大功率平面连接结构倒装LED的热仿真及热分析

Conventional GaN-based flip-chip light-emitting diodes （CFC-LEDs） use Au bumps to contact the LED chip and Si submount, however the contact area is constrained by the number of Au bumps, limiting the heat dissipation performance. This paper presents a flat surface high power GaN-based flip-chip light emitting diode （SFC-LED）, which can greatly improve the heat dissipation performance of the device. In order to understand the thermal performance of the SFC-LED thoroughly, a 3-D finite element model （FEM） is developed, and ANSYS is used to simulate the thermal performance. The temperature distributions of the SFC-LED and the CFC-LED are shown in this article, and the junction temperature simulation values of the SFC-LED and the CFC-LED are 112.80 ℃ and 122.97℃C, respectively. Simulation results prove that the junction temperature of the new structure is 10.17 ℃ lower than that of the conventional structure. Even if the CFC-LED has 24 Au bumps, the thermal resistance of the new structure is still far less than that of the conventional structure. The SFC-LED has a better thermal property.     

A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability

To improve the logic stability of conventional multi-valued logic (MVL) circuits designed with a GaN-based resonate tunneling diode (RTD),we proposed a GaN/InGaN/AlGaN multi-quantum well (MQW) RTD.The proposed RTD was simulated through solving the coupled Schrodinger and Poisson equations in the numerical non-equilibrium Green's function (NEGF) method on the TCAD platform.The proposed RTD was grown layer by layer in epitaxial technologies.Simulated results indicate that its current-voltage characteristic appears to have a wider total negative differential resistance region than those of conventional ones and an obvious hysteresis loop at room temperature.To increase the Al composite of AlGaN barrier layers properly results in increasing of both the total negative differential resistance region width and the hysteresis loop width,which is helpful to improve the logic stability of MVL circuits.Moreover,the complement resonate tunneling transistor pair consisted of the proposed RTDs or the proposed RTD and enhanced mode HEMT controlled RTD is capable of generating versatile MVL modes at different supply voltages less than 3.3 V,which is very attractive for implementing more complex MVL function digital integrated circuits and systems with less devices,super high speed linear or nonlinear ADC and voltage sensors with a built-in super high speed ADC function.     

Current Spreading Eff ects in Vertical GaN-Based Light-Emitting Dio de on Si(111) Substrate

The optimal design of GaN-based Light-emitting diode (LED) is important for its reliability. In this work, a new three-Dimensional (3D) circuit model with a resistor network is developed to study the current distribution in the active layer of vertical conducting GaN-based LED grown on Si(111) substrate with different struc-tures and electrode patterns. It consists of resistance of Transparent conductive layer (TCL), resistance of epitax-ial layer, intrinsic diodes presenting the active layer, and AlN/Si junction as which the multilayer of AlN/Si is as-sumed. Simulations results of current distribution in active layers of two kinds of LED structures show that current distribution uniformity is greatly affected by the electrode pattern and the LED structure. Furthermore, the exper-imentally measured light emission uniformity agrees well with simulation results. The electrical and optical char-acteristics of LED are obviously affected by the current distribution uniformity.     

An implantable wireless powered light source

A wireless powered small volume light source composed of light emitting diode(LED) array is developed for implantation. According to the volt-ampere characteristics of LED and the load characteristics of coil coupling power supply, the light power and work distance of implant LED-array are optimized by changing the number and series-parallel connection mode of LEDs in receiver. The wireless powered implant can provide 5.4 m W light. The entire implant is seamlessly packaged within parylene, a biocompatible material, coating by chemical vapor depositing. The volume of the implant is 9 mm×4 mm×3 mm, the weight of which is only 0.25 g. The device can work continuously for more than three weeks in 0.9% saline and the prime prototype of the device has been validated by animal implantation.     

Thermal analysis of LED lighting system with different fin heat sinks

This paper designs a 3 × 3 light emitting diode (LED) array with a total power of 9 W, presents a thermal analysis of plate fin, in-line and staggered pin fin heat sinks for a high power LED lighting system, and develops a 3D one-fourth finite element (FE) model to predict the system temperature distribution. Three kinds of heat sinks are compared under the same conditions. It is found that LED chip junction temperature is 48.978 ℃ when the fins of heat sink are aligned alternately.     

Thermal analysis of LED lighting system with different fin heat sinks

This paper designs a 3×3 light emitting diode(LED) array with a total power of 9 W,presents a thermal analysis of plate fin,in-line and staggered pin fin heat sinks for a high power LED lighting system,and develops a 3D one-fourth finite element(FE) model to predict the system temperature distribution.Three kinds of heat sinks are compared under the same conditions.It is found that LED chip junction temperature is 48.978℃when the fins of heat sink are aligned alternately.     

基于非线性DAC的高速直接数字频率合成器

This paper presents a high speed ROM-less direct digital frequency synthesizer （DDFS） which has a phase resolution of 32 bits and a magnitude resolution of 10 bits. A 10-bit nonlinear segmented DAC is used in place of the ROM look-up table for phase-to-sine amplitude conversion and the linear DAC in a conventional DDFS. The design procedure for implementing the nonlinear DAC is presented. To ensure high speed, current mode logic （CML） is used. The chip is implemented in Chartered 0.35μm COMS technology with active area of 2.0 × 2.5 mm^2 and total power consumption of 400 mW at a single 3.3 V supply voltage. The maximum operating frequency is 850 MHz at room temperature and 1.0 GHz at 0℃.     

Improvements in performance and reliability for segmented linear LED drivers

Several improvements have been made to the conventional segmented linear light-emitting diode (LED) driver topology to enhance the performance and reliability of the system. A compensation technology is proposed to adaptively adjust the impedance of the sensing circuit to keep the output luminance constant in case of line voltage variations. Based on the proposed technology, an active over temperature protection technique is presented to constrain the averaged LED current according to the junction temperature to prevent the driving IC from overheating. Otherwise, a pulse width modulation dimming circuitry which is compatible with input logic level ranging from 1.8 to 20 V is proposed. The proposed technologies are implemented in a 1.0 μm 5/20/500 V BCD technology with three high voltage MOSFETs integrated on chip. The experimental results show that within 220±15% V, 50 Hz AC line-voltage variation, the output luminance is restrained to 4% in total. The output luminance can also be effectively controlled by the PWM dimming circuitry, and a dimming range of 95% is achieved with good linearity.     

Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure

This work reports the fabrication of via-thin-film light-emitting diode (via-TF-LED) to improve the light output power (LOP) of blue/white GaN-based LEDs grown on Si (111) substrates.The as-fabricated via-TF-LEDs were featured with a roughened n-GaN surface and the p-GaN surface bonded to a wafer carrier with a silver-based reflective electrode,together with an array of embedded n-type via pillar metal contact from the p-GaN surface etched through the multiple-quantum-wells (MQWs) into the n-GaN layer.When operated at 350 mA,the via-TF-LED gave an enhanced blue LOP by 7.8％ and over 3.5 times as compared to the vertical thin-film LED (TF-LED) and the conventional lateral structure LED (LS-LED).After covering with yellow phosphor that converts some blue photons into yellow light,the via-TF-LED emitted an enhanced white luminous flux by 13.5％ and over 5 times,as compared with the white TF-LED and the white LS-LED,respectively.The significant LOP improvement of the via-TF-LED was attributed to the elimination of light absorption by the Si (111) epitaxial substrate and the finger-like n-electrodes on the roughened emitting surface.     

An Analysis of the Equivalent Resistance of PIN Diodes at Microwave Frequencies

The PIN diode is an especial charge controldevice. The middle zone of a PIN diode between theheavily doped P-type semiconductor ( P ) and N-typesemiconductor ( N ) is so called region I with highresistivity, as shown in Fig.1. The region I of apractical PIN diode consists of the high resistivity Pmaterial called I(π)-type or high resistivity N materialcalled I(υ)-type. The density of carriers in the region Iis controlled mainly by the applied bias voltage.Therefore, the resistance o…     

A monolithic light-emitting-diode display

A monolithic 5 × 7 array of planar diffused p-n junctions in GaAs1-xPx(x≃0.38) has been built for a light-emitting diode (LED) alphanumeric readout. A character formed by this readout is 0.246 cm high and 0.170 cm wide. The monolithic chip has all p-n junctions, n-contacts, p-contacts, interconnections and terminal metallurgy on the epitaxial layer which represents a departure from the conventional methods of making LED arrays, namely wire bonding discrete chips with contacts on two sides in a hybrid configuration. Each LED in the array is connected to one of the terminals arranged around the periphery of the chip and individually addressed by direct current from a driver on a silicon control chip. For each character position in a display there is one monolithic LED chip and one monolithic silicon control chip solder joined to terminals on a glass plate and interconnected by Cr-Cu-Cr lines evaporated onto the glass substrate. The display is addressed by serial information provided from an ROM which is read into a 35-stage shift register on the control chip which controls the drivers. Thus with two standard parts, any N-character display can be fabricated with considerable reduction in handling since no discrete elements or wire bonds are used.     

可见光通信感知一体化芯片及关键技术

通信感知一体化是6G关键技术之一。氮化镓量子阱二极管的发射光谱和光探测谱存在重叠区,量子阱二极管光探测器能够吸收具有相同量子阱结构的光发射器件发出的短波长光子,生成光电流。该文基于该物理现象,研制同质集成光发射光接收器件的氮化镓光电子芯片,由于单个量子阱二极管芯片器件自身发光干扰导致感知外界光信号弱,但是收发分离芯片又存在效率低、紧凑性弱、鲁棒性差等问题,将具有相同量子阱结构的量子阱二极管器件制备在同一块芯片上,分别作为发光和接收器件,构建自由空间逆向光通信系统,探索可见光通信感知一体化芯片及关键技术。     

关于LED单灯正向电压VF不良的探讨

文章基于LED芯片和LED单灯的工作原理和制程工艺,探讨了LED芯片封装以后正向电压K升高和降低的常见原因,并提出了改善措施。对于GaN基双电极芯片,由于芯片工艺制程或后续封装工艺因素,造成芯片表面镀层（ITO或Ni／Au）与P—GaN外延层之间的结合被破坏,欧姆接触电阻变大。对于GaAS基单电极芯片,由于封装材料和工艺因素,导致芯片背金（N—electrode）与银胶,或银胶与支架之间的接触电阻变大,从而LED正向电压VF升高。LED正向电压VF降低最常见的原因为芯片PN结被ESD或外界大电流损伤或软击穿,反向漏电过大,失去了二极管固有的I-V特性。     

A Ga-doped ZnO transparent conduct layer for GaN-based LEDs

An 8 μm thick Ga-doped ZnO (GZO) film grown by metal-source vapor phase epitaxy was deposited on a GaN-based light-emitting diode (LED) to substitute for the conventional ITO as a transparent conduct layer (TCL). Electroluminescence spectra exhibited that the intensity value of LED emission with a GZO TCL is markedly improved by 23.6% as compared to an LED with an ITO TCL at 20 mA. In addition, the forward voltage of the LED with a GZO TCL at 20 mA is higher than that of the conventional LED. To investigate the reason for the increase of the forward voltage, X-ray photoelectron spectroscopy was performed to analyze the interface properties of the GZO/p-GaN heterojunction. The large valence band offset (2.24±0.21 eV) resulting from the formation of Ga2O3 in the GZO/p-GaN interface was attributed to the increase of the forward voltage.     

Study of Phosphor Thermal-Isolated Packaging Technologies for High-Power White Light-Emitting Diodes

A novel packaging configuration for high-power phosphor-converting white light-emitting diodes (LEDs) application is reported. In this packaging configuration, a thermal-isolated encapsulant layer was used to separate the phosphor coating layer from the LED chip and the submount. Experimental and finite-element method simulation results proved that this thermal management can prevent the heat of LED chip from transferring to the phosphor coating layer. The surface temperature of the phosphor coating layer is a 16.8degC lower than that of the conventional packaging at 500-mA driver current for 1-mm power GaN-based LED chip. Experimental results also show that this packaging configuration can improve the light-emitting power performance and color characteristics stability of the white LED, especially under high current operating condition.     

新型表面再构的倒装AlGaInP LED

研究一种表面再构的具有全方位反光镜(ODR)结构的倒装AlGaInP半导体发光二极管(LED)。通过湿法腐蚀方法再构N-AlGaInP盖层表面,形成类金字塔的表面结构,使不同角度入射的光有更多的机会出射。比较了表面再构LED与常规LED的电、光学特性,在注入电流为20 mA时,经过表面再构LED的轴向光强和输出光功率是常规LED的1.5倍,表面再构后大大提高了LED的外量子效率,减少了LED内部热量的积累,提高了LED芯片的可靠性。     

Design and fabrication of AlGaInP LED array with integrated GaAsdecode circuits

A two-dimensional (2-D) AlGaInP light-emitting diode (LED) array with monolithic integration of one-to-four GaAs MESFET decode circuits has been developed as an image source for portable virtual displays. The epitaxial layers of AlGaInP LEDs with light emission at a wavelength of 605 nm were grown on a semi-insulating GaAs substrate by organometallic vapor phase epitaxy. LED arrays consisting of 240 columns and 144 rows for a total of 34560 pixels were then fabricated on such epitaxial wafers. One-to-four GaAs MESFET decode circuits consisting of eight MESFET's for each decode circuit and a total of 768 MESFET's for a 34 K decode array were fabricated on the semi-insulating GaAs substrate with removal of LED epitaxial layers around the periphery of the LED array. LED arrays with the integrated decode circuits provide a great reduction in I/O terminals. The I/O count of the demonstrated 34 K decode LED array is 104, which is much less than 384 for a comparable array without the integrated decode circuits. The pixel pitch of the LED array is 20 μm and each LED pixel has 10×10 μm² emitting area. The output power of LED pixel is 50 nW at an operation current of 50 μA. The address voltages used to activate the column decode circuits are 3 V for high and -3 V for low, while the address voltages used to activate the row decode circuits are 0 V for high and -3 V for low. The operating voltage of the decode LED array ranges from 3 to 5 V, and the total power dissipation of the decode LED array is less than 16 mW     

High-current InGaAsP-InP phototransistors and some monolithic optical devices

High-gain InGaAsP/InP heterojunction phototransistors (HPT's) have been fabricated by a liquid-phase epitaxial (LPE) technique. A collector current as high as 170 mA has been achieved at a 2-V bias and a 155-µW incident-light power. The optical gain is 1180. A monolithic optical device has been constructed in a InGaAsP/InP system which includes the HPT and a double heterojunction (DH) light-emitting diode (LED). The monolithic optical device is designable as an optical switching and an optical bistable or a light amplification device by controlling positive feedback between the HPT and the LED. A light amplification system comprised of a discrete InGaAsP/InP laser diode and a high-current HPT, has exhibited incoherent-coherent conversion with a positive amplification.     

Life-time estimation of high-power blue light-emitting diode chips

We have proposed a new concept of metal package by which we can estimate the lifetime of blue light-emitting diode (LED) chips with high accuracy. Components in conventional LED package which may obscure the degradation behavior of LED chip itself were removed or replaced by other materials or components. Three kinds of chips from different manufacturers were analyzed in this study using proposed metal packages. In this paper, the optical and electrical characteristics such as light-output degradation and reverse leakage current of high-power blue LED chip were investigated and analyzed. Also, the relationship between light-output degradation and electrical characteristics of LED chip was described. With aging time of 5000 h, only one kind of blue LED chip shows enough light-output degradation to estimate life-time.     

基于AlxGa1-xN/InyGa1-yN DBR谐振腔的单片集成白光LED

本文设计和研究了含有蓝光和黄光两个量子阱有源区的单片集成白光发光二极管(LED)。为了提高黄光在混合光中的比例,我们采用AlxGaN1-x/InyGa1-yN 分布式布拉格反射镜(DBR)构成谐振腔对黄光的提取效率进行加强以增大其出射光功率。模拟结果表明,优化设计的谐振腔LED有利于得到高品质白光出射。