Performance of the SIRAD ion electron emission microscope

An axial ion electron emission microscope (IEEM) is now working at the SIRAD irradiation facility of the INFN Laboratories of Legnaro (Italy). The IEEM is used to precisely reconstruct the impact points of single ions, information that may be used to determine the areas of a microelectronic device under test that are sensitive to single event effects (SEE). After describing the setup briefly reviewing its working principles, we show our first time resolved ion induced electron emission images of standard calibration targets. We also discuss a preliminary measurement of ion impact detection efficiency of the IEEM system and the available trigger signals for SEE studies. We finally make an assessment of ion electron emission microscopy at SIRAD and indicate future developments.     

Detection efficiency and spatial resolution of the SIRAD ion electron emission microscope

An axial ion electron emission microscope (IEEM) has been built at the SIRAD irradiation facility at the 15 MV Tandem accelerator of INFN Legnaro National Laboratory (Padova, Italy) to obtain a micrometric sensitivity map to single event effects (SEE) of electronic devices. In this contribution we report on two experiments performed with the IEEM. Si₃N₄ ultra-thin membranes with a gold deposition were placed on the device under test (DUT) to ensure a uniform and abundant secondary electron emission In the first experiment we measured an IEEM ion detection efficiency of 83% with a ⁵⁸Ni (220 MeV) beam, in good agreement with the expected value. The second experiment allowed us to estimate the lateral resolution of the IEEM. The positions of ion induced single event upsets (SEU) in a synchronous dynamic random access memory (SDRAM), used as a reference target, were compared with the corresponding ion impact points reconstructed by the IEEM. The result (FWHM ～4.4 μm with a ⁷⁹Br beam of 214 MeV) is encouraging because of the residual presence of distortions of the image and mechanical vibrations.     

Ion beam characterization of advanced luminescent materials for application in radiation effects microscopy

The ion photon emission microscope (IPEM) is a technique developed at Sandia National Laboratories (SNL) to study radiation effects in integrated circuits with high energy, heavy ions, such as those produced by the 88” cyclotron at Lawrence Berkeley National Laboratory (LBNL). In this method, an ion-luminescent film is used to produce photons from the point of ion impact. The photons emitted due to an ion impact are imaged on a position-sensitive detector to determine the location of a single event effect (SEE). Due to stringent resolution, intensity, wavelength, decay time, and radiation tolerance demands, an engineered material with very specific properties is required to act as the luminescent film. The requirements for this material are extensive. It must produce a high enough induced luminescent intensity so at least one photon is detected per ion hit. The emission wavelength must match the sensitivity of the detector used, and the luminescent decay time must be short enough to limit accidental coincidences. In addition, the material must be easy to handle and its luminescent properties must be tolerant to radiation damage. Materials studied for this application include plastic scintillators, GaN and GaN/InGaN quantum well structures, and lanthanide-activated ceramic phosphors. Results from characterization studies on these materials will be presented; including photoluminescence, cathodoluminescence, ion beam induced luminescence, luminescent decay times, and radiation damage. Results indicate that the ceramic phosphors are currently proving to be the ideal material for IPEM investigations.     

Elastic recoil detection analysis on the ANSTO heavy ion microprobe

The heavy ion microprobe at the Australian Nuclear Science and Technology Organisation is capable of focussing heavy ions with an ME/q² of up to 100 amu MeV. This makes the microprobe ideally suited for heavy ion elastic recoil detection analysis (ERDA). However, beam currents on a microprobe are usually very small, which requires a detection system with a large solid angle. We apply microbeam heavy ion ERDA using a large solid angle ΔE−E telescope with a gas ΔE detector to layered structures. We demonstrate the capability to measure oxygen and carbon with a lateral resolution of 20 μm, together with determination of the depth of the contamination in thin deposited layers.     

AODO: Secondary ion emission and surface modification

In order to study the sputtering of secondary ions from well characterized surfaces, we constructed a new UHV system named AODO. It consists of a detector chamber, a target preparation and analysis chamber, and a target transfer rod. We present the lay-out of this new instrument. The detector allows measuring the time-of-flight of emitted secondary ions and their position on a 2D imaging detector (XY-TOF imaging technique). The analysis chamber can be used to study surface modification by means of LEED (low energy electron diffraction). We show preliminary results of the evolution of the LEED patterns as a function of the projectile fluence during irradiation of HOPG (highly oriented pyrolytic graphite) with slow Xe¹⁴⁺ ions at ARIBE (the low energy, highly charged ion beam line of the French heavy ion accelerator GANIL).     

Ionoluminescence decay measured with single ions

A new ion beam analysis-based, single ion technique called the time to first photon has been developed to measure the decay of the luminescence signal of phosphors. Such measurements are currently needed to study luminescence decay mechanisms following high-density excitations and to identify strongly luminescent phosphor coatings with short lifetimes for ion photon emission microscopy (IPEM). The samples for this technique consist of thin phosphor layers placed or coated on the surface of PIN diodes. Single ions from an accelerator strike this sample and simultaneously create ion beam induced luminescence (IBIL) from the phosphor that is measured by a single-photon-detector, and an ion beam induced charge collection (IBICC) signal in the PIN diode. In this case, the IBICC signal provides the start pulse and the IBIL signal the stop pulse to a time to amplitude converter. It is straightforward to show that this approach also measures a signal proportional to activity versus time with an accuracy of 5% as long as the number of detected photons per ion is less than 0.1, which usually requires the use of absorbers for the IBIL detector or electronic discrimination for the IBIL signals. Details of the new analysis are given together with examples of luminescence decay measurements of several ceramic phosphors being considered to coat IPEM samples. IPEM is currently being developed at Sandia National Laboratory (SNL), the University of North Texas in Denton, and the Universities and INFN of Padova and Torino.     

ELECTRON TRANSFER COLLISION OF NEON IONS WITH Ne IN A RF ION TRAP

The pulsed electron beam rf ion stroage system is used to study neon ions electron transfer,The rate coefficients for electron transfer of the neon ions with the neon gas are measured.the results are better than those in other ion storage system.     

Fabrication of a polymer with three-dimensional structure by the ion beam graft polymerization method

The graft polymerization method is one of the most effective techniques to produce a new polymer with unique function. To produce the polymer, we conducted experiments on radiation graft polymerization using ion beams of several hundred keV energy. A high density polyethylene (PE) film was irradiated with H⁺ beams, then, graft polymerization with monomer solution such as acrylic acid or acrylonitrile was conducted. Radicals generated by the interaction between the beam ions and the PE molecules become the starting point of the graft polymerization. Since the range in PE depends on ion energy, the density distribution of the graft chain can be controlled by the ion energy. Using a mask which restricts the ion beam incidence, PE sheets containing graft chains only in the unmasked area were obtained. Multiple ion beam graft polymerization can produce a polymer which has some functional bases at specified position. We have demonstrated the production of a polymer film with a three-dimensional structure.     

Ion-luminescence properties of GaN films being developed for IPEM

Radiation effects microscopy (REM) for the next generation integrated circuits (ICs) will require GeV ions both to provide high ionization and to penetrate the thick overlayers in present day ICs. These ion beams can be provided by only a few cyclotrons in the world. Since it is extremely hard to focus these higher-energy ions, we have proposed the ion photon emission microscope (IPEM) that allows the determination of the ion hits by focusing the emitted photons to a position sensitive detector. The IPEM needs a thin luminescent foil that has high brightness, good spatial resolution and does not change the incident ion’s energy and direction significantly. Available organic-phosphor foils require a large thickness to produce enough photons, which results in poor spatial resolution. To solve this problem, we have developed thin, lightly doped n-type GaN films that are extremely bright. We have grown high quality GaN films on sapphire using metal organic chemical vapor deposition (MOCVD), detached the films from the substrate using laser ablation, and made them self-supporting. The smallest foils have 1 mm² area and 1 μm thickness. The optical properties, such as light yield, spectrum and decay times were measured and compared to those of conventional phosphors, by using both alpha particles from a radioactive source and 250 keV ions from an implanter. We found that the GaN performance strongly depends on composition and doping levels. The conclusion is that 1-2 μm GaN film of a 1 mm² area may become an ideal ion position detector.     

Guiding of argon ions through a tapered glass capillary

We report results from our recent experiments on guiding of Ar⁸⁺ ions through a single tapered glass capillary with an inlet diameter of 1 mm, an outlet diameter of 0.15 mm and a length of 45 mm. The profile width of the transmitted ion beam and the guiding power of the used glass capillary has been measured at a kinetic energy in the range of 8 keV up to 60 keV using a position sensitive detector. The charge up of the capillary and the evolution of the guiding effect is shown for a tilt angle of Ψ = 4°. The charge up of the inner walls of the tapered glass capillary causes a compression of the incident ion beam by a factor of 8. We found high guiding angles and small profile width of the transmitted ion beam in comparison to the transmission of highly charged ions through nanocapillaries in thin foils. A suppression of the transmission at small tilt angles and low kinetic energies has been observed.     

Development of enhanced depth-resolution technique for shallow dopant profiles

A rapid shrinkage in the minimum feature size of integrated circuits requires analysis of dopants in their shallow source–drain and their extensions with an enhanced depth resolution. Rutherford backscattering spectroscopy (RBS) combining a medium-energy He ion beam with a detector of improved energy resolution should meet the requirement of a depth resolution better than 5 nm at a depth of 10–20 nm in the next 10 years. A toroidal electrostatic analyzer of 4×10⁻³ energy resolution has been used to detect the scattered ions of a medium-energy He ion beam. Five keV As⁺ implanted Si or SiO₂ samples were measured. Depth profiling results using the above technique are compared with those of glancing-angle RBS by MeV energy He ions. Limitations in the energy resolution due to various energy-spread contributions have been clarified.     

模拟电路的单粒子瞬时效应

综合介绍一种新的单粒子作用现象.模拟电路在单个重离子撞击下,在输出端产生瞬时信号,这种瞬时扰动可能影响到连接模拟电路输出端的电路,例如运算放大器的输出可能连接到数字计数器的输入端,由重离子引起放大器足够大的瞬时输出脉冲可能增加计数器的计数.另外,这种输出端的瞬时电压信号可能改变其它电路的状态.     

Recent progress in JAERI single ion hit system

Single ion hit system has been installed in heavy ion microbeam system in JAERI Takasaki for analysis of single event phenomenon in semiconductor devices. The detection and control of a single ion injection to a target have been achieved by combining a beam pulsing system with a gated detection system. The microscopic observation of a track detector hit by a single ion periodically, shows the controls of the hit positions and numbers of incident ions are successful.     

Ion microbeam radiation system

An ion microbeam radiation test system has been built for studying radiation-induced charge collection and single event upsets in advanced semiconductor circuits. With this system, it is possible to direct an ion beam of a diameter as small as 1 μm onto a circuit or test structure with a placement accuracy of 1 μm. The components of the system and its operation are described. Applications are described which demonstrate the capabilities of the system     

低剂量离子在物体样品中透射行为的研究

利用金硅面垒探测器测量低剂量率的Ｆ离子在生物组织样品（洋葱内表皮和芸豆种皮）中的透射能谱,用来研究荷能离子在生物样品中的能损和深度分布,实验中Ｆ离子能量为９００ｋｅＶ－６ＭｅＶ剂量率大约为１０＾４ｉｏｎｓ／ｓ·ｃｍ＾２。用ＳＥＭ观测样品在离子束轰击下可能发生的损伤,实验中测量了了不同能量离子样品中的透射能谱,利用ＳＩＮＲＡ对测量得到的透射能谱进行了拟合分析,并讨论了生物样品的特殊结构对透射能谱和离     

离子束合成法形成的Si／CoSi2／Si／SiO2／Si（100）结构

用离子束合成法先后在Si(100)衬底中形成了连续的SiO_2及CoSi_2埋层,从而形成了复合的Si/CoSi_2/Si/SiO_2/Si(100)结构。卢瑟福背散射、沟道技术及用扫描电镜所作的电子通道花样被用来对这一结构形成的各个阶段进行分析。这一结构可望用于今后新型的微电子器件、光电器件及三维集成电路等。     

Optimizing the geometry of a negative ion sputter source

In order to avoid isotope fractionating effects due to slight fluctuations in the position, direction or divergence of the emerging beam, the emittance of an AMS ion source has to be lower than the acceptance of the following beam handling system. The emittance of a negative ion sputter source is determined by the energy spread of the sputtered ions and by its extraction geometry. For various configurations of the latter, we have calculated particle trajectories. Greatly reduced aberrations are attained if the electric field close to the emitting surface is nearly uniform and only weakly focussing and if the acceleration takes place in at least two lens sections. The single acceleration gap of our Hortig-type ion source [1] has therefore been replaced by a two-stage accelerating lens. Further, the curvature of the field at the surface of the sputter target is controlled by an additional electrode.     

真空室内凹对电磁分离器离子光学特性的影响

大型同位素电磁分离器真空室在大气压力作用下会出现严重的内凹现象。本文利用数值模拟方法,分析了内凹对磁场分布和离子束聚焦特性的影响,指出了一条消除内凹影响的有效途径。     

重离子和脉冲激光模拟单粒子翻转阈值等效性研究

根据重离子和脉冲激发诱发单粒子翻转机理,分析了重离子和脉冲激光模拟单粒子翻转阈值（激光能量与重离子线性能量转移（LET））等效方法，得出脉冲激光与重离子单粒子翻转阈值等效计算公式。应用实验室的激光模拟单粒子效应试验系统，开展了几种器件和集成电路的单粒子翻转实验研究。利用获得的计算公式计算激光等效LET阈值，并与国内外重离子实测数据进行比较。结果表明，脉冲激光能量等效LET阈值与重离子试验LET阈值较为一致。     

The pulsed beam facility at the Tandetron accelerator in Florence

An electrostatic chopper has been installed in the LABEC laboratory (Sesto Fiorentino) along one of the beamlines of the new Tandetron accelerator. The chopper allows us the creation of a pulsed beam, from a continuous one, with a variable and finely controllable number of particles in each pulse. The facility can be tuned to obtain an average of one ion per pulse. This feature allows us the study of the basic processes of particle-target interactions, useful when performing ion beam analysis. Increasing the beam current, bunches up to thousands of ions can be obtained with a total energy being always an integer multiple of the one of the single ion. This configuration can be employed e.g. in a detector energy calibration.