自旋阀多层膜[NiFe／Cu／Co／Cu]n的GMR效应研究

巨磁电阻（ＧＭＲ）硬盘磁头由于具有灵敏度高,稳定性好,巴克豪森噪音小等重大优点,使它在信息存储领域引起了一场新的革命。本文报道了一种自旋阀型多层膜「ＮｉＦｅ／Ｃｕ／Ｃｏ／Ｃｕ」ｎ的实验研究和理论分析。研究了工艺条件和多层膜结构对巨磁电阻疚的影响,勇于通过对制备条件的优化选择,在常温下得到巨磁阻系数为８％,饱和场强２６０Ｏｅ的优质自旋阀多层膜材料。     

Fe或Ni元素对Zr4Co4Si7晶体结构的影响

利用高分辨电子显微术结合计算机像模拟技术研究了Ｚｒ４Ｃｏ４Ｓｉ７的晶体结构。结果表明，Ｚｒ４Ｃｏ４Ｓｉ７（Ｚｒ４Ｃｏ４Ｇｅ７型）结构为体心四方点阵，点阵常数ａ＝１．２９３５ｎｍ，ｃ＝０．５０９０ｎｍ，空间群为Ｉ４／ｍｍｍ，用Ｆｅ或Ｎｉ元素置换Ｚｒ４Ｃｏ４Ｓｉ７结构中的部分Ｃｏ原子后，并不改变结构点阵类型及点阵中原子的配位关系，点阵常数变为：Ｚｒ４Ｃｏ４Ｓｉ７结构中的部分Ｃｏ原子后，并不改变结构点阵     

FeCuNbCrSiB/Cu/FeCuNbCrSiB薄膜各层宽度对其巨磁阻抗效应的影响

采用射频磁控溅射方法，利用微细加工工艺制备了不同薄膜宽度的三明治结构FeCuNbCrSiB／Cu／FeCuNbCrSiB多层膜，在频率1～40MHz下研究了薄膜宽度对多层膜的纵向和横向巨磁阻抗效应的影响。结果表明，三明治结构多层膜的巨磁阻抗效应随薄膜宽度的变化具有显著的影响，当FeCuNbCrSiB层、Cu层宽度分别取1．6rflrn、O．8rflrn时，GMI％达到最大值一21．22645％。     

宽带激光熔覆Ni-WC/Co复合涂层的组织及性能

采用自重送粉法,在４５钢 表面用宽带激光熔覆了Ｎｉ－ＷＣ／Ｃｏ 复合涂层．借助于扫描电镜、透射电镜、能谱仪、Ｘ射线衍射仪、显微硬度计和磨损试验机,对宽带激光熔覆Ｎｉ－ＷＣ／Ｃｏ复合涂层组织结构、显微硬度及干摩擦磨损特性进行了较为系统的研究． 研究结果表明,Ｎｉ－ＷＣ／Ｃｏ复合涂层熔覆区主要组成相为ＷＣ、Ｗ２Ｃ、ｒ－Ｎｉ、Ｍ２３（Ｃ,Ｂ）６及Ｍ７（Ｃ,Ｂ）３．熔覆区组织形貌及分布特征与 ＷＣ 颗粒含量有很大关系,特别是涂层内 ＷＣ体积分数增加至 ７０％时,有Ｍ３Ｃ２碳化物新相形成． 复合涂层内显微硬度沿层…     

脉冲激光淀积高电流密度的YBCO超导带材

采用脉冲激光加辅助离子源的方法在长为６．０ｃｍ的ＮｉＣｒ合金基带上制备０．１３μｍ厚的Ｙ－ＺｒＯ２（ＹＳＺ）隔离层，再用脉冲激光在ＹＳＺ／ＮｉＣｒ带上制备１．５μｍ厚的ＹＢａ２Ｃｕ３Ｏ７－ｘ超导厚膜形成ＹＢＣＯ／ＹＳＺ／ＮｉＣｒ超导带材。实验测得在７７Ｋ，０Ｔｅｓｌａ下其临界电流密度为８．７５×１０４Ａ／ｃｍ２，超导转变温度为８８．６Ｋ。     

高分辨电子显微像结合1000keV电子衍射测定"Pb"-1223的无公度调制结构

（Ｐｂ０．５Ｓｒ０．３Ｃｕ０．２）Ｓｒ２（Ｃａ０．６Ｓｒ０．４）２Ｃｕ３Ｏｙ（简称“Ｐｂ”－１２２３）是一维无公度调制结构［１］，超空间群是Ｐｍｍｍ（ν０１／２）［２］。其基本结构的晶胞参数ａ＝ｂ＝０．３８２ｎｍ，ｃ＝１．５３ｎｍ，调制波矢为：ｑ＝０...     

CoFeSiB/Cu/CoFeSiB多层膜的巨磁阻抗效应研究

利用射频磁控溅射技术及微细加工技术制备了三明治结构的CoFeSiB/Cu/CoFeSiB多层膜,在频率l～40MHz下研究了多层膜的纵向和横向巨磁阻抗效应,结果表明曲折状三明治结构多层膜的巨磁阻抗效应比单层膜有较大的提高。在交流电流频率5MHz,外加直流磁场100Oe下巨磁阻抗变化率达17.3%。     

Ni80F20／Cu基磁性多层 自旋阀的微结构

用高分辨电子显微学及平行电子能量损失谱方法研究了Ｎｉ８０ｅ２０／Ｃｕ基磁性多层膜和自旋阀的显微结构。高分辨像显示,磁性我层膜及自旋阀均具有沿薄膜生长方向的柱晶结构。Ｎｉ,Ｆｅ,Ｃｕ和Ｍｎ元素的成分分布图显示,柱晶内仍保持完整的层状结构。沿薄膜生长方向的自旋阀元素分布曲线分析表明,ＮｉＦｅ层中的Ｎｉ元素沿柱晶晶界向相邻Ｃｕ层扩散。讨论了这些低维磁电子学材料的显微结构对磁输运性能的影响。     

IC芯片凸点的制作与可靠性考核

用多种方法制作了Ａｕ凸点、Ｃｕ／Ａｕ凸点、Ｎｉ／Ａｕ凸点、Ｃｕ／Ｐｂ－Ｓｎ凸点及Ｃ４凸点微型Ａｕ凸点直径为１０μｍ,间距３０μｍ高度５～８μｍ,芯片上微凸点近１０００个,还对各种不同的制作方法进行了研究,并对芯片凸点的可靠性进行了一定的考核,效果良好。文中给出一组试验芯片的Ｃｕ／Ｐｂ－Ｓｎ凸点可靠性考核数据：经１２５℃,１０００ｈ电老化,其接触电阻变化范围为０．１％～０．７％,经－５５℃～＋１２５     

Co—Mn—Ni—Mg—Fe—O系材料的高温热稳定性

采用Ｃｏ－Ｍｎ－Ｎｉ－Ｍｇ－Ｏ系和Ｃｏ－Ｍｎ－Ｎｉ－Ｆｅ－Ｏ系这两种热处理电学特性相反的热敏材料进行复合得到Ｃｏ－Ｍｎ－Ｎｉ－Ｍｇ－Ｆｅ－Ｏ五元系材料，经热处理后电阻值的变化得到互补，使热敏电阻经高温热处理后稳定性有了很大的提高。     

Coupling Effect of the Interfacial Reaction in Co/Sn/Cu Diffusion Couples

Co/Sn/Cu sandwich couples formed by electroplating were examined to investigate the interaction between Cu and Co across the Sn layer for various Sn thicknesses from 75 μm to 580 μm. At the Sn/Cu interface, both Cu₆Sn₅ and Cu₃Sn are formed. Unlike in a binary Sn/Cu couple, Cu₆Sn₅ has a spiked structure for couples with a thinner Sn layer. At the Co/Sn interface, two phases, CoSn₃ and (Cu,Co)₆Sn₅, were simultaneously observed after reaction at 200°C. Remarkably, the CoSn₃ reaction layer was much thinner than that in the binary Sn/Co couple. Furthermore, only the (Cu,Co)₆Sn₅ phase was formed at 150°C. This finding indicates that CoSn₃ growth is significantly inhibited in Co/Sn/Cu sandwich couples due to the Cu substrate.     

Cu88Co12合金的巨磁电阻及其微结构的研究

本文利用场离子显微镜－原子探针及电镜研究了具有巨磁电阻效应的甩带Ｃｕ８８Ｃ ｏ１２合金的微结构。Ｃｕ８８Ｃｏ１２合金经４５０℃退火半小时后发邓有明显的巨磁电阻。     

NiCu/Cu多层纳米线微、纳结构及成份研究

采用双脉冲电化学沉积法,以多孔阳极氧化铝(AAO)为模板制备了NiCu/Cu多层纳米线。利用透射电子显微术研究其微/纳结构和成分。研究结果表明,单根NiCu/Cu纳米线尺寸均匀,平均直径为53 nm,系多晶面心立方(fcc)结构。STEM模式下EDS线扫描和EDS面分布显示多层纳米线呈现NiCu和Cu交替排列组成的多层结构,其NiCu层和Cu层的平均沉积速率分别为5 nm/s和2 nm/s。化学组分测量测定NiCu层原子比为Ni∶Cu=51∶49,Cu层为纯铜。并通过NiCu合金和Cu纳米线元素测定分析、验证了Ni和Cu的含量比例关系。利用HRTEM和CBED深入表征分析了非磁性层尺度小于10 nm的NiCu/Cu纳米线的磁性层、非磁性层和过渡层结构。     

Electroless deposition of Co(W) thin films

Thin films of cobalt that contain small amounts of tungsten [Co(W)] were deposited by the electroless process. Those films do not contain either phosphorus or boron which are included in most electroless cobalt films processes. The deposition bath for Co(W) thin films include Co ions, tungstate ions as a source for tungsten, di-methyl-amine-borane (DMAB) complex as a reducing agent, ammonium hydrate as a complexing agent, acetic acid for buffering and surfactants. Co(W) layers were deposited on two types of seed layers: (a) thin sputtered cobalt or copper films on 100 nm SiO₂/Si and (b) bare silicon wafers activated by an aqueous Pd/PdCl₂ solution. The deposited layer thickness range was 40–1000 nm with deposition rate at 90 °C and pH 9 of 7 nm/s for both Pd activated Si and sputtered Co seed, and 5 nm/s for the sputtered Cu seed. Lowering the temperature to 70 °C lowered the deposition rate to 0.7 nm/s for the Pd activated Si. The deposited layers were bright coloured, uniform, and with low defect density under visual inspection. The thin films composition was found to be Cobalt with 3–4 at.% tungsten for all types of seed layers. The Co(W) thin films specific resistivity was in the range of 60–90 μΩ cm. Finally we present the thin film morphology as it was characterized using atomic force microscopy and scanning electron microscopy.     

Dependence of the transversal magneto-optic Kerr effect on the incidence angle of light for ultrathin films of cobalt and Co/Cu/Co multilayers

The transversal magneto-optic Kerr effect in thin cobalt films and Co/Cu/Co structures obtained by magnetron sputtering in the magnetic field is investigated. It is shown that the dependences of the TMOKE and reflection intensity on the incidence angle of light substantially vary upon varying the thickness of the cobalt layer from 6 to 0.7 nm. The theoretical evaluation of the obtained data in the context of the classic theory of propagation of light in the conducting medium is presented     

超细Co/Cu纳米多层膜磁性研究

利用磁控溅射方法制备了纳米Co/Cu多层膜。利用扫描探针显微镜(SPM)观测了其表面形貌和磁畴结构,并通过振动样品磁强计(VSM)测量了磁性。结果表明,薄膜的微结构和磁性随非磁性层厚度的变化有着非常显著的变化。超细Co颗粒构造的多层膜样品,颗粒尺寸逐渐增大,磁畴尺寸先减小后增大,最后发生明显的聚集。磁性金属和非磁性金属的比例对多层膜之间的交换耦合相互作用有显著影响。平行膜面方向上的饱和场明显小于垂直膜面方向。当体积比约为1∶80时,平行膜面方向饱和场为95.9 kA/m,垂直方向饱和场为328.1 kA/m。此时两个方向上的饱和场、剩磁、矫顽力和磁滞损耗均为最小值。     

Effect of Co permeation on spin polarized transport in a Co/organic semiconductor (OSC) structure

Co atoms will permeate into the soft organic material to form a magnetic permeated sublayer (MPS) during the fabrication of an organic spin device, such as Co/OSC/LSMO. We considered the OSC as a two-sublayer structure of MPS and pristine OSC, and then established a dynamic spin-diffusion equation to study the effect of MPS on the spin current polarization and the magnetoresistance of the device. It was found that the MPS will change the spin transport due to its different spin-flip time and mobility from that in the pristine OSC. The splitting of spin-flip times will be favorable to the spin polarization transport. Mobility of spin polarons in the MPS will be reduced due to the scattering of the Co atoms, which will weaken the spin polarization. For a given device, effect of the thickness of the MPS on the spin polarization is discussed. Finally, we calculated the magnetoresistance of a Co/OSC/LSMO device. A theoretical result which is consistent with the experimental data was obtained.     

Effect of Ni on the Formation of ${hbox {Cu}}_{6}{hbox {Sn}}_{5}$ and ${hbox {Cu}}_{3}{hbox {Sn}}$ Intermetallics

In this paper, the effect of Ni on the formation of Cu₆Sn₅ and Cu₃Sn intermetallics between tin and (Cu,Ni) substrates has been studied by making use of the thermodynamic assessment of the Sn-Cu-Ni system. The driving forces for the diffusion of the elements in the intermetallic layers were calculated as a function of Ni content. Assuming constant mobilities of component atoms, the results suggest that the diffusion fluxes of all the components in the (Cu, Ni)₆Sn₅ layer increase with increasing content of dissolved Ni, while the Cu and Sn fluxes in the (Cu, Ni)₃Sn layer decrease. Therefore, the dissolution of Ni retards the growth of (Cu, Ni)₃Sn. When the Ni content of the (Cu,Ni) substrate is high enough, the intermetallic compound growth in the reaction zones is dominated by (Cu, Ni)₆Sn₅, and the (Cu, Ni)₃Sn layer disappears gradually. The small thickness of (Cu, Ni)₃Sn is associated with large difference between Sn and Cu fluxes in (Cu, Ni)₃Sn that encourages also the "Kirk-endall void" formation. In addition, the calculated driving forces suggest that the growth rate of (Cu, Ni)₆Sn₅ should further increase if (Cu, Ni)₃Sn disappears, resulting in an unusually thick (Cu, Ni)₆Sn₅ layer. The results of thermodynamic calculations supplemented with diffusion kinetic considerations are in good agreements with recent experimental observations.     

CMP工艺对Co/Cu去除速率及速率选择比的影响研究

化学机械抛光(CMP)工艺中,选用了固定的抛光液组分,即3%体积百分比的FA/O型螯合剂、3%体积百分比的FA/O I型非离子表面活性剂、5% SiO₂。首先研究了不同抛光工艺参数,包括抛光压力、抛光头/抛光盘转速、抛光液流量等,对Co/Cu去除速率及选择比的作用机理。然后采用4因素、3水平的正交试验方法对抛光工艺进行优化实验,得到了较佳的工艺参数。在抛光压力为13.79 kPa、抛光头/抛光盘转速为87/93 r/min、抛光液流速为300 mL/min的条件下,Co/Cu的去除速率选择比为3.26,Co和Cu的粗糙度分别为2.01 、1.64 nm。     

Time resolved study on Co/Ni/a-Si phase transition during isothermal annealing at 400 °C

An approach based on in situ sheet resistance analyses during isothermal annealing processes is proposed to find out the critical stages of Co/Ni phase transition on amorphous silicon. Unlike the case of conventional Co/Si systems, it was found that Co/Ni/Si reaction produces a double-peak in the resistance versus time curve. This behaviour was studied by energy filtered transmission electron microscopy (EFTEM), energy dispersive X-ray spectroscopy (EDS) and selected area electron diffraction (SAED) analyses. It was found that cobalt atoms prefer to diffuse through the grain boundaries of the underlying Ni₂Si layer that forms at very low temperature in contact with silicon. The diffusion process stops when cobalt atoms reach the deeper NiSi layer which is located at the interface with the substrate. Finally, CoSi and NiSi phases form separately, and Co(Ni)Si₂ grains nucleate in contact with silicon differently from what is known for thick layer systems.