Co/ATO复合薄膜的结构与电磁光特性

以低成本的无机盐 SnCl₂·2H₂O、SbCl₃和Co(NO₃)₂·9H₂O 为原料,采用溶胶-凝胶法与浸渍提拉技术成功地制备出Co掺杂的ATO(Sb掺杂SnO₂)复合薄膜。利用XRD、SEM、四探针电阻仪、紫外-可见光分光光度计及振动样品磁强计(VSM)等测试方法对Co/ATO复合薄膜的结构与物性进行了表征与评价。结果表明：少量的Co 掺杂ATO复合薄膜仍保持四方金红石结构,复合薄膜中的晶粒分布均匀,其晶粒尺寸分布为4～7 nm;随着Co含量的增加,Co/ATO复合薄膜的电阻率呈现出先降低后提高,且当Co含量为0.5 mol %时,Co/ ATO复合薄膜的电阻率最低为5. 6×10- 3Ω·cm;在400～700 nm可见光范围内,平均透过率达到90 %以上,其光学带隙在3.9～4.0eV之间,且随着Co含量的增加,可见光透过率和光学带隙呈下降趋势;Co含量为3.0 mol%的ATO复合薄膜具有室温铁磁性,其矫顽力约为100Oe,磁性根源主要归结为磁性原子与基体载流子相互作用的结果。     

ATO导电功能薄膜的制备及在激光有机光导器件中的应用

以四氯化锡和三氯化锑制备纳米ATO粒子,再将其分散到热固型绝缘树脂中得到导电浆料,涂布在铝基上经干燥后得到具有一定电阻率的功能薄膜,在此薄膜表面依次涂布预涂层、载流子产生层和传输层,可获得带电能力高、暗衰减率小、残余电位低、光敏性优良的激光OPC器件。考察了纳米ATO粒子含量对薄膜电阻率、表面带电能力以及OPC器件性能的影响。结果表明ATO固含量在60%~70%、膜厚为12~14μm时,薄膜的电阻率为107~109Ω·cm,机械性能和耐环境性能优异。以此为基体制备的最优OPC器件V0=795.95 V,Vr=37.01V,DDR=26.27V/s,E1/2=7.69cm2/μJ。     

湿化学法制备ATO/TiO2复合粉体电阻率及导电机理的研究

采用湿化学共沉淀法,在TiO2颗粒表面包覆ATO制备ATO/TiO2复合粉体.研究了复合粉体的形态结构、ATO含量对ATO/TiO2复合粉体电阻率的影响,并对导电机理进行了讨论.研究结果表明,ATO以非晶态的形态靠范德华力与静电引力吸附在TiO2表面,ATO含量决定TiO2颗粒表面能否形成完整的导电网络基本框架.渗滤阈...     

二甲基二氯化锡前驱体CVD制备SnO2∶F薄膜及其性能研究

采用二甲基二氯化锡(DMTC)为新前驱体,通过常压CVD法在硼硅玻璃基板上制备SnO_2∶F透明导电薄膜,研究了DMTC、TFA和H_2O的含量对薄膜结构及光电性能的影响,研究表明当F/Sn物质的量比为1∶1、H2O/Sn物质的量比为3∶2时,制备出可见光透过率84.17%、方块电阻9.2Ω/□且结晶性能良好的多晶SnO_2薄膜。通过与单丁基三氯化锡(MBTC)为前驱体所制备薄膜的性能进行比较,结果表明,两种前驱体所制备薄膜均具有四方金红石结构,利用DMTC不仅可以制备出与MBTC性能相近的薄膜,同时薄膜表面更加均匀。     

ATO/CaSO4复合导电粉制备的研究

复合导电粉具有良好的导电性、稳定性和分散性,广泛用于防静电、电磁屏蔽等诸多领域.采用共沉淀法在硫酸钙晶须表面包覆一层ATO来制备ATO/CaSO4复合导电粉,并研究制备条件对导电粉电阻率的影响.结果表明,最佳制备条件为:Sb/Sn摩尔比1∶10,硫酸钙晶须浓度7.5％,水解温度35℃,水解pH6,煅烧温度650℃,煅烧时间2h.     

有机助剂对ATO性能的影响

以SnCl4·5H2O和SbCl3为主要成分,利用共沉淀法制备出ATO导电粉前驱体,在前驱体中分别加入过氧化二异丙苯、柠檬酸、己二酸和过氧化苯甲酰等有机助剂,煅烧得到ATO超细导电粉。经过粒度和导电性分析,加入过氧化二异丙苯或过氧化苯甲酰的ATO导电粉粒径和电阻率均明显降低;四种助剂对ATO导电粉在水为分散剂时的电导率影响不大。     

第二组元掺杂对ATO纳米粉体电学和光学性能的影响

以醇盐水解法制备掺杂第二组元金属氧化物的ATO纳米粉末,通过高速剪切、超声波方法制备分散均匀的ATO浆料,用该浆料以匀胶法在玻璃片上镀膜.对粉末用XRD、TEM、SEM进行了检测.粉末电阻率用数字式微欧表测量,以多功能光谱仪测定不同波长下的薄膜的透射率.结果表明,Cr2O3增大ATO纳米粉末晶粒尺寸,对ATO粉体电阻率急剧增加,搀杂ZnO增加ATO纳米粉末晶粒尺寸,但降低ATO粉末的电阻率,搀杂Fe2O3能大大减少ATO纳米粉末晶粒长大,当Fe2O3搀杂量超过一定值时使电阻率急剧上升,3种氧化物均降低ATO薄膜的透射率,其程度为Cr2O3＞Fe2O3＞ZnO.     

Effects of heat treatment temperature on infrared and visible light stealth properties of Bi203/ATO mixed burning filler

采用固相法制备了Bi2O3/ATO复合功能填料,借助于XRD、SEM、分光光度计和辐射率仪研究了热处理温度分别对复合功能填料的物相组成、微观形貌、可见光及红外隐身性能的影响。结果表明,随着热处理温度的升高,复合功能填料的红外辐射率先下降后升高,当热处理温度为800℃时,复合功能填料的红外辐射率最低,达到了0.67。填料的最高反射峰出现在黄橙光范围内,但是,样品在可见光区的反射峰面积和平均反射率均随着热处理温度的升高逐渐增大。因此,复合功能填料的颜色亮度可以根据煅烧温度进行调节,适于制备多色红外迷彩涂料。     

热处理温度对Bi2O3/ATO复合功能填料红外-可见光兼容隐身性能的影响

采用固相法制备了Bi2O3/ATO复合功能填料,借助于XRD、SEM、分光光度计和辐射率仪研究了热处理温度分别对复合功能填料的物相组成、微观形貌、可见光及红外隐身性能的影响。结果表明,随着热处理温度的升高,复合功能填料的红外辐射率先下降后升高,当热处理温度为800℃时,复合功能填料的红外辐射率最低,达到了0.67。填料的最高反射峰出现在黄橙光范围内,但是,样品在可见光区的反射峰面积和平均反射率均随着热处理温度的升高逐渐增大。因此,复合功能填料的颜色亮度可以根据煅烧温度进行调节,适于制备多色红外迷彩涂料。     

膜厚对SnO2∶Sb薄膜红外光学性能的影响

采用溶胶-凝胶法在玻璃基底上制备了Sb掺杂SnO_2(SnO_2∶Sb)薄膜。研究了膜厚对SnO_2∶Sb薄膜红外光学性能的影响,利用X射线衍射仪、分光光度计、霍尔效应测试系统对薄膜样品进行表征和测试。结果表明:SnO_2∶Sb薄膜为四方金红石型结构;当膜厚为1220nm时,薄层电阻最小,为157Ω/□;在红外波段,透射率随膜厚的增加显著下降,当膜厚为890nm时,在波长2000nm处,透射率接近于0,膜厚为1220nm时,在波长1750nm处,透射率为0。     

柱状晶形貌TiO2膜厚对FTO/TiO2镀膜玻璃光催化活性影响

采用溶胶凝胶法,在FTO(SnO2:F)低辐射镀膜玻璃衬底上制备了柱状晶体结构的TiO2薄膜,获得双层结构FTO/TiO2镀膜玻璃样品.研究了TiO2薄膜厚度对FTO/TiO2镀膜玻璃样品的光催化活性、低辐射性能以及透光性能的影响.结果表明,FTO/TiO2镀膜玻璃样品光催化活性随着TiO2薄膜厚度的增加先升高后下降,在TiO2薄膜厚度为300 nm时光催化活性最佳;低辐射性能随着TiO2薄膜厚度的增加而下降,但TiO2薄膜厚度为300 nm时仍然具备一定的低辐射性能;透光性能与TiO2薄膜膜厚的关系不大,可见光透射比保持在72%左右;表面平均粗糙度约为1 nm,表面光滑,不易沾染油污灰尘.该镀膜玻璃在保证低辐射建筑节能和透光的前提下,兼具光催化自清洁功能,具有很好的应用前景.     

Fluorine-doped tin oxide films grown by pulsed direct current magnetron sputtering with an Sn target

Fluorine-doped tin oxide (FTO) films have been deposited by pulsed DC magnetron sputtering with an Sn target. Various ratios of CF4/O2 gas were injected to enhance the optical and electrical properties of the films. The extinction coefficient was lower than 1.5×10(-3) in the range from 400 to 800?nm when the CF4O2 ratio was 0.375. The resistivity of fluorine-doped SnO2 films (1.63×10(-3)?Ω?cm) deposited at 300?°C was 27.9 times smaller than that of undoped SnO2 (4.55×10(-2)?Ω?cm). Finally, an FTO film was consecutively deposited for protecting the oxidation of indium tin oxide films. The resistivity of the double-layered film was 2.68×10(-4)?Ω?cm, which increased by less than 39% at a 450?°C annealing temperature for 1?h in air.     

Effects of calcination temperatures on photocatalytic activity of SnO2/TiO2 composite films prepared by an EPD method

SnO2/TiO2 composite films were fabricated on transparent electro-conductive glass substrates (F-doped SnO2-coated glass:FTO glass) via an electrophoretic deposition (EPD) method using Degussa P25 as raw materials, and were further characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscope (FESEM), UV-vis diffuse reflectance spectra and Photoluminescence spectra (PL). XRD and XPS results confirmed that the films were composed of TiO2 and SnO2. FESEM images indicated that the as-prepared TiO2 films had roughness surfaces, which consisted of nano-sized particles. The effects of calcination temperatures on the surface morphology, microstructures and photocatalytic activity of SnO2/TiO2 composite films were further investigated. All the prepared SnO2/TiO2 composite films exhibited high photocatalytic activities for photocatalytic decolorization of Rhodamine-B aqueous solution. At 400 degrees C, the SnO2/TiO2 composite films showed the highest photocatalytic activity due to synergetic effects of low sodium content, good crystallization, appropriate phase composition and slower recombination rate of photogenerated charge carriers.     

Characterization of transparent conductive ITO, ITiO, and FTO films for application in photoelectrochemical cells

Transparent conductive In(2-x)Sn(x)O3 (ITO) and In(2-x)Ti(x)O3 (ITiO) films were prepared via RF magnetron sputtering on soda-lime glass substrates at 300 degrees C and investigated with respect to their photoelectric conversion performance compared with the commercial F:SnO2 (FTO) glass. The near infrared ray transmittance of ITiO was highest for wavelengths over 1000 nm compared with those of ITO and FTO. Photoelectrochemical cells (PECs) were fabricated using ITiO film, ITO film, and FTO glass. The photoelectric conversion efficiency (eta) of the PECs samples using ITiO was 5.64%, whereas 2.73% was obtained from the PEC samples with ITO, both at 100 mW/cm2 light intensity. The impedance measurement was also used to explain the electrochemical performance of the PECs with various TCO glasses.     

Effect of thickness on nanostructured SnO2 thin films by spray pyrolysis as highly sensitive H2S gas sensor

Nanostructured SnO2 thin films were prepared by spray pyrolysis technique onto glass substrates with different thickness by varying quantity of precursor solution. The structural, optical and electrical properties of these films have been studied. The crystallographic structure of the films was studied by X-ray diffraction (XRD). It is found that the films are tetragonal with (110) orientation. The grain size increases with thickness. Atomic Force Microscopy (AFM) showed that the nanocrystalline nature of the films with porous nature. The grain size increased 14 to 29 nm with increase in film thickness. The studies on the optical properties show that the direct band gap value decreases from 3.75 to 3.50 eV. The temperature dependence of the electrical conductivity was studied. The activation energies of the films are calculated from the conductance temperature characteristics. The nanostructured SnO2 thin films were used as sensing layers for resistive gas sensors. The dependence of gas sensing properties on the thickness of SnO2 thin films was investigated. The gas response of the SnO2 thin films towards the H2S gas was determined at an operating temperature of 150 degrees C. The sensitivity towards H2S gas is strongly depending on surface morphology of the SnO2 thin films.     

Effect of N<Subscript>2</Subscript> gas annealing and SiO<Subscript>2</Subscript> barrier on the optical transmittance and electrical resistivity of a transparent Sb-doped SnO<Subscript>2</Subscript> conducting film

During the fabrication process of transparent conducting thin films of ATO (antimony-doped tin oxide) on a soda lime glass substrate by a sol-gel dip coating method, the effects of the SiO₂ buffer layer formed on the substrate and N₂ annealing treatment were investigated quantitatively. The deposited ATO thin film was identified as a crystalline SnO₂ phase and the film thickness was about 100 nm/layer at a withdrawal speed of 50 mm/min. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin film that was deposited on SiO₂ buffer layer/soda lime glass and then annealed under nitrogen atmosphere were 84% and 5.0 × 10^–3cm, respectively. The XPS analysis confirmed that a SiO₂ buffer layer inhibited Na ion diffusion from the substrate, preventing the formation of a secondary phase such as Na₂SnO₃ and SnO and increasing Sb ion concentration and ratio of Sb⁵⁺/Sb³⁺ in the film. It was found that N₂ annealing treatment leads to the reduction of Sn⁴⁺ as well as Sb⁵⁺, however the reduction of Sn⁴⁺ is more effective, and consequently results in a decrease in the electrical resistivity to produce excellent electrical properties in the film. © Springer Science + Business Media, Inc.     

锑掺杂氧化锡薄膜的制备及其对硅基太阳能电池工作温度的影响

硅基太阳能电池占据着光伏发电的最大份额, 但是在阳光下其工作温度过高会降低电池效率和功率输出, 因此降低硅基太阳能电池在阳光下的工作温度具有重要意义。本研究以氯化亚锡和三氯化锑为原料, 通过简单的溶胶-凝胶法制备锑掺杂氧化锡(ATO)薄膜, 将其作为硅电池盖板, 研究了锑(Sb)掺杂量和薄膜厚度对薄膜红外阻隔性能和硅电池降温性能的影响。研究表明, ATO薄膜的红外遮蔽性能随薄膜厚度增加而提高, 但可见光透过率随之降低。用AM1.5太阳光持续照射30 min后, 使用旋涂1~4层ATO薄膜盖板的硅电池温度比使用普通玻璃盖板的电池最大降低2.7 ℃, 晶硅电池效率可以保持在10.79%以上。此外, 使用10mol%锑掺杂的3层ATO薄膜盖板的硅电池在连续光照30 min后, 温度比使用普通玻璃盖板最大降低1.5 ℃, 效率提高了0.43%。     

Electrical conductivity of thin metallic manganese films

Thin metallic Mn films of various thicknesses were thermally vapour-deposited on glass substrates at room temperature in a high vacuum. The electrical conductivity of these Mn films was measured in situ as a function of film thickness and annealing temperature. The experimental results indicate that the electrical resistivity decreases as the film thickness and annealing temperature increase. The calculated values of the activation energy for electric conduction decrease as the film thickness increases. The mean free path and mobility for charge carriers, and the electrical resistivity of infinitely thick films, were calculated as a function of temperature; they are in good agreement with the theoretical relationships.