对CDMA时变色散信道基于离散正则模型的盲辨识方法

本文通过将扩展函数在时延扩展域和Ｄｏｐｐｌｅｒ扩展域进行采样，得到了ＣＤＭＡ时变色散信迢的离散正则模型，此模型适宜于采用二阶统计量方法对ＣＤＭＡ时变色散系统进行盲信号处理。文章同时给出了一种对正则采样值的子空间盲辨识算法。与基于基展开模型处理时变信道的方法不同的是，这种基于离散正则模型的盲辨识方法不需借助高阶统计量估计信道的指数基频率，也不必假设相邻符号间的时延变化呈线性关系，而且赋予了基展开坐标明确的物理意义。文章通过仿真验证了算法的有效性。     

SI诊断算法

本文针对ＰＭＣ模型最佳设计Ｄδｔ设计的系统级诊断提出一种诊断算法，命名为ＳＩ诊断算法，该算法充分利用了Ｄδ．ｔ设计系统图是ｔ次正则图的特点，计算复杂性为Ｏ（ｎ２）。     

一种新的模糊规则动态调整正则项系数的神经网络学习方法

从偏差－方差模型出发，提出了一种通过模糊规则推理动态调整正则项系数的新方法，并有效地确定了模糊推理规则和隶属度函数，并将该方法与BP算法和固定正则项系数的方法进行了比较，该方法具有精度高、收敛快和泛化能力高等优点，通过实例表明了该方法的有效性。     

一种基于共轭梯度的正则化OT图像重建算法

文章基于OT扩散方程模型提出了一种正则化共轭梯度OT图像重建算法，通过引入图像熵和局部平滑函数为正则化项以克服重建问题中的病态特性。与简单的共轭梯度重建算法相比，重建图像的MSE值分别为0．4413^＊10^-4和0．4819^＊10^-4。研究表明，正则化的OT图像重建算法能有效降低重建中的病态性，提高图像重建质量。     

矢量基学习算法及在辨识建模中的应用研究

递推最小二乘(RLS)存在模型阶次及参数要预先设定、逼近能力有限、收敛较慢等诸多缺陷，本文提出了矢量基学习(Vector Base Learning：VBL)算法。基于核(Kernel)变换的思想，利用正则化技术建立了优化目标函数，避免出现过拟合。并提出了基矢量、基矢量集和解空间的概念，通过分析样本矢量和解空间的夹角，推导了基矢量的判断准则。继而获得了VBL辨识参数的增长和校正模式的递推公式。最后对算法仿真分析表明VBL算法比RLS具有更好的收敛性和辨识效果。     

基于BP神经网络的无线定位数据融合模型

针对常规TOA和TDOA的加权最小二乘法定位算法的缺点，提出了一种利用反向传播（BP）神经网络构造将TOA和TDOA定位信息的融合模型，并采用贝叶斯正则优化方法，来解决BP算法收敛慢和容易陷入局部极小值的问题。通过仿真表明，该模型具有较高的定位精度。     

基于稀疏贝叶斯学习的高效DOA估计方法

针对采用1l 范数优化的稀疏表示DOA估计算法正则化参数选取困难、计算复杂度高的问题,该文提出一种基于稀疏贝叶斯学习的高效算法.该算法首先利用均匀线阵的结构特性,将DOA估计联合稀疏模型的构建与求解转换到实数域进行.其次,通过优化稀疏贝叶斯学习的基消除机制,使该算法具有更快的收敛速度.仿真结果表明,与1l 范数优化类算法相比,该文方法具有更高的空间分辨率和估计精度且计算复杂度低.     

基于L1/L2正则化电阻抗层析成像算法的碳纤维增强复合材料损伤检测

电阻抗层析成像（EIT）为碳纤维增强复合材料（CFRP）结构健康检测提供了一种可视化检测的手段。针对EIT图像重建的欠定性和病态性，提出了一种基于L1/L2稀疏正则化的EIT图像重建算法。该算法通过构建L1/L2正则化项的目标泛函，在求解过程中加入正则化参数对解向量进行修正，并在迭代过程中加入约束区间使解向量更加贴近真实分布。仿真和实验结果表明，与共轭梯度（CGLS）算法、Tikhonov算法、L1正则化算法相比，所提L1/L2正则化算法重构的损伤位置和大小更接近真实损伤模型，损伤的辨识度更高，电极伪影得到明显改善，为EIT应用于CFRP层压板损伤检测提供了新方法。     

基于ERNIE序列标注的地址分级模型应用

提出基于ERNIE序列标注的地址分级模型进行地址提取识别，将地址分级问题转换为一个序列标注的NLP问题。首先将原始待分级地址文本输入到训练好的ERNIE命名实体识别算法训练模型中，得到11级地址的粗略分级；然后应用AC自动机算法，对地址的前5级地址进行补全或纠正，再通过正则化匹配对地址后4级进行纠正。提出的模型不仅可以提高地址解析的准确率，还可以对错误地址进行纠正，最后将模型用于真实数据集，验证了方法的有效性。     

B样条小波基在信号去噪中应用与性能分析

针对实际应用要求正交小波基具有一定的光滑性和正则性，利用B样条正交小波基构造滤波器，理论上通过对total variation这一正则性度量的计算，得出B样条小波的正则性优于Haar、shanonon小波，并且提出应用互相关算法来解决原信号和重构信号的延迟问题，实验分析表明：由其构造的滤波器应用在非突变信号下比Haar、shanonon小波基构造的滤波器的信噪比得到了显著性的提高。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.