半导体自旋电子学的研究与应用进展

自旋电子学是一门最新发展起来的涉及磁学、电子学以及信息学的交叉学科.自旋电子器件与普通半导体电子器件相比具有不挥发、低功耗和高集成度等优点.本文介绍了半导体自旋电子学的研究对象和内容,主要包括磁性半导体、自旋注入、自旋探测以及自旋输运等.本文综述了半导体自旋电子学目前的研究进展及其在自旋电子器件和量子信息处理中的应用.     

Thyristors and rectifier diodes?the semiconductor workhorses

Power semiconductor devices have become one of the main bridges between the electrical and electronic equipment technologies. They are being used increasingly in every phase of generation, distribution, and consumption of electric power. This article surveys the various types of components, their applications, and the outlook for the future. The stress is on thyristors and silicon rectifier diodes, which exhibit electrical characteristics that are uniquely tailored to ac utility power systems.     

Full binary combination schema for floating voltage source multilevel inverters

This paper presents schema of operation for floating voltage source multilevel inverters. The primary advantage of the proposed schema is that the number of voltage levels (and thus power quality) can be increased for a given number of semiconductor devices when compared to the conventional "flying capacitor" topology. However, the new schema requires fixed floating sources instead of capacitors and therefore is more suitable for battery power applications such as electric vehicles, flexible AC transmission systems and submarine propulsion. Alternatively transformer/rectifier circuits may be used to supply the floating sources in a similar way to cascaded H-bridge inverters. Computer simulation results are presented for 4-level, 8-level, and 16-level inverter topologies. A 4-level laboratory test verifies the proposed method.     

三代半导体功率器件的特点与应用分析

以S i双极型功率晶体管为代表的第一代半导体功率器件和以GaAs场效应晶体管为代表的第二代半导体功率器件为雷达发射机的大规模固态化和可靠性提高做出了贡献。近年来以S iC场效应功率晶体管和GaN高电子迁移率功率晶体管为代表的第三代半导体--宽禁带半导体功率器件具有击穿电压高、功率密度高、输出功率高、工作效率高、工作频率高、瞬时带宽宽、适合在高温环境下工作和抗辐射能力强等优点。人们寄希望于宽禁带半导体功率器件来解决第一代、第二代功率器件的输出功率低、效率低和工作频率有局限性以至于无法满足现代雷达、电子对抗和通信等电子装备需求等方面的问题。文中简要介绍了半导体功率器件的发展背景、发展过程、分类、特点、应用、主要性能参数和几种常用的半导体功率器件;重点叙述了宽禁带半导体功率器件的特点、优势、研究进展和工程应用;对宽禁带半导体功率器件在新一代雷达中的应用前景和要求进行了探讨。     

电力半导体器件在汽车工业中的应用

阐述了电力半导体器件与汽车工业的关系、在电动汽车中的应用及其在未来的汽车电子化中不可低估的作用。     

动力电池热管理中半导体制冷技术的应用探析

动力电池是电动汽车的有机组成部分,能够有效提升热能管理的质量,使电动汽车更满足生态文明建设需求。而在动力电池热管理中引入半导体制冷装置,可以有效增强电池的使用寿命和效能质量,提升电池产品的应用价值。而在科技蓬勃发展的背景下,将半导体制冷与电磁热管理相融合,逐渐成为我国电动汽车的研发方向及主流渠道。本文结合半导体制冷在动力电池中的应用契机,明确半导体制冷的基本原理与计算公式,提出相应的应用策略。     

微波半导体功率器件及其应用(第三部分)

本文介绍了微波半导体技术主要特点、功率器件和单片集成电路的特性及其应用。     

Power electronics-a technology review

A comprehensive review of power electronics technology that includes a discussion of power semiconductor devices, topologies of different classes of converters, and some selected applications is given. The modern power semiconductor devices that appeared in the 1980s, i.e., IGBTs, SITs, SITHs, and MCTs, are emphasized. Tables comparing the numerical ratings of the devices are included. Although modern converters are emphasized, phase-controlled converters, which are now very commonly used, are included for completeness. Tables comparing the features of AC-AC converters, particularly for AC drive applications are given. A few selected applications indicate in general the complexity of power electronics systems     

微波半导体功率器件及其应用

本文介绍了微波半导体技术主要特点,功率器件和单片集成电路特性及其应用。     

微波半导体功率器件及其应用(第二部分)

本文介绍了微波半导体技术主要特点、功率器件和单片集成电路的特性及其应用。     

A 1-MHz hard-switched silicon carbide DC-DC converter

Silicon Carbide (SiC) is a wide bandgap semiconductor material that offers performance improvements over Si for power semiconductors with accompanying benefits for power electronics applications that use these semiconductors. The wide bandgap of SiC results in higher junction forward voltage drops, so SiC is best suited for majority carrier devices such as field effect transistors (FETs) and Schottky diodes. The wide bandgap of SiC results in it having a high breakdown electric field, which in turn results in lower resistivity and narrower drift regions in power devices. This dramatically lowers the resistance of the drift region and means that SiC devices with substantially less area than their corresponding Si devices can be used. The lower device area reduces the capacitance of the devices enabling higher frequency operation. Here, the results from a 1-MHz hard-switched dc-dc converter employing SiC JFETs and Schottky diodes will be presented. This converter was designed to convert 270Vdc to 42Vdc such as may be needed in future electric cars. The results provide the performance obtained at 1MHz and demonstrate the feasibility of a hard-switched dc-dc converter operating at this frequency.     

Silicon carbide benefits and advantages for power electronics circuits and systems

Silicon offers multiple advantages to power circuit designers, but at the same time suffers from limitations that are inherent to silicon material properties, such as low bandgap energy, low thermal conductivity, and switching frequency limitations. Wide bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), provide larger bandgaps, higher breakdown electric field, and higher thermal conductivity. Power semiconductor devices made with SiC and GaN are capable of higher blocking voltages, higher switching frequencies, and higher junction temperatures than silicon devices. SiC is by far the most advanced material and, hence, is the subject of attention from power electronics and systems designers. This paper looks at the benefits of using SiC in power electronics applications, reviews the current state of the art, and shows how SiC can be a strong and viable candidate for future power electronics and systems applications.     

Energy Storage Systems for Automotive Applications

The fuel efficiency and performance of novel vehicles with electric propulsion capability are largely limited by the performance of the energy storage system (ESS). This paper reviews state-of-the-art ESSs in automotive applications. Battery technology options are considered in detail, with emphasis on methods of battery monitoring, managing, protecting, and balancing. Furthermore, other ESS candidates such as ultracapacitors, flywheels and fuel cells are also discussed. Finally, hybrid power sources are considered as a method of combining two or more energy storage devices to create a superior power source.     

电池型电容器─超大容量离子电容器

超大容量离子电容器又称电池型电容器,是一种介于静电电容器与二次电池之间的一种新型储能器件。它具有比静电电容器大得多的能量密度,又有比二次电池大得多的功率密度。适宜于短时大电流放电的情况下工作,可作为电动车辆的启动、制动电源,是解决电动车辆发展的瓶颈。笔者综述了超大容量离子电容器的储能原理、应用以及国内外的研究现状。     

Current Sensing for Automotive Electronics—A Survey

Current sensing is widely used in power electronic applications such as dc-dc power converters and adjustable-speed motor drives. Such power converters are the basic building blocks of drivetrains in electric, hybrid, and plug-in hybrid electric vehicles. The performance and control of such vehicles depend on the accuracy, bandwidth, and efficiency of its sensors. Various current-sensing techniques based on different physical effects such as Faraday's induction law, Ohm's law, Lorentz force law, the magnetoresistance effect, and the magnetic saturation effect are described in this paper. Each technique is reviewed and examined. The current measurement methods are compared and analyzed based on their losslessness, simplicity, and ease of implementation.     

Voltage Balancing of a 320-V, 12-F Electric Double-Layer Capacitor Bank Combined With a 10-kW Bidirectional Isolated DC--DC Converter

Electric double-layer capacitors (EDLCs) have attributes that feature high power density, quick charge/discharge time, long life cycle, and environmental friendliness. These attributes accord for increased appeal in employing the EDLCs as energy-storage devices in renewable energy systems, industrial applications, and hybrid electric vehicles as compared to other mature static energy-storage devices. This paper describes the construction of a 320-V, 12-F EDLC energy-storage bank connected to a bidirectional isolated dc--dc converter. Two types of EDLC bank configurations are considered with emphasis on their voltage-balancing circuits. Subsequently, this paper proposes a voltage-balancing circuit based on a center-tapped transformer, and includes its experimental verifications. It also discusses the charge--discharge and self-starting operation of the EDLC energy-storage system. During the charge--discharge operation, a low ripple current flowing in the EDLC bank is observed, leading to a theoretical analysis. The EDLC bank is also successfully charged to its rated voltage without any external dc charging circuit.      

Two-Dimensional Siloxene–Graphene Heterostructure-Based High-Performance Supercapacitor for Capturing Regenerative Braking Energy in Electric Vehicles

The development of high-performance electrodes that increase the energy density of supercapacitors (SCs) (without compromising their power density) and have a wide temperature tolerance is crucial for the application of SCs in electric vehicles. Recent research has focused on the preparation of multicomponent materials to form electrodes with enhanced electrochemical properties. Herein, a siloxene–graphene (rGO) heterostructure electrode-based symmetric SC (SSC) is designed that delivers a high energy density (55.79 Wh kg⁻¹) and maximum power density of 15 000 W kg⁻¹. The fabricated siloxene–rGO SSC can operate over a wide temperature range from –15 to 80 °C, which makes them suitable for applications in automobiles. This study shows the practical applicability of siloxene–rGO SSC to drive an electric car as well as to capture the braking energy in a regenerative brake-electric vehicle prototype. This work opens new directions for evaluating the use of siloxene–rGO SSC as suitable energy devices in electric vehicles.     

Vishay signs SiC technology tranfer with DaimlerChrysler

DaimlerChrysler and Vishay Intertechnology Inc have signed an agreement to enable Vishay to undertake volume manufacture of semiconductor products using Daimler Chrysler’s silicon carbide technology. Developed at Daimler Chrysler AG since 1993, SiC enables the creation of semiconductor devices for compact power conversion systems in electric cars, railway systems, and other mobile applications. SiC devices allow smaller and lighter converter module designs which can operate at the high temperatures of these systems.This is a short news story only. Visit www.three-fives.com for the latest advanced semiconductor industry news.     

量子电子器件及其应用

随着半导体芯片的特征尺寸从微米量级向纳米量级挺进,半导体的量子效应现象显现。文章阐述了半导体器件中的量子尺寸效应、隧道效应、干涉效应等量子效应的种类以及利用这些量子效应制作的量子点器件、谐振隧穿器件和单电子器件三大种类量子电子器件。介绍了各类量子电子器件的原理以及它们具有超高速、超高频、高集成度、低功耗和高特征温度等优越特性,并着重介绍了各类量子电子器件的制造方法。在此基础上,指出了量子电子器件的应用及发展前景。     

Power thyristor rating practices

The power thyristor is the most important semicoductor device used in the control of electric power. An explanation of thyristor ratings and rating presentation is required for the complete understanding and successful application of these devices. This paper not only explains the meaning of thyristor temperature, voltage, current, and gate ratings but also presents insights into how these ratings are developed. Both the semiconductor controlled rectifier (SCR), which is properly called a reverse blocking triode thyristor, and the bidirectional thyristor rating methods are discussed. SCR rating are further divided into those applying to phase control applications at power frequencies and those applying to high repetition rate inverter and pulse current appications.