串行级联LDPC码及其传输性能分析

提出了一种简化的LDPC译码算法,以减小译码算法的复杂度.以非规则LDPC码作为内码,串联一个高码率规则LDPC码作为外码,可降低或消除错误平层.将此串行级联LDPC码在M-QAM调制信道上进行了仿真分析,结果表明其性能优于RS码,可有效利用带宽,同时保证数据可靠传输.     

低密度校验码BP译码算法中量化问题的研究

本文对低密度校验(LDPC)码BP译码算法的量化问题(主要是接收比特信号和中间变量)进行了研究.着重讨论了量化范围、量化级数、均匀和非均匀量化等因素对译码性能的影响,给出了LDPC码BP译码算法的一些实用性的结论.并进一步发现在对BP译码算法的中间变量进行高阶量化处理时,在高信噪比的情况下,能明显地减小译码的误码率,降低译码算法的错误平层,提高译码性能.     

具有低编码复杂度准循环扩展LDPC码的构造方法

PEG(Progressive-Edge-Growth)算法是迄今为止构造性能优异的LDPC中短码的一种有效构造方法,然而直接采用该算法构造的LDPC码的编码复杂度正比于码长的平方,这是其实用化过程中的一个瓶颈。针对这一问题,提出一种具有低编码复杂度和低错误平层的准循环扩展LDPC码的构造方法。该算法在PEG算法基础上,先构造出近似下三角结构的半随机基矩阵,然后再对基矩阵进行扩展,该方法可以在不改变基矩阵的度分布比例情况下,有效消除短环。仿真结果表明,所提出的方法构造的LDPC码比原始的PEG算法构造的随机LDPC码具有更低的错误平层,而且编码复杂度更低,更易于硬件实现。     

一种QC LDPC码围长优化算法

提出一种算法,在构造QC LDPC码的移位因子的过程中,选择令平均围长最大的移位因子,从而改善迭代译码的性能。仿真结果表明,利用该算法构造的QC LDPC码具有良好的瀑布区和错误平层区性能。     

非规则LDPC码简化译码算法研究

主要介绍了低密度奇偶校验码(LDPC)的基本概念及规则和非规则两种典型的LDPC码的结构,简要介绍了LDPC码的译码算法,在此基础上,引出两种非规则LDPC码的简化译码算法,仿真验证算法较大地降低了译码复杂度,并在高信噪比下性能损失较小.     

低密度奇偶校验码码字构造的消环算法

低密度奇偶校验码(LDPC)的性能取决于多种因素,包括度分布对、码字的长度以及环的分布。环的存在会影响LDPC码的译码门限和误码平层,尤其是长度比较小的环对LDPC码的性能影响很大。因此,有必要在构造LDPC码时消去长度比较小的环。文中提供了一种有效的消环算法,降低了LDPC码的误码平层。     

一种新颖的低错误平层LDPC码构造方法

针对低密度奇偶校验(LDPC)码在高信噪比区域可能存在错误平层的缺点,提出了一种低错误平层LDPC码的新构造方法。该方法的基本矩阵由渐进边增长(PEG)算法与近似环额外信息度(ACE)算法相结合,目的是提升基本矩阵中环的连通性;然后将基于分割移位(PS)的循环移位系数矩阵对基本矩阵循环扩展,以此构造出校验矩阵。该方法除了能够改善高信噪比区域的错误平层,还具有码长、码率的任意可设性特点。仿真结果表明,PAP-LDPC(3 600,2 700)码在信噪比为4 dB以后并未出现明显的错误平层。     

一种优化LDPC码环分布的改进算法

在下一代移动通信系统中,为了满足移动用户对高速、宽带数据传输业务不断增长和更高质量的要求,需要对现有物理层的关键技术作进一步的改进、完善和实用化,例如在信道编码方面,就采用了革命性的LDPC码。而PEG算法则是目前构造中短码长LDPC码最有效的算法之一。通过借鉴ACE算法,在对已有的结构优化设计算法深入理解的基础上,对PEG算法进行了改进,得到了一种可以进一步优化LDPC码环分布和最小距离的改进算法。仿真结果表明：由新算法构造出来的LDPC码的环分布和码重分布都明显优于PEG算法;其性能曲线在低信噪比时与原算法相差不大,而随着信噪比的增加可以有效地降低错误平层。     

非规则LDPC码的不等错误保护性能研究

提出了一种具有不等错误保护性能的非规则低密度校验(LDPC,low-density parity-check)码信道编码方案, 构造了重量递增校验(weight-increasing parity-check)矩阵,系统编码时,重要信息比特映射到LDPC码的“精华”比特上。AWGN和Rayliegh衰落信道的仿真结果表明,与随机构造的非规则LDPC码相比,WICP-LDPC码具有好的UEP性能。     

基于联合判决消息传递机制的LDPC码译码算法研究

采用消息传递算法(Message passing algorithm)对LDPC码进行译码时,变量消息的振荡会引起错误的发生.本文以(600.300)非规则LDPC码仿真实验为例分析了不同译码效果下判决消息均值的分布特点,并结合环的特点,分析了译码产生错误判决的原因.研究了"纠删"型消息传递机制和联合判决迭代停止准则,针对判决消息出现振荡情况,提出以"纠删"方式处理变量消息的更新,并结合变量节点判决消息均值分布趋势与伴随式结果确定迭代终止条件.在此基础上,提出一种新的LDPC码译码算法.仿真分析表明,新的译码算法能够在减少迭代次数和降低译码复杂度的同时,有效提高译码的纠错性能.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.