Crystallization Mechanism of CVD Si3N4–SiCN Composite Ceramics Annealed in N2 Atmosphere and Their Excellent EMW Absorption Properties

To tailor a new electromagnetic wave (EMW) absorbing material with lower reflection coefficient (RC) and larger operating frequency band, the CVD Si₃N₄–SiCN composite ceramics were prepared from SiCl₄–NH₃–C₃H₆–H₂–Ar system and then annealed at the temperatures of 1400–1700°C in N₂ atmosphere. Effect of the annealing temperatures on the microstructure, phase composition, permittivity, and microwave‐absorbing properties of the ceramic were investigated. Results showed that the CVD Si₃N₄–SiCN ceramics gradually crystallized into nanosized SiC grains, Si₃N₄ grains and graphite (T ≤ 1600°C), and then the grains grew up at T = 1700°C. The permittivity, dielectric loss, and electrical conductivity of as‐annealed CVD Si₃N₄–SiCN ceramics (T ≤ 1600°C) increased firstly due to the formation of conductivity and polarity network and the increase in nanograin boundary, and then decreased at 1700°C because of the growth of nanograins and the disappearance of nanograin boundary. The minimal RC and effective absorption bandwidth of the as‐annealed CVD Si₃N₄–SiCN ceramic at 1600°C was ?41.67 dB at the thickness of 2.55 mm and 3.95 GHz at the thickness of 3.05 mm, respectively, demonstrating that the totally crystallized CVD Si₃N₄–SiCN ceramic (T = 1600°C) had the superior microwave‐absorbing ability.     

Si3N4-BN-SiCN ceramics with unique hetero-interfaces for enhancing microwave absorption properties

SiCN-based ceramics with broadband and strong microwave absorption properties are desired for the structural and functional integration of ceramic matrix composites. The elemental composition and thermal expansion coefficients of the ceramics matrix crucially affect its microstructure and electromagnetic wave (EMW) absorption properties. BN layer with lower electrical conductivity and higher specific area, exhibits both the impedance matching characteristic and EMW attenuation in the process of multiple reflections, electrical conductivity loss, dipole polarization and interfacial polarization. Therefore, Si₃N₄-BN-SiCN ceramics, which were synthesized using chemical vapor infiltration (CVI) method, construct unique hetero-interface of Si₃N₄-BN, Si₃N₄–SiCN and BN-SiCN. Therefore, the Si₃N₄-BN-SiCN ceramics have outstanding EMW absorption performance and realize an effective absorption bandwidth (EAB) that covers the whole X band and the minimum reflection coefficient (RC) reaches -18.43 dB at a thickness of 3.37 mm.     

Polymer-derived Co2Si(Co)/SiCN composite ceramics with tunable microwave absorption properties

In this paper, Co₂Si(Co)/SiCN composite ceramics were synthesized by simple precursor-derived ceramics method. The phase composition, morphology, and microwave absorption properties of Co₂Si(Co)/SiCN composite ceramics at different pyrolysis temperatures (1000–1400°C) were studied. When pyrolysis temperature was 1300°C, carbon nanowires (CNWs), Co₂Si, Si₂N₂O, SiC and Si₃N₄ were in situ generated and the best electromagnetic wave (EMW) absorption performance was obtained. The minimum reflection loss reached−50.04 dB at 4.81 mm, and the effective absorption bandwidth broadened to 3.48 GHz (14.52–18 GHz) at 1.31 mm. The excellent EMW absorption performance mainly comes from the coexistence of multiple loss mechanisms, including the magnetic loss of Co₂Si, the conduction loss of CNWs, and the heterogeneous interfaces polarization between varieties of nanocrystals and amorphous ceramic matrix. By adjusting the sample thickness from 1 to 5 mm, the effective absorption of S1300 can cover the entire X and Ku bands, from 3.36 to 18 GHz. This study provides a simple way to synthesize high performance ceramic-based microwave absorbing materials.     

Dielectric properties of Si3N4–SiCN composite ceramics in X-band

Si₃N₄–SiCN composite ceramics were successfully fabricated through precursor infiltration pyrolysis (PIP) method using polysilazane as precursor and porous Si₃N₄ as preform. After annealed at temperatures varying from 900 °C to 1400 °C, the phase composition of SiCN ceramics, electrical conductivity and dielectric properties of Si₃N₄–SiCN composite ceramics over the frequency range of 8.2–12.4 GHz (X-band) were investigated. With the increase of annealing temperature, the content of amorphous SiCN decreases and that of N-doped SiC nano-crystals increases, which leads to the increase of electrical conductivity. After annealed at 1400 °C, the average real and imaginary permittivities of Si₃N₄–SiCN composite ceramics are increased from 3.7 and 4.68 × 10^?3 to 8.9 and 1.8, respectively. The permittivities of Si₃N₄–SiCN composite ceramics show a typical ternary polarization relaxation, which are ascribed to the electric dipole and grain boundary relaxation of N-doped SiC nano-crystals, and dielectric polarization relaxation of the in situ formed graphite. The Si₃N₄–SiCN composite ceramics exhibit a promising prospect as microwave absorbing materials.     

Microstructure and EMW absorbing properties of SiCnw/SiBCN-Si3N4 ceramics annealed at different temperatures

SiC nanowire/siliconboron carbonitride-Silicon nitride (SiC_nw/SiBCN-Si₃N₄) ceramics were prepared via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI) technique. The as-prepared ceramics were annealed at varying temperatures (1200–1600 °C) in a N₂ atmosphere, and their crystallization mechanism and absorbing properties were subsequently studied. The absorbing properties of the SiC_nw/SiBCN-Si₃N₄ ceramics improved with the annealing temperature up to a certain value and decreased thereafter. Among the samples tested, the SiC_nw/SiBCN-Si₃N₄ ceramics annealed at 1300 °C showed the highest permittivity (real and imaginary parts) and dielectric loss values in the X-band (ca. 5.34, 2.55, and 0.47 respectively), and this could be attributed to the precipitation of carbon and SiC nanocrystals. The sample treated at 1300 °C decreased its minimum reflection coefficient (RC) from −12.0 to −59.68 dB (compared with the as-received SiC_nw/SiBCN-Si₃N₄ ceramics) and the effective RC (below -10 dB) in the whole X-band could be achieved when the thickness was set to 3–3.5 mm. These results revealed that the absorbing performance was significantly improved after the heat treatment at 1300 °C.     

Sandwich structure SiCf/Si3N4–SiOC–Si3N4 composites for high-temperature oxidation resistance and microwave absorption

SiC fiber reinforced ceramic matrix composites (SiC_f-CMCs) have been widely used as structural-functional materials at high temperatures. However, their mechanical and electromagnetic wave (EMW) absorbing properties will deteriorate due to high-temperature oxidation. Therefore, unique sandwich structure, consisting of inner Si₃N₄ impedance layer, middle porous SiOC loss layer and dense oxidation-resistant Si₃N₄ layer, was proposed to enhance multiple material properties in oxidation environment. Herein, SiC_f/Si₃N₄–SiOC–Si₃N₄ composites was fabricated by alternating chemical vapor infiltration (CVI) and polymer infiltration pyrolysis (PIP) methods. For these composites, SiC fiber is used as both reinforcing phase and electromagnetic (EM) absorber. CVI Si₃N₄ matrix was distributed in inner and outer layer of the SiC_f/Si₃N₄–SiOC–Si₃N₄ composites. While inner Si₃N₄ layer between BN interphase and SiOC matrix forms nano-heterogeneous interphase to consume EM energy and enhance mechanical properties of composites, outer dense and oxidation-resistant CVI Si₃N₄ coating serves to maintain properties. PIP SiOC matrix exhibits porous structure that can effectively deflect cracks and achieve multiple scattering of EMW. SiC_f/Si₃N₄–SiOC–Si₃N₄ composites with sandwich structure demonstrated excellent EMW absorbing properties and mechanical performance in high-temperature oxidation environments.     

Theoretical prediction and experimental verification on EMI shielding effectiveness of dielectric composites using complex permittivity

The evaluation and optimization of EMW absorbing properties have been widely studied, but little research focused on EMI shielding properties predicted by complex permittivity. Based on the transmission-line theory, shielding effectiveness (SE) of a dielectric composite was evaluated by the reflection coefficient (Г) and transmission coefficient (T) which were calculated by the complex permittivity. SiC_f/SiCN composites containing different content of CVI SiCN matrix are attractive for their tunable dielectric properties, which may vary from EMW absorption to EMI shielding. Therefore, SiC_f/SiCN composites are typical dielectric composites used for experimental verification, and the results indicate that the dielectric composites without CVI SiCN phase have good EMW absorbing properties, while they exhibit good EMI shielding effectiveness with CVI SiCN phase. This work builds a relationship between the EMI shielding effectiveness and the complex permittivity, and obtains the optimized complex permittivity for excellent EMI shielding effectiveness.     

Effect of BN content on microstructures,mechanical and dielectric properties of porous BN/Si3N4 composite ceramics prepared by gel casting

Porous BN/Si₃N₄ composite ceramics with different BN contents have been fabricated by gel casting. The rheological behaviors of the suspensions, microstructure, mechanical properties, dielectric properties and critical temperature difference of thermal shock (ΔT_C) of porous BN/Si₃N₄ composite ceramics with different BN contents were investigated. With BN contents increasing, the mechanical properties of the porous BN/Si₃N₄ composite ceramics were partially declined, but the dielectric properties and thermal shock resistances were enhanced at the same time. For the porous Si₃N₄ ceramic without BN addition, the porosity, flexural strength, dielectric constant and critical temperature difference were 48.1%, 128 MPa, 4.1 and 395 °C, while for the 10 vol% BN/Si₃N₄ porous composite ceramics, they were 49.4%, 106.6 MPa, 3.8, and 445 °C, respectively. The overall performance of the obtained porous BN/Si₃N₄ composite ceramics indicated that it could be one of the ideal candidates for high-temperature wave-transparent applications.     

Effect of SiBCN content on the dielectric and EMW absorbing properties of SiBCN-Si3N4 composite ceramics

Siliconboron carbonitride ceramics (SiBCN) were introduced into porous Si₃N₄ substrates via low pressure chemical vapor deposition and infiltration from SiCl₃CH₃-NH₃-BCl₃-H₂-Ar system. To improve the electromagnetic wave(EMW) absorbing properties, the molar ratio, n_CH3SiCl3/(n_NH3 + n_BCl3), was increased based on thermodynamics analysis. The results show that nanosized silicon carbide crystals and free carbon dispersed uniformly in the amorphous SiBCN phase, resulting in suitable dielectric properties and improved absorption capabilities of SiBCN-Si₃N₄ ceramics. Additionally, with increasing SiBCN ceramics loading, the amount of nanocrystals and interface between nanocrystals and amorphous SiBCN phase increased, leading to enhanced polarization and dielectric loss of the composite ceramics. When SiBCN content was up to 3.64 wt%, the electromagnetic reflection coefficient (RC) of SiBCN-Si₃N₄ composite ceramics reached ?40 dB (>99.97% absorbing) with the effective electromagnetic absorbing bandwidth of 3.64 GHz in the X-band. This study makes it possible to fabricate SiBCN-based composite materials with excellent EMW absorbing properties at a low temperature.     

Porous SiC–Si3N4 composite ceramics with excellent EMW absorption property prepared by gelcasting using DMAA

The porous SiC–Si₃N₄ composite ceramics with good EMW absorption properties were prepared by combination of gelcasting and carbothermal reduction. The pre-oxidation of Si₃N₄ powders significantly improved the rheological properties of slurries (0.06 Pa s at 103.92 s⁻¹) and also suppressed the generation of NH₃ and N₂ from Si₃N₄ hydrolysis and reaction between Si₃N₄ and initiator APS, thereby reducing the pore defects in green bodies and enhancing mechanical properties with a maximum value of 42.88 MPa. With the extension of oxidation time from 0 h to 10 h, the porosity and pore size of porous SiC–Si₃N₄ composite ceramics increased from approximately 41.86% and 1.0–1.5 μm to 46.33% and ~200 μm due to the production of CO, N₂ and gaseous SiO, while the sintering shrinkage decreased from 16.24% to 10.50%. With oxidation time of 2 h, the Si₂N₂O fibers formed in situ by the reaction of Si₃N₄ and amorphous SiO₂ effectively enhanced the mechanical properties, achieving the highest flexural strength of 129.37 MPa and fracture toughness of 4.25 MPa m^1/2. Compared with monolithic Si₃N₄ ceramics, the electrical conductivity, relative permittivity and dielectric loss were significantly improved by the in-situ introduced PyC from the pyrolysis of three-dimensional network DMAA-MBAM gel in green bodies and the SiC from the carbothermal reduction reaction between PyC and SiO₂ and Si₃N₄. The porous SiC–Si₃N₄ composite ceramics prepared by the unoxidized Si₃N₄ powders demonstrated the optimal EMW absorption properties with reflection loss of −22.35 dB at 8.37 GHz and 2 mm thickness, corresponding to the effective bandwidth of 8.20–9.29 GHz, displaying great application potential in EMW absorption fields.     

Temperature-dependent mechanical and oxidation behavior of in situ formed ZrN/ZrO2-containing Si3N4-based composite

In this work, Si₃N₄ and Zr(NO₃)₄ were used as raw materials to prepare ZrN/ZrO₂-containing Si₃N₄-based ceramic composite. The processing, phase composition, and microstructure of the composite were investigated. Hardness and fracture toughness of the ceramics were evaluated via Vickers indentation in Ar at 25°C, 300°C, 600°C, and 900°C. During spark plasma sintering, Zr(NO₃)₄ was transformed into tetragonal ZrO₂, which further reacted with Si₃N₄, resulting in the formation of ZrN. The introduction of ZrN enhanced the high-temperature mechanical properties of the composite, and its hardness and fracture toughness reached 13.4 GPa and 6.1 MPa·m^1/2 at 900°C, respectively. The oxidation experiment was carried out in air at 1000°C, 1300°C, and 1500°C for 5 h. It was shown that high-temperature oxidation promoted the formation and growth of porous oxide layers. The microstructure and phase composition of the formed oxide layers were investigated in detail. Finally, it was identified that the obtained composite exhibited a higher thermal diffusivity than that of monolithic Si₃N₄ in the temperature range of 100°C–1000°C.     

Effects of heat treatment on mechanical and dielectric properties of 3D Si3N4f/BN/Si3N4 composites by CVI

In this study, three-dimensional silicon nitride fiber-reinforced silicon nitride matrix (3D Si₃N_4f/BN/Si₃N₄) composites with a boron nitride (BN) interphase were fabricated through chemical vapor infiltration. Through comparing the changes of microstructure, thermal residual stress, interface bonding state, and interface microstructure evolution of composites before and after heat treatment, the evolution of mechanical and dielectric properties of Si₃N_4f/BN/Si₃N₄ composites was analyzed. Flexural strength and fracture toughness of composites acquired the maximum values of 96 ± 5 MPa and 3.8 ± 0.1 MPa·m^1/2, respectively, after heat treatment at 800 °C; however, these values were maintained at 83 ± 6 MPa and 3.1 ± 0.2 MPa·m^1/2 after heat treatment at 1200 °C, respectively. The relatively low mechanical properties are mainly attributed to the strong interface bonding caused by interfacial diffusion of oxygen and subsequent interfacial reaction and generation of turbostratic BN interphase with relatively high fracture energy. Moreover, the Si₃N_4f/BN/Si₃N₄ composites also displayed moderate dielectric constant and dielectric loss fluctuating irregularly around 5.0 and 0.04 before and after heat treatment, respectively. They were mainly determined based on the intrinsic properties of materials system and complex microstructure of composites.     

Effects of heat treatment on mechanical properties of 3D Si3N4f/BN/Si3N4 composites by PIP

The fabrication of three-dimensional silicon nitride (Si₃N₄) fiber-reinforced silicon nitride matrix (3D Si₃N_4f/BN/Si₃N₄) composites with a boron nitride (BN) interphase through precursor infiltration and pyrolysis (PIP) process was reported. Heat treatment at 1000–1200 °C was used to analyze the thermal stability of the Si₃N_4f/BN/Si₃N₄ composites. It was found after heat treatment the flexural strength and fracture toughness change with a pattern that decrease first and then increase, which are 191 ± 13 MPa and 5.8 ± 0.5 MPa·m^1/2 respectively for as-fabricated composites, and reach the minimum values of 138 ± 6 MPa and 3.9 ± 0.4 MPa·m^1/2 respectively for composites annealed at 1100 °C. The influence mechanisms of the heat treatment on the Si₃N_4f/BN/Si₃N₄ composites include: (Ⅰ) matrix shrinkage by further ceramization that causes defects such as pores and cracks in composites, and (Ⅱ) prestress relaxation, thermal residual stress (TRS) redistribution and a better wetting at the fiber/matrix (F/M) surface that increase the interfacial bonding strength (IBS). Thus, heat treatment affects the mechanical properties of composites by changing the properties of the matrix and IBS, where the load transfer efficiency onto the fibers is fluctuating by the microstructural evolution of matrix and gradually increasing IBS.     

Self-propagating high temperature synthesis (SHS) of porous Si3N4-based ceramics with considerable dimensions and study on mechanical properties and oxidation behavior

The aim of present work is to fabricate porous Si₃N₄ ceramics with considerable dimensions and homogeneous microstructure by self-propagating high temperature synthesis (SHS) using Si, Si₃N₄ diluent and Y₂O₃ as raw materials. The results indicate that Si₃N₄ diluent with coarse particle sizes and appropriate β-phase content is beneficial to obtain porous Si₃N₄ ceramics with homogeneous microstructure and excellent mechanical property by controlling the shrinkage inside the sample. The produced Si₃N₄ ceramics possessed excellent flexural strength of 168 MPa～259 MPa, and high Weibull modulus of 11.0～17.2. Additionally, BN and SiC are added as second phase to modify the properties of Si₃N₄-based ceramics. Optimum flexural strength of 170 MPa and 137 MPa were obtained with 10 wt.% addition of BN and SiC respectively. After oxidation at 1100 °C～1300 °C, second phase-doped Si₃N₄ ceramics also presented higher residual strength than pure Si₃N₄ ceramics.     

Microstructure and electromagnetic wave absorption property of reduced graphene oxide-SiCnw/SiBCN composite ceramics

In this account, RGO-SiC_nw/SiBCN composite ceramics were fabricated using polymer derived ceramic (PDC) combined with chemical vapor infiltration (CVI) technology. Dielectric property of as-obtained RGO-SiC_nw/SiBCN composite ceramics was significantly enhanced thanks to established conductive pathway through overlapped nanoscale SiC_nw and micro-sized RGO. The minimum RC of composite ceramics with 0.5 wt% GO and 2.29 wt% SiC_nw at thickness of 3.6 mm reached -42.02 dB with corresponding effective absorption bandwidth (EAB) of 4.2 GHz. As temperature rose from 25 to 400 °C, permittivity increased with enhanced charge carrier density and then it decreased due to oxidation process of RGO from 400 to 600 °C. The minimum reflection coefficient (RC) was recorded as -39.13 dB and EAB covered the entire X-band at 600 °C. EMW absorption ability was evaluated after high-temperature oxidation experiment under protective effect of wave-transparent Si₃N₄ coating. RGO-SiC_nw/SiBCN composite ceramics maintained outstanding EMW absorption ability with minimum RC of -10.41 dB after oxidation at 900 °C, indicating RGO-SiC_nw/SiBCN composite ceramics with excellent EMW absorption characteristic even at high temperatures and harsh environments.     

Construction of Si3N4/SiO2/SiC–Y2Si2O7 composite ceramics with gradual impedance matching structure for high-temperature electromagnetic wave absorption

Good impedance matching is vital in upgrading the performance of electromagnetic (EM) wave-absorbing materials. In this study, Si₃N₄/SiO₂/SiC–Y₂Si₂O₇ composite ceramics were synthesized by sintering and chemical vapor infiltration (CVI) technology with gradual impedance matching. The relationship between the microstructure of the as-prepared composite ceramics and EM wave absorption characteristics was thoroughly explored. It was found that the amorphous Si₃N₄, SiO₂, and SiC layers were constructed with a gradual impedance matching structure, which not only improved impedance matching but also increased the number of nano interfaces. More importantly, SiC nanocrystals effectively increased the conduction loss, and the presence of defects and nanoscale heterogeneous interfaces further increased the polarization loss. Consequently, the as-prepared composite ceramics displayed enhanced EM wave absorption properties, with a minimum reflection coefficient (RC_min) value of less than ?20 dB over a temperature range of 25 °C (RT)-300 °C, and an effective absorption bandwidth (EAB) maintained at 4.2 GHz with the thickness range of 3.75–4.75 mm. These results demonstrated the practical significance of high-performance EM wave absorption materials that can be applied in high-temperature and water vapor environments.     

Effects of pore diameters on phase,oxidation resistance,and thermal shock resistance of the porous Si2N2O ceramics

Porous silicon oxynitride (Si₂N₂O) ceramics were prepared by gas pressure sintering at 1650°C for 2 hour under 1.5 MPa N₂ in two different powder beds, that is, h‐BN/Si₃N₄ or h‐BN/(Si₃N₄ + SiO₂). Effects of the gaseous atmosphere in the powder bed and the pore diameter in the ceramics on formation of the Si₂N₂O phase and the oxidation resistance of the sintered porous ceramics were investigated. Results showed that presence of the gaseous SiO in the powder bed played a crucial role in suppressing decomposition of the Si₂N₂O phase at the outer surface of the material. Permeability of the gaseous substances was decreased when the pore diameter was small, to affect the phase composition and the oxidation behavior of the porous Si₂N₂O ceramics. The oxidation weight gain curves of the porous Si₂N₂O ceramics fitted the asymptotic law. No significant changes in the dielectric constant of the Si₂N₂O ceramics were observed after oxidation at 1000°C‐1200°C for up to 30 minutes, whereas the dielectric loss tangent was reduced by oxidation due to formation of SiO₂. The as‐obtained porous Si₂N₂O ceramics could withstand a highest thermal shock of 1200°C when the outer surface could be sealed by the oxidation‐derived SiO₂ layer.     

Influence of hBN content on mechanical and tribological properties of Si3N4/BN ceramic composites

Silicon nitride materials containing 1–5 wt% of hexagonal boron nitride (micro-sized or nano-sized) were prepared by hot-isostatic pressing at 1700 °C for 3 h. Effect of hBN content on microstructure, mechanical and tribological properties has been investigated. As expected, the increase of hBN content resulted in a sharp decrease of hardness, elastic modulus and bending strength of Si₃N₄/BN composites. In addition, the fracture toughness of Si₃N₄/micro BN composites was enhanced comparing to monolithic Si₃N₄ because of toughening mechanisms in the form of crack deflection, crack branching and pullout of large BN platelets. The friction coefficient was not influenced by BN addition to Si₃N₄/BN ceramics. An improvement of wear resistance (one order of magnitude) was observed when the micro hBN powder was added to Si₃N₄ matrix. Mechanical wear (micro-failure) and humidity-driven tribochemical reaction were found as main wear mechanisms in all studied materials.     

A high-temperature structural and wave-absorbing SiC fiber reinforced Si3N4 matrix composites

The SiC_f/Si₃N₄ composite with low–high–low permittivity sandwich structure was designed for high-temperature electromagnetic (EM) wave absorption and mechanical stability. The SiC_f/Si₃N₄ possessed the remarkable mechanical properties at room temperature (the flexural strength is 357 ± 16 MPa and the fracture toughness is 10.8 ± 1.7 MPa m^1/2) for the strong fiber strength, moderate interface bonding strength and uniform matrix. Furthermore, the retention rate is as high as 80% at 800 °C. The A/B/C nanostructure and the sandwich meta-structure endowed the SiC_f/Si₃N₄ with an excellent EM absorbing property at room temperature. The SiC_f/Si₃N₄ still absorbed 75% of the incident EM waves energy in X and Ku bands when the temperature increases up to 600 °C, which is only 6% lower than that at room temperature, for the partial compensation of the decreased interfacial polarization loss for the increased conductivity loss and dipole polarization loss.     

Dielectric and microwave absorption properties of polymer derived SiCN ceramics annealed in N2 atmosphere

Porous SiCN ceramics were successfully fabricated by pyrolysis of a kind of polysilazane. The effects of annealing temperature on the microstructure evolution, direct-current electrical conductivity, dielectric properties, and microwave absorption properties of SiCN in the frequency range 8.2–12.4 GHz (X-band) were investigated. With the increase of annealing temperature, SiC, Si₃N₄ and free carbon nanodomains are gradually formed in the SiCN. Both the SiC and free carbon nanodomains lead to the increases of the complex relative permittivity and loss tangent of SiCN. With the increase of the annealing temperature, the average real permittivity, imaginary permittivity and loss tangent increase from 4.4, 0.2 and 0.05 to 13.8, 6.3 and 0.46, respectively. The minimum reflection coefficient and the frequency bandwidth below −10 dB for SiCN annealed at 1500 °C are −53 dB and 3.02 GHz, indicating good microwave absorption properties.