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1.
GaN基蓝紫光激光器的材料生长和器件研制 总被引:1,自引:0,他引:1
报道了国内首次研制成功的GaN基蓝紫光激光器的材料外延生长、器件工艺和特性.用MOCVD生长了高质量的GaN及其量子阱异质结材料,以及异质结分别限制量子阱激光器结构材料.GaN材料的X射线双晶衍射摇摆曲线(0002)对称衍射和(10(-1)2)斜对称衍射半宽分别为180″和185″;3μm厚GaN薄膜室温电子迁移率达到850cm2/(V·s).基于以上材料,分别成功研制了室温脉冲激射增益波导和脊型波导激光器,阈值电流密度分别为50和5kA/cm2,激光发射波长为405.9nm,脊型波导结构激光器输出光功率大于100mW. 相似文献
2.
Ryu H.Y. Haleem K.H. Lee S.N. Jang T. Son J.K. Paek H.S. Sung Y.J. Kim H.K. Kim K.S. O.H. Nam Park Y.J. Shim J.I. 《Photonics Technology Letters, IEEE》2007,19(21):1717-1719
The authors report on the high-performance blue laser diodes (LDs) with an emission wavelength of ~448 nm employing InGaN single-quantum-well (QW) active layers. At 100-mW continuous-wave (CW) output power, operation current and voltage are, respectively, 150 mA and 5.3 V, corresponding to the wall plug efficiency of >12%, a record value for the single-mode InGaN LDs with blue wavelengths. The single QW blue LD showed normal temperature dependence of light output-current curves with the characteristic temperature of 170 K. In addition, we demonstrate a high level of catastrophic optical damage of >300 mW and long device lifetime under CW operation condition at room temperature. 相似文献
3.
Feng Liang Degang Zhao Zongshun Liu Ping Chen Jing Yang Lihong Duan Yongsheng Shi Hai Wang 《半导体学报》2021,42(11):71-73
In this work,we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode(LD),and its stimulated emission wavelength is around 442 nm.The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition(MOCVD),and the width and length of the ridge waveguide structure are 30 and 1200 μm,respectively.The threshold current is about 400 mA,and corresponding threshold current density is 1.1 kA/cm2. 相似文献
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Hooper S.E. Kauer M. Bousquet V. Johnson K. Barnes J.M. Heffernan J. 《Electronics letters》2004,40(1):33-34
The first InGaN multiple quantum well laser diodes produced by molecular beam epitaxy are reported. Ridge waveguide lasers have been demonstrated at room temperature under pulsed current injection conditions. The lasers emit at a wavelength of approximately 400 nm with a spectral line-width of less than 0.2 nm, and a threshold current density of /spl sim/30 kA cm/sup -2/. 相似文献
7.
This letter presents experimental results of a three-alloy-based short-injector quantum cascade laser (QCL). The investigated 4-mm-long device shows a pulsed threshold current density of 1.24 kA/cm2 , a slope efficiency of 1.4 W/A, a characteristic temperature above 250 K, and a peak average output power above 726 mW at room temperature. A good high-temperature performance is attributed to the diagonal transition design and better depopulation of the lower laser levels at higher temperatures. The laser emission wavelength at room temperature is 8 mum, resulting in a low voltage defect of 71 meV per period for the QCL structure. 相似文献
8.
Itoh S. Okuyama H. Matsumoto S. Nakayama N. Ohata T. Miyajima T. Ishibashi A. Akimoto K. 《Electronics letters》1993,29(9):766-768
Room temperature pulsed operation of ZnCdSe/ZnSe/ZnMgSSe SCH lasers has been achieved. Blue-green stimulated emission is observed at a wavelength of 498.5 nm. The threshold current density is 2.8 kA/cm/sup 2/ for the diode made by molecular beam epitaxy.<> 相似文献
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A remarkable threshold current density reduction (from 3.5 kA/cm/sup 2/ to 1.6 kA/cm/sup 2/) of GaInP/AlInP visible light lasers grown by gas source molecular beam epitaxy (GS-MBE) was obtained by introducing 50 pairs of GaInP(7.1 AA)/AlInP(7.1 AA) short period superlattice confinement (SLC) layers. As a result, the room temperature continuous wave (CW) operation was obtained at 669 nm with a minimum threshold current of 50 mA and maximum light output of 10.5 mW.<> 相似文献
10.
A. Hierro J.M. Ulloa E. Calleja B. Damilano J. Barjon J.-Y. Duboz J. Massies 《Photonics Technology Letters, IEEE》2005,17(6):1142-1144
Room temperature lasing emission at 1.338 and 1.435 /spl mu/m with threshold current densities of 1518 and 1755 A/cm/sup 2/, respectively, is obtained in broad area GaInNAs-GaAs laser diodes (LDs) grown by molecular beam epitaxy. The 1.338-/spl mu/m LDs show a power output per facet up to 0.20 W/A, a characteristic temperature (T/sub 0/) of 78 K, and an external transparency current density (J/sub tr/) of 0.77 kA/cm/sup 2/. Increasing the lasing wavelength to 1.435 /spl mu/m results in a larger J/sub tr/ of 1.16 kA/cm/sup 2/ and a lower T/sub 0/ of 62 K, due to larger nonradiative recombination. However, the 1.435-/spl mu/m LDs still display a power output per facet up to 0.15 W/A, and a high internal quantum efficiency of 52%. These improved performances are achieved without the need to use strain compensation layers, Sb as a surfactant during the quantum-well growth, or a postgrowth thermal anneal cycle. 相似文献
11.
Ha W. Gambin V. Wistey M. Bank S. Seongsin Kim Harris J.S. Jr. 《Photonics Technology Letters, IEEE》2002,14(5):591-593
In this letter, results from a ridge waveguide laser diode (LD) structure, with three GaInNAs quantum wells (QWs) and GaNAs barriers, are presented. The sample was grown by solid source molecular beam epitaxy with an RF plasma nitrogen source. These devices differ from previously reported GaInNAs QWs LDs that used GaAs as the barrier material. The introduction of nitrogen into the barriers reduces the spectral blue shift caused by post-growth annealing. Long wavelength emission out to 1.405 μm was observed. The devices exhibited threshold current densities as low as 1.5 kA/cm2, high differential efficiency of 0.67 W/A, and a maximum output power of 350 mW 相似文献
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Kwon O.-K. Yoo B.-S. Shin J.-H. Baek J.-H. Lee B. 《Photonics Technology Letters, IEEE》2000,12(9):1132-1134
All-monolithic air-post index-guided vertical-cavity surface-emitting lasers have been demonstrated under pulsed electrical injection at room temperature. The structure grown in single step by metal-organic chemical vapor deposition employs InP lattice matched InAlAs/InAlGaAs Bragg mirrors and a 2λ-thick periodic gain active region with 15 InGaAs quantum wells (QWs). We report threshold current characteristics of these devices grown on a 2-in wafer with wide emission wavelength range of 1.51~1.59 μm. For the devices larger than 30-μm in diameter, we found the minimum threshold current density of ~2.93 kA/cm2 at the emission wavelength of 1.57 μm, corresponding to about 20 nm wavelength offset between photoluminescence peak of InGaAs QWs and resonant cavity wavelength 相似文献
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Yang Q. Bronner W. Manz C. Moritz R. Mann Ch. Kaufel G. Kohler K. Wagner J. 《Photonics Technology Letters, IEEE》2005,17(11):2283-2285
We report on the demonstration of continuous-wave (CW) operation of GaInAs-AlGaAsSb quantum cascade (QC) lasers. By placing a 2.5-/spl mu/m-thick gold layer on both sides of the laser ridge to extract heat from the active region in the lateral direction, together with mounting the device epilayer down, we have achieved CW operation of GaInAs-AlGaAsSb QC lasers composed of 25 stages of active/injection regions. The maximum CW operating temperature of the lasers is 94 K, and the emission wavelength is around /spl lambda//spl sim/4.65 /spl mu/m. For a device with the size of 10/spl times/2000 /spl mu/m/sup 2/, the CW optical output power per facet is 13 mW at 42 K and 4 mW at 94 K. The CW threshold current density is 1.99 kA/cm/sup 2/ at 42 K, and 2.08 kA/cm/sup 2/ at 94 K, respectively. 相似文献
15.
J.S. Yu A. Evans S. Slivken S.R. Darvish M. Razeghi 《Photonics Technology Letters, IEEE》2005,17(6):1154-1156
We report continuous-wave (CW) operation of a 4.3-/spl mu/m quantum-cascade laser from 80 K to 313 K. For a high-reflectivity-coated 11-/spl mu/m-wide and 4-mm-long laser, CW output powers of 1.34 W at 80 K and 26 mW at 313 K are achieved. At 298 K, the CW threshold current density of 1.5 kA/cm/sup 2/ is observed with a CW output power of 166 mW and maximum wall-plug efficiency of 1.47%. The CW emission wavelength varies from 4.15 /spl mu/m at 80 K to 4.34 /spl mu/m at 298 K, corresponding to a temperature-tuning rate of 0.87 nm/K. The beam full-width at half-maximum values for the parallel and the perpendicular far-field patterns are 26/spl deg/ and 49/spl deg/ in CW mode, respectively. 相似文献
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Miguel-Sanchez J. Guzman A. Ulloa J.M. Montes M. Hierro A. Munoz E. 《Photonics Technology Letters, IEEE》2005,17(11):2271-2273
In this work, we present room-temperature laser emission at 1.206 /spl mu/m from GaInNAs-GaAs quantum-well (QW) laser diodes (LDs) grown on misoriented GaAs (111)B substrates for the first time. Details of the structure and the molecular beam epitaxial growth of the lasers are discussed. We found that the postgrowth rapid thermal annealing increased the optimum emission, while the in situ self annealing effect in these QWs is almost negligible. The optimum annealing cycle (30 s at 850/spl deg/C) is comparable to that found for the cladding-free GaInNAs single QW samples grown on GaAs (111)B. Finally, the optical and electrical characterization of these LD devices is presented. The LDs show a room-temperature threshold current density of 2.15 kA/cm/sup 2/, with a differential quantum efficiency of 37%, under pulsed conditions. 相似文献
18.
Wang Y.H. Tai K. Wynn J.D. Hong M. Fischer R.J. Mannaerts J.P. Cho A.Y. 《Photonics Technology Letters, IEEE》1990,2(7):456-458
Vertical cavity surface emitting lasers (VCSELs) with GaAs/AlGaAs multiple quantum well (20 wells) graded-index separate-confinement-heterostructure (GRIN-SCH) active regions are discussed. The VCSEL structures, which also contained two AlxGa1-xAs/AlyGa1-yAs distributed Bragg reflectors, were grown by molecular beam epitaxy and had a threshold current and current density at room temperature pulsed excitation of 16 mA and 14 kA/cm2, respectively, near 0.85-μm wavelength. Both single-longitudinal and fundamental transverse mode emission characteristics were observed with a light output greater than 3 mW and a slope efficiency of 0.12 mW/mA 相似文献
19.
Y. Qian Z.H. Zhu Y.H. Lo H.Q. Hou M.C. Wang W. Lin 《Photonics Technology Letters, IEEE》1997,9(1):8-10
We demonstrate, for the first time, double-bonded AlGaInAs strain-compensated quantum-well 1.3-/spl mu/m vertical-cavity surface-emitting lasers (VCSELs). GaAs-AlAs Bragg mirrors were wafer-bonded on both sides of a cavity containing the AlGaInAs strain-compensated multiple-quantum-well active layers sandwiched by two InP layers. The lasers have operated under pulsed conditions at room temperature. A record low pulsed threshold current density of 4.2 kA/cm/sup 2/ and a highest maximum light output power greater than 4.6 mW have been achieved. The maximum threshold current characteristic temperature T/sub 0/ of 132 K is the best for any long wavelength VCSELs. The laser operated in a single-longitudinal mode, with a side-mode suppression ratio of more than 40 dB, which is the best results for 1.3-/spl mu/m VCSELs. 相似文献
20.
Bank S.R. Wistey M.A. Yuen H.B. Goddard L.L. Ha W. Harris J.S. Jr. 《Electronics letters》2003,39(20):1445-1446
Low-threshold room temperature continuous wave 1.49 /spl mu/m GaInNAsSb lasers are presented. Room temperature threshold current density of 1.1 kA/cm/sup 2/ was observed with a high external quantum efficiency of 40% and maximum output power of 30 mW from both facets. 相似文献