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 共查询到20条相似文献,搜索用时 343 毫秒
1.
Experimentalstudiesofnonlinearlaser-plasmainteractionsandhotelectronsQiLan-Ying(祁兰英);ZhengZhi-Jian(郑志坚);MetQi-Yong(梅启庸);LiSan...  相似文献   

2.
Micro-PIXEanalysisoftraceelementcompositionandtheirdistributionin mineralsofmantleperidotiteChenYou-Hong(陈友红),ZhuJie-Qing(朱节清...  相似文献   

3.
TheoreticalstudyoninteractionofneonlikeGeX-raylasersingainsaturationWangGuang-Yu(王光裕)(InstituteofAppliedPhysicsandComputation...  相似文献   

4.
Measurementof8~25keVelectronimpactK-shellionizationcrosssectionsofCuandCoelementsAnZhu(安竹),LiTai-Hua(李泰华),WangLiang-Ming(王良明)...  相似文献   

5.
Effectsofradiation-inducedoxideandinterfacechargesonmobilitydegradationin MOSFETsRenDi-Yuan(任迪远);YuXue-Feng(余学锋);LuWu(陆妩);Gao...  相似文献   

6.
LabelingandstabilitystudyOn ̄(99m)Tc-tissueplasminogenactivatorasthrombusandtumorimagingagentLiWei-Yi(李卫一),CaoGuo-Xian(曹国宪),Yu...  相似文献   

7.
GRASPcalculationsofsomeradiationlifetimesandwavelengthsforO-likeionswith525≤Z≤79WangWan-Jue(王宛珏);JiangRen-Bin(姜仁滨)(Department...  相似文献   

8.
Solvent extractionofU(VI)andTh(IV)ionswithN,N,N',N'-tetrabutylsuccinylamidfromnitricacidsolutionsWangYou-Shao(王友绍),BaoBo-Rong...  相似文献   

9.
Gravitationalradiationofangular-momentumfromgeneralcovariantconservationlawFengShi-Xiang(FengSze-Shiang,冯世祥)andZongHong-Shi(宗...  相似文献   

10.
应用原位杂交方法观察75mGyX射线全身照射后不同时间小鼠胸腺、脾、肠系膜淋巴结c-fos基因mRNA转录水平的变化。结果发现,假照组胸腺、脾、肠系膜淋巴结内巨噬细胞、多突起细胞、部分淋巴细胞(主要为大淋巴细胞)c-fosmRNA有低水平基础表达;75mGy全身照射后c-fos的转录水平明显增高,胸腺为1h达峰值,脾脏2h达峰值,肠系膜淋巴结变比幅度较小,但持续时间较长。胸腺和脾脏阳性细胞12h基本恢复至假照水平,雨淋巴结细胞c-fos至照后12h仍稍高于对照组。实验结果表明,小剂量电离辐射可使免疫活性细胞c—fos的转录水平上调。  相似文献   

11.
We have measured sulfur K x-ray emission following electron capture for 70 MeV Sq+(q=13-16) ions incident on Ar. K radiation resulting from capture was isolated by detecting coincidences between S K x rays and electron capture events. Two recombination processes which result in the emission of a K x ray were identified: (1) dielectronic recombination, which is the inverse Auger effect and (2) radiative recombination, which results from capture into a high n state (n?2). The cross section for K radiation following capture increases by more than three orders of magnitude for q = 13+ to 16+. The fraction of capture events which result in K radiation increases from 0.0004 for q = 13+ to 0.3 for q = 16+, indicating that radiative recombination becomes relatively more important for high charge states, i.e. as q ? Z. Possible applications to radiative loss processes in a plasma are discussed.  相似文献   

12.
Results of irradiation and high field tunnel injection experiments on MOS capacitors are discussed. The midgap voltage shift as a function of dose is caused by hole trapping only. In the case of tunnel injection, the generation of electron-hole pairs by impact ionization requires a much larger electron density and high fields. Thus a model of charge build-up is established which takes into account the hole trapping in neutral oxide states, the subsequent electron trapping in now positively charged states and detrapping of captured electrons. By means of this model, the prediction of the radiation hardness of MOS devices is feasible, provided that the impact ionization coefficient a is known accurately. If this is not the case, the combined techniques of ionizing irradiation and tunnel injection can be utilized to determine ? = ?o exp(-H?/F) as a function of the electrical field F. Electron capture and detrapping crosssections ?n and ?n, resp., can be deduced by fitting the model to the experimental results. An F-3 dependency for ?n and an exp(-H?/F) dependency for ?n are found. Only a weak dependence on different processing parameters is observed. The proposed model is verified by a sequence of irradiation and injection steps. The generation of oxide charge is accompanied by an increase in interface state density Dit with a distribution, which peaks at about 0.15 eV above midgap, in both experiments. The results indicate that the generation of interface states is proportional to the amount of trapped holes.  相似文献   

13.
屏蔽计算是核设施屏蔽设计与优化的重要依据,蒙特卡罗(MC)方法与离散纵标(SN)法的耦合方法可有效解决复杂几何深穿透输运问题。MC-SN耦合方法将蒙特卡罗程序产生的粒子径迹信息转换为离散纵标法的边界面入射角通量密度,在此过程中需统计每个离散方向对应角度区域的粒子信息,以经纬线划分角度区域的方法在转换过程中会影响粒子平衡。通常角通量密度可采用球谐函数展开,本文针对层对称求积组和勒让德切比雪夫求积组,研究耦合方法对各阶球谐函数的转换精度。分析结果表明,耦合方法的离散角度区域划分对低阶球谐函数的转换精度较高,但对高阶球谐函数的转换精度具有较大影响,其中对二阶球谐函数转换精度的平均偏差在10%以上。由于高阶求积组的角度区域的划分相关性更强,因此转换精度明显高于低阶求积组。  相似文献   

14.
对He、Ti原子比n(He)/n(Ti)为0.004~0.300的7块氚化钛膜样品在1300K以下进行热解吸分析,以获得它们的热解吸谱。在低于1300K范围内,氚化钛膜共有4种氦的热释放峰,分别对应于贯穿至表面的氦泡、近表面的氦、体相中的氦泡和氦的小团簇。对这4种类型的氦释放峰的解吸温度和解吸量随膜中总氦量的变化分别进行分析,研究观测膜中各种状态存在的氦量随n(He)/n(Ti)增加的变化趋势。实验观测到,升温将导致氚化钛膜可容纳的氦量大幅降低。  相似文献   

15.
16.
Energy levels, radiative transition probabilities, and autoionization rates for B-like neon (Ne5+) including 1s22s2nl, 1s22s2pnl, and 1s22p2nl (n = 2-11 and l = 0-7) states were calculated using a multiconfigurational Hartree-Fock method (Cowan code) and a relativistic many-body perturbation theory method (RMPT) code. Autoionizing levels above three thresholds (1s22s21S, 1s22s2p 3P, 1s22s2p 1P) were considered. We find that configuration mixing (2s2nl + 2p2nl) plays an important role for all atomic characteristics. Branching ratios relative to the first threshold and the intensity factor were calculated for satellite lines and dielectronic recombination rate coefficients for the 190 odd-parity and 198 even-parity excited states. The dielectronic recombination rate coefficients including 1s22s2nl, 1s22s2pnl, and 1s22p2nl (n = 2-11 and l = 0-7) states were calculated. The contributions from the excited states higher than n = 11 were estimated by extrapolation of all atomic characteristics to derive the total dielectronic recombination rate coefficient. It is found that the distribution of the rate coefficients as a function of the orbital angular momentum quantum number shows a peak at l = 5. The total dielectronic recombination rate coefficient was derived as a function of electron temperature. The dielectronic satellite lines were also obtained. The state selective dielectronic recombination rate coefficients to excited states of B-like neon were obtained, which are useful for modeling Ne VI spectral lines in a recombining plasma.  相似文献   

17.
The pulse height defect (PHD) of slow, highly charged 12C, 16O, 40Ar and 84Kr ions in a passivated implanted silicon detector has been measured. The detector is part of the channeling setup at the Frankfurt ECR/RFQ installation for beams of highly charged ions. In this experiment the modification of the charge states under channeling conditions in thin silicon membranes is measured. The charge states of the scattered ions are separated by post-acceleration. The PHD is an important input for the energy calibration. It allows the analysis via a parametrization which relates it to the true energy and the order number of the ions through a simple power law.  相似文献   

18.
精确可靠的屏蔽设计是保证核装置安全性的重要组成部分,离散纵标法是应用最广泛的确定论屏蔽计算方法。对于角通量密度各向异性较强的屏蔽问题,求积组精度不足会导致离散误差较大,严重影响屏蔽计算的准确性与可靠性。本文结合间断有限元思想,构造正二十面体线性及二次间断有限元离散求积组,并优化求积组权重及方向保证权重严格非负。采用球谐函数数值积分及IRI-TUB基准题验证求积组的计算精度与适应性。数值结果表明,二十面体线性间断有限元离散求积组在1/20球面内能准确积分对应0阶和1阶球谐函数,且具有4阶收敛性;对于IRI-TUB基准题,反应率计算值与实验测量值的相对偏差小于25%。二十面体间断有限元离散求积组能适用于角通量密度各向异性较强的屏蔽问题,从而提高屏蔽计算的可靠性。  相似文献   

19.
针对文献提出的用于换料方案快速评价的低阶谐波展开法,提出用一阶微扰方法来替代原先经验性的扰动基函数产生方法,从而使低阶谐波展开法的理论更完善、适用性更广、精度更高。  相似文献   

20.
The steady-state response of structures to harmonic excitation is of both direct and indirect importance. Such a response is of obvious direct importance in problems which involve excitation from rotating machinery or other sources of steady harmonic excitation. It is also of indirect importance in problems involving transient excitation where knowledge of the harmonic response may be used in estimating and interpreting the transient structural response. For example, the “effective” natural frequencies, damping ratios and mode shapes identified from full-scale harmonic tests of structures are often used to interpret the transient non-linear response of these structures to earthquakes. The non-linearity is confined to the connection between the structure and the moving base. This system might be a highly idealized model for a reactor structure including non-linear seismic isolation effects.In this paper a phase resonance method is given for damping characteristic identification of the nonlinear device seismic isolation in the harmonic excitation case. The method allows the shape of the symmetric function of the system to be determined, when is not known. If Fd(x) is asymmetric then the elasticity characteristic should be known.The identification algorithm has been derived assuming that Fd(x) is given in an analytic form. The validity of the method was checked for some systems with strongly nonlinear damping characteristics.  相似文献   

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