导体球涂覆各向异性铁氧体介质电磁散射的解析解

该文用球矢量波函数对各向异性铁氧体介质涂覆导体球的电磁散射解析解开展研究。各向异性铁氧体介质中电磁场的球矢量波函数解可表示成第一、二、三、四类球矢量波函数之和。根据球Bessel函数的性质,可以得出导体球涂覆各向异性铁氧体介质的球矢量波函数解析解。应用铁氧体与自由空间分界面上电磁场切向连续和在导体球面上切向电场等于零的边界条件以及球矢量波函数切向正交性质,可分别得出铁氧体介质中电磁场和散射场的展开系数。给出了平面波入射情况下的数值计算结果。该文的结果可应用于有关微波器件、天线以及目标特征的分析和计算。     

两层旋电磁介质球电磁散射的球矢量波函数解

在均匀旋电磁介质球矢量波函数的基础上,利用球Bessel函数的特性,给出了两层旋电磁介质球内的电磁场用波函数表示的表达式.在平面波入射情况下,应用电磁场在球边界上切向电场和磁场连续与远区辐射条件,导出了两层各向异性旋电磁介质中电磁场用矢量波函数表示的展开函数所满足的方程组,求出了两层旋电磁介质球的散射场用均匀各向同性波函数展开的展开系数,进而得出了两层旋电磁介质球对平面波的电磁散射特性.理论分析和数值计算的结果表明:当两层旋电磁介质球的媒质参数相同时,本文所得的结果可退化为单层各向异性旋电磁体解析解.     

单轴各向异性球对任意方向入射平面波的散射

基于球矢量波函数的正交完备性,给出了具有任意传播方向两种极化模式的平面波用球矢量波函数展开的形式,导出了其展开系数的具体表达式.研究了单轴各向异性介质球对任意方向入射平面波的散射,利用球矢量波函数及傅里叶变换方法得到了各向异性介质球的内场展开式,结合切向连续边界条件给出了散射系数.数值分析了介电常数张量元、有耗、无耗、尺寸参数、入射角和方位角等对单轴各向异性介质球的雷达散射截面的影响.     

两层各向异性介质球电磁散射球矢量波函数解

在无源各向异性铁氧体和等离子体介质的球矢量波函数基础上,利用第一、二类球Bessel 满足相同的微分方程和递推关系,给出了各向异性铁氧体球涂覆均匀等离子介质对平面波散射的理论公式,并给出数值计算的结果,预计本文结果可应用于微波器件以及目标特性等领域。     

两同心各向异性等离子体球电磁散射的解析解

利用各向异性等离子体介质的电磁场满足各向异性等离子体球矢量波函数的条件，根据球Bessel函数的特点，分别给出两同心各向异性等离子体介质的球矢量波函数的解析表达式。在此基础上，应用电磁场在球边界上切向电场和磁场连续和远区辐射条件，导出在平面波入射情况下，两同心各向异性等离子体介质本征函数解的展开系数。理论分析和数值计算的结果表明：当两同心等离子体球媒质参数相同时，本文所得的结果可退化为单层各向异性等离子体解析解。同时数值计算还给出了本方法与矩量法-共扼梯度-傅立叶变换(MOM-CG-FFT)的比较结果，两者符合较好。     

多层各向异性等离子体球电磁散射的解析解

给出s层各向异性等离子体球电磁场球矢量波函数解析表达式,应用电磁场在(s-1)层球壳边界上切向电磁场连续以及辐射条件,导出了平面波入射情况下,s层等离子体球电磁场的展开系数。将数值计算结果分别与矩量法-共扼梯度-傅里叶变换(MOM-CG-FFT)计算结果和均匀等离子体球的结果进行了比较,符合得较好。该文研究结果预期可应用于新型天线的研制和卫星通信等领域。     

偏心球对贝塞尔波束的散射特性研究

基于广义洛伦兹米理论,研究了偏心球粒子对在轴入射零阶贝塞尔波束的散射。利用球矢量波函数展开,给出了空间各区域电磁场的展开形式以及远场散射场表达式,并利用电磁场的边界条件,给出了各系数关系形式。通过与面积分方程方法的数值结果对比,验证了理论的正确性。数值分析了波束锥型角、偏心球内核介质折射系数、偏心距、内核半径等波束、偏心球参数对远场散射的影响。     

求解埋入体电磁散射问题的矢量波函数展开法

本文利用矢量波函数展开法求解了任意激励原埋入体的电磁散射问题。通过导出圆柱和圆球矢量波函数的转换关系,使场量满足分界平面和数学球面边界条件,从而方便地利用矢量波函数展开求解了这一复杂边值问题。作为示例,本文计算了在平面波和偶极子激励下,埋入导体球和介质球的散射场。     

在轴零阶贝塞尔波束对手征介质球的散射特性分析

贝塞尔波束自产生以来,凭借其无衍射、自修复特性已经获得了越来越多学者的关注。基于广义洛伦兹米理论, 将在轴贝塞尔波束与手征介质球相互作用的入射场及散射场展开为球矢量波函数的表达式。结合球矢量波函数的正交完备性及电磁场的连续性边界条件,推导出了在轴零阶贝塞尔波束对手征介质球电磁散射的解析解。数值模拟了散射强度随散射角的分布,将在轴贝塞尔波束退化为平面波照射手征介质球的散射结果与文献比较,吻合得较好。分析了波束及介质球参数、介质球偏离波束中心位置对散射强度的影响。该理论为手征材料和手征涂覆目标在微波工程及目标隐身中的应用提供了很好的理论应用价值。     

涂覆各向异性复合手征介质的阻抗圆柱体的雷达截面积

本文解决了平面波入射时涂覆各向异性复合手征介质的阻抗圆柱体的电磁散射问题。首先推导得到各向异性复合手征介质层中电磁场量的基本方程;然后根据边界条件得出计算所讨论的阻抗圆柱体的雷达散射截面的解析表达式。文中还给出若干数值结果。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.