一种基于自适应差分进化算法的薄膜参数表征方法研究（特邀）

依据穆勒椭偏测量方法中偏振光的传输方式,文中提出了一种基于自适应差分进化算法（SADE）的各向同性纳米薄膜厚度与光学常数的表征方法。通过建立出射光强关于待测标准样片穆勒矩阵的最小二乘模型,用SADE算法对穆勒矩阵元素进行求解,并将拟合得到的穆勒光谱曲线与用双旋转补偿器穆勒矩阵椭偏仪(DRC-MME)测量得到的穆勒光谱图进行了比较,利用传输矩阵求解薄膜厚度。对标定值分别为(104.2±0.4) nm和(398.4±0.4) nm的SiO₂/Si标准样片进行仿真计算,实验表明:当分别迭代到80次和87次时,目标函数光强的残差平方和收敛到最小值0.97和1.01,得到的膜厚计算值分别是(103.8±0.6) nm和(397.8±0.6) nm,相对误差均小于1%。同时用计量型椭偏仪根据得到的折射率进行计算,得到膜厚的计算值分别为(104.1±0.6) nm和(398.2±0.6) nm,验证了SADE在相近收敛速度下对各向同性纳米薄膜参数求解过程中具有计算简单和可以准确的找到全局最优解的特点。     

金属反射镜对外差干涉椭偏测量精度的影响

采用声光调制器设计了一种透射式外差干涉椭偏测量系统.实验测量了单层透明氧化铟锡(ITO)膜,膜厚和折射率测量误差分别达8nm和7%.采用琼斯矢量法分析了金属反射镜引起的光束椭偏化对测量结果的影响.从光学系统中移出被测样品得到的标定数据,可以消除金属反射镜本身退偏效应的影响,但无法消除退偏效应和方位角误差共同作用所引入的椭偏参数测量误差.计算结果表明,退偏效应和方位角误差共同作用引入的膜厚测量误差可达4 nm左右,该误差与薄膜参数无关,与方位角误差近似成线性关系.     

光学元件磁流变加工驻留时间粒子群优化算法

为实现光学元件磁流变高精度加工,基于脉冲迭代原理,提出基于粒子群算法的驻留时间优化方法。该方法在脉冲迭代法的基础上引入粒子群算法对整体面型残差进行优化,通过对整体驻留时间的判定,从而实现每个驻留时间点的最优选择,达到高精度面形加工。通过对Φ156mm光学表面仿真加工,均方根(RMS)值和峰谷(PV)值从初始的169.164和1161.69nm收敛到23.4925和807.2156nm。仿真结果表明,该算法能在保证面形收敛精度的同时快速获得稳定可靠的驻留时间分布,能有效降低中频误差,其算法性能优于常用的脉冲迭代法。该算法为磁流变抛光光学元件过程中的驻留时间计算提供了一种解决方案。     

基于粒子群-神经网络算法的纳米薄膜参数表征

提出了一种利用椭圆偏振测量进行纳米薄膜参数数据处理的混合优化算法。以人工神经网络模型为基础,利用改进粒子群算法选择人工神经网络中的权值和阈值,建立改进粒子群-神经网络(IPSO-NN)算法模型对纳米薄膜参数进行数据处理,以获得更高精度的纳米薄膜参数。利用IPSO-NN算法模型计算标称厚度值为50和997.7 nm的硅上二氧化硅(SiO_2/Si)纳米薄膜厚度标准样片的薄膜参数,结果表明:两种尺寸的薄膜厚度计算结果相对误差均小于3%,说明了混合优化算法具有高精度的薄膜厚度和复折射率等薄膜参数的计算能力。同时通过实验证明了IPSO-NN算法模型能有效地优化迭代次数,具有收敛速度快、测量效率高等优势。     

干涉椭偏测量系统中分光镜引入的非线性误差

研究了一种采用声光调制器实现的透射式外差干涉椭偏(IE)测量系统。实验测量了单层透明ITO膜, 膜厚和折射率测量误差分别达到4 nm和6％。除了激光源和偏振器件之外, 分光镜也是重要的非线性误差源。研究了分光镜(BSs)退偏效应和方位角对椭偏测量误差的影响。采用琼斯矢量法推导出误差理论模型, 并数值计算了误差随分光镜光学参数和方位角的变化规律。计算结果表明, 由此引入的膜厚测量误差可达数纳米量级, 且与方位角误差近似成线性关系。退偏效应和方位角误差引入的非线性测量误差是互相关的, 不能通过移出被测样品的标定过程来完全消除。为了达到亚纳米级测量精度, 需要控制分光镜方位角误差在0.01°以内。根据分光镜退偏参数与非线性误差的关系, 可以设计或选择合适的分光镜。     

光学表面粒子污染物散射的单层薄膜调控特性

为了降低超精密低损耗光学元件表面粒子污染物的光散射损耗,文中提出通过在光学表面沉积单层薄膜来调控表面场强分布,从而降低散射损耗的方法。理论分析了K9玻璃超光滑光学表面不同厚度单层二氧化硅（SiO₂）和单层二氧化钛（TiO₂）薄膜表面上方半径为100 nm粒子污染物所在处的电场强度,理论分析结果发现,当SiO₂薄膜厚度为137.4 nm,TiO₂薄膜厚度为12.3 nm时,表面粒子污染物所在处的电场强度最小。在此基础上分别计算了光学元件表面沉积厚度为137.4 nm的单层SiO₂薄膜以及厚度为12.3 nm的单层TiO₂薄膜,表面粒子污染物的总散射损耗(S)和双向反射分布函数(BRDF),计算结果表明,在波长为632.8 nm的光垂直入射时,单层SiO₂薄膜和单层TiO₂薄膜可有效降低其表面粒子的BRDF,且可将K9玻璃表面的总散射分别降低12.40%和25.04%。实验验证了单层SiO₂薄膜对于表面粒子污染物散射降低的有效性。     

掺氮氧化钒薄膜的椭偏光谱表征

利用反应溅射法,在Si(100)衬底上沉积了掺N氧化钒薄膜.借用SE850椭偏仪对薄膜进行了近红外波段(1300-2300 nm)的光谱测量,运用Tauc-Lorentz模型对薄膜的椭偏光谱数据进行了拟合,并计算了薄膜的光学参数(n,k)和厚度.结果表明:随着掺N量的增加,氧化钒薄膜的光学参数(n,k)随之增加,而其沉...     

基于混合优化算法的纳米薄膜参数表征

为了在椭圆偏振测量过程中得到精确的纳米薄膜参数,提出了一种求解纳米薄膜参数的混合优化算法。结合人工神经网络算法反向传播和粒子群算法快速寻优的特点,建立了改进粒子群-神经网络(Improved Particle Swarm Optimization-Neural Network,IPSO-NN)混合优化算法。该算法在较少的迭代次数下具有快速跳出局部最优解的能力,从而快速寻找椭偏方程最优解。文中使用该算法对标称值为(26.7±0.4)nm的硅上二氧化硅纳米薄膜厚度标准样片进行薄膜参数计算。结果表明:采用IPSO-NN混合优化算法计算薄膜厚度时相对误差小于2%,折射率误差小于0.1。同时,文中通过实验对比了传统粒子群算法与IPSO-NN算法,验证了IPSO-NN算法计算薄膜参数时能有效优化迭代次数和寻找最优解的过程,实现快速收敛,提高计算效率。     

Si/SiO2多层膜线宽关键参数精细化表征技术研究

线边缘粗糙度(LER)和线宽粗糙度(LWR)是衡量线宽标准样片质量的重要指标。文中基于自溯源光栅标准物质的自溯源、高精密尺寸结构特性,提出了一种直接溯源型精确校准SEM放大倍率的方法,以实现SEM对线宽标准样片关键参数的测量与表征。利用校准后的SEM,对利用Si/SiO₂多层膜沉积技术制备的线宽名义值为500、200、100 nm样片进行关键参数的测量,采用幅值量化参数的均方根粗糙度RMS描述线边缘粗糙度与线宽粗糙度,并通过图像处理技术确定线边缘位置,对线宽边缘特性进行了精确表征。实验结果表明,名义值为500、200、100 nm对的线宽样片,其实测值分别为459.5、191.0、99.5 nm,σLER分别为2.70、2.35、2.30 nm,σLWR分别为3.90、3.30、2.80 nm,说明了多层膜线宽标准样片线边缘较为平整、线宽变化小、具有良好的均匀性与一致性。基于自溯源标准物质校准SEM的方法缩短了溯源链,提高了SEM的测量精度,实现了线宽及其边缘特性的精确表征,为高精度纳米尺度测量和微电子制造领域提供了计量支持。     

基于模式理论光栅椭偏参数反演的数值模拟

将一种广泛用于求解系统优化问题的方法——正单纯形法，求解光栅的椭偏方程。首先，利用求解光栅的傅立叶模式理论对TE和TM波的复反射系数进行求解。然后计算出其相应的椭偏参数(△，Ψ)，并在该值的基础上加入不同偏差的随机高斯噪声，将加入噪声后的值(△m，Ψm)作为模拟测量值。最后使用优化算法进行反演。通过对几种常用面形光栅椭偏参数的数值模拟，一方面表明傅立叶模式理论计算光栅的椭偏参数不仅精度高。而且速度快；另一方面表明利用正单纯形法得到的光栅参数值很接近于正演时假设的参数值，从而从理论上证明了利用椭偏法测量光栅各种光学参数的可行性。     

不同退火氛围对TiN/HfO2/SiO2/Si结构电荷分布的影响

热退火技术是集成电路制造过程中用来改善材料性能的重要手段。系统分析了两种不同的退火条件(氨气氛围和氧气氛围)对TiN/HfO₂/SiO₂/Si结构中电荷分布的影响,给出了不同退火条件下SiO₂/Si和HfO₂/SiO₂界面的界面电荷密度、HfO₂的体电荷密度以及HfO₂/SiO₂界面的界面偶极子的数值。研究结果表明,在氨气和氧气氛围中退火会使HfO₂/SiO₂界面的界面电荷密度减小、界面偶极子增加,而SiO₂/Si界面的界面电荷密度几乎不受退火影响。最后研究了不同退火氛围对电容平带电压的影响,发现两种不同的退火条件都会导致TiN/HfO₂/SiO₂/Si电容结构平带电压的正向漂移,基于退火对其电荷分布的影响研究,此正向漂移主要来源于退火导致的HfO₂/SiO₂界面的界面偶极子的增加。     

Thin-gate SiO2 films formed by in situ multiple rapidthermal processing

A reliable method of forming very thin SiO₂ films (<10 nm) has been developed by rapid thermal processing (RTP) in which in situ multiple RTP sequences have been employed. Sub-10-nm-thick SiO₂ films formed by single-step RTP oxidation (RTO) are superior to conventional furnace-grown SiO₂ on the SiO₂ /Si interface characteristics, dielectric strength, and time-dependent dielectric-breakdown (TDDB) characteristics. It has been confirmed that the reliability of SiO₂ film can be improved by pre-oxidation RTP cleaning (RTC) operated at 700-900°C for 20-60 s in a 1%HCl/Ar or H₂ ambient. The authors discuss the dielectric reliability of the SiO₂ films formed by single-step RTO in comparison with conventional furnace-grown SiO₂ films. The effects and optimum conditions of RTC prior to RTO on the TDDB characteristics are demonstrated. The dielectric properties of nitrided SiO₂ films formed via the N₂O-oxynitridation process are described     

Visible light emitting Si/SiO2 superlattices

Six-period superlattices of Si/SiO₂ have been grown at room temperature using molecular beam epitaxy. With this mature technology, the ultra-thin (1–3 nm) Si layers were grown to atomic layer precision. These layers were separated by 1 nm thick SiO₂ layers whose thickness was also well controlled by using a rate-limited oxidation process. The chemical and physical structures of the multilayers were characterized by cross-sectional TEM, X-ray diffraction, Raman spectroscopy, Auger sputter-profile, and X-ray photoelectron spectroscopy. The analysis showed that the Si layer is free of impurities and is amorphous, and that the SiO₂/Si interface is sharp (0.5 nm). Photoluminescence (PL) measurements were made at room temperature using 457.9 nm excitation. The PL peak occurred at wavelengths across the visible range for these multilayers. The peak energy position E was found to be related to the Si layer thickness d by E (eV) = 1.60+0.72d⁻² in accordance with a quantum confinement mechanism and the bulk amorphous-Si band gap.     

Roughness-enhanced reliability of MOS tunneling diodes

Both electrical and optical reliabilities of PMOS and NMOS tunneling diodes are enhanced by oxide roughness, prepared by very high vacuum prebake technology. For rough PMOS devices, as compared to flat PMOS devices, the Weibull plot of T_BD shows a 2.5-fold enhancement at 63% failure rate, while both the D₂ and H₂-treated flat PMOS devices show similar inferior reliability. For rough NMOS devices, as compared to flat NMOS devices, the Weibull plot of T_BD shows a 4.9-fold enhancement at 63% failure rate. The time evolutions of the light emission from rough PMOS and NMOS diodes degrade much less than those of flat PMOS and NMOS diodes. The momentum reduction perpendicular to the Si/SiO₂ interface by roughness scattering could possibly make it difficult to form defects in the bulk oxide and at the Si/SiO₂ interface by the impact of the energetic electrons and holes     

缺陷诱导光学薄膜光场增强损伤分析

高损伤阈值的光学薄膜是高功率激光系统的关键器件。众多研究显示,纳米量级的缺陷是光学薄膜激光损伤的主要诱因,是制约光学薄膜向高损伤阈值发展的主要因素。基于有限差分时域方法分析了纳米大小的缺陷诱导SiO₂光学薄膜的局部光场增强导致的激光损伤。结果显示:缺陷的存在使SiO₂单层薄膜的光场分布发生了变化,无缺陷的SiO₂薄膜峰值光场位于膜层表面,而有缺陷的SiO₂薄膜峰值光场位于缺陷与薄膜的边界处,光场增强了约2.3倍;同时缺陷诱导的光场局部增强不仅依赖于缺陷与膜层之间的相对折射率,而且也依赖于缺陷的大小、缺陷在膜层中的分布深度,以及入射激光波长。缺陷与膜层的相对折射率越大,缺陷的直径越大,缺陷在膜层中的深度越小,入射激光波长越短,光场增强越大。研究结果显示光学薄膜中纳米大小的缺陷诱导的光场增强不可忽视,在研究光学薄膜的激光损伤过程中应予以考虑。     

High Mobility Strained Ge pMOSFETs With High-κ/Metal Gate

Compressively strained Ge long channel ring-type pMOSFETs with high-kappa Si/SiO₂/HfO₂/TiN gate stacks are fabricated on Si_0.2Ge_0.8 virtual substrates. Effective oxide thickness is approximately 1.4 nm with low gate leakage current. A peak hole mobility of 640 cm²/ Vldrs and up to a four times enhancement over the Si/SiO₂ universal curve are observed. Parasitic conduction within the Si-cap layers degrades the mobility at large vertical fields, although up to a 2.5 times enhancement over universal remains at a field of 0.9 MV/cm.     

Broad-band amplification using a novel amplifier topology

A new broad-band amplifier topology that provides a continuous gain across 75 nm (1528-1603 nm) of optical bandwidth using Er³⁺ -doped SiO₂ fiber is demonstrated. The noise figure is low and does not present any discontinuity across the entire amplification bandwidth. The topology has a buried 1550/1585-nm splitter to reduce input signal loss and to provide amplified spontaneous emission suppression. The topology has been optimized using hybrid fiber; Er³⁺-doped SiO₂ for the first stage and Er ³⁺-doped TeO₂ for the second stage, achieving 82 nm (1526-1618 nm) of optical bandwidth     

Low-loss polyimide-Ta2O5-SiO2hybrid ARROW waveguides

A low-loss polyimide-Ta₂O₅-SiO₂ hybrid antiresonant reflecting optical waveguide (ARROW) is presented. The ARROW device was fabricated using both the organic and dielectric thin-film technologies. It consists of the fluorinated polyimide, tantalum pentoxide (Ta₂O₅), and silicon dioxide (SiO₂) hybrid layers deposited on a Si substrate. For transverse electric polarized light, the propagation loss of the waveguide as low as 0.4 dB/cm was obtained at 1.31 μm. The propagation loss for transverse magnetic polarized light is 1.5 dB/cm. An ARROW waveguide fabricated using the polyimide-Ta₂O₅ -polyimide material system is also presented for comparison