基于网络处理器的VxWorks高层协议栈开发

主要介绍如何在运行VxWorks操作系统的IXP1200网络处理器上开发网络层协议栈驱动程序和VxWorks的基本情况,然后介绍VxWorks中网络层驱动与MUX接口和END驱动之间的关系,并分析伪以太网驱动程序的工作原理,讨论了网络处理器微引擎程序的设计与实现方法.     

集成以太网接口的压力检测仪表设计与实现

采用集成了以太网控制器的PIC 18F97J60高性能单片机,提出并实现了一种新型的集成以太网接口的压力检测仪表.根据PIC18F97J60单片机的特点和工作原理,设计了压力传感器信号调理电路、Butterworth低通滤波器电路和以太网接口电路,开发了基于以太网协议栈的应用程序.实际使用表明,该压力检测仪表可以直接接入以太网,实现了兼容TCP/IP协议和UDP协议两种报文格式的压力检测数据实时在线读取与网络传输功能.     

基于WIND NET框架的PPP同步串口通信的设计与实现

当今网络发展迅速,异种设备互联的需求也日益显著。针对各种形式网络路由设备互联的需要,选用开放标准的PPP协议作为链路层协议,介绍了基于VxWorks操作系统的WIND NET PPP协议栈,分析了PPP协议建立连接的基本流程以及协议帧封装格式。在此基础上,选择利用MPC8280通信处理器设计开发板,搭载嵌入式VxWorks操作系统,修改基于VxWorks操作系统的WIND NET PPP协议栈源码,使适用于同步串口数据通信,利用SP3508多协议接口芯片完成开发板与目标路由器之间的接口协议转换操作,实现了互联互通。最后给出了方案的可行性验证,测试结果表明:通信畅通,连通状况良好,可靠性高。     

基于VxWorks网络文件传输安全性的研究

在深入剖析TCP/IP协议栈和嵌入式操作系统VxWorks的基础上,提出一种基于VxWorks操作系统网络文件传输安全性考虑的实现方案。在应用层加入认证算法和加密算法,来实现传输数据的完整性和保密性。文中阐述了实现文件传输安全的设计思路以及各模块的功能及实现方法。     

基于TCP/IP的IND网络接口设计

IND是一种基于ARM uClinux的新型网络存储结构,它具有独立的文件系统和协议处理机制。探讨了IND存储系统结构和数据访问原理,并在此基础上分析了IND接口设计思想,通过对socket编程实现了INDTCP/IP协议栈。试验结果显示,智能网络磁盘有助于避免单点故障,能够显著地提高数据文件的传输效率。     

基于DM642的以太网通信接口设计

基于TI公司数字媒体DSP芯片DM642,设计并实现了以太网通信软硬件接口。采用DM642片内集成的以太网接口模块EMAC/MDIO,结合片外Intel LXT971 PHY芯片,在嵌入式操作系统DSP/BIOS架构上,运用网络开发包NDK提供的TCP/IP协议栈,实现了底层硬件驱动程序的编制及其协议栈接口,完成了视频信息的以太网传输。     

基于SPCE3200嵌入式视频监控系统设计

选用32位多媒体微处理器SPCE3200和eCos操作系统设计了嵌入式视频监控系统,通过以太网接口和TCP1IP协议栈实现远程网络传输,USB1.1接口扩展图像信息存储空间.重点介绍了硬件结构和eCos系统的配置和移植.测试证明该系统稳定、可靠.     

基于ARM的嵌入式TCP／IP协议的实现

分析嵌入式TCP/IP协议的选取原则,采用ARM芯片和网络接口控制芯片设计以太网接口,介绍ARM芯片对网络接口控制芯片的控制过程和TCP/IP协议栈处理数据包的流程,完成嵌入式TCP/IP系统的开发.该系统可以将数据按网络协议处理,实现数据的以太网传输.其是一套基于嵌入式实时操作系统的嵌入式网络软件开发平台,即在μC/OS-Ⅱ的平台上,实现ARM微处理器的TCP/IP协议,在此平台之上,可以方便地进行嵌入式应用系统的开发.     

基于串口的处理器间通信方式的研究与实现

为了保证双处理器间数据通信的稳定可靠,兼顾实现方式的低成本和易移植,本文提出了在串口通信中引入TCP/IP协议栈来实现处理器间的通信。在该方式的实现过程中解决了上层协议栈和串口驱动之间的数据交换问题和物理串口传输以太网数据问题。文章具体分析了该通信方式的实现原理,并讨论了上层协议栈接口、串口驱动、串口分帧的设计以及具体实现过程。     

基于协议栈数字机顶盒VoIP终端的设计与实现

介绍并分析SIP开源协议栈OSIP,EXOSIP,RTP开源协议栈ORTP的原理和运行机制.并在此基础上,设计并实现了一个基于SIC8008数字机顶盒芯片为硬件平台、Linux为操作系统的VoIP终端.该终端通过一个10/100 Base-T的RJ-45以太网接口直接连接互联网来实现和其他VoIP终端的通话.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.