溅射功率和氧分压对ITO薄膜光电性能的影响研究

采用直流反应磁控溅射法制备了氧化铟锡(ITO)透明导电薄膜,通过四探针、紫外可见分光光度计、X射线衍射(XRD)、霍尔效应仪、扫描电镜(SEM)等对薄膜样品进行了表征,研究了溅射功率和氧分压对ITO薄膜微观结构和光电性能的影响,结果表明:溅射功率对ITO的光电性能影响较小,沉积速率随着溅射功率的增大而加快;随着氧分压的升高,载流子浓度降低,霍尔迁移率先增大后减小,电阻率逐渐增大。在优化的工艺条件下,制备了在可见光区平均透过率达85%、电阻率为1×10-4Ω.cm的光电性能优良的ITO薄膜。     

直流磁控溅射工艺参数对掺钨氧化铟透明导电薄膜性能影响的研究

采用直流磁控溅射法制备了掺钨氧化铟(IWO)透明导电薄膜。研究了薄膜结构、表面形貌、光学和电学性能与各种制备参数之间的依赖关系。X射线衍射(XRD)谱分析结果表明随着基底温度的升高,薄膜的结晶性得到改善。原子力显微镜(AFM)测试结果表明薄膜颗粒均匀,表面平整。研究发现薄膜的电学性能对制备参数非常敏感。在基板温度为380℃的条件下所制备的样品在可见光区域(400~700 nm)的平均透射率(未扣除基底)均大于80%。获得的IWO薄膜最低电阻率为2.8×10-4 ohm.cm,对应载流子迁移率49 cm2V-1s-1,载流子浓度4.4×1020 cm-3,平均透射率83%。     

硒化温度对铜铟镓硒太阳能电池吸收层性能的影响

用预制膜硒化法制备铜铟硒系太阳能电池的吸收层CIGSe薄膜,用X射线荧光分析(XRF)、扫描电子显微镜(SEM)、X射线衍射分析(XRD)和拉曼谱分析(Raman)以及基于霍尔效应分别测定或观测CIGSe薄膜的成分、表面形貌、结构以及电阻率和少数载流子迁移率,研究了在近玻璃软化点520-560℃区间硒化温度对薄膜成分、表面形貌、结构和电学性能的影响。结果表明:当硒化温度在520-560℃时,CIGSe薄膜的成分和表面形貌保持不变,但是随着硒化温度的升高CIGSe薄膜中有序缺陷相(ODC)和Cu-Se短路相增加,提高了薄膜内的缺陷浓度,使薄膜的少数载流子迁移率降低、电阻率增大。     

射频反应磁控溅射法制备N掺杂p型氧化亚铜薄膜

通过射频反应磁控溅射方法在玻璃衬底上制备N掺杂的Cu2O薄膜,采用X射线衍射、分光光度计、X射线光电子能谱和霍尔效应等检测,研究了氮气掺杂对Cu2O薄膜性能的影响。结果表明:随着N原子的掺入,薄膜的结晶质量下降,光学带隙从2.28 eV升至2.47 eV左右,同时薄膜的电学性能趋于稳定。当N2/O2流量比率为0.6时,薄膜电阻率为1.5Ω.cm,空穴浓度为2.16×1019cm-3,霍尔迁移率为0.5 cm2.V-1.s-1。     

透明导电InSnGaMo氧化物薄膜光电性能研究

利用脉冲激光沉积法在石英衬底上制备出了可见光透过率高、电阻率极低的Ga,Mo共掺杂ITO基InSnGaMo复合氧化物薄膜。研究了衬底温度对薄膜结构、表面形貌、光电性能的影响。实验结果表明:衬底温度对InSnGaMo复合氧化物薄膜形貌、光电性能均有很大影响。X射线衍射、扫描电镜和霍尔测试结果表明,随着衬底温度的升高,薄膜晶粒度增大,电阻率快速下降,可见光平均透过率明显提高。当衬底温度为450℃时,InSnGaMo复合氧化物薄膜的电阻率最低为4.15×10-4Ω.cm,载流子浓度和迁移率最大分别为3×1020cm-3,45 cm2V-1s-1,在可见及近红外区平均透过率达92%,特别地,波长为362 nm时,最高透射率可达99%。     

射频溅射氧化锌薄膜晶体结构和电学性质

利用射频磁控溅射ZnO:Al(3wt%)陶瓷靶材制备ZAO薄膜,利用X射线衍射仪和霍尔测试仪分析了不同衬底温度和工作压强对薄膜结构和电学性能的影响.结果表明,随工作压强的降低,薄膜(002)优先取向增强,迁移率逐渐增大,当工作压强为0.2 Pa、衬底温度为200℃时,薄膜的电阻率为1.4×10-3Ω·cm.     

高迁移率透明导电In2O3:Mo薄膜

用直流磁控溅射法成功制备了高价态差掺钼氧化铟(IMO)透明导电薄膜.研究了氧分压,基板温度以及溅射电流对IMO薄膜结构和性能的影响.获得的IMO薄膜的最低电阻率为3.65×10-4 Ω·cm,载流子迁移率高达50 cm2V-1s-1,可见光区域的平均透射率(含玻璃基底)高于80%.X-ray衍射(XRD)研究表明IMO薄膜具有良好的结晶性.分析认为IMO薄膜的载流子迁移率主要受晶界散射的控制.     

柔性聚酰亚胺(PI)衬底上ITO薄膜的生长及其透明导电性能影响机制研究

采用直流磁控溅射法在聚酰亚胺(PI)柔性衬底上生长氧化铟锡(ITO)薄膜,采用XP-2探针台阶仪、X射线衍射(XRD)、霍尔测试仪、紫外-可见分光光度计等对ITO薄膜进行结构和光电性能表征.结果表明溅射功率和沉积气压是影响磁控溅射法生长ITO薄膜透明导电性能的主要因素,实验系统研究了溅射功率和沉积气压对ITO薄膜透明导...     

等离子体辅助铝诱导纳米硅制备多晶硅的研究

以超白玻璃为衬底,利用热丝化学气相沉积和磁控溅射法制备了Glass/nc-Si/Al叠层结构,置入管式退火炉中进行等离子体辅助退火.样品在氢等离子体氛围下进行了400,425和450℃不同温度,5h的诱导退火,用光学显微镜和拉曼光谱对样品进行了性能表征.结果表明随着诱导温度升高,样品的Si(111)择优取向越来越显著;晶粒尺寸不断增大,在450℃诱导温度下获得了最大晶粒尺寸约500μm的连续性多晶硅薄膜,且该温度下薄膜晶化率达97％;薄膜的结晶质量也随着温度的升高而不断提高.样品经450℃诱导后的载流子浓度p为5.8× 1017 cm-3,薄膜霍尔迁移率μH为74 cm2/Vs.还从氢等离子体钝化的角度分析了等离子体环境下铝诱导纳米硅的机理.     

退火对ZnO/Cu/ZnO透明导电薄膜性能的影响

室温下利用磁控溅射制备了ZnO/Cu/ZnO透明导电薄膜,采用X射线衍射(XRD)、原子力显微镜(AFM)、扫描电子显微镜(SEM)、霍尔效应测量仪和紫外-可见分光光度计研究了薄膜的结构、形貌、电学及光学等性能与退火温度之间的关系。结果表明:退火前后薄膜均具有ZnO(002)择优取向,随着退火温度的升高,薄膜的晶化程度、晶粒粒径及粗糙度增加,薄膜电阻率先降低后升高,光学透过率和禁带宽度先升高后降低。150℃下真空退火的ZnO/Cu/ZnO薄膜的性能最佳,最高可见光透光率为90.5%,电阻率为1.28×10-4Ω·cm,载流子浓度为4.10×1021cm-3。     

Atomic vapor deposition approach to In2O3 thin films

In2O3 thin films were grown by atomic vapor deposition (AVD) on Si(100) and glass substrates from a tris-guanidinate complex of indium [In(N(i)Pr2guanid)3] under an oxygen atmosphere. The effects of the growth temperature on the structure, morphology and composition of In2O3 films were investigated. X-ray diffraction (XRD) measurements revealed that In2O3 films deposited in the temperature range 450-700 degreesC crystallised in the cubic phase. The film morphology, studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM), was strongly dependent on the substrate temperature. Stoichiometric In2O3 films were formed under optimised processing conditions as was confirmed by X-ray photoelectron and X-ray excited Auger electron spectroscopies (XPS, XE-AES), as well as by Rutherford backscattering spectrometry (RBS). Finally, optical properties were investigated by photoluminescence (PL) measurements, spectroscopic ellipsometry (SE) and optical absorption. In2O3 films grown on glass exhibited excellent transparency (approximately 90%) in the Visible (Vis) spectral region.     

Characterizations of SnO2 and SnO2:Sb thin films prepared by PECVD

Structural characterizations of tin oxide (SnO₂) thin films, deposited by plasma-enhanced chemical vapor deposition (PECVD), were investigated with scanning electron microscope (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The results show that the films are porous, the crystalline structure transforms from crystalline to amorphous phase as deposition temperature changes from 500°C to 200°C, and the chemical component is non-stoichiometric (Sn:O is 1.0716 prepared at 450°C with a value of O₂ flow 3.5 l/min). Sheet resistance of the thin films decreases with increasing of deposition temperature. Whereas, sheet resistance increases with increasing of oxygen flow. Tin oxide doped with antimony (SnO₂:Sb) thin films prepared by same method have a better selectivity to alcohol than to carbon monoxide; the maximum sensitivity is about 220%. The gas-sensing mechanism of SnO₂ thin films is commentated.     

Y2O3-SnO2常温气敏薄膜的Sol-Gel制备及性能研究

以无机盐ＳnCl2.2H2O,Y(NO3)3.6H2O为原料,无水乙醇为溶剂,采用溶胶－凝胶工艺制备了Ｙ２Ｏ３掺杂的ＳnO２薄膜,采用差热－失重分析研究了Ｙ２Ｏ３掺杂的ＳnO2干凝胶粉末的热分解、晶体过程。研究了Ｙ２Ｏ３－ＳnO2薄膜的电学和气敏性能,从实验中得到了Ｙ２Ｏ３掺杂份量对ＳnO2薄膜电学及气敏性能的影响。实验表明Ｙ２Ｏ３掺杂的ＳnO2薄膜在常温下对ＮＯx具有较好的灵敏度的选择性,并具有较好的响应恢复性能,在常温下对Ｈ２Ｓ气体也具有一定的灵敏度。     

脉冲激光沉积ZrW2O8薄膜的制备和性能

采用脉冲激光沉积法在石英基片上沉积制备了ZrW2O8薄膜.用X射线衍射仪(XRD)、原子力显微镜(AFM)研究了不同衬底温度对薄膜结构组分、表面粗糙度和形貌的影响,用台阶仪和分光光度计测量薄膜的厚度和不同衬底温度下制备薄膜的透射曲线,用变温XRD分析了ZrW2O8薄膜的负热膨胀特性.实验结果表明:在衬底温度为室温、550℃和650℃下脉冲激光沉积的ZrW2O8薄膜均为非晶态,非晶膜在1200℃保温3min后淬火得到立方相ZrW2O8薄膜;随着衬底温度的升高,ZrW2O8薄膜的表面粗糙度明显降低;透光率均约为80%,在20～600℃温度区间内,脉冲激光沉积制备的ZrW2O8薄膜的负热膨胀系数为-11.378×10-6 K-1.     

O2/Ar气体流量比对射频磁控溅射HfO2薄膜的影响

采用射频磁控溅射法,以HfO2陶瓷作为靶材,在石英衬底上制备了HfO2薄膜.通过椭圆偏振光谱仪(SE)、X射线衍射(XRD)、场发射扫描电子显微镜(FE-SEM)研究了不同O2/Ar气体流量比对薄膜沉积速率、结构、形貌等的影响.结果表明,随着O2/Ar气体流量比从0增加到0.50,薄膜的沉积速率逐渐下降.O2/Ar气体...     

硅基Bi4Ti3O12薄膜的C-V特性研究

Bi4 Ti3O12是典型的层状钙钛矿结构铁电材料,具有优良的压电、铁电、热释电和电光等性能,可广泛应用于铁电存储器、压电和电光等器件.本文在硅衬底上利用溶胶凝胶法制备出Bi4 Ti3O12铁电薄膜,并且对其性能进行了研究.测量不同退火温度下得到的Ag/BTO/p-Si结构的C-V曲线,结果表明Bi4 Ti3O12薄膜在合适的制备工艺下可望实现极化型存储.     

Influence of annealing on the structure and stoichiometry of europium-doped titanium dioxide thin films

This work presents the influence of annealing on the structure and stoichiometry of europium (Eu)-doped titanium dioxide (TiO₂). Thin films were fabricated by magnetron sputtering from a metallic Ti-Eu target in oxygen atmosphere and deposited on silicon and SiO₂ substrates. After deposition the selected samples were additionally annealed in air up to 1070 K.Film properties were examined by means of X-ray diffraction (XRD), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) and the results were analyzed together with the undoped TiO₂ thin films prepared under similar technological conditions.XRD results showed that depending on the Eu content, as-deposited thin films consisted of the TiO₂-anatase or TiO₂-rutile.An additional annealing will result in the growth of anatase crystals up to 35 nm, but anatase to rutile phase transformation has not been recorded. AFM images display high quality and a dense nanocrystalline structure. From the XPS Ti2p spectra the 4+oxidation state of Ti was confirmed. The O1s XPS spectra displayed the presence of an O²⁻ photoelectron peak accompanied by an additional broader peak that originates from hydroxyl species chemisorbed at the sample surface. It has been found that Eu dopant increases the OH⁻ content on the surface of prepared TiO₂:Eu thin films. The calculated O/Ti ratio was in the range of 1.85-2.04 depending on the sample.     

Preparation and characterization of Ti/SnO(2)-Sb(2)O(3)-Nb(2)O(5)/PbO(2) thin film as electrode material for the degradation of phenol

In this work, a novel electrode of titanium substrate coated with mixed metal oxides of SnO(2), Sb(2)O(3), Nb(2)O(5) and PbO(2) was successfully prepared using thermal decomposition and electrodeposition. The surface morphology and the structure of the prepared thin film were characterized by scanning electronic microscopy (SEM) and X-ray diffraction (XRD), respectively. Experimental results showed that the structure of the prepared electrode might be described as a Ti/SnO(2)-Sb(2)O(3)-Nb(2)O(5)/PbO(2) thin film and its surface was mainly comprised pyramidal-shape beta-PbO(2) crystals. The modified electrode had higher oxygen evolution potential than that of other PbO(2) modified electrodes. Electrocatalytic oxidation of phenol in aqueous solution was studied to evaluate the potential applications of this electrode in environmental science. The phenol removal efficiency in an artificial wastewater containing 0.50g/L phenol could reach 78.6% at 20 degrees C and pH 7.0 with an applied electricity density of 20mA/cm(2) and treatment time of 120min. When 21.3g/L chloride was added to this wastewater, the removal efficiency could reach to 97.2%.     

新型脉冲激光能量计用无铅(Na_(1-x)K_x)_(0.5)Bi_(0.5)TiO_3铁电薄膜的制备及其激光感生热电电压信号的研究

采用脉冲激光沉积(PLD)技术,分别在LaA lO3(LAO)、(La,Sr)(A l,Ta)O3(LAST)及SrTiO3(STO)三种不同的单晶衬底上制备了一系列无铅(Na1-xKx)0.5B i0.5TiO3(x=0.00,0.08,0.19,0.30,NKBT)铁电薄膜材料。利用X射线衍射(XRD)仪对薄膜结构进行了分析,结果表明在单晶平衬底上生长的薄膜都是单取向生长的外延膜,其中摇摆曲线的半高宽(FWHM)显示在(La,Sr)(A l,Ta)O3单晶衬底上生长的薄膜结晶质量最好。另外,在20°倾斜的(La,Sr)(A l,Ta)O3单晶衬底上生长的(Na1-xKx)0.5B i0.5TiO3铁电薄膜中还首次观察到了激光感生热电电压(LITV)信号。发现在能量为0.48mJ/pulse的紫外脉冲激光辐照下,其最大激光感生热电电压为31mV,完全满足了制作脉冲激光能量计探测元件的要求,有望开发出可集成的新型脉冲激光能量计。     

Morphology-tailored synthesis of tungsten trioxide (hydrate) thin films and their photocatalytic properties

Tungsten trioxide hydrate (3WO(3)·H(2)O) films with different morphologies were directly grown on fluorine doped tin oxide (FTO) substrate via a facile crystal-seed-assisted hydrothermal method. Scanning electron microscopy (SEM) analysis showed that 3WO(3)·H(2)O thin films composed of platelike, wedgelike, and sheetlike nanostructures could be selectively synthesized by adding Na(2)SO(4), (NH(4))(2)SO(4), and CH(3)COONH(4) as capping agents, respectively. X-ray diffraction (XRD) studies indicated that these films were of orthorhombic structure. The as-prepared thin films after dehydration showed obvious photocatalytic activities. The best film grown using CH(3)COONH(4) as a capping agent generated anodic photocurrents of 1.16 mA/cm(2) for oxidization of methanol and 0.5 mA/cm(2) for water splitting with the highest photoconversion efficiency of about 0.3% under simulated solar illumination.