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1.
提出了一种新型结构压力传感器,器件由上下两硅片键合而成,上硅片制作半岛型结构氮化硅谐振梁,下硅片制作矩形压力膜.应用有限元软件对器件结构及灵敏度进行了计算机模拟分析,器件利用MEMS技术研制并采用电热激励压阻拾振方式进行了测试.实验及理论模拟分析结果证实新型结构可以大大提高压力传感器灵敏度.  相似文献   

2.
一种半岛型结构谐振梁压力传感器   总被引:1,自引:0,他引:1  
提出了一种新型结构压力传感器,器件由上下两硅片键合而成,上硅片制作半岛型结构氮化硅谐振梁,下硅片制作矩形压力膜。应用有限元软件对器件结构及灵敏度进行了计算机模拟分析,器件利用MEMS技术研制并采用电热激励压阻拾振方式进行了测试。实验及理论模拟分析结果证实新型结构可以大大提高压力传感器灵敏度。  相似文献   

3.
本文介绍一种用硅材料制成的十字梁力传感器,它的各主要结构部分是通过微加工技术在同一硅片上得到的。具有灵敏度高、温漂小,成本低、一致性好等优点。本文对器件进行了结构分析、应力计算,得到了各结构参数对器件灵敏度的影响,并在理论分析的指导下制作了高灵敏度的力传感器样品,最高灵敏度可达340mV/10g,适用于小量程范围力的测量。器件还具有过载保护结构。  相似文献   

4.
研究了一种带有自检功能的在平面内自限制压阻式加速度传感器.为实现该加速度传感器,提出了一套新的体硅微机械工艺,使用普通硅片取代SOI硅片来制作器件.传感器采用在深槽侧壁(悬臂梁弯曲的表面)制作压阻的方法,灵敏度比在硅表面上制作压阻的传统器件高近一倍.传感器利用集成在内的静电驱动器,实现电自检测功能.  相似文献   

5.
带有静电自检测功能的高灵敏度加速度传感器   总被引:2,自引:0,他引:2  
研究了一种带有自检功能的在平面内自限制压阻式加速度传感器.为实现该加速度传感器,提出了一套新的体硅微机械工艺,使用普通硅片取代SOI硅片来制作器件.传感器采用在深槽侧壁(悬臂梁弯曲的表面)制作压阻的方法,灵敏度比在硅表面上制作压阻的传统器件高近一倍.传感器利用集成在内的静电驱动器,实现电自检测功能.  相似文献   

6.
建立了光子晶体光纤(PCF)型本征法布里-珀罗(F-P)腔光纤压力传感器压力响应理论模型,讨论了各参数对压力响应灵敏度的影响,给出了Matlab程序理论模拟结果。鉴于PCF焊接工艺的困难,提出了利用外径不同的单多模光纤熔接构成的改进型单多模光纤复合本征F-P腔光纤压力传感器结构,建立了压力响应理论模型,分析了提高压力响应灵敏度的关键参数,并模拟了光纤外径对压力响应灵敏度的影响。通过对两种本征F-P腔光纤压力传感器的比较分析看出,改进型结构无论在压力响应灵敏度还是制作难易度方面都颇具优势。  相似文献   

7.
张庆鑫  刘理天 《电子器件》1997,20(1):518-521
本文提出了一种新型的双桥结构压力传感器两个灵敏度不同的敏感电桥被制作于同一芯片上,通过双桥间的线补,可有效地消除压力传感器的零位和灵敏度温漂。文中给出了具体的算法及相应的实验结果2。  相似文献   

8.
葛益娴  赵伟绩  张鹏 《半导体光电》2017,38(6):788-791,797
提出了一种新型结构的法布里-珀罗(F-P)腔光纤压力传感器.该传感器基于法布里-珀罗多光束干涉,利用压力敏感膜的纵向挠度变化带动位移柱的横向位移运动来改变F-P腔的腔长变化.详细阐述了传感器新结构的设计方法及其工作原理,分析了不同参数对传感器性能的影响.采用ANSYS软件仿真模拟了传感器压力敏感膜在压力作用下的挠度变化.结合现有的MEMS工艺,可制作出工艺简单、温度系数低、灵敏度高,且抗电磁干扰的MEMS光纤压力传感器.  相似文献   

9.
Shoji  S 柯导明 《电子器件》1990,(3):52-52,44
用微机械加工的方法,可以制作超小型的高性能化学传感器和用作流量控制的微型阀.如果这些器件被集成在一块硅片上,就能制成非常小的常规化学分析系统.这种微型分析系统优点是灵敏度高,响应快,几乎有没死区,所需的采样量非常少.为了制作诸如流体注入分析器(FIA)这样完善的化学分析器单片集成系统,必须把微型泵和采样注入器造在硅片上.微型泵由一个压力执行器,二个逆止阀和一个由压力执行器驱动的薄膜片组成,这个结构如图1所示.逆止阀用多晶硅作为材料,磷硅玻璃(PSG)作为牺牲层,制造工艺和IC工艺完全兼容.  相似文献   

10.
研制了一种新型环振式数字压力传感器,它可应用于汽车轮胎压力监测报警系统(TPMS).采用硅薄膜上的PMOS环形振荡器作为压力敏感元件,两个反方向变化的环振输出信号通过集成在片内的混频器实现频率相减.该传感器具有准数字输出、温度系数低、灵敏度高以及制作工艺简单等特点.分析并设计了压力传感器的环形振荡器电路、混频器电路、物理结构.分析了环形振荡器的频率特性、环形振荡器的谐振频率与压力的关系,以及制作工艺,并制作了样品,其灵敏度为5.12 kHz/Bar.  相似文献   

11.
A MEMS piezoresistive magnetic field sensor based on a silicon bridge structure has been simulated and tested.The sensor consists of a silicon sensitivity diaphragm embedded with a piezoresistive Wheatstone bridge,and a ferromagnetic magnet adhered to the sensitivity diaphragm.When the sensor is subjected to an external magnetic field, the magnetic force bends the silicon sensitivity diaphragm,producing stress and resistors change of the Wheatstone bridge and the output voltage of the sensor.Good agreeme...  相似文献   

12.
The design guidelines for micro diaphragm-type pressure sensors have been established by characterization of the relationships among diaphragm thickness, side length, sensitivity, and resonant frequency. According to the study, the thickness need to be thin and the side length need to be small in order to get the sensitive diaphragm with high resonant frequency. A Fabry-Perot based pressure sensor has been designed based on the guidelines, fabricated and characterized. In principle, the sensor is made according to Fabry-Perot interference, which is placed on a micro-machined rectangular silicon membrane as a pressure-sensitive element. A fiber-optic readout scheme has been used to monitor sensor membrane deflection. The experimental results show that the sensor has a very high sensitivity of 28.6 mV/Pa, resolution of 2.8 Pa, and up to 91 kHz dynamic response.  相似文献   

13.
本文介绍了一种压阻式MEMS压力传感器的工作原理,该装置由玻璃支座、单晶硅衬底及PZT薄膜构成,压阻薄膜连接组成惠斯登电桥,以取得更高的电压灵敏度和低温度敏感性。使用有限元分析软件ANSYS对单晶硅衬底的轴对称模型进行了仿真分析,以达到优化设计的目的。  相似文献   

14.
A simulation program is described which is capable of calculating the output response of silicon piezoresistive or capacitive pressure sensors as a function of both pressure and temperature. A thermoelastic plane-stress formulation is used in calculating the stress and deflection of the transducer diaphragm. Both analytical and finite-difference solution methods are available, depending on the sensor structure. Diaphragm thickness taper, oxide and package stress, and rim effects are simulated. For capacitive structures, the program accurately predicts the diaphragm deflection and pressure sensitivity as a function of pressure and temperature. Stepped diaphragm structures are shown to be capable of improving pressure sensitivity by as much as 50 percent. The package-induced thermal drift for electrostatically sealed glass-silicon devices is typically less than 0.05 mmHg/°C.  相似文献   

15.
王静 《光电子.激光》2009,(10):1286-1289
结合波纹膜片的压力敏感特性和光纤Bragg光栅(FBG)的应变传感特性,设计了一种新型的FBG渗压传感器。传感器通过拉杆式结构将波纹膜片在应力下的挠度变形转化为FBG的轴向应变,通过恒温条件下的压强标定试验,得出传感器的压强灵敏度约为20 nm/MPa,和普通光栅相比,其压强灵敏度提高了6 000多倍。对传感器探头内部的光栅进行了温度特性标定试验,通过温度补偿光栅消除外界温度对渗压测量结果的影响。将该传感器用于隧道涌水模型的开挖试验,测得模型注水过程中测点的渗压值不断增大并趋于稳定,隧道开挖过程中渗压值轻微波动,提升水位时渗压值急剧增大。  相似文献   

16.
集成硅微机械光压力传感器   总被引:2,自引:1,他引:1  
温志渝  费龙 《半导体光电》1995,16(3):245-247
介绍了一种新颖的集成硅微机械光压力传感器的结构、工作原理、制造工艺和实验结果。该传感器是利用半导体集成电路微细加工技术和各向异性腐蚀相结合的方法,将传输、获取信息的光波导,敏感弹性硅膜和光电探测器集成在一块三维硅基片上得到的。它具有灵敏度高、抗干扰能力强、自身无需电源、防爆、成本低和可靠性高等优点。  相似文献   

17.
A miniature diaphragm pressure transducer having sensitivity to acoustic signals at the level of conversational speech has been fabricated by combining micromachining procedures (to produce a thin silicon-nitride diaphragm) with ZnO thin-film processing. The sensor consists of a patterned ZnO layer (which acts as a piezoelectric transducer) deposited on a thin square micromachined diaphragm made of LPCVD silicon nitride. The diaphragm, 2 µm in thickness, is the thinnest yet reported for a piezoelectric readout structure of relatively large area (3 × 3 mm2). The transducer shows an unamplified response of roughly 50 µV/µbar when excited by sound waves at 1 kHz with the variation of the sensitivity from 20 Hz to 4 kHz being approximately 9 dB. These results are obtained using a 0.1-mm-wide annular pattern that measures 3.6 mm in circumference.  相似文献   

18.
A novel design of piezoresistive, low-pressure sensors is presented. This design exhibits a number of advantages compared to conventional ones. The main objective of this development was realizing a sensor with high sensitivity, high pressure overload, and low non-linearity. This paper describes the theory of designing a piezoresistive low-pressure sensor. Through the application of a square diaphragm bossed in the center, a piezoresistive low-pressure sensor for the pressure range of ±10 kPa could be realized, exhibiting excellent sensitivity and low non-linearity of 35 mV/VF.S.O. and <|±0.05|%, respectively.  相似文献   

19.
An optical micro electron mechanical system (MEMS) pressure sensor with a mesa membrane is presented. The operating principle of the MEMS pressure sensor is expatiated by the Fabry-Perot (F-P) interference and the relation between deflection and pressure is analyzed. Both the mechanical model of the mesa structure diaphragm and the signal averaging effect is validated by simulation, which declares that the mesa structure diaphragm is superior to the planar one on the parallelism and can reduce the signal averaging effect. Experimental results demonstrate that the mesa structure sensor has a reasonable linearity and sensitivity.  相似文献   

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