier mold release and a less air-entrapment.     

SU—85光刻胶的应用工艺研究

SU－8系列负性光刻胶是一种新品光刻胶,它具有良好的光敏性和高深度比,适合于微机电系统,UV－LIGA和其它厚膜,超厚膜应用[1,2],介绍了利用SU－85光刻胶,采用UV曝光制轩LIGA掩模板涉及的SU－85工艺研究结果。     

应用三维线算法的SU-8胶光刻过程模拟

采用二维法向量作为分量,加权求和近似得到三维网格点上的单位法向量,将经典的二维线算法改进为三维形式。综合SU-8胶光刻过程中衍射、吸收率随光刻胶深度的变化及交联显影等各种效应,应用该三维线算法对SU-8化学放大胶进行光刻过程三维建模。该模型对被加工表面演化过程的模拟较为精确,可在实际应用中对SU-8胶的光刻模拟结果进行有效预测。     

Microcontact printing of biomolecular gratings from SU-8 masters duplicated by Thermal Soft UV NIL

Thermal Soft UV nanoimprint lithography (NIL) was performed to replicate nanostructures in SU-8 resist. The SU-8 resist was structured with a PDMS stamp molded against an original silicon master which comported gratings of lines (500 nm width/1 μm pitch). The patterns obtained in SU-8 were used in a second step as a template for PDMS molding of daughter stamps. Pattern transfer quality and dimension control were achieved on these second generation PDMS stamps using AFM measurements. As a final validation of the whole duplication processes, these second generation PDMS stamps were finally employed to perform μCP of streptavidin molecules on a glass slide activated by plasma O₂ treatment. AFM observation and fluorescence microscopy reveal that molecular patterns produced with SU8-molded PDMS stamps are not discernable from those obtained with a PDMS stamp directly molded on the original silicon master. Coupling Thermal Soft UV NIL and microcontact printing opens a new method for generating a large quantity of SU-8 templates on which functional PDMS stamps can be replicated in a reduced time. We thus propose a functional duplication process for soft-lithography implementation which may further reduce the cost of this technology for industrial development.     

SU-8环氧树脂的分离实验研究

为分析和解决商业用SU-8胶在355 nm波长的吸收性和后烘缩胶等问题,先采用柱层析对SU-8环氧树脂进行分离,然后进一步用高压液相色谱-尺寸排阻色谱法对SU-8环氧树脂进行分离和分析。结果表明,SU-8环氧树脂包括SU-1,SU-2,SU-4,SU-6和SU-8多种组分及其它杂质,分子量分布在100-100 000的范围。根据分析结果,研究了上述问题出现的原因,并配制了性能优化的SU-8光刻胶,结合全息光刻技术制作了三维光子晶体。     

High density patterns fabricated in SU-8 by UV curing nanoimprint

We present results on the nanofabrication of high density patterns in SU-8 resist, based on nanoimprinting combined with UV curing. The temperature dependence of the imprinted depth was investigated. The SU-8 gratings were well resolved with high density, good uniformity and high aspect ratio. This was achieved at low temperature and low pressure. Some issues and possible solutions are discussed. The process should find broader applications such as in the manufacture of nanofluidic channels and nanophotonic structures.     

Fabrication of high aspect ratio gratings for X-ray imaging

Grating-based X-ray imaging system is an important tool to investigate the inner structure of thick samples. The key components of the system consist of three golden gratings. The high aspect ratio gratings are fabricated using the SU-8 material. Considering the grating linewidth broadening varies with exposure dose, the relationship between linewidth broadening and exposure dose is studied experimentally. A series of gratings with different periods and different duty cycles are designed by optimizing the linewidth and exposure dose. Finally, the gratings are successfully fabricated by combining UV lithography and electroplating.     

基于液态金属的柔性频率可重构CPW天线设计

针对固态金属天线在受力弯曲后易产生裂纹导致功能失效的问题,本文提出一种频率可重构的柔性液态金属共面波导馈电天线.该天线由四个不同半径的开口谐振环（Split-Ring Resonators,SRR）构成,利用紫外光刻技术（ultraviolet lithography）制备天线的SU-8负模结构,其次浇注聚二甲基硅氧烷进行倒模并键合,最后将液态金属合金注入至微流沟道,完成天线的制作.通过机械施压方式改变不同谐振环间的通断状态,可在1GHz~6GHz范围内实现频率可重构,满足WLAN、WiMAX和部分C波段的通信要求.弹性体和液态金属的特性使天线具有更好的灵活性和耐久度,可应用于集成电子设备的弯曲表面.     

玻璃纤维增强SU-8胶技术

SU-8胶是一种能够以低成本制作高深宽比微结构的负性光刻胶,在非硅微电子机械系统(MEMS)领域具有广阔的应用前景。针对SU-8胶作为微结构材料时,其弹性模量和断裂强度较低的特性,采用透明度高的微细玻璃纤维作为增强相材料,制备玻璃纤维/SU-8复合材料。开发出一种既能够增强成型后SU-8微结构机械强度,又不影响SU-8可直接光刻成型能力的改性技术。通过光学显微镜和扫描电子显微镜(SEM)对该复合材料的微观结构进行了分析和表征。同时,利用拉伸实验对复合材料的机械性能进行测试。实验结果表明,在不改变紫外光刻电铸(UV-LIGA)的光刻-显影工艺特征的条件下该复合材料的弹性模量(1 613 MPa)、断裂伸长率(1.63%)和断裂强度(26.7 MPa)均比纯SU-8胶材料有较大提升。     

Wet releasing and stripping SU-8 structures with a nanoscale sacrificial layer

This paper presents a new method of wet releasing SU-8 structures using very thin Omnicoat^™ as sacrificial layer and NMD-3 developer as releasing solution. Four-inch sized SU-8 structures with different pattern and thickness of 65 μm have been successfully released from silicon substrate by this method. Experiments show that Omnicoat^™ layer is very helpful to strip SU-8 molds in which metal structures are electroplated. SU-8 can be removed directly using remover if there is an Omnicoat^™ layer between the substrate and SU-8 and the electroplated structures is with large dimension. In the case of electroplated structures with small feature size, SU-8 can be removed by combining wet stripping and plasma etching. Nickel micro coils with linewidth of 10 μm and aspect ratio of 4.1 have been fabricated. The analysis about the influence of Omnicoat^™ layer’s thickness on integrity of SU-8 micro coils is also given in our work.