Hydrothermal synthesis and characterization of (Bi,K)TiO3 ferroelectrics

A lead-free ferroelectric (Bi,K)TiO₃ (BKT) was synthesized by a hydrothermal process and characterized systematically at various temperatures. Well-crystallized BKT in the tetragonal phase was identified at a hydrothermal temperature over 220 °C. Small cubic particles were observed, regardless of hydrothermal temperature. The BKT sintered at 1050 °C was observed to be a typical relaxor behavior and very stable against frequency and temperatures, respectively. The sintered-BKT ceramics exhibited a high temperature of maximum dielectric permittivity (T_max = 356 °C at 10⁶ Hz) with piezoelectric constant (d₃₃ = 65 pC/N) and electromechanical coupling factors (k_p = 0.22, k_t = 0.43). Thus, the sintered-BKT showed excellent temperature stability with a high-T_max and piezoelectric properties.     

Growth and electrical performance of Pb(Mg1/3Nb2/3)O3-PbTiO3-Pb(Fe1/2Nb1/2)O3 single crystals

For the first time, we have grown ferroelectric single crystals Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃-Pb(Fe_1/2Nb_1/2)O₃ (PMN-PT-PFN) from the melt by the simple slow cooling process. The chemical composition of the single crystals PMN-PT-PFN (0.59/0.31/0.10) is near the morphotropic phase boundary (MPB). X-ray diffraction (XRD) was used to study phase structure of the as-grown crystals, energy dispersive X-ray spectrometer (EDS) and electron probe micro-analyzer (EPMA) were employed to confirm the chemical composition and element distribution of the as-grown crystals, respectively. The ferroelectric, dielectric and piezoelectric properties of the as-grown PMN-PT-PFN (0.59/0.31/0.10) single crystal oriented along the (0 0 1) axis were measured, which showed that the remnant polarization (P_r), coercive electric fields (E_c), the Curie temperature (T_c) and the piezoelectric coefficient (d₃₃) were 50.2 μC/cm², 13.9 kV/cm, 158 °C and about 1800 pC/N, respectively. All the results indicated that the PMN-PT-PFN (0.59/0.31/0.10) single crystals are promising for applying to field of high frequency.     

Tantalum influence on physical properties of (K0.5Na0.5)(Nb1−xTax)O3 ceramics

Lead-free (K_0.5Na_0.5)(Nb_1−xTa_x)O₃ ceramics with x = 0.00-0.30 were prepared by the solid-state reaction technique. The effects of Ta on microstructure, crystallographic structure, phase transition and piezoelectric properties have been investigated. It has been shown that the substitution of Ta decreases Curie temperature T_C and orthorhombic-tetragonal phase transition temperature T_O-T, while increasing the rhombohedral-orthorhombic phase transition temperature T_R-O. In addition, piezoelectric activity is enhanced with the increase of Ta content. The ceramics with x = 0.30 have the high value of piezoelectric coefficient d₃₃ = 205 pC/N. Moreover, k_p shows little temperature dependence between −75° C and 75 °C, and d₃₃ exhibits very good thermal stability over the range from −196 °C to 75 °C in the aging test.     

Effects of Ti on dielectric and piezoelectric properties of (Pb0.985La0.01)1+y(Nb1−yTiy)2O6 ceramics

Piezoelectric ceramics (Pb_0.985La_0.01)_1+y(Nb_1−yTi_y)₂O₆ (0 ? y ? 0.1) (PLNT) were fabricated by a conventional solid-state reaction method. The crystal structure and microstructures of specimens were investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM). All PLNT ceramics sintered at temperatures from 1250 °C to 1290 °C are shown to be a single orthorhombic phase. The formation of orthorhombic phase is promoted by excess PbO existed in the Ti-bearing samples during calcination processing. The increasing of the tolerance factor due to substitution of Ti⁴⁺ for Nb⁵⁺ is also responsible for the stability of orthorhombic phase. The high density of ceramics (relative density >95%) with the equiaxed grains and a minor porosity have been obtained. The measurement of dielectric and piezoelectric properties of PLNT ceramics reveals that Ti reduces the dielectric loss (tan δ) and dielectric constant (ε_r) of PLNT ceramics, and enhances the piezoelectric constant (d₃₃) and Curie temperature (T_c). The optimum component with y = 0.075 possesses the excellent electrical properties: ε_r = 182, tan δ = 0.0018, d₃₃ = 84 pC/N and T_c = 564 °C.     

Morphotropic phase boundary in high temperature ferroelectric xBi(Zn1/2Ti1/2)O3 − yPbZrO3 − zPbTiO3 perovskite ternary solid solution

A bismuth and lead oxide based perovskite ternary solid solution xBi(Zn_1/2Ti_1/2)O₃ − yPbZrO₃ − zPbTiO₃ (xBZT − yPZ − zPT) was investigated as an attempt to develop a high T_C ferroelectric material for piezoelectric sensor and actuator applications. A morphotropic phase boundary (MPB) between rhombohedral and tetragonal phases was determined through an XRD study on a pseudobinary line 0.1BZT − 0.9[xPT − (1 − x)PZ] for composition 0.1Bi(Zn_1/2Ti_1/2)O₃ − 0.5PbZrO₃ − 0.4PbTiO₃. Enhanced piezoelectric and ferroelectric activities were observed for MPB composition with dielectric constant ε_r′ ~ 23,000 at Curie temperature (T_C) ≈ 320 °C, remanent polarization (P_r) = 35 μC/cm², piezoelectric coefficient (d₃₃) = 300 pC/N, unipolar strain = 0.15%, and electromechanical coupling coefficient (k_P) = 0.45.     

High piezoelectric d33 coefficient of lead-free (Ba0.93Ca0.07)(Ti0.95Zr0.05)O3 ceramics sintered at optimal temperature

Lead-free (Ba_0.93Ca_0.07)(Ti_0.95Zr_0.05)O₃ (BCZT) ceramics were prepared using a solid-state reaction technique. The structure and electrical properties were investigated with a special emphasis on the influence of sintering temperature. Crystalline structures and microstructures were analyzed by X-ray diffraction and scanning electron microscope (SEM) at room temperature. The BCZT ceramics sintered at 1450 °C show the highest densification and exhibit excellent piezoelectric properties of high piezoelectric coefficient d₃₃ = 387 pC/N, planar mode electromechanical coupling coefficient k_p = 44.2%, mechanical quality factor Q_m = 140 and Curie temperature T_c = 108 °C.     

Effects of BiAlO3 on structure and electrical properties of K0.5Na0.5NbO3-LiSbO3 lead-free piezoceramics

(1−x)(0.948 K_0.5Na_0.5NbO₃-0.052LiSbO₃)-xBiAlO₃ (KNNLS-xBA) lead-free piezoceramics were synthesized by conventional solid state reaction method. The compositional dependence of phase structure and electrical properties of the ceramics was systemically studied. XRD patterns revealed that all the ceramic samples possessed pure perovskite structure. In addition, polymorphic phase transition (PPT) for the ceramics with BA doping could not be observed in the measuring range from room temperature to 500 °C. Within the studied range of BA addition, the ceramics with x = 0.002 represented a relatively desirable balance between the degradation of the piezoelectric properties, improvement in temperature stability and mechanical quality factor. It was found that the KNNLS-0.002BA ceramics exhibited optimum overall properties (d₃₃ = 233 pC/N, k_p = 35%, tanδ = 0.047, P_r = 27.3 μC/cm², Q_m = 56 and T_c = 349 °C), suggesting that this material should be a promising lead-free piezoelectric candidate for piezoelectric applications.     

Bismuth-modified BiScO3-PbTiO3 piezoelectric ceramics with high Curie temperature

New piezoelectric ceramics, 0.15BiScO₃-0.85(Pb_{1 − 3x / 2}Bi_x)(Ti_0.98Mn_0.02)O₃ (x = 0.04~0.10), were prepared by using conventional solid phase processing. The results of X-ray diffraction (XRD) show that the ceramics have a single phase tetragonal perovskite structure. The ceramics, poled by normal poling process, have piezoelectric coefficient d₃₃, planar electromechanical coupling factor kp and thickness electromechanical coupling factor k_t of 50~60 pC/N, ~ 11% and ~ 30%, respectively. An extremely high mechanical quality factor Q_m of 1540 was obtained at the composition x = 0.08. The Curie temperature (T_C) is in the range of 520-550 °C, higher than 490 °C of pure PbTiO₃. The combination of good piezoelectric properties and high T_C makes these ceramics suitable for elevated temperature piezoelectric devices.     

Effect of Pb(Fe1/2Nb1/2)O3 modification on dielectric and piezoelectric properties of Pb(Mg1/3Nb2/3)O3-PbZr0.52Ti0.48O3 ceramics

10 mol% Pb(Fe_1/2Nb_1/2)O₃ (PFN) modified Pb(Mg_1/3Nb_2/3)O₃-PbZr_0.52Ti_0.48O₃ (PMN-PZT) relaxor ferroelectric ceramics with compositions of (0.9 − x)PMN-0.1PFN-xPZT (x = 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8 and 0.9) were prepared. X-ray diffraction investigations indicated that as-prepared ceramics were of pure perovskite phase and the sample with composition of x = 0.8 was close to morphotropic phase boundary (MPB) between rhombohedral and tetragonal phase. Dielectric properties of the as-prepared ceramics were measured, and the Curie temperature (T_c) increased sharply with increasing PZT content and could be higher than 300 °C around morphotropic phase boundary (MPB) area. At 1 kHz, the sample with composition of x = 0.1 had the largest room temperature dielectric constant ?_r = 3519 and maximum dielectric constant ?_m = 20,475 at T_m, while the sample with composition of x = 0.3 possessed the maximum dielectric relaxor factor of γ = 1.94. The largest d₃₃ = 318 pC/N could be obtained from as-prepared ceramics at x = 0.9. The maximum remnant polarization (P_r = 28.3 μC/cm²) was obtained from as-prepared ceramics at x = 0.4.     

Electric-field-induced strain and piezoelectric properties of a high Curie temperature Pb(In1/2Nb1/2)O3-PbTiO3 single crystal

The temperature dependence of dielectric and piezoelectric properties, electric-field-induced strains of 0.66 Pb(In_1/2Nb_1/2)O₃-0.34 PbTiO₃ single crystals, which were grown directly from melt by using the modified Bridgman technique with the allomeric Pb(Mg_2/3Nb_1/3)O₃-PbTiO₃ seed crystals, were determined as a function of crystallographic orientation with respect to the prototypic (cubic) axes. Ultrahigh piezoelectric response (d₃₃∼2000 pC/N, k₃₃∼94%) and strain levels up to 0.8%, comparable to rhombohedral (1−x)Pb(Mg_2/3Nb_1/3)O₃-xPbTiO₃ and (1−x)Pb(Zn_2/3Nb_1/3)O₃-xPbTiO₃ single crystals, were observed for the 〈0 0 1〉-oriented crystals. Strain levels up to 0.47% and piezoelectric constant d₃₃∼1600 pC/N could be achieved being related to an electric-field-induced rhombohedral-orthorhombic phase transition for the 〈1 1 0〉-oriented crystals. In addition, high electromechanical coefficients k₃₃ (∼88%) can be achieved even heating to 110 °C. High T_C (∼200 °C), large electromechanical coefficients k₃₃ (∼94%) and low dielectric loss factor (∼1%), along with large strain make the crystals promising candidates for a wide range of electromechanical transducers.     

Enhancement on effective piezoelectric coefficient d33 of Bi3.15Dy0.85Ti3O12 ferroelectric thin films

Effects of annealing temperature (600-800 °C) on microstructure, ferroelectric and piezoelectric properties of Bi_3.15Dy_0.85Ti₃O₁₂ (BDT) thin films prepared by metal-organic decomposition were studied. The remnant polarization 2P_r and spontaneous polarization 2P_s (16.2 µC/cm² and 23.3 µC/cm² under 690 kV/cm), effective piezoelectric coefficient d₃₃ (63 pm/V under the bipolar driving field of 310 kV/cm) of BDT thin film annealed at 700 °C are better than those of others. The higher 2P_s and relatively permittivity ε_r induced by moderate annealing temperature should be responsible for the enhancement of piezoelectric properties. The improved d₃₃ may make BDT a promising candidate for piezoelectric thin film devices.     

Study on properties of CaO-SiO2-B2O3 system glass-ceramic

Low temperature co-fired ceramic (LTCC) is prepared by sintering a glass selected from CaO-SiO₂-B₂O₃ system, and its sintered bodies are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). It is found that the optimal sintering temperature for this glass-ceramic is 820 °C for 15 min, and the major phases of this material are CaSiO₃, CaB₂O₄ and SiO₂. The glass-ceramic possesses excellent dielectric properties: ?_r = 6.5, tan δ < 2 × 10⁻³ at 10 MHz, temperature coefficient of dielectric constant about −51 × 10⁻⁶ °C⁻¹ and coefficient of thermal expansion about 8 × 10⁻⁶ °C⁻¹ at 20-400 °C. Thus, this material is supposed to be suitable for the tape casting process and be compatible with Ag electrode, which could be used as the LTCC materials for the application in wireless communications.     

Structure and ferroelectric properties in (K0.5Bi0.5)TiO3-BiScO3-PbTiO3 piezoelectric ceramic system

(K_0.5Bi_0.5)TiO₃-BiScO₃-PbTiO₃ ceramics were synthesized by conventional solid-state method. A morphotropic phase boundary (MPB) was confirmed with the aid of structural analysis. Two dielectric anomalous peaks were observed, the one around dielectric maximum temperature (T_m) due to phase transformation from ferroelectric to paraelectric while the second one could be ascribed to space charges. Furthermore, the existence of space charges also resulted in the independence of T_m with frequency at low lead composition. A new high temperature piezoelectric ceramic, 0.30(K_0.5Bi_0.5)TiO₃-0.30BiScO₃-0.40PbTiO₃ close to MPB exhibited excellent electrical properties with T_m of 384 °C, d₃₃ of 247 pC/N, k_p of 38.9%, P_r of 19.41 μC/cm², and E_c of 2.25 kV/mm, indicative of a candidate for high temperature application.     

Enhancement on effective piezoelectric coefficient of Bi3.25Eu0.75Ti3O12 ferroelectric thin films under moderate annealing temperature

Bi_3.25Eu_0.75Ti₃O₁₂ (BET) thin films were deposited on Pt/Ti/SiO₂/Si(111) substrates by a metal-organic decomposition method. The effects of annealing temperatures 600-800 °C on microstructure, ferroelectric, dielectric and piezoelectric properties of BET thin films were studied in detail. The spontaneous polarization (87.4 × 10^− 6 C/cm² under 300 kV/cm), remnant polarization (65.7 × 10^− 6 C/cm² under 300 kV/cm), the dielectric constant (992.9 at 100 kHz) and the effective piezoelectric coefficient d₃₃ (67.3 pm/V under 260 kV/cm) of BET thin film annealed at 700 °C are better than those of the others. The mechanisms concerning the dependence of the enhancement d₃₃ are discussed according to the phenomenological equation, and the improved piezoelectric performance could make the BET thin film a promising candidate for piezoelectric thin film devices.     

Effects of Fe2O3 doping on the microstructure and piezoelectric properties of 0.55Pb(Ni1/3Nb2/3)O3-0.45Pb(Zr0.3Ti0.7)O3 ceramics

0.55Pb(Ni_1/3Nb_2/3)O₃-0.45Pb(Zr_0.3Ti_0.7)O₃(PNN-PZT) ceramics with different concentration of xFe₂O₃ doping (where x = 0.0, 0.8, 1.2, 1.6 mol%) were synthesized by the conventional solid state sintering technique. X-ray diffraction analysis reveals that all specimens are a pure perovskite phase without pyrochlore phase. The density and grain size of Fe-doped ceramics tend to increase slightly with increasing concentration of Fe₂O₃. Comparing with the undoped ceramics, the piezoelectric, ferroelectric and dielectric properties of the Fe-doped PNN-PZT specimens are significantly improved. Properties of the piezoelectric constant as high as d₃₃ ~ 956 pC/N, the electromechanical coupling factor k_p ~ 0.74, and the dielectric constant ε_r ~ 6095 are achieved for the specimen with 1.2 mol% Fe₂O₃ doping sintered at 1200 °C for 2 h.     

Low temperature sintering and properties of piezoelectric PZT-PFW-PMN ceramics with YMnO3 addition

Low temperature sintering of Pb(Zr,Ti)O₃-Pb(Fe_2/3W_1/3)O₃-Pb(Mn_1/3Nb_2/3)O₃ (PZT-PFW-PMN) quaternary piezoelectric ceramics were studied with the use of YMnO₃ as sintering aid. The sintering aid improved the sinterability of PZT-PFW-PMN ceramics due to the effect of YMnO₃ liquid phase. The effects of YMnO₃ contents and sintering temperature on the phase structure, density, dielectric and piezoelectric properties were investigated. The results show that the sintering temperature can be decreased and the electrical properties can be maintained by the YMnO₃ addition. The optimized properties were obtained by doping 0.30 wt.% YMnO₃ and sintering at 1020 °C, which are listed as follows: d₃₃ = 341 pC/N, K_p = 0.57, Q_m = 1393, tan δ = 0.0053, T_c = 304 °C, P_r = 17.13 μC/cm² and E_c = 11.15 kV/cm, which make this system be a promising material for multilayer piezoelectric actuator and transformer applications.     

Co2O3 doped (Na0.65K0.35)NbO3 piezoceramics

Lead-free (Na_0.65K_0.35)NbO₃ + x wt.% Co₂O₃ (KNN-xCo) piezoceramics were synthesized by conventional ceramic processing and the effects of low Co₂O₃ concentration on the microstructure and electrical properties were investigated. The experimental results show that the orthorhombic-tetragonal phase transition temperature (T_O-T) decreases slightly whereas the tetragonal-cubic phase transition temperature (T_C) and crystal structure keep unchanged with the increasing of Co₂O₃ content. The doping of Co₂O₃ facilitates the grain growth and improves the density and piezoelectric properties of the ceramics. The sample of x = 0.2 exhibits good piezoelectric properties of piezoelectric coefficient d₃₃ = 127pC/N and electromechanical coupling coefficient k_p = 35.1% with density of ρ = 4.31/cm³. These results strongly suggest that the composition of (Na_0.65K_0.35)NbO₃ is another promising lead-free candidate for investigation besides (Na_0.5K_0.5)NbO₃ system.     

Piezoelectric and dielectric properties of K0.5Na0.5NbO3-LiSbO3-BiScO3 lead-free piezoceramics

(1 − x) (0.95K_0.5Na_0.5NbO₃-0.05LiSbO₃)-xBiScO₃ lead-free piezoceramics have been fabricated by an ordinary pressure-less sintering process. The relationship between the BS content, phase structure, density, and piezoelectric properties and their temperature stability was discussed particularly. All compositions show a main perovskite structure, showing room-temperature symmetries of orthorhombic at x = 0, of tetragonal at 0.002 ≤ x ≤ 0.01. When 0.002 ≤ x ≤ 0.008, the ceramics have excellent electrical properties of d₃₃ = 265-305 pC/N, k_p = 45-54%, ?_r = 1346-1638, Curie temperature T_c = 315-370 °C and depolarizing temperature T_d = 315-365 °C, comparable to that of other KNN-based piezoceramics. The results indicate that the ceramics are promising lead-free piezoelectric materials.     

Electrical properties tailoring in Ni-particle-dispersed (Ba0.95Ca0.05)(Ti0.96Zr0.04)O3 composites

Ni-particle-dispersed (Ba_0.95Ca_0.05)(Ti_0.96Zr_0.04)O₃ (BCTZ/Ni) piezoceramic composites were prepared via sintering at 1300 °C in industrial N₂ gas. Structural characterizations showed that the metallic Ni was not oxidized and the BCTZ preserved the perovskite structure. The Ni particles were uniformly distributed in the BCTZ ceramic matrix. The relative dielectric constant ?_r of the BCTZ/Ni composites increased from 1362 to 3910 with increasing Ni content from 0 to 20 vol.%, which is explained by the Maxwell equation as well as the micro-capacitor model. The percolation theory of insulator–metal transitions is also applied to correlate the rapid increase of dielectric constant with Ni content. The piezoelectric constant d₃₃ gradually decreased from 230 to 50 pC N⁻¹, giving a gradient profile of piezoelectric property. We demonstrate that the electrical properties can be effectively tailored by dispersing metal particles into piezoceramics.     

Effects of Si-ion implantation on crystallization behavior of Ge2Sb2Te5 film

Crystallization and thermal stability of Ge₂Sb₂Te₅ (GST), the benchmark working material in phase-change non-volatile memory, were modified via Si-ion implantation. Through 5 × 10¹⁵ Si-ions/cm² ion-implantation, crystallization temperature increases from 165 °C to 177 °C. Furthermore, the activation energy of crystallization increases from 2.9 eV in the pristine film to 3.3 eV and 4.0 eV in films implanted with the doses of 5 × 10¹⁵ and 5 × 10¹⁶ Si-ions/cm², respectively. Temperatures corresponding to a 10-year failure-time increase from 83 °C in the pristine film to 96 °C and 107 °C in films implanted with 5 × 10¹⁵ and 5 × 10¹⁶ Si-ions/cm², respectively. Thermal stability of Si-ion implanted GST thus improves significantly. It was also found that grain growth is inhibited with higher implantation doses. In the case of the 5 × 10¹⁶ ion/cm² dose, the second-phase transition from face-centered cubic to hexagonal closed-packed structure of the GST is completely inhibited. However, crystallization time increases slightly due to Si-ion implantation.