一种可运用于THz波段的新型定向耦合器

根据分支波导定向耦合器的工作原理,并结合考虑MEMS 刻蚀工艺,设计出一款应用于THz 波段的10dB 波导定向耦合器。该定向耦合器在传统的分支线结构上加以改进,将传统分支线耦合结构改进成新型"田"字型耦合结构,性能较好,并提高了可加工性。通过HFSS 软件仿真,该定向耦合器在0. 33 ~0. 35THz 频段内耦合度为10dB,隔离度达到30dB 以上,各端口回波损耗小于-30dB,整体插损小于0. 2dB。     

0.5THz波导双定向耦合器设计

介绍了0.5 THz波导双定向耦合器的原理分析及仿真设计.采用双排多孔等间距不等孔径的方案,设计了0.325～0.5 THz宽带波导双定向耦合器,并给出了仿真及测试曲线.测试结果显示,0.5 THz波导双定向耦合器在0.325～0.5 THz全波导带宽内耦合度为(7.6±1)dB,方向性大于18 dB,输入端口回波损耗...     

一种新型六路功率分配合成网络的研究分析

本文指出了在二进制功率的合成方式中存在的缺点,同时也给出了波导——微带探针过渡以及3dB分支波导定向耦合器的基本原理。介绍了改进型分支波导三路功率分配器,本结构有很多的优点,比如耗能低、驻波好、端口隔离度较高等等。对于目前合成方式中存在的缺点,介绍了一种新型的基于波导Ka频段六路功率分配合成网络,本结构的主要组成部分是3dB分支波导定向耦合器、改进型分支波导三路功率分配器以及E面波导——微带探针过渡。     

半模基片集成波导窄壁缝隙耦合定向耦合器

半模基片集成波导(HMSIW)是最近刚刚提出的一种微波毫米波平面集成导波结构,具有品质因数高,损耗小,结构紧凑和高集成度等优点.本文基于HMSIW技术和标准印刷电路板(PCB)工艺设计并研制了6 dB、10 dB、15 dB和20 dB四种窄壁缝隙耦合定向耦合器.所设计的定向耦合器在保留与基片集成波导(SIW)定向耦合器性能相同的基础上,将体积减小了近一半.测试结果与Ansoft HFSS商用软件仿真结果基本一致,验证了所设计的定向耦合器具有小型化和性能良好等优点.     

一种新型Ka频段六路功率分配/合成网络

指出了二进制(2n)功率合成方式的不足,介绍了波导—微带探针过渡和3 dB分支波导定向耦合器的原理。提出了改进型分支波导三路功率分配器,该结构具有损耗低、驻波好、幅度相位一致性好和端口隔离度高等优点。针对现有合成方式的不足,提出了一种新型基于波导的Ka频段六路功率分配/合成网络,该结构由改进型分支波导三路功率分配器、3 dB分支波导定向耦合器和E面波导—微带探针过渡组成。     

基于3 dB 定向耦合器的0.14 THz 功率分配器设计方法

介绍了一种基于3 dB 定向耦合器的0.14 THz 功率分配器设计方法。由于太赫兹频段的器件尺寸越来越小型化、微型化,特别是对于功率分配器中的核心结构,造成精密机械加工方式难以实现。典型的波导3 dB 定向耦合器结构是90电桥结构,其耦合缝隙之间的间距仅有不到0.5 mm,这样的尺寸是机加时产生的应力难以承受的。通过分析波导定向耦合器支路间的相位关系得出:如果耦合缝隙的间距增加到半波长的整数倍,支路间的相位差仍为90,但这样变化的结果是带宽的降低。通过耦合缝隙间距的适度增加,降低了机加的难度,工作相对带宽降到10%。经仿真分析,结果得到了验证。加工的样品测试结果表明,在0.133 ~0.147 THz 的频率范围内,插入损耗小于1 dB,回波损耗小于-20 dB。     

多孔耦合型太赫兹波导定向耦合器的设计

设计了一种结构紧凑、工作频带较宽、耦合平稳、高方向性的十字形多孔耦合的太赫兹波导定向耦合器。基于多孔耦合原理,利用HFSS软件对太赫兹波导定向耦合器进行了模型仿真和结构优化。仿真结果表明:在325~475 GHz带宽范围内,该多孔耦合太赫兹波导定向耦合器耦合度达到7.50.8 dB,隔离度达到30 dB,即方向性优于20 dB,各端口回波损耗小于-20 dB。通过对该波导定向耦合器进行高温高压模拟仿真,确定了使用负性光刻胶SU-8作为结构材料的可行性,提出应用MEMS工艺在硅衬底上进行加工,将牺牲层工艺应用到波导腔结构的制作中。利用光刻在直通波导和耦合波导公共宽壁上形成的十字形等间距排列耦合孔结构,可以实现较宽的带宽和良好的耦合平坦度。该方法提高了耦合孔尺寸和位置的精度,减小了反射损耗,为太赫兹波导结构的加工提供了新思路。     

太赫兹−16 dB本振信号耦合器设计与实现

针对太赫兹频段边带分离接收机的应用需求,综合考虑本振信号弱耦合度、射频信号高方向性及现阶段铣削工艺精确度等要求,研制了一款400~500 GHz频段-16 dB 本振信号波导耦合器。主要包括分支型定向耦合器的耦合度特性分析、-16 dB弱耦合度波导耦合器设计、基于数控机械加工(CNC)技术的器件制备与结果讨论。2件样品实测结果均表明：该耦合器在400~500 GHz频段(相对带宽为22.5%)获得本振信号耦合度在-16~-17 dB,射频信号方向性为-1.2 dB,隔离度优于-20 dB,所有端口回波损耗优于-15 dB。上述性能均与仿真结果保持高度一致,表明当前CNC技术能够满足该高频段波导耦合器制备的高精确度需求。     

波导多孔定向耦合器的分析与综合

本文导出了多孔波导定向耦合器的精确分析方法,该方法用来研究用一般理论和新的综合技术设计的耦合器性能。这个分析是基于耦合器的等效四端口网络,耦合孔用集中电抗表示。这些电抗与表示波导的色散传输线串联、并联、或者串并联。孔的大小和公共壁厚度的影响已加以考虑。根据一阶松耦合近似法设计的许多耦合器都具有良好的方向性,甚至对于紧耦合(3dB)也是如此,但是,以前的理论没有给出予测方向性,并且常常偏离最佳设计值很远。基于分布于低通原型滤波器的新综合技术已经发明,同时,该技术给出的结果与予测的性能吻合。用这个理论设计的紧奏的多孔定向耦合器,在整个波导工作频段上,具有大于43dB 的方向性。     

微波3dB微带双分支定向耦合器的小型化

分析理论上的3dB微带双分支线定向耦合的S参量特性。在此基础上,用接开路线的方法对标准3dB微带双分支线定向耦合器小型化,用奇偶模分析方法分析理论S参量特性,应用微带电路仿真软件ADS进行仿真,比较理论分析计算绘制的S参量特性曲线与仿真获得的S参量特性曲线,设计出小型化的微波频域3dB微带双分支线定向耦合器。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.