Novel seed-assisted synthesis of indium tin oxide submicro-cubes and their resistivity

Indium tin oxide films, an important n-type semiconductor oxide, show great prospects in optoelectronic device applications. Consequently, as a key raw material of targets for sputtering films, it is important to prepare low-resistivity indium tin oxide powders. Herein, low-resistivity indium tin oxide submicro-cubes are synthesized by a seed-assisted coprecipitation method. The effects of seed content, In³⁺ concentration, aging time, reaction temperature and calcination temperature on resistivity were investigated by single factor and orthogonal experiments. To ensure reliability and reproducibility of data, each experiment was repeated three times and resistivity of each sample was measured three times to obtain average value. The results indicated that optimal sample was matched with cubic phase In₂O₃. The single-crystal indium tin oxide particles exhibited a regular cubic shape with a size of nearly 500 nm and low resistivity of 0.814 Ω·cm. Compared with particles prepared by the conventional coprecipitation method, indium tin oxide submicro-cubes showed good dispersion. The presence of seed particles provided nucleation sites with lower energy barriers and promoted formation of submicro-cubes. The face-to-face contact among particles and good dispersion contributed to electron transfer, resulting in lower resistivity. The seed-assisted synthesis provides a novel way to prepare low-resistivity indium tin oxide submicro-cubes.     

Comparative study of sol–gel derived tin-doped indium- and aluminum-doped zinc-oxide coatings for electrical conducting and low-emitting surfaces

Cost-efficient transparent conductive oxide (TCO) compounds based on doped zinc oxide (e.g. aluminum zinc oxide – AZO) have been investigated in addition to the well-established functional coatings of doped indium oxide (e.g. indium tin oxide – ITO). The electrical, morphological and optical properties of both types of coatings are compared. For the deposition of transparent conductive oxides, such as tin-doped indium oxide and aluminum-doped zinc oxide on soda-lime glass, enhanced sol–gel processes have been used. Colloidal solutions consisting of inorganic precursors were applied via dip-coating technique, crystallized on the substrate and subsequently annealed in a reducing atmosphere in order to enrich the number of free charge carriers and the electrical conductivity, respectively. In addition to the conventional layer properties like high transparency in the visible spectral region, this work mainly focuses on the comparison of the infrared-optical characteristics in the mid and far infrared spectral range. The directional-hemispherical reflectance and transmittance of functional ITO and AZO multilayer structures with thicknesses of 50–500 nm were measured in the wavelength range between 0.25 and 35 μm and the thermal emission at ambient temperature was calculated and correlated with the electrical layer properties and the doping level of the coatings. To gain further insights, important characteristics of the coatings, such as layer thickness, surface smoothness, electrical conductivity, doping level, band gap energy as well as the position of the plasma wavelength were analyzed using UV–VIS- and IR-spectroscopy, SEM-, EDX-, XRD- and 4-point conductivity measurements. Both types of the functional coatings are highly transparent in the visible spectral region with over 80% and their specific resistivity reaches values up to 3 × 10⁻⁴ Ω cm. By applying multilayered coatings on soda-lime glass, the surface emittance was reduced from 89% to less than 20% in the infrared spectral range.     

Plastic deformation of ZnO thin films through edge and screw dislocation movements

Columnar wurtzite grains were formed in sputtered ZnO thin films deposited on a plastic polyethylene terephthalate substrate. Selected-area diffraction patterns reveal that the columnar grains in the sputtered films present two preferred growth planes, namely, the basal (0002) and prismatic (100) growth planes. The diffraction patterns obtained also confirm that the microstructure of sputtered indium tin oxide thin films is amorphous in nature. Tensile tests indicate that the fracture strain of the ZnO thin film occurs between 1.73% and 2.14%, while the fracture strain of the indium tin oxide thin film occurs between 0.24% and 0.67%. Thus, the fracture toughness of the sputtered ZnO thin film is greater than that of the sputtered indium tin oxide thin film. High-resolution transmission electron microscopic images demonstrate that edge and screw dislocations could be identified in the sputtered ZnO thin films. Moreover, edge and screw dislocation movements may, respectively, be observed in the basal- and prismatic-oriented ZnO columnar grains of the sputtered ZnO thin films. Our results indicate that movements of the edge and screw dislocations in the basal- and prismatic-oriented ZnO columnar grains account for the plastic deformation of the investigated ZnO thin films under tensile stress.     

Synthesis of polypyrrole/indium tin oxide nanocomposites via miniemulsion polymerization

Polypyrrole/indium tin oxide nanocomposites were synthesized via in situ miniemulsion polymerization of pyrrole monomer in the presence of indium tin oxide nanoparticles. Different nanocomposites were synthesized by different loadings of nano indium tin oxide. The morphology and nanoparticles distribution of the nanocomposites were characterized by electron microscopy. The results of XRD and TEM analysis showed that indium tin oxide nanoparticles were well placed in the polymeric structure of latex. FTIR analysis was used for the characterization of synthesized polypyrrole and its nanocomposites. TGA analysis was performed to investigate the thermal behavior of pristine polypyrrole and its nanocomposites. Conductivities of nanocomposites were measured by 4-point probe method and compared to the neat polymer.     

从废ITO玻璃回收铟及制备高品质玻璃

为回收废弃LCD面板中的金属铟及高品质玻璃,提出了一种铟锡氧化物(ITO)玻璃资源化回收方法,用HF溶液浸蚀ITO玻璃碎片得富铟溶液和经表面除杂的玻璃基板,富铟溶液经蒸发、浓缩得富铟物,将富铟物溶解并经铝置换、熔炼、提纯得到粗铟,玻璃基板作为配合料进行再生制样. 结果表明,ITO玻璃破碎会造成铟流失,8 mol/L HF在3 h内即可有效回收ITO中的铟,制得纯度达92.3%的粗铟,回收率达89.2%. 再生玻璃试样成型温度为1462℃,热膨胀系数最大为3.2′10-6/℃,维氏硬度平均值为584.9,密度为2.43097 g/cm3,可见光透射比为75.2,部分性能有所下降,可降低配合料用量,以实现ITO玻璃基板的资源化回收.     

硫酸体系中P507对铟锌锰的萃取分离研究

根据软锰矿和闪锌矿在酸性条件下同槽浸出所得浸出液特点(含铟、锌、锰离子),用P507萃取浸出液中的铟,分离出锌和锰。考察了平衡水相酸度(氢离子浓度)、萃取剂体积分数、萃取温度、有机相与水相体积比、萃取时间等因素对铟萃取率的影响。研究结果表明:在室温下,在平衡水相酸度为2.5 mol/L、P507体积分数为30%(30%P507+70%磺化煤油)、有机相与水相体积比为1∶1、萃取时间为10 min条件下,铟的一级萃取率在99%以上,锌和锰一级萃取率在1.20%以下,铟与锌和锰的分离达到最佳效果;负载有机相经水洗,锌和锰洗涤率为99%,铟洗涤率为0;用2.0 mol/L盐酸进行反萃,铟反萃率在98%以上,达到了富集铟分离锌和锰的目的。     

Effect of heterojunction on photocatalytic properties of multilayered ZnO-based thin films

In the present study, the effects of the heterojunctions on the optical and structural characteristics and the resulting photocatalytic properties of multilayered ZnO-based thin films were investigated. The junctions were composed of semiconducting ZnO nano-porous films coated on the In₂O₃ and SnO₂ counterpart layers. The multilayered ZnO films based on the triple-layered Ag-doped indium oxide (AIO)/tin oxide (TO)/zinc oxide (ZnO), indium oxide (IO)/Ag-doped tin oxide (ATO)/zinc oxide (ZnO), indium oxide (IO)/tin oxide (TO)/zinc oxide (ZnO) and tin oxide (TO)/indium oxide (IO)/zinc oxide (ZnO) have been fabricated by subsequent sol–gel dip coating. Their structural and optical properties combined with photocatalytic characteristics were examined toward degradation of Solantine Brown BRL (C.I. Direct Brown), an azo dye using in Iran textile industries as organic model under UV light irradiation. Effects of operational parameters such as initial concentration of azo dye, irradiation time, solution pH, absence and presence of Ag doping and consequent of sublayers on the photodegradation efficiencies of ZnO nultilayered thin films were also investigated and optimum conditions were established. It was found that the photocatalytic degradation of azo dye on the composite films followed pseudo-first order kinetics. Photocatalytic activity of AIO/TO/ZnO interface composite film was higher compared with other films and the following order was observed for films activities: AIO/TO/ZnO > IO/TO/ZnO > ATO/IO/ZnO > TO/IO/ZnO. Differences in the film efficiencies can be attributed to differences in crystallinity, interfacial lattice mismatch, and surface morphology. Besides, the presence of Ag doping between layers that may act as trap for electrons generated in the ZnO over layer thus preventing electron–hole recombination.     

Indium tin oxide exhibiting high poly-crystallinity on oxygen plasma-treated polyethylene terephthalate surface

Low-resistivity indium tin oxide [ITO] film was successfully deposited on oxygen plasma-treated polyethylene terephthalate [PET] surfaces at room temperature. X-ray diffraction [XRD] measurements demonstrated that the film deposited on the PET surface that had not been treated with oxygen plasma had an amorphous structure. In contrast, after the low-power oxygen plasma treatment of the PET surface, the ITO film deposited on the PET surface had a poly-crystalline structure due to interactions between electric dipoles on the PET surface and electric dipoles in the ITO film. The minimum resistivity of the poly-crystalline ITO was about 3.6 times lower than that of the amorphous ITO film. In addition, we found that the resistivity of ITO film is proportional to the intensity of the (400) line in the film''s XRD spectra.     

Effects of Annealing Temperature on Microstructure and Electrical and Optical Properties of Radio-Frequency-Sputtered Tin-Doped Indium Oxide Films

Indium tin oxide (ITO) films (0.3 μm thick), with a doping level of 28 mol% SnO₂, were prepared by a radio frequency magnetron sputtering mehthod. The effects of postannealing on the microstructure and the electrical properties of the ITO films were investigated. The as-sputtered film showed an amorphous structure, whereas the films annealed at 350° and 510°C exhibited crystalline structures with grain sizes of 0.12 and 0.14 μm, respectively. Examination by TEM showed that the postannealing treatment induced SnO₂ precipitates along the grain boundaries. The resistivity increased with increasing postannealing temperatures. The mobility of carriers appears to be responsible for the resistivity increase in these specimens. The mobility change is discussed in connection with the SnO₂ precipitates.     

Transmission electron microscope observation of organic–inorganic hybrid thin active layers of light-emitting diodes

Low-resistivity indium tin oxide [ITO] film was successfully deposited on oxygen plasma-treated polyethylene terephthalate [PET] surfaces at room temperature. X-ray diffraction [XRD] measurements demonstrated that the film deposited on the PET surface that had not been treated with oxygen plasma had an amorphous structure. In contrast, after the low-power oxygen plasma treatment of the PET surface, the ITO film deposited on the PET surface had a poly-crystalline structure due to interactions between electric dipoles on the PET surface and electric dipoles in the ITO film. The minimum resistivity of the poly-crystalline ITO was about 3.6 times lower than that of the amorphous ITO film. In addition, we found that the resistivity of ITO film is proportional to the intensity of the (400) line in the film's XRD spectra.     

A PSS‐Free PEDOT Conductive Film Supported by a Hierarchical Nanoporous Layer Glass

The importance of transparent conductive film is increasing due to its use in applications such as touch‐panel devices. Although indium tin oxide is widely used because of its high conductivity and transparency, conductive polymers are being studied as alternative materials that avoid the use of rare metals and the brittleness associated with existing systems. Polyethylene dioxythiophene (PEDOT)/polyethylene sulfonic acid (PSS) is drawing a lot of attention due to its well‐balanced conductivity, transparency, film formability, and chemical stability. The nonconductive PSS reportedly covers the conductive PEDOT. The PSS shell provides carrier and film‐formability to PEDOT but is also a barrier that hinders electrical conductivity. Therefore, the PEDOT film formability is explored supported by a substrate without the addition of PSS. The “hierarchical nanoporous layer glass” holds the PSS‐free PEDOT with its nanopores to form a homogeneous, transparent film. The PSS‐free PEDOT film thus achieves transparency of over 85% and resistivity of below 500 Ω sq^?1.     

有机P－N结太阳能电池的研究

有机Ｐ－Ｎ结太阳能电池的研究董长征，王维波，蓝闽波，任绳武，肖绪瑞，周庆复，许慧君（华东理工大学，上海２００２３７）（中国科学院感光化学研究所，北京１００１０１）关键词有机太阳能电池，酞菁，红近年来，以有机化合物作为光电转换材料的研究报道很多￣［１～...     

Anodic behaviour of indium in sodium chloride solutions

Passive film growth, electrodissolution and pitting corrosion of indium electrodes in NaCl solutions in the pH range 2–12.6 were studied using potentiostatic and potentiodynamic techniques complemented with SEM. In the pH range between 10.5 and 12.6 the oxide formation should involve a mixed control, a surface reaction plus a diffusion process. On decreasing pH the process becomes more complex due to the formation of In(I). The effect of chloride ions upon the active and passive behaviour of indium has been determined. Chloride ions in neutral and alkaline solutions produce pitting at potential values more positive than those of the active—passive transition. Localized corrosion appears to be under a competitive surface mechanism involving the formation of the passive film and the nucleation and growth of an indium chloride salt layer.     

Fabrication of Low-Porosity Indium Tin Oxide Ceramics in Air from Hydrothermally Prepared Powder

Compositionally homogeneous indium tin oxide (ITO) ceramics with low porosity were obtained successfully by sintering hydrothermally prepared powders. The fabrication technique began with the preparation of microcrystalline, homogeneously tin-doped (5 wt%) indium oxyhydroxide powder, under hydrothermal conditions. Low-temperature (∼500°C) calcination of the hydrothermally derived powder led to the formation of a substitutional-vacancy-type solid solution of In₂Sn_{1− x} O_{5− y} , and further heating of this phase at temperatures of >1000°C resulted in the formation of the tin-doped indium oxide phase, which had the C -type rare-earth-oxide structure. The sintering of uniformly packed, calcined powder compacts at 1450°C for 3 h in air resulted in low-porosity (∼0.7%) ITO ceramics.     

纳米氧化铟锡透明隔热涂料的制备及性能表征

采用在水中分散好的氧化铟锡(ITO)水浆，以及有机硅树脂成膜剂，通过加入共溶剂并调整体系pH值，制得了性能好的透明隔热涂料。试验结果表明，该涂料具有良好的光谱选择性，在可见光区具有高的透过性，并能有效阻隔红外光区的热辐射。     

Rapid thermal annealing effect of transparent ITO source and drain electrode for transparent thin film transistors

We investigated the rapid thermal annealing (RTA) sequence effect on the electrical, optical, morphological, and structural properties of transparent thin film transistors (TTFTs) with an indium gallium zinc oxide (IGZO) channel and an indium tin oxide (ITO) source/drain. The electrical and optical properties of the IGZO channel and the ITO source/drain electrodes were compared as a function of RTA temperature in ambient air. The performance of a TTFT with only an RTA-processed IGZO channel was compared with that of a TTFT with an RTA-processed IGZO channel and ITO source/drain electrodes. Using the circular transmission line measurement (CTLM) method, we suggest a possible mechanism that explains the effect of the RTA process on the performance of the TTFT with only an annealed IGZO channel vs. that with an annealed IGZO/ITO multilayer. The TTFT with an RTA-processed IGZO/ITO multilayer showed a threshold voltage shift, an improved on/off ratio of 3.54 × 10¹¹, a subthreshold swing of 0.33 V/decade, and a high mobility of 8.69 cm²/V·s. This indicates that simultaneous RTA processing for an IGZO channel and an ITO electrode is beneficial for the fabrication of high-performance TTFTs.     

One-step elaboration of flexible transparent conductive electrodes from silver nanowires/polymer nanocomposites

A new simplified low temperature deposition method to manufacture flexible transparent conductive electrodes (FTCE) based on conductive polymer composite filled with silver nanowires (AgNWs) was investigated. Polyurethane/AgNWs composite was deposed on a poly(ethylene terephthalate) substrate as a conductive paint in a thin layer lower than 2 μm. The high aspect ratio nanowires influence on the electrical behavior is followed with surface resistivity and optical transparency experiments. The best compromise was obtained with a conductive layer filled with 2.84 vol.% of AgNWs; it exhibits a surface resistivity of 143 Ω/sq with 73% in transmittance. These transparent conductive composites processing in one step with good touching manipulation resistance demonstrate the real interest for this kind of FTCEs technology without indium tin oxide.     

Improved mechanical stability of indium zinc tin oxide based flexible transparent electrode through interlayer treatment

Due to the significant growth of the market for numerous flexible electronic devices, demand for mechanically stable indium zinc tin oxide (IZTO) based flexible transparent electrodes has recently expanded substantially. So, we have attempted to increase the mechanical stability of an IZTO based flexible transparent electrode by forming an ultrathin interlayer of an organic semiconductor polystyrene sulfonate doped polyaniline (PANI:PSS). According to the results of the systematic investigation, the PANI:PSS treated IZTO film can preserve 97.50% of its initial average transmittance (AVT) value (83.07%) after 20,000 bending cycles, but the bare IZTO film can retain only 89.00% of its initial AVT value (86.40%) after the same treatment. Furthermore, the PANI:PSS treatment has benefited in the reduction of IZTO film sheet resistance from 17.38 to 16.91 Ω/sq. Scanning electron microscopy images have indicated that the presence of a PANI:PSS interlayer on the IZTO film prevents the formation of fractures on the inorganic IZTO layer when mechanical stress is applied.     

Influence of an In2O3 buffer layer on the properties of ITO thin films

In the present study, an indium oxide (In₂O₃) thin film was deposited as a buffer layer between ITO (indium tin oxide) and PES (polyestersulfone) by RF (radio frequency) magnetron sputtering at room temperature, and X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) were conducted to characterise the structural variation. The random texture of the ITO/In₂O₃ multilayered film favoured the (2 2 2) crystallographic plane rather than the (4 0 0) plane, which was favoured in single-layer ITO films. Transmission electron microscopy (TEM) observations further indicated that the buffer layer of In₂O₃ film was amorphous, while the ITO film was characterised by a columnar structure that was oriented perpendicular to the substrate surface. The electrical and optical properties of ITO/In₂O₃ multilayered films were enhanced due to the superior crystallinity and larger grain size of the material, as observed by XRD and FESEM. The multilayered film presented an electrical resistivity of 3.1 × 10⁻⁴ Ω cm, which is significantly better than that of a single-layer ITO film without an In₂O₃ buffer layer (4.7 × 10⁻⁴ Ω cm). In addition, optical transmission through the multilayered film increased by 2-4% due to the widening of the band gap by 0.2 eV, which was attributed to a Burstin-Moss shift.     

Humidity-Sensing Characteristics of Divalent-Metal-Doped Indium Oxide Thin Films

Metal-doped indium oxide thin films that have been prepared on glass substrates via a dip-coating method from an aqueous sol show a rapid decrease in electrical conductivity at room temperature (by approximately three orders of magnitude) when brought into contact with moist air. This observation is in contrast to the conductivities of nondoped indium oxide films that are independent of moisture. Thus, the doped films can be applied as a humidity sensor. The film thickness has no substantial effect on the sensing properties, probably because of the porous nature of the films that are prepared by a sol-gel process. To examine the effects of film morphology, a comparison between the humidity-sensing properties of the films that have been prepared from organic and aqueous sols also has been conducted. The roles of the doped metal ions are also discussed.