三维纳米线SAW气体传感器及报警器设计

该文提出了一种全新的三维纳米线结构的声表面波(SAW)气体传感器,详细阐述了谐振型SAW器件上纳米线制备与修饰改性设计,传感器信号提取电路设计及报警器设计等过程,最后研制出气体报警器样品。并利用沙林（GB）模拟剂对传感器性能指标进行了测试,该传感器的响应阈值低达2 mg/m3,响应时间仅约为20 s。结果表明,与传统二维结构的SAW气体传感器相比,三维纳米线结构的SAW气体传感器在响应阈值和响应时间上均有很大的提高。     

声表面波化学战剂气体传感器的研究

介绍了声表面波气体传感器的基本工作原理和设计方法,通过SAW芯片拓扑结构、敏感膜、覆膜工艺和信号处理电路等方面的优化,研制出两种SAW化学战剂气体传感器,具有灵敏度高、响应和解吸附快,抗干扰能力强的特点。     

声表面波气体传感器研究进展

从机理模型构建、物理功能结构优化两方面出发对覆盖聚合物敏感膜的高性能声表面波(SAW)气体传感器技术进行了研究和探讨.实验研制了一种以具有高频率稳定性的声表面波延迟线型振荡器为传感元,结合六氟异丙醇基聚硅氧烷敏感膜的SAW传感器,开展了针对DMMP的检测实验,检测下限与检测灵敏度分别达到了0.04 mg/m3和485 Hz/mg/m3.     

433.92 MHz声表面波水果气体传感器研究

为监测水果在仓储及运输等过程中的新鲜程度,研制了一种以声表面波(SAW)单端谐振器为载体的SAW水果释放气体传感器。运用原位一步聚合法制备了聚苯胺气敏材料,在器件的敏感区域上用滴涂法涂覆敏感膜。实验结果表明,该传感器在室温条件下,对水果气体具有灵敏度高,响应恢复快等特性。对敏感机理进行了理论分析。     

基于延迟线理论的无源声表面波气体传感器

针对单输入、单输出及双输入、双输出换能器构成的声表面波(SAW)气体传感器存在的缺陷,研究一种无线无源、温度可测的气体传感器。基于声表面波的延迟线理论,利用叉指换能器的转换能量原理,对叉指换能器及反射器进行合理布局,并使3个反射器之间互为参考反射器,获得一种新型的声表面波气体传感器。该设计减少了传感器中信号间及环境温度等因素对测量的干扰,提高了传感器的灵敏度和测量准确度。该传感器具有结构简单、无线无源等特点,适合在不宜接触的复杂工程环境下工作。     

气体声表面波传感器的研究进展

主要从声表面波(SAW)结构和敏感膜的角度综述了SAW气体传感器的研究现状。重点分析了国外出现的换能器新型结构,对其优点进行了初步分析,并和传统的SAW气体传感器结构做了比较,指出这些新结构尽管存在一些缺点,目前还不能取代传统的通用式结构,但是在某些特殊场合具有传统结构所不具备的优点。在敏感膜方面,主要从新材料方面入手,分析了目前主要使用的敏感膜材料,并结合SAW气体传感器的发展趋势,总结出敏感膜的发展方向。同时,对SAW气体传感器的其他组成部分如衬底材料和信号处理电路也作了简单的回顾,最后结合国内外研究成果对SAW气体传感器的发展做了展望。     

一种新型高频率稳定度的SAW振荡器

作为声表面波(SAW)气体传感器的关键元件,SAW振荡器的频率稳定度直接影响到传感器的灵敏度和检测下限。因此,提高SAW振荡器的频率稳定度是传感器研究的关键。该文在ST石英基片上研制了一种具有低插入损耗(10 dB内)、单一模式控制的SAW双延迟线及振荡器,其频率稳定度达0.1×10-6量级,同时还分析了作为频控元件的延迟线品质因数及振荡电路温度对振荡器频率稳定度的影响。     

碳纳米管聚苯胺薄膜SAWSO2传感器的实验研究

以128°Y-LiNbO3晶体上实现的双声路声表面波(SAW)器件为载体,在器件的测量声路上制作了对SO2气体具有敏感作用的碳纳米管聚苯胺薄膜,提出了一种基于碳纳米管聚苯胺薄膜的SAW SO2气体传感器.该传感器中的双声路结构消除了因外界测量条件改变引起的测量误差,提高了传感器的可靠性和准确性.利用原位法制备的碳纳米管聚苯胺增加了SO2气体的吸附面积,提高了传感器的灵敏度.实验结果表明,基于碳纳米管聚苯胺薄膜的SAW SO2气体传感器在测量范围内对各种浓度的SO2气体具有好的响应特性;当输入体积分数为1×10-6时,传感器的响应灵敏度约为8.3 kHz,比单一聚苯胺薄膜高1.8 kHz.此外,该传感器也具有更好的线性特性.     

声表面波延迟线振荡器为核心的气体传感器

声表面波(SAW)器件的工作频率随基片表面上的负载质量变化而发生漂移,通常利用这一性质作气相分析与检测,已经有了若干用SAW延迟线器件制成的化学传感器。传感器表面涂着一层有化学选择性的薄膜,这一涂层则在化学分析时有选择地吸收待测气体分子,涂层在吸收了气体后发生一些物理变化,因而这种传感器的灵敏度与SAW延迟线表面上的涂层对气体的吸收量有关。许多实际使用的传感器是用双SAW延迟线组成的,它们集成在一片基体上,并在一个延迟线表面上涂上气体吸附薄膜,而另一个则不涂任何物质。 本文讨论了这种传感器的若干问题,如温度影响、响应时间以及频率变化与气体浓度间关系的非线性。最后提出了在传感器应用时的改进方法与措施。     

一种新型的角速率传感器--声表面波陀螺

声表面波(SAW)器件具有无源、无线、微型、抗冲击力强，灵敏度高等优点。用它制作角速率传感器——SAW陀螺已成为研究热点。概述了SAW陀螺的应用及发展；着重分析了SAW陀螺两种结构模式的工作原理；指出SAW陀螺设计的关键是如何得到合适的参考振动速度，而使其省掉悬浮振动机构成为简单的单平面结构；提出了亟待研究解决的几个问题。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.