5083Al/1060Al/TA1/Ni/SUS304五层爆炸复合板退火组织演化及力学性能

为改善5083Al和304不锈钢爆炸焊接质量,提升隔热效果,本研究采用1060Al、TA1和Ni作夹层材料,制备了具有热传导梯度的五层爆炸复合板。为消除爆炸焊接后的残余应力,减少绝热剪切带和微裂纹等缺陷,采用550℃×60min退火工艺对五层爆炸复合板进行退火处理,并通过SEM、EBSD和万能试验机等手段,分析研究退火对其组织演化及力学性能的影响。结果表明：五层爆炸复合板的4个焊接界面均呈波形,且在界面处存在微裂纹、孔洞、绝热剪切带和漩涡区等缺陷。经退火处理,4个焊接界面均发生不同程度的再结晶,微裂纹、绝热剪切带等缺陷得到有效改善;5083Al/1060Al/TA1界面的β相和Al-Ti金属间化合物增多,TA1/Ni界面在原TiNi₃熔化层的基础上新增TiNi熔化层和Ti₂Ni熔化层。界面抗拉剪强度均有所降低,但均仍远高于相应国标使用要求;拉脱试样在5083Al/1060Al界面断裂分离。     

爆炸焊接TA2/316L复合板界面的微观分析

采用扫描电镜、能谱仪和显微硬度计，对爆炸焊接316L／TA2复合板结合界面的显微组织，成分和显微硬度进行了研究。结果表明，界面呈波状；316L与TA2结合界面之间有一层约为5μm的熔化层：波尾处存在漩涡状熔化块，熔化块内有微裂纹和气孔；界面附近的基体组织产生了剧烈的塑性变形；钛一侧存在绝热剪切带；界面附近的原子存在扩散现象；界面区的显微硬度有显著的提高。     

TA1/Q235R爆炸焊接复合板界面组织及力学性能

通过扫描电子显微镜（SEM）和能谱扫描仪（EDS）等分析方法，结合力学性能试验，研究了TA1/Q235R爆炸焊接复合板的界面组织与力学性能。结果表明：TA1/Q235R在爆炸焊接后形成了规律的波状结合界面以及不均匀的漩涡状组织。漩涡组织主要由TiFe、TiFe2等脆性金属间化合物组成，漩涡组织中裂纹、夹杂物、脆性金属间化合物等缺陷导致界面的破坏易沿波形轨迹发生；钛/钢界面拉伸剪切强度达194 MPa，复合板的最大抗拉强度为440 MPa；拉剪断口表现为以脆性断口为主的混合断裂特征，断口特征表明漩涡组织中金属熔化层对钢侧的结合强度高于钛侧。板材拉伸断口为韧性断口。     

基于试验和数值模拟的TC1/1060/6061爆炸焊接复合板界面分析

将薄层钛合金板与铝合金板结合可以得到具有优异性能的钛/铝复合板,具有广阔的应用前景.采用爆炸焊接技术成功制备了TC1/1060/6061复合板,对2个界面的界面形貌和元素进行测试,分析夹层存在的优势;同时建立与试验条件一致的有限元模型,对界面状态和焊接过程进行分析,最后对复合板进行拉伸试验和剪切试验,验证界面结合质量.结果表明,TC1/1060界面为直线型形貌,1060/6061界面为波状形貌,且每个波形都伴随着涡流区,TC1/1060界面处的元素扩散范围为4.38μm,且没有检测到钛/铝金属间化合物的产生.数值模拟再现爆炸焊接过程中射流的形成,界面温度沿着界面形貌分布,界面压力在碰撞点处达到最大,且呈现出椭圆形分布,复合板具有较高的抗拉强度和剪切强度,满足结构使用需求.     

Al5052/Mg-9.5Li-2Al覆板的界面组织与力学性能(英文)

通过冷轧制备出了Al5052/Mg-9.5Li-2Al合金复合板,研究了复合板退火后的组织与力学性能。结果表明:退火后复合板的结合界面上没有出现类似裂纹或孔洞的缺陷。经623或623 K以上的温度退火后,合金复合的界面形成反应相。Mg-9.5Li-2Al板和Al5052板之间结合界面处的主要反应相依次为α-Mg+β-Li相、Mg17Al12相、Li-dissolved Al3Mg2相和α-Al。在一定温度范围内,随退火温度的升高,界面结合强度逐渐增加。当退火温度为623 K时,复合板的结合强度达到最大值17.83 MPa,而且具有良好的塑性,延伸率达到18.7%,另外,界面未出现剥离现象。当退火温度为673 K时,覆板的拉伸性能由于界面剥离而恶化。     

爆炸复合TA2/316L板的组织和性能研究

评估了爆炸复合TA2/316L板的连接能力,采用SEM、EDS、XRD等试验方法研究了复合板结合区附近的显微组织结构和成分,并对复合板进行了拉剪实验.结果表明,结合区形貌呈波状,结合界面附近形成细晶区;结合区存在不连续的熔合层,该层含有大量金属基体小碎块和合金化后生成的金属间化合物,并产生了裂纹、气孔,且波状结合界面不同位置组织成分分布不均匀等焊接缺陷;两基板之间发生了元素扩散;拉剪实验各项性能满足复合材料使用要求,拉伸后波状界面发生了分离.     

退火温度对铜/铝/铜复合板结合性能的影响

采用冷轧复合法制备Cu/Al/Cu 3层复合板,研究不同退火温度对Cu/Al/Cu复合板结合性能的影响。采用光学显微镜(OM)及扫描电镜(SEM)观察界面过渡层的微观组织形貌,采用EDX分析界面物相成分,采用室温拉伸实验检测结合界面的结合强度。结果表明,退火温度越高,界面扩散层越明显,扩散层厚度越大,增长的速度越快;随着温度升高,复合界面处生成金属间化合物Cu_9Al_4、CuAl_2和CuAl。退火温度达到550℃时,界面层还会生成Cu_4Al_3和Cu_3Al_2。界面的结合强度随着退火温度的升高先上升后下降,最后趋于稳定。冷轧复合法制备的Cu/Al/Cu复合板最佳退火温度为350℃。     

Interfacial Microstructure and Mechanical Properties of Al5052/Mg-9.5Li-2Al Alloy Clad Plates

通过冷轧制备出了Al5052/Mg-9.5Li-2Al合金复合板,研究了复合板退火后的组织与力学性能。结果表明:退火后复合板的结合界面上没有出现类似裂纹或孔洞的缺陷。经623或623 K以上的温度退火后,合金复合的界面形成反应相。Mg-9.5Li-2Al板和Al5052板之间结合界面处的主要反应相依次为α-Mg+β-Li相、Mg17Al12相、Li-dissolved Al3Mg2相和α-Al。在一定温度范围内,随退火温度的升高,界面结合强度逐渐增加。当退火温度为623 K时,复合板的结合强度达到最大值17.83 MPa,而且具有良好的塑性,延伸率达到18.7%,另外,界面未出现剥离现象。当退火温度为673 K时,覆板的拉伸性能由于界面剥离而恶化。     

退火温度对Mg-Li/Al复合板界面组织与结合强度的影响

通过温轧制备5083Al/Mg-9.5Li-2Al/5083Al复合板,经200℃～400℃退火1h处理,利用扫描电子显微镜(SEM)和EDS对所制备的复合板进行显微组织结构观察,采用粘连法测试退火复合板的结合强度。结果表明,200℃温轧可以制备出界面结合良好的5083Al/Mg-9.5Li-2Al/5083Al复合板;复合板在350℃以上退火可形成连续的扩散层,扩散层由靠近镁锂合金一侧的Mg17Al12相和靠近铝合金一侧的Al3Mg2相组成,Li原子固溶于Al3Mg2相中;结合强度测试结果表明,当退火温度为350℃时,界面结合强度最高,达到了20MPa。     

退火工艺对Ti/Al复合板组织和性能的影响

针对以纯钛板和工业纯铝为原料铸造复合得到的Ti/Al复合板,采用不同保温时间的退火工艺制度研究了退火时间对Ti/Al复合板的组织和性能的影响。结果表明:随着退火时间延长,在复合界面处的扩散层宽度增大。在退火过程中,Ti-Al系金属间化合物的形成和生长是导致Ti/Al复合界面显微硬度增加、结合强度下降的主要原因。在浇铸温度为700℃、退火温度为550℃、保温2 h退火后,Ti/Al复合板结合强度有较大提升,为最佳退火工艺。     

Investigation of the dependency of the upper critical magnetic field on the content x in Y1−xYbx/2Gdx/2Ba2Cu3O7−y superconducting structures

The Y_1−xYb_x/2Gd_x/2Ba₂Cu₃O_7−y superconducting samples for x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0 were prepared by using the solid-state reaction technique. Resistivity measurements of the samples were performed in QD–PPMS system under different magnetic fields up to 5 T in zero fields cooling regime. Using the resistivity data, the upper critical magnetic field H_c2(0) at T = 0 K for 50% of R_n was calculated by the extrapolation H_c2(T) to the temperature T = 0 K. The coherence length in T = 0 K were calculated from H_c2(0) and the effects of x in the composition on both the coherence length and the upper critical magnetic field were examined. The results showed that H_c2(0) varied from 84.05 to 122.26 T with the content x. The upper critical magnetic field in the temperature T = 0 K slightly decreased with increasing the content x. Using the content x, the upper critical magnetic field can be controlled and this can be used in the superconductivity applications.     

Cr/CrN/CrNC/CrC/Cr-DLC梯度膜层的研究

采用中频磁控溅射结合离子源技术沉积Cr／CrN／CrNC／CrC／Cr-DLC膜层。利用扫描电镜（SEM）、电子能谱（EDS）、Raman光谱和俄歇深层剥层分别对膜层微观形貌、成分组成、键结构及梯度成分深层分布进行分析；采用努氏显微硬度计、摩擦磨损试验机、划痕仪及洛氏硬度计测评膜层机械性能。结果表明：采用中频磁控溅射可沉积出大面积Cr／CrN／CrNC／CrC／Cr-DLC梯度膜层；Cr溅射功率对C键结构影响不大，但表层DLC中Cr的含量和膜层厚度随中频功率增大而增大；随DLC中掺Cr量增多，膜层硬度及摩擦因数略有上升；采用梯度过渡层及掺入金属Cr提高了膜层附着力，但过高的中频功率使沉积离子能量偏高，膜层压应力增加反而降低了膜层附着性能。     

On the mechanism of current-transport in Cu/CdS/SnO2/In-Ga structures

The structural and optical properties of CdS films deposited by evaporation were investigated. X-ray diffraction study showed that CdS films were polycrystalline in nature with zinc-blende structure and a strong (1 1 1) texture. The study has been made on the behavior of Cu/n-CdS thin film junction on SnO₂ coated glass substrate grown using thermal evaporation method. The forward bias current-voltage (I-V) characteristics of Cu/CdS/SnO₂/In-Ga structures have been investigated in the temperature range of 130-325 K. The semi-logarithmic lnI-V characteristics based on the Thermionic emission (TE) mechanism showed a decrease in the ideality factor (n) and an increase in the zero-bias barrier height (Φ_Bo) with the increasing temperature. The values of n and Φ_Bo change from 8.98 and 0.29 eV (at 130 K) to 3.42 and 0.72 eV (at 325 K), respectively. The conventional Richardson plot of the ln(I_o/T²) vs q/kT shows nonlinear behavior. The forward bias current I is found to be proportional to I_o(T)exp(AV), where A is the slope of ln(I)-V plot and almost independent of the applied bias voltage and temperature, and I_o(T) is relatively a weak function of temperature. These results indicate that the mechanism of charge transport in the SnO₂/CdS/Cu structure in the whole temperature range is performed by tunneling among interface states/traps or dislocations intersecting the space-charge region. In addition, voltage dependent values of resistance (R_i) were obtained from forward and reverse bias I-V characteristics by using Ohm's law for each temperature level.     

FIB/TEM/EELS micro/nanometric investigations of the effects of laser ablation on the diamond/binder structure in polycrystalline diamond composites

Laser ablation of diamond composites is of high interest for a wide range of industries for making high wear resistant tools/components. In this context, the paper studies the effects of pulsed laser ablation on a polycrystalline diamond composite (CMX850, average grain size 2 μm, Cobalt binder volume, circa 15%) by identifying the residual carbonic allotropes and metallic binder traces in the ablation region. For this study, grooves were first laser (DMG LASERTEC 60 HSC Q-switched Nd:YAG, pulse duration 20 μs, frequency 10 kHz) ablated into the surface of the polycrystalline diamond structure, then, by using Focused Ion Beam (FIB) techniques, a thin section across the groove was extracted, which allowed the identification of the distinct microstructural characteristics below the ablated surfaces at sites that experienced high and low laser fluence. Using Transmission Electron Microscopy (TEM) imaging and Electron Energy Loss Spectroscopy (EELS) scans, the extracted lamella revealed that amorphous carbon and graphitic structures were formed as a consequence of the ablation process and an abrupt interface graphite to polycrystalline diamond was evident showing an undisturbed polycrystalline diamond (PCD) composite substructure below the graphitic boundary. Furthermore partially evacuated pockets containing traces of the Cobalt binder were identified within the amorphic/graphitic regions of the lamella. The examination of local high and low laser fluence ablated sites has revealed that the extent of residual deposits (amorphic and graphitic carbon) is related to the level of fluence/thermal activity during ablation.     

Study of the electrical conduction behaviour of the Ba1−xLaxTi1−xNixO3 (x 0.10) system

The electrical conduction behaviour of the Ba_1−xLa_xTi_1−xNi_xO₃ (x 0.10) system has been studied by complex plane impedance analysis and measurements of a.c. conductivity in the temperature range 400–575 K. The values of the bulk resistance for these samples are obtained from a circular arc passing through the origin in their impedance plots. A.c. conductivity obeys the relation σ_a.c.αω⁸ in the temperature range of measurements. These results indicate that conduction occurs in this system because of hopping of charge carriers between localized nickel sites.     

Determination of the composition of InxGa1−xN from strain measurements

The use of incorrect GaN and InN anisotropic elastic constants and unstrained lattice constants, or the erroneous interpolation of InGaN elastic coefficients, have led to several errors in the calculations of compositions of ternary alloys based on strain measurements. To avoid this, statistically estimated elastic constants are used to calculate the correct coefficients at any composition assuming they follow Vegard’s law as happens for relaxed lattice constants. In consequence, a general equation to extract x from experimentally determined a and c cell parameters in biaxial strained wurtzite In_xGa_1−xN is proposed. The validity of this equation is confirmed: inputting structural parameters deduced from fine electron diffraction of non-phase-segregated epilayers (0.4 < x < 0.8) gives outputs that are in agreement with compositions directly measured by energy-dispersive X-ray analysis in a scanning transmission electron microscope; high-resolution X-ray diffraction analysis also supports these findings. The proposed elastic behavior of InGaN correlates well with other experiments in the literature.     

The effects of the combined substitution of Y and Ga on the crystallographic structure of Nd2−xYxFe17−yGay intermetallic compounds

The effects of the combined substitution of Y and Ga on the crystallographic structure of Nd_2−xY_xFe_17−yGa_y compounds with x = 0, 0.5, 1.0, 1.5 and y = 0, 1, 2, 3 have been investigated using X-ray and neutron powder diffractions. Rietveld refinements of the diffraction data indicate that all the samples crystallize in the rhombohedral Th₂Zn₁₇-type structure with only small amounts of alpha iron. It is found that the addition of Ga atoms lessens the decreasing rates of the a-axis and unit cell volume V on the Y content but almost does not affect the decreasing rates of the c-axis. However, the substitution of Y has a positive effect on the increasing rates of the a-axis and unit cell volume V on the Ga content but has a very slight effect on the increasing rate of the c-axis. The c/a ratio of Nd_2−xY_xFe_17−yGa_y as a function of Ga content exhibits a different increase for different Y content owe to the combined effects of Y and Ga on the crystallographic structure. The substitution of Y is found to have little effect on the site occupancy of Ga in Nd_2−xY_xFe_17−yGa_y. The combined effects of Y and Ga on the bond lengths and ASBL of Nd_2−xY_xFe_17−yGa_y indicate that more bonds detrimental to ferromagnetic exchange can be modulated into the desirable ferromagnetic exchange distance range through suitable combined substitution, which provides a valuable way to improve the magnetic properties of rare earth-transition intermetallic compounds.     

Influence of the addition of vanadium on the hydrogenation properties of the compounds TiFe0.9Vx and TiFe0.8Mn0.1Vx (x = 0, 0.05 and 0.1)

TiFe_0.9 and TiFe_0.8Mn_0.1 hydrides have suitable equilibrium pressures at ambient conditions and are potential candidates for hydrogen storage applications. In this work, we study the influence of the addition of small amounts of vanadium on the hydrogenation properties of TiFe_0.9V_x and TiFe_0.8Mn_0.1V_x (x = 0, 0.05 and 0.1) alloys. The excess of Ti from TiFe in these materials results in the precipitation of Ti and Ti₂Fe-type phases. In the analysis of the chemical composition, vanadium was observed in small amount in all phases for each sample which contains vanadium. Vanadium tends to substitute Fe sites, which results in a decrease of the plateau pressures. The addition of vanadium as TiFe_0.8Mn_0.1V_x (x = 0.05 and 0.1) alloys has beneficial effects on the equilibrium plateaus of the hydrides: the plateaus become flatter and a significant reduction in the pressure hysteresis is observed.     

Influence of the TbFe2 crystallization on the magnetic and magnetostrictive properties of (Fe3Ga/TbFe2)n heterostructures

In this work we have investigated (Fe₃Ga/TbFe₂)_n multilayers grown by sputtering at room temperature. These multilayers exhibit a large coercivity associated to the crystalline TbFe₂ Laves phase. To reduce the coercivity it is necessary to control the crystallization of that material. In this work, we focus on the analysis of the properties of the TbFe₂ layers. In the as-grown heterostructures we have found evidence of nanoaggregates in the TbFe₂ layers. The Fe₃Ga thickness and the thermal treatments have an influence on the volume of these nanoprecipitates. In the annealed samples, when increasing the Fe₃Ga thickness we observe a decrease in the nanoaggregate volume and thus in the coercivity. The experimental results indicate that the crystallization of the TbFe₂ depends on the Tb diffusion promoted by the thermal treatment and on the stiffness factor (Y/α) of the Fe₃Ga layer. The magnetostrictive properties are also strongly influenced by the crystallization of the TbFe₂. We have achieved a maximum magnetostriction constant of nearly 550 ppm with a coercive field close to 400 Oe.