Thin resistive film with temperature coefficient of resistance close to zero

A new structure of a thin resistive film based on NiCr with a temperature coefficient of resistance (TCR) close to zero is described. The resistor is formed from two nitrogen-doped NiCr films with a sputtered aluminium film between them. This structure, deposited on glass or alumina substrates, has a sheet resistance of 100 Ω, a TCR value less than ±10×10⁻⁶K⁻¹, low tracking of the TCR on the individual substrates and high long-term stability of the sheet resistance. The deposition process is characterized by high reproducibility of electrical properties. The surface and bulk chemical composition of the films have been monitored by secondary ion mass spectrometry and electron spectroscopy for chemical analysis.     

Electrical and structural properties of NiCr thin film resistors reactively sputtered in O2

NiCr thin film resistors have been reactively sputtered using a d.c. diode system in which the anode is formed by a carousel. The substrates are mounted on this carousel and can be rotated through the discharge. For films deposited onto a stationary carousel (the substrates permanently fixed in the discharge), film resistivities range from 150 to 300 μΩ as the oxygen partial pressure is increased from the base pressure to 3 × 10^-5 torr. The TCR values range from 150 to 300 ppm/°C. For carousel rotation at 20 rev/min the corresponding resistivities may be increased by a factor as large as 20 without greatly affecting the TCR. Microprobe analysis indicates that the Ni/Cr concentration ratio is independent of the deposition conditions, but that for a given oxygen partial pressure the film density is less for films deposited onto a rotating carousel than for films deposited onto a stationary carousel. Transmission electron microscopy indicates that the crystallographic structure consists of a metallic phase and an oxide phase which do not change with carousel rotation, but that films deposited onto a stationary carousel have an island structure while those deposited onto a rotating carousel have a worm-like structure. The structural features of films deposited onto a rotating carousel may be due to oblique incidence effects. Measurements of film resistance at low temperatures indicate that conduction in the film may be considered to consist of a metallic conduction mechanism of positive TCR acting in conjunction with an oxide conduction mechanism of negative TCR, with the relative contribution of each mechanism being a function of the physical microstructure of the films. Heat treatment of films deposited onto a rotating carousel produces an increase in resistance which is attributed to oxidation of the film surface, while heat treatment of films deposited onto a stationary carousel produces a resistance decrease which is attributed to thermal annealing effects dominating surface oxidation effects.     

Influence of the thickness and area of NiCr/Ag electrodes on the characteristics of BaTiO3- ceramic based positive-temperature-coefficient thermistors

The electrical behaviour of commercial BaTiO3-based positive-temperature-coefficient (PTC) thermistors with NiCr/Ag electrodes was investigated by impedance analysis in the frequency domain. The contact resistance and thus the total resistance of the PTC increases with decreasing thickness as well as with decreasing area of the NiCr layer at constant Ag top layer. The increase in the total resistance in both cases is explained by the increase in the contact area of the Ag layer to the ceramic which is represented by a model. The Ag forms a blocking contact to the ceramic in contrast to the NiCr which shows an ohmic behaviour. Using our model, the electrode impedance contribution of very thin NiCr layers can be interpreted in terms of incomplete wetting of the ceramic surface by the NiCr metal during the deposition. Supplementary scanning electron microscopy and high-resolution transmission electron microscopy analyses have been used to study the structure of the electrode interface and the structure of the layers. © 1998 Kluwer Academic Publishers     

NiCr薄膜电阻TCR的影响因素

影响NiCr薄膜电阻TCR的因素很多，我们分别从溅射淀积工艺和热处理工艺来研究和探讨NiCr薄膜电阻TCR与溅射时的真空度、溅射速率、基片温度、薄膜厚度及热处理温度和时间等因素的关系，从而为提高NiCr薄膜电阻的稳定性和降低其TCR值提供有益的条件。     

超音速火焰喷涂NiCr金属陶瓷涂层的高温硫腐蚀性能

超（超）临界机组锅炉管在硫含量较高的烟气环境中常遭受严重的高温硫酸盐及硫化腐蚀,成为锅炉安全的隐患。在2Crl3不锈钢表面利用超音速火焰喷涂（HVOF）制备了NiCr金属陶瓷涂层（1375VM和TPRI—A）,并用超音速电弧喷涂（SWAS）制备传统45CT涂层以作比较,研究了各涂层在700℃,H2—1％H2s环境中的硫...     

爆炸喷涂Cr3C2-25NiCr涂层的微观结构及性能

为了使Cr_3C_2-NiCr涂层能够应用于水力机械表面,采用爆炸喷涂技术在0Cr13Ni4Mo不锈钢基材表面制备了Cr_3C_2-25NiCr涂层,通过扫描电镜(SEM)、X射线衍射仪(XRD)、金相分析仪、拉伸试验机、显微硬度计、摩擦磨损试验机、电化学工作站等手段研究分析了该涂层的微观形貌、孔隙率、结合强度、显微硬度、耐磨性能、耐蚀性能等。结果表明:爆炸喷涂Cr_3C_2-25NiCr涂层具有高致密结构,平均孔隙率仅为0. 76%,并且其结合强度高达82 MPa;涂层平均显微硬度为1 026 HV2 N,远高于基体;且在相同试验条件下,涂层的磨损量仅为基体的1/72;同时涂层还具有远高于基体的耐腐蚀性能。     

Semiconducting and structural properties of CrSi2 A-type epitaxial films on Si(111)

Chromium disilicide (CrSi₂) films 1 000 Å thick have been prepared by molecular beam epitaxy on CrSi₂ templates grown on Si(111) substrate. The effect of the substrate temperature on the structural, electrical and optical properties of CrSi₂ films has been studied by transmission and scanning electron microscopies, optical microscopy, electrical resistivity and Hall effect measurements and infrared optical spectrometry. The optimal temperature for the formation of the epitaxial A-type CrSi₂ film have been found to be about 750°C. The electrical measurement have shown that the epitaxial A-type CrSi₂ film is p-type semiconductor having a hole concentration of 1 × 10¹⁷cm⁻³ and Hall mobility of 2 980 cm² V⁻¹ s⁻¹ at room temperature. Optical absorption coefficient data have indicated a minimum, direct energy gap of 0.34 eV. The temperature dependence of the Hall mobility (μ) in the temperature range of T = 180–500 K can be expressed as μ = 7.8 × 10¹⁰T⁻³cm²V⁻¹s⁻¹.     

Influence of NiCr/Au electrodes and multilayer thickness on the electrical properties of PANI/PVS ultrathin film grown by Lbl deposition

In the present work, we concentrate on the study of effects of metallic electrodes, multilayer thickness and temperature in ac and dc electrical conductivity of polyaniline/poly(vinyl sulfonic acid) (PANI/PVS) ultrathin films. The polymer system was obtained from layer-by-layer (Lbl) self-assembly technique on a glass substrate with an electrode array of adhesion layer of NiCr (20 nm) covered with Au (180 nm). We observed a significant and abrupt increase in the value of dc conductivity and a change of ac conductivity behavior of NiCr/Au-PANI/PVS-NiCr/Au structure when the thickness of PANI/PVS system reaches the Au layer. These effects were ascribed to the ideal contact of Au-PANI/PVS and the relative high interfacial contact resistance between PANI/PVS and NiCr, thus reducing the parallel resistance of NiCr/Au-PANI/PVS interfacial layer in an ideal parallel plate capacitor structure. Atomic Force Microscopy images confirm this assumption. Furthermore, the ac conductivity of Au-PANI/PVS-Au structure was typical of solid disordered materials. A model based on carrier hopping in a medium with randomly varying energy barriers was presented for the ac conductivity of the polymer system, which also encompasses the high dielectric constant of PANI/PVS blended films, the neutral contact Au-PANI/PVS, and the electrical resistance of NiCr-PANI/PVS interfacial layer. The model allowed separating the interface and the bulk effects in the electrical response of NiCr/Au-PANI/PVS-NiCr/Au structure and in addition the highest activation energy (35 MeV) correlated with an optimization of hopping distance (30 nm) for carriers jumps in PANI/PVS system.     

The influence of film structure on In2O3 gas response

This paper reports the influence of In₂O₃ film structure on gas-sensing characteristics measured in steady state and transient modes. Films were deposited by spray pyrolysis from InCl₃–water solutions. Correlation between gas-sensing parameters and structural parameters such as film thickness (20–400 nm), grain size (10–70 nm), refractive index and film texture (I(400)/I(222)) were established. It was shown that grain size and porosity are the parameters of In₂O₃ films that best control gas response to ozone. In the detection of reducing gases, the influence of film structure is less important. Decreases in film thickness, grain size and degree of texture are the best way to decrease time constants of the gas response of In₂O₃-based gas sensors.     

Phase formation process of IrxSi1−x thin films Structure and electrical properties

Experimental data on the phase formation process of amorphous Ir_xSi_1−x thin films with 0.30 ≤ x ≤ 0.41 are presented and discussed in relation to electric transport properties. The structure formation process at temperatures from 300 K up to 1223 K was investigated by means of X-ray diffraction. Distinct phases were observed in the final stage in dependence on the initial composition: Ir₃Si₄, Ir₃Si₅, and IrSi₃. An unknown metastable phase was found in films with a silicon concentration of 61 at.% to 64 at.% after annealing above the crystallization temperature T = 970 K. The crystal structure of this phase was determined by the combined use of X-ray diffraction and electron diffraction. It was found to be monoclinic, basic-face centred with lattice constants a = 1.027 nm, b = 0.796 nm, c = 0.609 nm, and γ = 113.7°. Additionally, microstructure and morphology of the films were investigated by transmission electron microscopy (TEM). The annealing process was studied by means of mechanical stress investigations as well as by electrical resistivity and thermopower measurements. Correlations between the structure, the phase formation and the electrical transport behaviour are discussed on the basis of conduction mechanism.     

Microwave dielectric properties of W-doped Ba0.6Sr0.4TiO3 thin films grown on (001) MgO by pulsed laser deposition with a variable oxygen deposition pressure

The microwave dielectric properties of Ba_0.6Sr_0.4TiO₃ 1 mol% W-doped thin films deposited using pulsed laser deposition, are improved by a novel oxygen deposition profile. The thin films were deposited onto (001) MgO substrates at a temperature of 720 °C. A comparison is made between three different oxygen ambient growth conditions. These include growth at a single oxygen pressure (6.7 Pa) and growth at two oxygen pressures, one low (6.7 Pa) and one high (46.7 Pa). Films were deposited in a sequence that includes both a low to high and a high to low transition in the oxygen deposition pressure. Following deposition, all films were post-annealed in 1 atm of oxygen at 1000 °C for 6 h. The dielectric Q (defined as 1 / tanδ) and the dielectric constant, ε_r, were measured at room temperature, at 2 GHz, using gap capacitors fabricated on top of the dielectric films. The percent dielectric tuning (defined as (ε_r(0 V) − ε_r(40 V)) / ε_r(0 V) × 100) and figure of merit (FOM) (defined as percent dielectric tuning × Q(0 V)) were calculated. The film deposited using the two-stage growth conditions, 6.7 / 46.7 Pa oxygen, showed a maximum Q(0 V) value with high percent dielectric tuning and gave rise to a microwave FOM twice as large as the single stage growth condition. The improved dielectric properties are due to initial formation of a film with reduced interfacial strain, due to the formation of defects at the film/ substrate interface resulting in a high Q(0 V) value, followed by the reduction of oxygen vacancies which increases the dielectric constant and tuning.     

Preparation of highly c-axis-oriented Bi4Ti3O12 thin films and their crystallographic, dielectric and optical properties

Bismuth titanate (Bi₄Ti₃O₁₂) thin films with a high c-axis orientation up to 99% were prepared on (100)-oriented silicon wafers by r.f. planar magnetron sputtering using a Bi₂TiO₅ ceramic target at a substrate temperature of 600 °C. From the Auger electron spectroscopy depth profile of the film, there is no evidence of interdiffusion of a specific element between the film and the substrate. Relative dielectric constant of these films depends on film thickness. The behavior was explained assuming a low-dielectric-constant interface layer. Using this assumption, the relative dielectric constant of Bi₄Ti₃O₁₂ film was estimated to be approximately 140. This value is close to that along the c axis in a bulk form. The remanent polarization and the coercive field were 0.8 μC cm⁻² and 20 kV cm⁻¹, respectively.     

The mechanical properties and resistivity of Au/NiCr/Ta multi-layered films on Si-(111) substrate

Au/NiCr/Ta multi-layered metallic films were deposited on Si substrate by magnetron sputtering at different substrate temperatures. The residual stress, hardness and resistivity were investigated as a function of substrate temperature by laser polarization phase shift technique, nanoindentation technique and four point probe method, respectively. The residual stress in as-deposited films at different substrate temperatures was tension with 385 MPa-606 MPa. Nanoindentation tests at shallow indentation depths (h ≤ t/4) where the hardness is reliable for metal films on hard substrate. Au film at deposition temperature 200 °C has the highest hardness 4.2 GPa. The resistivity in the deposited films reached the lowest value 3.1 μΩ.cm at substrate temperature 200 °C. The most interesting facts are that the hardness decreases with increasing residual stress and resistivity increases with increasing residual stress. The relationship of residual stress and resistivity may hint that there is a definite correlation between the mechanical properties and electrical properties in the metallic films.     

Electrical characterization of Ta2O5 films deposited by laser reactive ablation of metallic Ta

Tantalum oxide films have been deposited by 355 nm pulsed laser ablation of metallic Ta target in O₃/O₂ ambient. The structure and the composition of as-deposited and annealed films were examined by X-ray diffraction and Fourier transform infrared spectroscopy. The measurements of the current–voltage and capacitance–voltage characteristics of the Al/Ta₂O₅/Si capacitors were performed to reveal the electrical properties of the Ta₂O₅ films. The effects of annealing temperature on the characteristics of thin films have been studied. The results suggest that the films annealed above 700°C have the structure of orthorhombic β-Ta₂O₅, thc annealing treatment at high temperature decreases the bulk trap charge, the border trap, and the interface trap densities of as-deposited films, and improves significantly the dielectric and electrical properties of Ta₂O₅ film.     

Representation of the displacement rate between the loading points in terms of applied stress and temperature and its relation to creep crack growth rate, C, P and Q parameters

The displacement rate between the loading points in SUS 304 stainless steel has been experimentally obtained under several applied gross stress and high temperatures, and the equation for has been obtained experimentally as a function of applied gross stress σ_g and absolute temperature T. Then, the relation of δ to creep crack growth rate da/dt was clearly shown in terms of equation. Furthermore, the relation has been clarified between the energy rate line integral C^* as affected by , and P parameter. In this way, it is clearly shown why log (da/dt) data plotted against log C^* deviates in some systematic trend with the increase of temperature and gross stress, respectively, whereas log da/dt vs the P parameter becomes exactly the same and one straight line independent of temperature and gross stress. The discussion is made on that the similar relation will hold between the evaluation by C^* and that by _gQ or by Q^*.     

Electric characterization of HfO2 thin films prepared by chemical solution deposition

Hafnium dioxide (HfO₂) thin films were prepared on Si substrates using the chemical solution deposition (CSD) method. The Au/HfO₂/n-Si/Ag structures were characterized by X-ray diffraction (XRD), C–V curves and leakage current measurements. A relative dielectric constant of about 13.5 was obtained for the 65 nm HfO₂ film. Atomic force microscopy (AFM) measurements show uniform surfaces of the films. C–V hysteresis was found for the metal-oxide-semiconductor (MOS) structures with HfO₂ films of 52 and 65 nm thick. It is found that the width of C–V windows is related with the thickness of the HfO₂ films. Furthermore, the C–V hysteresis reveals the possibility of stress-effect, suggesting that it is possible to use HfO₂ to build an MOS structure with controllable C–V windows for memory devices. The leakage current decreases as the film thickness increases and a relatively low leakage current density has been achieved with the HfO₂ film of 65 nm.     

New transparent conducting MgIn2O4---Zn2In2O5 thin films prepared by magnetron sputtering

New materials for a transparent conducting oxide film are demonstrated. Highly transparent Zn₂In₂O₅ films with a resistivity of 3.9 × 10⁻⁴ Ω cm were prepared on substrates at room temperature using a pseudobinary compound powder target composed of ZnO (50 mol.%) and In₂O₃ (50 mol.%) by r.f. magnetron sputtering. MgIn₂O₄---Zn₂In₂O₅ films were prepared using MgIn₂O₄ targets with a ZnO content of 0–100 wt.%. The resistivity of the deposited films gradually decreased from 2 × 10⁻³ to 3.9 × 10⁻⁴ Ω cm as the Zn/(Mg + Zn) atomic ratio introduced into the films was increased. The greatest transparency was obtained in a MgIn₂O₄ film. The optical absorption edge of the films decreased as the Zn/(Mg + Zn) atomic ratio was increased, corresponding to the bandgap energy of their materials. It was found that the resistance of the undoped Zn₂In₂O₅ films was more stable than either the undoped MgIn₂O₄, ZnO or In₂O₃ films in oxidizing environments at high temperatures.     

应力对蓝宝石衬底上生长二氧化钒薄膜结构和光电性能的调控

利用脉冲激光沉积技术在蓝宝石衬底上生长不同厚度的VO₂薄膜, 对薄膜的结构、表面形貌和光电性能进行研究。结果表明: 所沉积的VO₂薄膜为具有单晶性能、表面平整的单斜晶相的VO₂薄膜, 相变前后, 方块电阻的变化可达到3~4个数量级, 在波长为2500 nm的透过率变化最高可达56%, 优化的可视透过率(T_lum)和太阳能调节率( ∆T_sol )为43.2%和8.7%。薄膜受到的应力对VO₂薄膜有重要影响, 可以通过调节薄膜的厚度对VO₂薄膜光电性能实现调控。当VO₂薄膜厚度较小时, 薄膜受到拉应力, 拉应力能使相变温度显著降低, 金属-绝缘体转变性能(MIT)不但与载流子浓度的变化相关, 而且还受载流子迁移率变化的影响;当VO₂薄膜厚度较大时, 薄膜受到压应力, VO₂薄膜的相变温度接近块体VO₂的相变温度, MIT转变主要来自于载流子浓度在相变前后的变化, 其载流子迁移率几乎不变。     

Structural, dielectric and optical properties of Ba(Ti, Zr)O3 thin films prepared by chemical solution deposition

Ba(Ti_0.95Zr_0.05)O₃ (BTZ) thin films grown on Pt/Ti/SiO₂/Si(100) substrates were prepared by chemical solution deposition. The structure and surface morphology of BTZ thin films has been studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). At 100 kHz, the dielectric constant and dissipation factor of the BTZ film are 121 and 0.016, respectively. The ellipsometric spectrum of the BTZ thin film annealed at 730 °C was measured in the range of wavelength from 355 to 1700 nm. Assuming a five-layer model (air/surface roughness layer/BTZ/interface layer/Pt) for the BTZ thin films on platinized silicon substrates, the optical constant spectra (refractive index n and the extinction coefficient k) of the BTZ thin films were obtained.     

Optical properties of Tl2InGaS4 layered single crystal

The temperature dependence of the optical band gap of Tl₂InGaS₄ single crystal in the temperature region of 300–500 K and the room temperature refractive index, n(λ), have been investigated. The absorption coefficient, which was calculated from the transmittance and reflectance spectra in the incident photon energy range of 2.28–2.48 eV, increased with increasing temperature. Consistently, the absorption edge shifts to lower energy values as temperature increases. The fundamental absorption edge corresponds to an indirect allowed transitions energy gap (2.35 eV) that exhibits a temperature coefficient of −4.03 × 10⁻⁴ eV/K. The room temperature n(λ), calculated from the reflectance and transmittance data, allowed the identification of the oscillator strength and energy, static and lattice dielectric constants, and static refractive index as 16.78 eV and 3.38 eV, 5.96 and 11.77, and 2.43, respectively.