激光辐照制备高介电常数Ta2O5陶瓷

采用大功率CO2激光辐照制备高介电常数Ta2O5陶瓷,讨论了激光制备工艺参数如激光光束模式、功率密度、扫描速率、辐照时间、辐照方式等对制备材料介电性能和组织形貌的影响,分析了其作用机理.     

飞秒激光诱导玻璃内Ba2TiSi2O8晶体的析出

使用聚焦后的800nm,150fs,250kHz的高重复频率飞秒脉冲激光器能够在BaO-TiO₂-SiO₂组分的玻璃内部三维选择性地诱导Ba₂TiSi₂O₈晶体的析出. 发光光谱显示这种晶体把入射的800nm光转化成了400nm的蓝光,因此这种析出的晶体具有非线性倍频特性. 通过拉曼光谱测定,在当前的玻璃组分中析出的晶体是Ba₂TiSi₂O₈. 研究表明,经250kHz的飞秒激光辐照一段时间后,在玻璃内部由于脉冲能量的连续沉积会使得激光辐照区域出现热积累效应,因此,该辐照区域的温度会不断升高以致超过玻璃析晶温度,最终诱导玻璃熔融析晶. 此外,对飞秒激光辐照区域不同部位进行拉曼光谱检测,结果表明：在整个区域Ba₂TiSi₂O₈晶体的析出呈现中间比外围明显的分布特点,因此晶体析出与辐照形成的温度梯度场有密切关系.     

激光作用下GeS2非晶半导体薄膜的性能及结构变化

采用514.5nm波长的氩离子激光器，结合X射线衍射分析（XRD）、红外光谱分析（IR）、扫描电镜分析（SEM）和透射光谱分析，研究了GeS2非晶半导体薄膜在激光辐照后的性能及结构变化。实验结果发现，经热处理和激光辐照后，薄膜的光学吸收边均移向短波长处，并且随着辐照激光强度和辐照时间的增加而增加，这种平移在退火薄膜中是可逆的。SEM结果分析表明，薄膜在激光辐照后有晶相出现，且随着辐照激光强度的增加，晶相更多。     

一种反射型有机/无机复合高能激光防护涂层制备及性能研究

以酚醛树脂、环氧树脂为粘结剂，采用单一因素考察法，分别考察了ZrO₂和Al₂O₃共2种具有高反射率的耐热填料对高能激光防护涂层性能的影响，分别对其抗高能激光烧蚀性能、耐激光辐照时间、激光辐照前后涂层表面反射率等性能进行了表征，开展了辐照前后涂层表观形貌观察及XRD扫描，从微观角度确定了耐热填料晶型变化情况。结果表明，ZrO₂在高能激光辐照过程中具有良好的耐高能激光烧蚀性能，可耐受高能激光辐照功率密度达到2.35 kW/cm2，激光辐照前后涂层表面反射率提高了46.28%。      

Nd:Y3Sc1.5Al3.5O12透明陶瓷的光谱性能以及激光输出

采用燃烧法制备了Nd:YSAG粉体, 经过成型、素烧, 最终在氢气气氛中烧结制备了Nd:YSAG透明陶瓷. 测试结果表明, Nd:YSAG透明陶瓷具有荧光谱线较宽, 荧光寿命较长的特点. 激光实验得到的激光输出, 斜率效率为23.6%, 输出功率为0.36W, 输出激光的谱线分布较宽.     

基于外加热激励源的中红外激光辐照VO2薄膜温升研究

VO_2薄膜在中红外激光防护领域有着重要意义。为研究中红外激光辐照VO_2薄膜的温升累积效应及克服中红外激光器功率过小的困难,设计了一种外加热激励源的实验方法。首先利用ANSYS软件对中红外纳秒脉冲激光在不同激励源温度和不同功率密度下辐照VO_2薄膜的温升累积进行仿真,并做了实际验证。研究发现,随着外加激励温度的升高,可在一定时间(100s)内达到VO_2相变温度的激光功率密度逐渐减小,通过增加功率密度,也可以进一步降低相变所需的激励源温度。两者均提高了VO_2薄膜的温升速率。然后在激励源温度为40℃、中红外激光功率密度为1 W/mm~2的条件下研究了中红外纳秒脉冲激光参数对VO_2薄膜的温升累积效应,结果表明,增加激光脉宽、增加重频或光斑半径均能有效增加VO_2薄膜的温升速率。     

脉冲激光沉积ZrW2O8薄膜的制备和性能

采用脉冲激光沉积法在石英基片上沉积制备了ZrW2O8薄膜.用X射线衍射仪(XRD)、原子力显微镜(AFM)研究了不同衬底温度对薄膜结构组分、表面粗糙度和形貌的影响,用台阶仪和分光光度计测量薄膜的厚度和不同衬底温度下制备薄膜的透射曲线,用变温XRD分析了ZrW2O8薄膜的负热膨胀特性.实验结果表明:在衬底温度为室温、550℃和650℃下脉冲激光沉积的ZrW2O8薄膜均为非晶态,非晶膜在1200℃保温3min后淬火得到立方相ZrW2O8薄膜;随着衬底温度的升高,ZrW2O8薄膜的表面粗糙度明显降低;透光率均约为80%,在20～600℃温度区间内,脉冲激光沉积制备的ZrW2O8薄膜的负热膨胀系数为-11.378×10-6 K-1.     

典型低轨辐照环境对MoS2-Ti薄膜真空摩擦学性能的影响

采用非平衡磁控溅射方法在9Cr18基底上制备了MoS₂-Ti薄膜，并对4组样品分别进行了电子辐照、电子/质子辐照、电子/质子/紫外辐照、电子/质子/紫外/原子氧辐照。采用SEM、XRD、XPS分析了辐照前后薄膜的结构和化学组成变化，通过摩擦试验考察了辐照前后薄膜的摩擦学性能，探讨了其损伤机制。研究结果表明，电子辐照、质子辐照、紫外辐照对MoS₂-Ti薄膜的显微组织结构、表面形貌及摩擦学性能没有明显影响。动能5 eV的原子氧对MoS₂-Ti薄膜表面有显著的损伤，主要表现在表面出现“绒毯”状形态，Mo、S和Ti元素被氧化成高价氧化物。原子氧辐照导致MoS₂-Ti薄膜摩擦起始和中段摩擦因数升高、中段摩擦因数不稳定，比磨损率增大。     

纳秒激光辐照对类金刚石薄膜的损伤及改性

利用Nd:YAG纳秒激光(波长分别为355、532和1 064 nm)辐照由电子束蒸发技术制备的类金刚石(DLC)薄膜,通过光学显微镜、光学轮廓仪和拉曼光谱仪等分析了辐照后的薄膜样品,结果表明:不同波长的单脉冲激光辐照时,DLC膜的激光损伤阈值不同;同一波长的多脉冲激光辐照时,损伤阈值低于单脉冲辐照阈值;脉冲激光辐照对DLC膜具有改性作用,受辐照薄膜区域表层发生了石墨化、剥落和气化效应,致使DLC膜表面出现了隆起和弹坑,隆起高度和弹坑深度与激光能量密度大小和脉冲个数有关.     

Pr2/3Sr1/3MnO3薄膜外场诱导自旋输运特性

采用脉冲激光沉积法制备了稀土掺杂钙钛矿锰氧化物Pr2/3Sr1/3MnO3(PSMO)外延薄膜,研究了薄膜在磁场、激光和电流作用下的自旋输运特性.在低温铁磁金属相,激光作用使薄膜的电阻增大,而磁场和电流则诱导电阻减小;在高温顺磁绝缘态,外场诱导均使电阻减小.在铁磁金属相,外场诱导输运特性的变化可归结于外场对体系电子自旋系统的影响:磁场和电流加强材料中eg电子和t2g局域电子间的自旋平行,增强了双交换作用;激光作用可产生光致退磁效应,减弱双交换作用.在顺磁绝缘态,场致电阻降低源于外场致使小极化子的退局域化效应.     

Magnetic coupling in La0.67Ca0.33MnO3/La0.67Sr0.33CoO3/La0.67Ca0.33MnO3 sandwiches

La_0.67Ca_0.33MnO₃ (LCMO)/La_0.67Sr_0.33CoO₃ (LSCO)/LCMO trilayer films are fabricated on single-crystal substrates NdGaO₃ (110) and the interlayer coupling are investigated. Compared with LCMO single layer, sandwiches showed the enhanced metal-insulator transition temperature of LCMO layers. The magnetoresistance is dependent on spacer thickness and the peak value dramatically decreases when LSCO layer is thick enough because of shorting by the LSCO layer. The magnetic coercivity H_C shows a nonmonotonic behavior with changing spacer layer thickness and the waist-like hysteresis indicates that there is an indirect exchange coupling between the top and bottom LCMO layers across the spacer layer.     

Varistor properties of ZnO-Pr6O11-CoO-Cr2O3-Y2O3-In2O3 ceramics

The varistor properties of the ZnO-Pr₆O₁₁-CoO-Cr₂O₃-Y₂O₃-In₂O₃ ceramics were investigated for different concentrations of In₂O₃. The increase of In₂O₃ concentration slightly increased the sintered density (5.60-5.63 g/cm³) and slightly decreased the average grain size (3.4-2.9 μm). The breakdown field increased from 6023 to 14822 V/cm with increasing concentration of In₂O₃. The nonlinear coefficient increased from 17.6 to 44.6 for up to 0.005 mol%, whereas the further doping caused it to decrease to 36.8. In₂O₃ acted as an acceptor due to the donor concentration, which decreases in the range of 1.02 × 10¹⁷ to 0.24 × 10¹⁷/cm³ with increasing concentration of In₂O₃.     

Nanocrystallization of SrBi2Nb2O9 from glasses in the system Li2B4O7---SrO---Bi2O3---Nb2O5

Transparent glasses in the system (100−x)Li₂B₄O₇–x(SrO---Bi₂O₃---Nb₂O₅) (10≤x≤60) (in molar ratio) were fabricated by a conventional melt-quenching technique. Amorphous and glassy characteristics of the as-quenched samples were established via X-ray powder diffraction (XRD) and differential thermal analyses (DTA) respectively. Glass–ceramics embedded with strontium bismuth niobate, SrBi₂Nb₂O₉ (SBN) nanocrystals were produced by heat-treating the as-quenched glasses at temperatures higher than 500 °C. Perovskite SBN phase formation through an intermediate fluorite phase in the glass matrix was confirmed by XRD and transmission electron microscopy (TEM). Infrared and Raman spectroscopic studies corroborate the observation of fluorite phase formation. The dielectric constant (_r) and the loss factor (D) for the lithium borate, Li₂B₄O₇ (LBO) glass comprising randomly oriented SBN nanocrystals were determined and compared with those predicted based on the various dielectric mixture rule formalism. The dielectric constant was found to increase with increasing SBN content in LBO glass matrix.     

PbSbBiS4-Sb2S3 and PbSbBiS4-Bi2S3 joins in the PbS-Sb2S3-Bi2S3 system

Phase equilibria along the PbSbBiS₄-Sb₂S₃ and PbSbBiS₄-Bi₂S₃ joins of the PbS-Sb₂S₃-Bi₂S₃ system have been studied for the first time using differential thermal analysis, X-ray diffraction, microstructural analysis, microhardness tests, and density measurements, and the phase diagrams of the joins have been mapped out. The joins are shown to be pseudobinary with limited series of terminal solid solutions. The solid solutions are p-type semiconductors.     

Syntheses of hollandite type Rb2Cr8O16, K2Cr2V6O16 and K2V8O16

Hollandite-type compounds, Rb₂Cr₈O₁₆, K₂Cr₂V₆O₁₆ and K₂V₈O₁₆, were synthesized under high P-T conditions up to 1200°C and 7GPa. The structural refinement using a single crystal of Rb₂Cr₈O₁₆ confirms that the structure is similar to that of K₂Cr₈O₁₆. Magnetic measurements indicate that Rb₂Cr₈O₁₆ is ferromagnetic below 295K, K₂Cr₂V₆O₁₆ paramagnetic down to 77K and K₂V₈O₁₆ has susceptibility anomaly at 175K. These compounds are all semiconductive and show discontinuities in temperature-resistivity curves at points corresponding to magnetic anomalies.     

Microstructures of YBa2Cu3O7/La0.7Ca0.3MnO3 and La0.7Ca0.3MnO3/YBa2Cu3O7 bi-layers grown on (001)LaAlO3

Epitaxial YBa₂Cu₃O₇/La_0.7Ca_0.3MnO₃ (YBCO/LCMO) bi-layers and La_0.7Ca_0.3MnO₃/YBa₂Cu₃O₇ (LCMO/YBCO) bi-layers were grown on (001)LaAlO₃ by pulsed laser deposition, and their microstructures were compared by transmission electron microscopy investigation. In the YBCO(100 nm)/LCMO(150 nm) bi-layers, the LCMO layer consists of columnar grains of ~ 17 nm in diameter and contains mixed orientation domains of [100]_c, [010]_c and [001]_c. The YBCO layer is totally c-axis oriented and the YBCO lattices are tilted − 2.5° to + 2.5° as they grew on the rough surfaces of LCMO columnar grains. For the LCMO(140 nm)/YBCO(140 nm) bi-layers, the LCMO/YBCO interface is sharp and flat. The initial 12-nm thickness of the YBCO layer is composed of c-axis oriented domains, and the upper part of YBCO layer is [100] oriented. The LCMO layer was predominantly [001]_c oriented while [100]_c-oriented domains were occasionally observed.     

Characterization of YBa2Cu3O7/PrBa2Cu3O7 superlattices

We investigated the structural and superconducting properties ofc-axis oriented (YBa₂Cu₃O₇) _nY /(PrBa₂Cu₃O₇) _npr superlattices with thicknesses of the individual layers down to one unit cell (10nY1; 18>nPr 1). By transmission electron microscopy and X-ray diffraction we find an excellent structural quality of the samples, though the quantitative analysis shows the existence of defects. In superlattices with decoupled YBa₂Cu₃O₇ layers of two unit cell thickness we find a highT _c value of 75 K. We probed the flux line structure in the superlattices by measurements of the critical current density in magnetic fields. The experiments show that the flux-line dynamics is dominated by the movement of pancake vortices.     

Vapour-liquid equilibria in the ternary mixtures N2---CH4---C2H6 and N2---C2H6---C3H8

A systematic study was performed with mixtures consisting of N₂, CH₄, C₂H₆ and C₃H₈, to investigate experimentally phase equilibria and caloric properties and to test the accuracy of thermodynamic correlations. The first part of this Paper reports results of T---p---x---y measurements on ternary systems in the range 20 < p < 120 bar and 140 < T < 220 K. The results are compared with data calculated by generalized equations of state.     

Structural study of Sr0.3Ba0.7Nb2O6 and La0.030Sr0.255Ba0.700Nb2O6 ceramic systems

Sr_0.3Ba_0.7Nb₂O₆ (SBN) and La_0.030Sr_0.255Ba_0.700Nb₂O₆ (LSBN) ceramic compounds have been prepared using the traditional ceramic method at two different calcination temperatures (900 and 1000 °C) and later sintered both at 1400 °C. A study of the effects of the calcination temperatures and La substitution on the morphological, compositional, and structural properties of SBN and LSBN is presented using scanning electronic microscopy (SEM), energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD) analysis. From Rietveld refinement processes, the XRD patterns were interpreted to evaluate such effects in the structural parameters and the site occupation factors of the heavy metals and oxygen atoms. The effect of the incorporation of La resulted in a 0.25% cell contraction and turned out to be higher than the 0.08% dilation effect produced by the increase of calcination temperature. The La ion with similar effective ionic radius and higher electronegativity is incorporated into the structure occupying the A₁ site just like the Sr ions in the SBN compound. Differences in the site occupation factors between the SBN and LSBN samples lead to substantial changes in the physical properties such as temperature of relative dielectric constant maximum, relative dielectric constant, and dielectric loss, correlated with the distortion and the relative orientation of the oxygen octahedra.     

The effect of Bi1.5Zn0.5Nb0.5Ti1.5O7 cover layer on the dielectric and tunable properties of Ba0.6Sr0.4TiO3/Bi1.5Zn0.5Nb0.5Ti1.5O7 bilayered thin films

Bi_1.5Zn_0.5Nb_0.5Ti_1.5O₇ (BZNT) thin films with different thicknesses as cover layers were deposited on the Ba_0.6Sr_0.4TiO₃ (BST) thin films on the Pt/Ti/SiO₂/Si substrates by radio frequency magnetron sputtering method. The microstructure, surface morphology, dielectric and tunable properties of BST/BZNT heterogeneous bilayered films were investigated as a function of the thickness of BZNT films and the effect of BZNT films on the asymmetric electrical properties of BST/BZNT bilayered films was discussed. It was found that BZNT cover layer significantly improved the leakage current and the dielectric loss, and the dielectric constant and tunability of BST/BZNT bilayered thin films simultaneously decreased with the increasing thickness of BZNT films. The BST/BZNT bilayered thin film with a 50 nm BZNT cover layer gave the largest figure of merit (FOM) of 33.48 with the upper tunability of 55.38%. The asymmetric electrical behavior of BST/BZNT bilayered films is probably related to an internal electric field caused by built-in voltages at Pt/BST and BZNT/Au interfaces.