Microstructure and properties of porous SiC ceramics with AlN–RE2O3 (RE = Sc,Y, Lu) additives

The intrinsic microstructure and crystalline phases of porous SiC ceramics with 5 vol% AlN–RE₂O₃ (RE = Sc, Y, Lu) additives were characterized by high-resolution transmission microscopy with energy-dispersive spectroscopy and X-ray diffraction. The homophase (SiC/SiC) and heterophase (SiC/junction) boundaries were found to be clean; that is, amorphous films were not observed in the specimens. In addition, ScN, YN, and LuN were formed as secondary phases. The flexural strength and thermal conductivity of the ceramics were successfully tuned using different additive compositions. The flexural strength of the ceramics improved by a factor of ~3, from 11.7 MPa for the specimen containing Y₂O₃ to 34.2 MPa for that containing Sc₂O₃, owing to the formation of a wide necking area between SiC grains. For the same reason, the thermal conductivity improved by ~56%, from 9.2 W·m^?1·K^?1 for the specimen containing Lu₂O₃ to 14.4 W·m^?1·K^?1 for that containing Sc₂O₃.     

Phase stability and thermal conductivity of RE2O3 (RE=La,Nd, Gd,Yb) and Yb2O3 co-doped Y2O3 stabilized ZrO2 ceramics

Y₂O₃ stabilized ZrO₂ (YSZ) has been considered as the material of choice for thermal barrier coatings (TBCs), but it becomes unstable at high temperatures and its thermal conductivity needs to be further reduced. In this study, 1 mol% RE₂O₃ (RE=La, Nd, Gd, Yb) and 1 mol% Yb₂O₃ co-doped YSZ (1RE1Yb–YSZ) were fabricated to obtain improved phase stability and reduced thermal conductivity. For 1RE1Yb–YSZ ceramics, the phase stability of metastable tetragonal (t′) phase increased with decreasing RE³⁺ size, mainly attributable to the reduced driving force for t′ phase partitioning. The thermal conductivity of 1RE1Yb–YSZ was lower than that of YSZ, with the value decreasing with the increase of the RE³⁺ size mainly due to the increased elastic field in the lattice, but 1La1Yb–YSZ exhibited undesirably high thermal conductivity. By considering the comprehensive properties, 1Gd1Yb–YSZ ceramic could be a good potential material for TBC applications.     

Effects of porosity on electrical and thermal conductivities of porous SiC ceramics

The effects of porosity on the electrical and thermal conductivities of porous SiC ceramics, containing Y₂O₃–AlN additives, were investigated. The porosity of the porous SiC ceramic could be controlled in the range of 28–64 % by adjusting the sacrificial template (polymer microbead) content (0–30 wt%) and sintering temperature (1800–2000 °C). Both electrical and thermal conductivities of the porous SiC ceramics decreased, from 7.7 to 1.7 Ω⁻¹ cm⁻¹ and from 37.9 to 5.8 W/(m·K), respectively, with the increase in porosity from 30 to 63 %. The porous SiC ceramic with a coarser microstructure exhibited higher electrical and thermal conductivities than those of the ceramic with a finer microstructure at the equivalent porosity because of the smaller number of grain boundaries per unit volume. The decoupling of the electrical conductivity from the thermal conductivity was possible to some extent by adjusting the sintering temperature, i.e., microstructure, of the porous SiC ceramic.     

Electrical and Thermal Properties of SiC Ceramics Sintered with Yttria and Nitrides

The electrical and thermal properties of SiC ceramics containing 1 vol% nitrides (BN, AlN or TiN) were investigated with 2 vol% Y₂O₃ addition as a sintering additive. The AlN‐added SiC specimen exhibited an electrical resistivity (3.8 × 10¹ Ω·cm) that is larger by a factor of ~10² compared to that (1.3 × 10^?1 Ω·cm) of a baseline specimen sintered with Y₂O₃ only. On the other hand, BN‐ or TiN‐added SiC specimens exhibited resistivity that is lower than that of the baseline specimen by a factor of 10^?1. The addition of 1 vol% BN or AlN led to a decrease in the thermal conductivity of SiC from 178 W/m·K (baseline) to 99 W/m·K or 133 W/m·K, respectively. The electrical resistivity and thermal conductivity of the TiN‐added SiC specimen were 1.6 × 10^?2 Ω·cm and 211 W/m·K at room temperature, respectively. The present results suggest that the electrical and thermal properties of SiC ceramics are controllable by adding a small amount of nitrides.     

Influence of Y2O3 addition on electrical properties of β-SiC ceramics sintered in nitrogen atmosphere

The influence of Y₂O₃ addition on electrical properties of β-SiC ceramics has been investigated. Polycrystalline SiC samples obtained by hot-pressing SiC–Y₂O₃ powder mixtures in nitrogen (N) atmosphere contain Y₂O₃ clusters segregated between SiC grains. Y₂O₃ forms a Y–Si-oxycarbonitride phase during sintering by reacting with SiO₂ and SiC and by dissolution of N from the atmosphere; this induces N doping into the SiC grains during the process of grain growth. The SiC samples exhibit an electrical resistivity of ～10^?3 Ω cm and a carrier density of ～10²⁰ cm^?3, which are ascribed to donor states derived from N impurities. The increase in defect density with increasing Y₂O₃ content is likely to be a main limiting factor of the electrical conductivity of SiC ceramics.     

Microstructure and Thermal Conductivity of Silicon Carbide with Yttria and Scandia

A fully dense SiC ceramic with high thermal conductivity was obtained by conventional hot pressing, with 1 vol% Y₂O₃–Sc₂O₃ additives. The ceramic had a bimodal microstructure consisting of large and small equiaxed SiC grains. Observation with high‐resolution transmission electron microscopy (HRTEM) showed two kinds of homophase (SiC/SiC) boundaries, that is crystallized and clean boundaries, and a fully crystallized junction phase. The thermal conductivity of the SiC ceramic was 234 W (m·K)^?1 at room temperature. The high thermal conductivity was attributed to a clean SiC lattice and good contiguity between SiC grains.     

New quaternary additive for processing fully ceramic microencapsulated fuels without applied pressure

To apply SiC ceramics as a matrix for fully ceramic microencapsulated (FCM) fuels, the equivalent boron content (EBC) factors of elements in the sintering additives should be considered as an important criterion. A previously developed quaternary additive composition based on AlN–Y₂O₃–Sc₂O₃–MgO contained Sc, which has a relatively high EBC factor (8.56 × 10^?3). This study proposes a novel quaternary additive composition (AlN–Y₂O₃–CeO₂–MgO), in which Sc is replaced by Ce (EBC factor = 6.36 × 10^-5). The new additive composition achieved successful densification of the SiC matrix at 1850 °C without applied pressure. FCM pellets containing 36 vol% tristructural isotropic (TRISO) particles were successfully sintered at 1850 °C using the above matrix without applied pressure. The thermal conductivities of the FCM pellets prepared via pressureless sintering with 36 vol% TRISO particles were 43.9 W·m^-1·K^-1 and 25.8 W·m^-1·K^-1 at 25 °C and 500 °C, respectively.     

Spontaneous infiltrations of compound systems of Y2O3, Sm2O3, RE2O3, Al2O3 and AIN in SiC ceramics

Silicon carbide ceramics (SiC) are used in different applications in the engineering area due to the excellent properties, mainly in high temperatures. They are usually obtained by liquid-phase sintering enabling to form volatile products and, consequently, defects. The present work aims at studying the obtention of SiC ceramics by spontaneous infiltration using a eutectic composition of the Al₂O₃/Y₂O₃, AlN/Y₂O₃, Al₂O₃/Sm₂O₃, AlN/Sm₂O₃, Al₂O₃/RE₂O₃ and AlN/RE₂O₃ systems. RE₂O₃ is the concentrate of the rare-earth oxide obtained from Xenotime ore. Infiltration tests were carried out in argon atmosphere, graphite crucibles, in several temperatures near the melting point of each system, varying from 2.5 to 60 min. It was observed that Al₂O₃/Y₂O_3, Al₂O₃/Sm₂O₃, AlN/Sm₂O₃ and Al₂O₃/RE₂O₃ systems do not infiltrate appropriately and the AlN/Y₂O₃ and AlN/RE₂O₃ systems infiltrated spontaneously more than 20 mm; however, the first one presented a higher degree of infiltration, approximately 97%.     

Mechanical and Thermal Properties of Pressureless Sintered Silicon Carbide Ceramics with Alumina–Yttria–Calcia

The effect of sintering temperature on the mechanical and thermal properties of SiC ceramics sintered with Al₂O₃–Y₂O₃–CaO without applied pressure was investigated. SiC ceramics containing A₂O₃–Y₂O₃–CaO as sintering additives can be sintered to >97% theoretical density at temperatures between 1750°C and 1900°C without applied pressure. A toughened microstructure, consisting of relatively large elongated grains and relatively small equiaxed grains, has been obtained when sintered at temperatures as low as 1800°C for 2 h in an argon atmosphere without applied pressure. The achievement of toughened microstructures under such mild conditions is the result of the additive composition. The thermal conductivity of the SiC ceramics increased with increasing sintering temperature because of the decrease in the lattice oxygen content of the SiC grains. Typical sintered density, flexural strength, fracture toughness, hardness, and thermal conductivity of the 1850°C‐sintered SiC, which consisted of 62.2% 4H, 35.7% 6H, and 2.1% 3C, were 99.0%, 628 MPa, 5.3 MPa·m^1/2, 29.1 GPa, and 80 W·(m·K)^?1, respectively.     

Thermal and Mechanical Properties of SiC–TiC0.5N0.5 Composites

SiC–TiC_0.5N_0.5 composites were fabricated from β‐SiC and TiN powders with 2 vol% equimolar Y₂O₃–Sc₂O₃ additives by conventional hot pressing. Thermal and mechanical properties of the SiC–TiC_0.5N_0.5 composites were investigated as a function of initial TiN content. Relative densities of ≥98.9% were achieved for all samples. The addition of a small amount of TiN increased thermal conductivity, flexural strength, and fracture toughness of SiC ceramics. However, further addition of TiN in excess of 10 and 20 vol% deteriorated both thermal conductivity and flexural strength of the composites, respectively. In contrast, the fracture toughness of the composites increased continuously from 4.2 to 6.2 MPa?m^1/2 with increasing initial TiN content from 0 to 35 vol%, due to crack deflection by TiC_0.5N_0.5. The maximum values of thermal conductivity and flexural strength were 224 W/m K for a 2 vol% TiC_0.5N_0.5 and 599 MPa for a 10 vol% TiC_0.5N_0.5 composite.     

Y3Ce7Ta2O23.5 and Yb3Ce7Ta2O23.5—Two kinds of novel ceramics for thermal barrier coatings

For the development of ceramic candidates for thermal barrier coatings, two kinds of new ceramics, Y₃Ce₇Ta₂O_23.5 and Yb₃Ce₇Ta₂O_23.5, were synthesized by sintering at 1873?K for 10?h. The obtained samples were composed of a single fluorite-type phase, and their relative densities are greater than 90%. Because of phonon scattering caused by the complex lattice, the large number of oxygen vacancies, and substituted atoms, the thermal conductivity is lower than that of 8YSZ. The coefficients of thermal expansion (CTEs) of these two products are located in the range of 10.22–12.57?×?10^?6/K and 9.62–12.66?×?10^?6/K, respectively, from 323?K to 1473?K, and they also exhibit excellent phase stability up to 1473?K. However, their thermal conductivities and CTEs are lower than those of RE₂Ce₂O₇ (RE?=?La, Nd, or Sm).     

Thermal and electrical properties of additive-free rapidly hot-pressed SiC ceramics

The thermal and electrical properties of newly developed additive free SiC ceramics processed at a temperature as low as 1850 °C (RHP0) and SiC ceramics with 0.79 vol.% Y₂O₃-Sc₂O₃ additives (RHP79) were investigated and compared with those of the chemically vapor-deposited SiC (CVD-SiC) reference material. The additive free RHP0 showed a very high thermal conductivity, as high as 164 Wm⁻¹ K⁻¹, and a low electrical resistivity of 1.2 × 10⁻¹ Ω cm at room temperature (RT), which are the highest thermal conductivity and the lowest electrical resistivity yet seen in sintered SiC ceramics processed at ≤1900 °C. The thermal conductivity and electrical resistivity values of RHP79 were 117 Wm⁻¹ K⁻¹ and 9.5 × 10⁻² Ω cm, respectively. The thermal and electrical conductivities of CVD-SiC parallel to the direction of growth were ∼324 Wm⁻¹ K⁻¹ and ∼5 × 10⁻⁴Ω⁻¹ cm⁻¹ at RT, respectively.     

Effects of starting powder on microstructure and thermal conductivity of pressureless-sintered fully ceramic microencapsulated fuels

The effects of the starting SiC powder (α or β) with the addition of 5.67 wt% AlN–Y₂O₃–CeO₂–MgO additives on the residual porosity and thermal conductivity of fully ceramic microencapsulated (FCM) fuels were investigated. FCM fuels containing ～41 vol% and ～37 vol% tristructural isotropic (TRISO) particles could be sintered at 1870 °C using α-SiC and β-SiC powders, respectively, via a pressureless sintering route. The residual porosities of the SiC matrices in the FCM fuels prepared using the α-SiC and β-SiC powders were 1.1% and 2.3%, respectively. The thermal conductivities of FCM pellets with ～41 vol% and ～37 vol% TRISO particles (prepared using the α-SiC and β-SiC powders, respectively) were 59 and 41 Wm^?1K^?1, respectively. The lower porosity and higher thermal conductivity of FCM fuels prepared using the α-SiC powder were attributed to the higher sinterability of the α-SiC powder than that of the β-SiC powder.     

New class of high-entropy defect fluorite oxides RE2(Ce0.2Zr0.2Hf0.2Sn0.2Ti0.2)2O7 (RE = Y,Ho, Er,or Yb) as promising thermal barrier coatings

High-entropy ceramics exhibit great application potential as thermal barrier coating (TBC) materials. Herein, a series of novel high-entropy ceramics with RE₂(Ce_0.2Zr_0.2Hf_0.2Sn_0.2Ti_0.2)₂O₇ (RE₂HE₂O₇, RE = Y, Ho, Er, or Yb) compositions were fabricated via a solid-state reaction. X-ray diffraction (XRD) and energy dispersive spectrometry (EDS) mapping analyses confirmed that RE₂HE₂O₇ formed a single defect fluorite structure with uniform elemental distribution. The thermophysical properties of the RE₂HE₂O₇ ceramics were investigated systematically. The results show that RE₂HE₂O₇ ceramics have excellent high-temperature phase stability, high thermal expansion coefficients (10.3–11.7 × 10^?6 K^-1, 1200 ℃), and low thermal conductivities (1.10-1.37 W m^-1 K^-1, 25 ℃). In addition, RE₂HE₂O₇ ceramics have a high Vickers hardness (13.7–15.0 GPa) and relatively low fracture toughness (1.14-1.27 MPa m^0.5). The outstanding properties of the RE₂HE₂O₇ ceramics indicate that they could be candidates for the next generation of TBC materials.     

Electrical properties of (Na2O)35.7(RE2O3)7.2(SiO2)57.1 (RE = Y,Sm, Gd,Dy, Ho,Er and Yb) glasses and ceramics

Fifteen kinds of sodium rare earth silicate glasses and ceramics with (Na₂O)_35.7(RE₂O₃)_7.2(SiO₂)_57.1 (RE = Y, Sm, Gd, Dy, Ho, Er and Yb) composition were synthesized from a mixture of Na₂CO₃, RE₂O₃ and SiO₂. The densities of the glasses were in fairly good agreement with the theoretical densities and were 0.2–0.41 g cm⁻³ larger than those of the polycrystalline ceramics. The conductivities of the glasses are 1–2 orders lower than those of the ceramics and the highest electrical conductivity was achieved for the Yb ceramic sample with the smallest ion radius of RE³⁺. The electromotive force, EMF, of the potentiometric CO₂ gas sensors using (Na₂O)_35.7(Y₂O₃)_7.2(SiO₂)_57.1 glass and ceramic increased linearly with an increase in the logarithm of CO₂ partial pressure, in accordance with Nernst's law. It was suggested from the slope of Nernst's equation that the two electron-transfer reaction associated with the carbon dioxide molecule takes place at the detection electrode above 450 °C.     

Electrically conductive SiC ceramics processed by pressureless sintering

Polycrystalline SiC ceramics with 10 vol% Y₂O₃-AlN additives were sintered without any applied pressure at temperatures of 1900-2050°C in nitrogen. The electrical resistivity of the resulting SiC ceramics decreased from 6.5 × 10¹ to 1.9 × 10⁻² Ω·cm as the sintering temperature increased from 1900 to 2050°C. The average grain size increased from 0.68 to 2.34 μm with increase in sintering temperature. A decrease in the electrical resistivity with increasing sintering temperature was attributed to the grain-growth-induced N-doping in the SiC grains, which is supported by the enhanced carrier density. The electrical conductivity of the SiC ceramic sintered at 2050°C was ~53 Ω⁻¹·cm⁻¹ at room temperature. This ceramic achieved the highest electrical conductivity among pressureless liquid-phase sintered SiC ceramics.     

Phase stabilisation,thermal expansion and ionic conductivity of high content rare earth oxide (Lu2O3, Y2O3 and Gd2O3) stabilised cubic hafnia

For satellite propulsion, new material are developed to sustain harsh thermal and environmental conditions in the combustion chambers induced by the development of new “green” propellants less toxic than currently used hydrazine. In the present study, hafnia-based materials with different amounts and natures of stabilisers (Lu₂O₃, Y₂O₃ and Gd₂O₃) have been chosen for the ceramic part of the system. Microstructures, Thermal Expansion Coefficients (373–1673 K) and ionic conductivities (600–1273 K) of synthesised fully stabilised fluorite phases have been investigated. Lattice parameters have been determined and an abacus has been proposed as a function of the amount of RE₂O₃ and the ionic radius of the Rare Earth cation (RE³⁺). Moreover, it has been observed a TECs decrease from 14 to 40 mol% of RE₂O₃ and few changes in the ionic conductivity above 33 mol% of RE₂O₃. Finally, addition of Lu₂O₃ allows to reach the lowest TEC and ionic conductivity.     

Electrical and mechanical properties of pressureless sintered SiC-Ti2CN composites

Highly conductive SiC-Ti₂CN composites were fabricated from β-SiC and TiN powders with 10?vol% Y₂O₃-AlN additives via pressureless sintering. The effect of initial TiN content on the microstructure, and electrical and mechanical properties of the SiC-Ti₂CN composites was investigated. It was found that all specimens could be sintered to ≥98% of the theoretical density. The electrical resistivity of the SiC-Ti₂CN composites decreased with increasing initial TiN content. The SiC-Ti₂CN composites prepared from 25?vol% TiN showed the highest electrical conductivity (～1163 (Ω?cm)^?1) for any pressureless sintered SiC ceramics thus far. The high electrical conductivity of the composites was attributed to the in situ-synthesis of an electrically conductive Ti₂CN phase and the growth of N-doped SiC grains during pressureless sintering. The flexural strength, fracture toughness, and Vickers hardness of the composite fabricated with 25?vol% TiN were 430?MPa, 4.9?MPa?m^1/2, and 23.1?GPa, respectively, at room temperature.     

High thermal conductivity of spark plasma sintered silicon carbide ceramics with yttria and scandia

A fully dense SiC ceramic with a room‐temperature thermal conductivity of 262 W·(m·K)^?1 was obtained via spark plasma sintering β‐SiC powder containing 0.79 vol% Y₂O₃‐Sc₂O₃. High‐resolution transmission electron microscopy revealed two different SiC‐SiC boundaries, that is, amorphous and clean boundaries, in addition to a fully crystallized junction phase. A high thermal conductivity was attributed to a low lattice oxygen content and the presence of clean SiC‐SiC boundaries.     

Structural and Thermo‐Mechanical Properties of Nd: Y2O3 Transparent Ceramics

Various content of neodymia Nd: Y₂O₃ (Nd: 0.5–5.0 at.%) transparent ceramics were fabricated by vacuum sintering. The prepared Nd: Y₂O₃ ceramics exhibit high transmittance (~80%) at the wavelength of 1100 nm. It is found that the increase in Nd concentration enhances the grain size growth, while decreases the phonon energy, which is benefit for improving both the luminescence quantum and up‐conversion efficiency. The thermal conductivity and thermal expansion coefficient of the transparent 1.0 at.% Nd: Y₂O₃ ceramic is 5.51 W·(m·K)^?1 and 8.11 × 10^?6 K^?1, respectively. The hardness and the fracture toughness of the transparent ceramic is 9.18 GPa and 1.03 Mpa·m^1/2, respectively. The results indicate that the Nd: Y₂O₃ transparent ceramic is a potential candidate material for laser.