氧化铝增强的PdSe2/Si异质结光电探测器

为了降低暗电流,通过原子层沉积(ALD)生长了一层氧化铝(Al₂O₃)隧穿层,制备了PdSe₂/Al₂O₃/Si异质结光电探测器.通过优化Al₂O₃层的厚度,使得该探测器实现了高速和宽光谱响应.研究结果表明,在波长为808 nm的光照射和-2 V偏压下,所制备的光电探测器与未生长Al₂O₃的器件相比,暗电流降低了约3个数量级,器件的光响应度达到了约为0.31 A/W,对应的比探测率约为2.5×10¹² Jones,器件在零偏压下表现出明显的自驱动效应.经过循环测试1 200次后,器件保持良好的光响应.器件响应的上升时间和下降时间分别为7.1和15.6μs.结果表明,在二维层状半导体材料与Si之间引入Al₂O₃隧穿层,可以有效地降低器件的暗电流,有利于高性能的Si基光电探测器的制备.     

Al/ZnO/Ag肖特基二极管的制备与光电特性

以Si(111)为衬底,采用射频磁控溅射与高温退火工艺制备ZnO薄膜.利用X射线衍射、扫描电子显微镜对ZnO薄膜进行表征及结构分析.结果表明,ZnO薄膜具有高度的C轴择优取向,样品表面光洁、平整.在此ZnO薄膜工艺条件下,在石英玻璃衬底上成功制备了Al/ZnO/Ag肖特基二极管紫外探测器.对该紫外探测器的暗电流和365 nm波长光照下的光电流进行了测试.室温下结果表明:Ag和ZnO已形成肖特基接触,根据I-V、C-V测试得到的有效势垒高度分别为0.60 eV和0.53 eV,理想因子为12.6,理论计算得到的空间电荷密度为3.1×1016cm-3.无光照3V偏压时,暗电流为24.19 mA,当用λ=365 nm的光照射Ag/ZnO肖特基结,在3 V偏压时,光生电流为3.28 mA,表明Al/ZnO/Ag紫外探测器有明显的光响应特性.     

ZnO紫外光电导型探测器的制备与研究

通过在MOCVD方法生长的ZnO薄膜上沉积Al/Au叉指状电极制得ZnO紫外光电导型探测器,对该探测器的欧姆接触特性、光电响应特性以及光谱响应特性进行了测试研究,并根据AES、XPS分析结果对测试结果进行了理论分析．结果表明,即使在未进行合金工艺的情况下,非合金Al/ZnO金属体系与n型ZnO也可以形成良好的欧姆接触,正向偏压下,探测器的暗电流与光电流随外加偏压线性增加;探测器对紫外光潜具有明显的响应,其响应截止波长为368nm．XPS分析表明,在ZnO薄膜表面存在着一定的O空位和Zn间隙,非化学计量的O与Zn之比对器件的响应时间有影响．     

ε-Ga2O3/SiC异质结自驱动型日盲光电探测器

构建合适的异质结是改善光电探测器性能的一种有效方法,为了提升超宽禁带半导体Ga₂O₃薄膜日盲光电探测器的光电性能,采用金属有机化学气相沉积技术在SiC单晶衬底上成功异质外延了高质量的ε-Ga₂O₃薄膜,并制备了ε-Ga₂O₃/SiC异质结光电探测器。探究外延薄膜的晶体结构和吸收光谱可知,单一取向的ε-Ga₂O₃薄膜对日盲区紫外光表现出强烈的吸收特性。得益于较强的内建电场,制备的异质结光电探测器件具有出色的自驱动光电响应特性。在无外置电场条件下具有稳定的深紫外光响应,其具有暗电流低、灵敏度高的特点。在0V偏压、254nm紫外光辐照下,探测器光暗电流比高达10⁴,光响应度达到0.3mA/W,比探测率达到1.45×10¹⁰cm·√Hz/W。ε-Ga₂O₃/SiC自驱动光电探测器的成功研制可为实现零能耗探测器件的制备提供理论思路和实验指导。     

基于Pt电极的TiO2紫外探测器研究

针对宽禁带半导体紫外探测器响应不够灵敏和响应度偏低等问题,将具有高功函数的Pt电极引入TiO2紫外探测器,采用溶胶凝胶法制备了纳米TiO2薄膜。以金属Pt为电极,采用磁控溅射的方法,将Pt电极溅射在TiO2纳米薄膜上,制作了MSM（Metal-Semiconductor-Metal）型紫外探测器件。在5 V偏压下,探测器的暗电流为4.5 nA,260 nm波长光照下的光电流为5.7μA。在260 nm的紫外光照射下,探测器的响应度达到最大值,约为447 A/W,与其他紫外探测器（200 A/W左右）的响应度均值相比有了很大的提升。最后,设计外围电路,制作出功能完整的紫外强度测试仪。实验表明,该探测器成功地解决了传统宽禁带半导体紫外探测器灵敏度及响应度偏低等问题。     

全耗尽SOI MOSFET自加热效应的模拟研究

利用Silvaco软件模拟全耗尽SOI n沟道MOSFET器件的自加热效应.在温度300～500K、栅偏压2～10V范围内研究了该器件的ID-VD特性和器件的温度分布规律.在低温和高栅偏压时,SOI结构中自加热效应明显.此现象归因于低温和高栅偏压时,SOI n-MOSFET中的漏电流密度大,热载流子使品格升温迅速.     

热退火对氮铝镓MSM结构紫外光电探测器性能的影响

宽带隙半导体合金材料AlxGa1-xN成为紫外光电探测器的优选材料,本文通过金属有机气相外延（MOCVD）的方法在Al2O3衬底上制备出Al0.25Ga0.75N合金薄膜,并通过紫外曝光和湿法腐蚀的方法,制备出平面对称结构的金属-半导体-金属（MSM）又指电极结构,通过器件在氮气气氛下不同温度的退火,使得器件的响应度得到很大的提高,在1V偏压下达到3.25A/W,同时对器件的其它参数进行了深入的分析。     

WS_2光电探测器光电响应特性研究

为探究WS_2的光电探测器光电响应特性,本文以机械剥离法制备WS_2晶体薄膜,采用定位转移法在氧化硅片衬底上制备WS_2光电探测器,对WS_2晶体薄膜进行表征分析,测试并分析了器件的光电性能。实验结果表明:对波长260～850 nm范围的光表现出明显的光响应特性,在630 nm波长的光照条件下的光电流、光响应度以及光探测率最高;器件的上升时间和衰减时间分别为0.7 ms和0.5 ms。文中制备的光电探测器具有具有较好的光电响应特性。     

电容式非制冷红外焦平面阵列设计及优化

提出一种基于MEMS工艺弯折双材料悬臂梁结构的电容式非制冷红外焦平面成像阵列（FPA,Focal Plate Array）。并利用软件CoventorWare对器件的物理学特性进行有限元模拟分析。发现FPA的温度响应度和位移响应度与辐射能量呈线性关系;得到热时间常数、位移、温度灵敏度与铝膜与二氧化硅厚度比的关系,并得出当比率为0.5～0.6时位移响应最大,100μm×100μm和50μm×50μm两种尺寸器件的位移灵敏度峰值分别为0.061nm/pW.μm^-2和0.008nm/pW.μm^-2;随着器件尺寸的增大,其探测能力增强,瞬态响应降低;计算了吸收面与探测极板间的吸合附电压,得到100μm×100μm面板的吸附电压为3.625V～3.750V之间,50μm×50μm面板的吸附电压为10.250V～10.375V之间,以及器件尺寸与吸附电压间的关系.     

Ni/4H-SiC SBD电离辐照探测器的实验研究

研制了Ni/4H-SiC肖特基二极管电离辐照探测器,并采用不同的辐照源进行了测试。实验结果表明,对于低能电子和γ射线辐照,该探测器都有比较灵敏的电流响应。经过1 Mrad(Si)的γ射线辐照后,探测器的信号电流没有明显退化;分别经过1 Mrad(Si)的γ射线和100 Mrad(Si)的1 MeV电子辐照后,0 V和-30 V辐照偏压下的探测器的暗电流仅有较轻微的退化。说明了该文研制的探测器具有暗电流低、灵敏度高和抗辐射容限高等优点,可以在强辐射环境中长时间应用。     

Structure and photoluminescence of mullite-Ge nanocomposite

Al12Si3.75Ge0.25O26 ceramic powder was prepared by sol-gel method using Al（NO3）3,Si（OC2H5）4 and Cl3GeCH2-CH2COOH as precursors.The structural formation of Al12Si3.75Ge0.25O26 ceramic powder was analyzed by XRD.After reduction by flowing H2/Ar mixture gas,strong room temperature photoluminescence （PL） can be observed at 565 nm,613 nm,682 nm,731 nm and 777 nm,respectively.The PL intensity scarcely depends on the reduction temperature and duration,while the sample reduced at 500 ℃ for A^3 hours has the highest PL intensity.Before and after reduction at 500 ℃,the volume of unit cell of mullite solid solution decreases to 0.4699 3.Based on the analysis of XPS and Raman spectra,it can be approved that the PL phenomenon at room temperature is caused by the embedded Ge nanoparticles with the average size of about 1.95 nm.     

十六烷基三甲基溴化胺介质中分光光度法测定微量锗(Ⅳ)

研究了在十六烷基三甲基溴化胺(CTMAB)溶液存在下,5-(对羧基苯偶氮)-8-羟基喹哪啶(5-CPAHQD)与微量锗(Ⅳ)发生显色反应的条件,建立了新的测定微量锗(Ⅳ)的高灵敏度分光光度法。实验结果表明,在硼酸钠-氢氧化钠介质中,5-(对羧基苯偶氮)-8-羟基喹哪啶与微量锗(Ⅳ)发生灵敏的显色反应,生成配合比为3∶1的橙红色配合物。配合物的最大吸收峰位于540nm,表观摩尔吸收系数为2.5×105 L·mol-1·cm-1,在10mL溶液中,微量锗(Ⅳ)质量在0.03~2.8μg之间符合比耳定律,检出限为0.1mg/L,并且该显色反应具有较强的抗干扰能力,可用于茶水中微量锗(Ⅳ)的测定,方法的回收率在103.2%~104.1%之间,测得其相对标准偏差(n=6)≤2.5%,结果与原子吸收光谱法相一致。     

硫化锌精矿中镓锗在高压氧浸中的浸出行为研究

试验研究了硫化锌精矿中镓、锗在高压氧浸中的浸出行为,考察确定了酸锌的量比,浸出时间,浸出液初始Fe(II)离子浓度,木质素添加量,矿石粒度,温度等因素对各元素浸出率的影响。结果表明,锗与锌的浸出行为较为一致;而镓与铁的浸出行为密切相关,使铁充分浸出并保持浸出液具有足够的酸度,防止高温下Fe(II)离子的氧化水解,是提高金属镓浸出率的关键。对富含镓、锗等稀散金属的硫化锌精矿,采用两段逆流流程浸出,既可保证镓、锗浸出率在80%以上,又能使得一段浸出后液酸度(H2SO4)<20 g/L,从而有利于其后续的中和。     

Reactive magnetron sputtering of germanium carbide films at different substrate temperature

To explore the relationship between the chemical bonding and mechanical properties for germanium carbide (Ge1-xCx) films,the Ge1-xCx films are prepared via reactive magnetron sputtering in a mixture of CH4/Ar discharge,and their composition,chemical bonding and hardness were investigated as a function of substrate temperature (Ts). The results show that Ts remarkably influences the chemical bonding of Ge1-xCx film,which results in a pronounced change in the film hardness. As Ts increases from ambient (60 ℃) to 500 ℃,the Ge content in the film gradually increases,which promotes forming sp3 C-Ge bonds in the film at the expense of sp2C-C bonds. Furthermore,it is found that with increasing Ts the fraction of C-H bonds in Ge1-xCx film gradually decreases,which is attributed to an enhancement in the desorption rate of C-Hn(n=1,2,3) species decomposed from methane. The transition from graphite-like sp2 C-C to diamond-like sp3C-Ge bonds as well as the reduction in C-H bonds in the film with increasing Ts promotes forming the compact three-dimensional network structure,which significantly enhances the hardness of the film from 5.8 to 10.1 GPa.     

P-doped germanium nanowires with Fano-broadening in Raman spectrum

The optimized growth conditions for high density germanium(Ge) nanowires and P-doped Ge nanowires on Si(111) substrate were investigated,the phosphorus(P)-doping in Ge nanowires was also characterized.Vapor liquid solid-low pressure chemical vapor deposition(VLS-LPCVD) of Ge nanowires was conducted with different thicknesses of Au film as catalyst,different flow rates of GeH_4 as precursor and PH_3/Ar as co-flow.The morphologies of the Ge nanowires were characterized by scanning electron microscopy(SEM),the P-doping was verified by micro Raman spectroscopy via measuring the P local vibrational peak(342-345 cm~(-1)) and asymmetric broadening of Ge-Ge vibrational peak(about 300 cm~(-1),respectively.The characterization results show that 1 run thickness of Au catalyst is the most suitable condition among thicknesses of 0.1,1,5,and 10 nm for the growth of high density Ge nanowires at 300 and 350℃,and 0.5 sccm is the best flow rate of PH_3/Ar to grow high density and large scale P-doped Ge nanowires among flow rates of 0.5,1 and 2sccm.The P impurity can be doped into Ge nanowires effectively during LPCVD process at 350 ℃.     

Improvement of Ge MOS Electrical and Interfacial Characteristics by using NdAlON as Interfacial Passivation Layer

The Ge metal-oxide-semiconductor (MOS) capacitors were fabricated with HfO_2 as gate dielectric.AlON,NdON,and NdAlON were deposited between the gate dielectric and the Ge substrate as the interfacial passivation layer (IPL).The electrical properties (such as capacitance-voltage (C-V) and gate leakage current density versus gate voltage (J_g-V_g)) were measured by HP4284A precision LCR meter and HP4156A semiconductor parameter analyzer.The chemical states and interfacial quality of the high-k/Ge interface were investigated by X-ray photoelectron spectroscopy (XPS).The experimental results show that the sample with the NdAlON as IPL exhibits the excellent interfacial and electrical properties.These should be attributed to an effective suppression of the Ge suboxide and HfGeOx interlayer,and an enhanced blocking role against inter-diffusion of the elements during annealing by the NdAlON IPL.     

Characterization of single-event multiple cell upsets in a custom SRAM in a 65 nm triple-well CMOS technology

In this paper, the characterization of single event multiple cell upsets(MCUs) in a custom SRAM is performed in a 65 nm triple-well CMOS technology, and O(linear energy transfer(LET) = 3.1 Me V cm2/mg), Ti(LET = 22.2 Me V cm2/mg) and Ge(LET = 37.4 Me V cm2/mg) particles are employed. The experimental results show that the percentage of MCU events in total upset events is 71.11%, 83.47% and 85.53% at O, Ti and Ge exposures. Moreover, due to the vertical well isolation layout, 100%(O), 100%(Ti) and 98.11%(Ge) MCU cluster just present at one or two adjacent columns, but there are still 4 cell upsets in one MCU cluster appearing on the same word wire. The characterization indicates that MCUs have become the main source of soft errors in SRAM, and even though combining the storage array interleaving distance(ID) scheme with the error detection and correction(EDAC) technique, the MCUs cannot be completely eliminated, new radiation hardened by design techniques still need to be further studied.     

热处理对埋入SiO2介质中的微晶Ge特性的影响

采用射频共油射方法将微晶锗纳米颗粒埋入ＳｉＯ２介质中,然后在不同温度的氮气氛中进行热处理。用拉曼光谱、变温电导特性测试等实验分析手段进行特性研究。结果表明,埋入ＳｉＯ２介质中的微晶锗的平均胡热处理的条件变化而变化,复合薄膜的光致发光的强度电导率与微晶锗的平均尺寸有关。当微晶锗的平均尺寸约３ｎｍ时,复合薄膜的电导率最大,光致发光的强度在２．１７５ｅｖ和２．２４６ｅｖ峰位处得到加强。     

Si添加物对Li掺杂的Mg2(Ge,Sn)热电性能的影响

Mg₂(Ge, Sn)固溶体是一种环境友好型的中温(500~800 K)热电材料。目前n型Mg₂(Ge, Sn)热电材料的ZT值已经高达1.4,但p型Mg₂(Ge, Sn)的ZT值仅为0.5。本文在p型Mg_1.92Li_0.08Ge_0.4Sn_0.6中添加了少量Si元素以在材料中形成富Si相,利用其与基体的界面过滤低能载流子、降低热导率。采用两步固相反应、球磨和热压的方法制备Mg_1.92Li_0.08Ge_0.4Sn_0.6-xSi_x (x=0, 0.025, 0.05, 0.075, 0.1)样品,通过测试样品的热电输运参数,分析Si添加物对样品热电输运和性能的影响。结果表明:Si添加物能显著提高基体的功率因子,同时有效降低晶格热导率和电子热导率;最终,Mg_1.92Li_0.08Ge_0.4Sn_0.525Si_0.075的ZT最大值在723 K达到0.75。     

[NH_3CH_2CH(NH_3)CH_3]_2·[Ge_9O_(18)(OH)_4]·H_2O的溶剂热法合成与结构分析

用溶剂热法合成出一个新的开放骨架锗酸盐[NH3CH2CH(NH3)CH3]2.[Ge9O18(OH)4].H2O,并通过FTIR和元素分析对其进行了表征。单晶X-射线衍射结果表明,该化合物的8-MR、10-MR交叉孔道的三维骨架是由Ge9O22团簇构成的;质子化的有机铵分子被包围在孔道中,并且通过氢键与骨架相连;水分子处在2个沿着b轴的相邻Ge9O22团簇之间,并且被4个沿着[101]和[10-1]方向的质子化的1,2-丙二胺包围。