Intermetallic reactions in reflowed and aged Sn-9Zn solder ball grid array packages with Au/Ni/Cu and Ag/Cu pads

During the reflowing of Sn-9Zn solder ball grid array (BGA) packages with Au/Ni/Cu and Ag/Cu pads, the surface-finished Au and Ag film dissolved rapidly and reacted with the Sn-9Zn solder to form a γ₃-AuZn₄/γ-Au₇Zn₁₈ intermetallic double layer and ε-AgZn₆ intermetallic scallops, respectively. The growth of γ₃-AuZn₄ is prompted by further aging at 100°C through the reaction of γ-Au₇Zn₁₈ with the Zn atoms dissolved from the Zn-rich precipitates embedded in the β-Sn matrix of Sn-9Zn solder BGA with Au/Ni/Cu pads. No intermetallic compounds can be observed at the solder/pad interface of the Sn-9Zn BGA specimens aged at 100°C. However, after aging at 150°C, a Ni₄Zn₂₁ intermetallic layer is formed at the interface between Sn-9Zn solder and Ni/Cu pads. Aging the immersion Ag packages at 100°C and 150°C caused a γ-Cu₅Zn₈ intermetallic layer to appear between ε-AgZn₆ intermetallics and the Cu pad. The scallop-shaped ε-AgZn₆ intermetallics were found to detach from the γ-Cu₅Zn₈ layer and float into the solder ball. Accompanied with the intermetallic reactions during the aging process of reflowed Sn-9Zn solder BGA packages with Au/Ni/Cu and Ag/Cu pads, their ball shear strengths degrade from 8.6 N and 4.8 N to about 7.2 N and 2.9 N, respectively.     

Intermetallic reactions in Sn-8Zn-20In solder ball grid array packages with Au/Ni/Cu and Ag/Cu pads

During the reflow process of Sn-8Zn-20In solder joints in the ball grid array (BGA) packages with Au/Ni/Cu and Ag/Cu pads, the Au and Ag thin films react with liquid solder to form γ₃-AuZn₄/γ-Au₇Zn₁₈ and ε-AgZn₆ intermetallics, respectively. The γ₃/γ intermetallic layer is prone to floating away from the solder/Ni interface, and the appearance of any interfacial intermetallics cannot be observed in the Au/Ni surface finished Sn-8Zn-20In packages during further aging treatments at 75°C and 115°C. In contrast, ε-CuZn₅/γ-Cu₅Zn₈ intermetallics are formed at the aged Sn-8Zn-20In/Cu interface of the immersion Ag BGA packages. Bonding strengths of 3.8N and 4.0N are found in the reflowed Sn-8Zn-20In solder joints with Au/Ni/Cu and Ag/Cu pads, respectively. Aging at 75°C and 115°C gives slight increases of ball shear strength for both cases.     

Influence of interfacial reaction layer on reliability of chip-scale package joint from using Sn-37Pb and Sn-8Zn-3Bi solder

The microstructure of Sn-37Pb and Sn-8Zn-3Bi solders and the full strength of these solders with an Au/Ni/Cu pad under isothermal aging conditions were investigated. The full strengths tended to decrease as the aging temperature and time increased, regardless of the properties of the solders. The Sn-8Zn-3Bi had higher full strength than Sn-37Pb. In the Sn-37Pb solder, Ni₃Sn₄ compounds and irregular-shaped Pb-rich phase were embedded in a β-Sn matrix. The Ni₃Sn₄ compounds were observed at the interface between the solder and pad. The microstructure of the as-reflowed Sn-8Zn-3Bi solder mainly consists of the β-Sn matrix scattered with Zn-rich phase. Zinc first reacted with Au and then was transformed to the AuZn compound. With aging, Ni₅Zn₂₁ compounds were formed at the Ni layer. Finally, a Ni₅Zn₂₁ phase, divided into three layers, was formed with column-shaped grains, and the thicknesses of the layers were changed.     

The adhesion strength of A lead-free solder hot-dipped on copper substrate

Eutectic Sn-Zn-Al solder alloy was used [composition: 91Sn-9(5Al-Zn)] to investigate the effects of dipping parameters such as the temperature, rate and time dipping on the adhesion strength between solder and substrate using dimethylammonium chloride (DMAHCl) flux. The optimum conditions for the highest adhesion strength (about 8 MPa) were determined as dipping at 350°C, and a rate of 10.8∼11.8 mm/s for 5∼7.5 min. A poor solder coating was obtained as dipped at 250°C. Some defects by non-wetting were found as dipped at a slow rate (slower than 8.2 mm/s). Quite different from the most tin-based solders for copper substrate, γ-Cu₅Zn₈ intermetallic compound particles were found by x-ray diffraction (XRD) analysis at the interface of solder and substrate as dipped at 300°C after pull-off test by etching out the unreacted solder layer. The morphology of the intermetallic compound formed was observed by scanning electron microscopy (SEM). The elements of Al (near Cu), Zn (near Sn) are enriched at the interface of solder and copper substrate as determined by the line scanning and mapping analysis.     

Inhibiting the formation of (Au1−xNix)Sn4 and reducing the consumption of Ni metallization in solder joints

The effects of adding a small amount of Cu into eutectic PbSn solder on the interfacial reaction between the solder and the Au/Ni/Cu metallization were studied. Solder balls of two different compositions, 37Pb-63Sn (wt.%) and 36.8Pb-62.7Sn-0.5Cu, were used. The Au layer (1 ± 0.2 μm) and Ni layer (7 ± 1 μm) in the Au/Ni/Cu metallization were deposited by electroplating. After reflow, the solder joints were aged at 160°C for times ranging from 0 h to 2,000 h. For solder joints without Cu added (37Pb-63Sn), a thick layer of (Au_1−xNi_x)Sn₄ was deposited over the Ni₃Sn₄ layer after the aging. This thick layer of (Au_1−xNi_x)Sn₄ can severely weaken the solder joints. However, the addition of 0.5wt.%Cu (36.8Pb-62.7Sn-0.5Cu) completely inhibited the deposition of the (Au_1−xNi_x)Sn₄ layer. Only a layer of (Cu_1-p-qAu_pNi_q)₆Sn₅ formed at the interface of the Cu-doped solder joints. Moreover, it was discovered that the formation of (Cu_1-p-qAu_pNi_q)₆Sn₅ significantly reduced the consumption rate of the Ni layer. This reduction in Ni consumption suggests that a thinner Ni layer can be used in Cu-doped solder joints. Rationalizations for these effects are presented in this paper.     

Interfacial reaction and microstructural evolution for electroplated Ni and electroless Ni in the under bump metallurgy with 42Sn58Bi solder during annealing

In the present study, several under bump metallization (UBM) schemes using either electroplated Ni or electroless Ni (EN) as the solderable layer are investigated. The EN and electroplated Ni are first deposited on Cu/Al₂O₃ substrates, followed by electroplating of thin gold coatings. Joints of 42Sn-58Bi/Au/EN/Cu/Al₂O₃ and 42Sn-58Bi/Au/Ni/Cu/Al₂O₃ are annealed at 145 C and 185CC for 30–180 minutes to investigate the interfacial reaction between the solder and metallized substrates. For 42Sn-58Bi/Au/Ni-5.5wt.%P/Cu/Al₂O₃, 42Sn-58Bi/Au/Ni-12.1wt.%P/Cu/Al₂O₃, and 42Sn-58Bi/Au/Ni/CU/Al₂O₃ joints annealed at 145 C, only Ni₃Sn₄ intermetallic compound (IMC) formed at the solder/EN interace. When annealed at an elevated temperature of 185 C, plate-like Ni₃Sn₄ IMC forms at the solder/Ni-5.5wt.%P interface, while a trace of (Ni, Cu)₃Sn₄ IMC is observed at the solder/Ni-12.1wt.%P interface and within the solder region. For the electroplated Ni-based multi-metallization substrate, the Ni₃Sn₄ IMC is present at the solder/Ni interface during annealing at 185 C for a short period of time. In the 42Sn-58Bi/Au/EN/Cu/Al₂O₃ joint, the EN spalls off the EN layer and migrates into the solder region when annealed at 185 C. The interface of the solder/electroplating Ni becomes saw-toothed as the annealing temperature is raised to 185 C. In addition, an enrichment of phosphorus is observed at the interface of the Ni-Sn IMC and EN.     

elemental redistribution and interfacial reaction mechanism for the flip chip Sn-3.0Ag-(0.5 or 1.5)Cu solder bump with Al/Ni(V)/Cu under-Bump metallization during aging

In flip chip technology, Al/Ni(V)/Cu under-bump metallization (UBM) is currently applicable for Pb-free solder, and Sn−Ag−Cu solder is a promising candidate to replace the conventional Sn−Pb solder. In this study, Sn-3.0Ag-(0.5 or 1.5)Cu solder bumps with Al/Ni(V)/Cu UBM after assembly and aging at 150°C were employed to investigate the elemental redistribution, and reaction mechanism between solders and UBMs. During assembly, the Cu layer in the Sn-3.0Ag-0.5Cu joint was completely dissolved into solders, while Ni(V) layer was dissolved and reacted with solders to form (Cu_1−y,Ni_y)₆Sn₅ intermetallic compound (IMC). The (Cu_1−y,Ni_y)₆Sn₅ IMC gradually grew with the rate constant of 4.63 × 10⁻⁸ cm/sec^0.5 before 500 h aging had passed. After 500 h aging, the (Cu_1−y,Ni_y)₆Sn₅ IMC dissolved with aging time. In contrast, for the Sn-3.0Ag-1.5Cu joint, only fractions of Cu layer were dissolved during assembly, and the remaining Cu layer reacted with solders to form Cu₆Sn₅ IMC. It was revealed that Ni in the Ni(V) layer was incorporated into the Cu₆Sn₅ IMC through slow solid-state diffusion, with most of the Ni(V) layer preserved. During the period of 2,000 h aging, the growth rate constant of (Cu_1−y,Ni_y)₆Sn₅ IMC was down to 1.74 × 10⁻⁸ cm/sec^0.5 in, the Sn-3.0Ag-1.5Cu joints. On the basis of metallurgical interaction, IMC morphology evolution, growth behavior of IMC, and Sn−Ag−Cu ternary isotherm, the interfacial reaction mechanism between Sn-3.0Ag-(0.5 or 1.5)Cu solder bump and Al/Ni(V)/Cu UBM was discussed and proposed.     

The formation and growth of intermetallic compounds and shear strength at Sn–Zn solder/Au–Ni–Cu interfaces

The microstructures and shear strength of the interface between Sn–Zn lead-free solders and Au/Ni/Cu interface under thermal aging conditions was investigated. The intermetallic compounds (IMCs) at the interface between Sn–Zn solders and Au/Ni/Cu interface were analyzed by field emission scanning electron microscopy and transmission electron microscopy. The results showed the decrease in the shear strength of the interface with aging time and temperature. The solder ball with highly activated flux had about 8.2% increased shear strength than that with BGA/CSP flux. Imperfect wetting and many voids were observed in the fracture surface of the latter flux. The decreased shear strength was influenced by IMC growth and Zn grain coarsening. In the solder layer, Zn reacted with Au and then was transformed to the β-AuZn compound. Although AuZn grew first, three diffusion layers of γ-Ni₅Zn₂₁ compounds were formed after aging for 600 h at 150 °C. The layers divided by Ni₅Zn₂₁ (1), (2), and (3) were formed with the thickness of 0.7 μm, 4 μm, and 2 μm, respectively.     

Inhibiting AuSn<Subscript>4</Subscript> Formation by Controlling the Interfacial Reaction in Solder Joints

Au was used in an electronic package to protect the conductor from oxidation. However, Au dissolved into solders and reacted with the Sn-rich phase to form AuSn₄ during soldering. After aging, Au diffused from AuSn₄ toward the solder/metallization interface. If Ni₃Sn₄ formed at the soldering interface, a layer of AuSn₄ was redeposited on Ni₃Sn₄. In contrast, Au diffused into Cu₆Sn₅-based intermetallic compounds (IMCs) to produce either (Cu,Au)₆Sn₅ or (Cu,Ni,Au)₆Sn₅, while Cu₆Sn₅ or (Cu,Ni)₆Sn₅ was formed at the soldering interface. Gibbs free energy evaluation revealed that both (Ni,Au)₃Sn₄ and (Cu,Au)₆Sn₅ were more thermodynamically stable than AuSn₄. The maximum amount of Au diffused in Ni₃Sn₄ was 4.6 at.%, while the maximum dissolution of Au in Cu₆Sn₅ was 24.3 at.% at 150°C. Thus, dissolution of Au in Ni₃Sn₄ was limited, and residual Au rereacted with Sn to produce the layer-type AuSn₄. If Cu₆Sn₅ formed at the interface, most of the Au in AuSn₄ diffused into Cu₆Sn₅. Consequently, AuSn₄ formation could be inhibited by controlling formation of Cu₆Sn₅ in solder/under-bump metallization (UBM) assemblies.     

The microstructure characterization of ultrasmall eutectic Bi-Sn solder bumps on Au/Cu/Ti and Au/Ni/Ti under-bump metallization

The microstructure of the ultrasmall eutectic Bi-Sn solder bumps on Au/Cu/Ti and Au/Ni/Ti under-bump metallizations (UBMs) was investigated as a function of cooling rate. The ultrasmall eutectic Bi-Sn solder bump, about 50 μm in diameter, was fabricated by using the lift-off method and reflowed at various cooling rates using the rapid thermal annealing system. The microstructure of the solder bump was observed using a backscattered electron (BSE) image and the intermetallic compound was identified using energy dispersive spectroscopy (EDS) and an x-ray diffractometer (XRD). The Bi facet was found at the surface of the ultrasmall Bi-Sn solder bumps on the Au/Cu/Ti UBM in almost all specimens, and the interior microstructure of the bumps was changed with the solidification rate. The faceted and polygonal intermetallic compound was found in the case of the Bi-Sn solder bump on the Au (0.1 μm)/Ni/Ti UBM, and it was confirmed to be the (Au_1−x−yBi_xNi_y)Sn₂ phase by XRD. The intermetallic compounds grown form the Au (0.1 μm)/Ni/Ti UBM interface, and they interrupted the growth of Bi and Sn phases throughout the solder bump. The ultrasmall eutectic Bi-Sn solder bumps on the Au (0.025 μm)/Ni/Ti UBM showed similar microstructures to those on the Au/Cu/Ti UBM.     

Influence of Cu content on compound formation near the chip side for the flip-chip Sn-3.0Ag-(0.5 or 1.5)Cu solder bump during aging

Sn-Ag-Cu solder is a promising candidate to replace conventional Sn-Pb solder. Interfacial reactions for the flip-chip Sn-3.0Ag-(0.5 or 1.5)Cu solder joints were investigated after aging at 150°C. The under bump metallization (UBM) for the Sn-3.0Ag-(0.5 or 1.5)Cu solders on the chip side was an Al/Ni(V)/Cu thin film, while the bond pad for the Sn-3.0Ag-0.5Cu solder on the plastic substrate side was Cu/electroless Ni/immersion Au. In the Sn-3.0Ag-0.5Cu joint, the Cu layer at the chip side dissolved completely into the solder, and the Ni(V) layer dissolved and reacted with the solder to form a (Cu_1−y,Ni_y)₆Sn₅ intermetallic compound (IMC). For the Sn-3.0Ag-1.5Cu joint, only a portion of the Cu layer dissolved, and the remaining Cu layer reacted with solder to form Cu₆Sn₅ IMC. The Ni in Ni(V) layer was incorporated into the Cu₆Sn₅ IMC through slow solid-state diffusion, with most of the Ni(V) layer preserved. At the plastic substrate side, three interfacial products, (Cu_1−y,Ni_y)₆Sn₅, (Ni_1−x,Cu_x)₃Sn₄, and a P-rich layer, were observed between the solder and the EN layer in both Sn-Ag-Cu joints. The interfacial reaction near the chip side could be related to the Cu concentration in the solder joint. In addition, evolution of the diffusion path near the chip side in Sn-Ag-Cu joints during aging is also discussed herein.     

Intermetallic Reactions in Sn-0.4Co-0.7Cu Solder BGA Packages with an ENIG Surface Finish

As-cast Sn-0.4Co-0.7Cu solder contains both (Cu_0.98Co_0.02)₆Sn₅ and (Co_0.85Cu_0.15) Sn₃ intermetallic phases in the matrix. After reflowing, the Au thin film in the electroless Ni/immersion Au (ENIG) surface-finished Sn-0.4Co-0.7Cu solder ball grid array (BGA) packages dissolved rapidly into the solder matrix to form AuSn₄ intermetallics, and a thin layer of (Cu_0.57Ni_0.35Au_0.08)₆Sn₅ intermetallic compound appeared at the solder/pad interface, growing very slowly during aging at 100°C. Increasing the aging temperature to 150°C caused the formation of a new intermetallic layer, (Ni_0.79Cu_0.21)₃Sn₄, at the (Cu_0.57Ni_0.35Au_0.08)₆Sn₅/Ni interface. The reflowed Sn-0.4Co-0.7Cu BGA packages have a ball shear strength of 6.8 N, which decreases to about 5.7 N and 5.5 N after aging at 100°C and 150°C, respectively. The reflowed and aged solder joints fractured across the solder balls with ductile characteristics in ball shear tests.     

Electromigration effect on intermetallic growth and Young’s modulus in SAC solder joint

Solid-state intermetallic compound (IMC) growth behavior plays and important role in solder joint reliability of electronic packaging assemblies. The directional impact of electromigration (EM) on the growth of interfacial IMCs in Ni/SAC/Ni, Cu/SAC/Ni single BGA ball solder joint, and fine pitch ball-grid-array (FPBGA) at the anode and cathode sides is reported in this study. When the solder joint was subjected to a current density of 5,000 A/cm² at 125°C or 150°C, IMC layer growth on the anode interface was faster than that on the cathode interface, and both were faster than isothermal aging due to the Joule heating effect. The EM affects the IMC growth rate, as well as the composition and mechanical properties. The Young’s modulus and hardness were measured by the nanoindentation continuous stiffness measurement (CSM) from planar IMC surfaces after EM exposure. Different values were observed at the anode and cathode. The energy-dispersive x-ray (EDX) line scan analysis was conducted at the interface from the cathode to anode to study the presence of species; Ni was found in the anode IMC at SAC/Cu in the Ni/SAC/Cu joint, but not detected when the current was reverse. Electron-probe microanalysis (EPMA) measurement on the Ni/SAC/Ni specimen also confirmed the polarized Ni and Cu distributions in cathode and anode IMCs, which were (Ni_0.57Cu_0.43)₃Sn₄ and (Cu_0.73Ni_0.27)₆Sn₅, respectively. Thus, the Young’s moduli of the IMC are 141 and 175 GPa, respectively.     

The effect of intermetallic compound morphology on Cu diffusion in Sn-Ag and Sn-Pb solder bump on the Ni/Cu Under-bump metallization

The eutectic Sn-Ag solder alloy is one of the candidates for the Pb-free solder, and Sn-Pb solder alloys are still widely used in today’s electronic packages. In this tudy, the interfacial reaction in the eutectic Sn-Ag and Sn-Pb solder joints was investigated with an assembly of a solder/Ni/Cu/Ti/Si₃N₄/Si multilayer structures. In the Sn-3.5Ag solder joints reflowed at 260°C, only the (Ni_1−x,Cu_x)₃Sn₄ intermetallic compound (IMC) formed at the solder/Ni interface. For the Sn-37Pb solder reflowed at 225°C for one to ten cycles, only the (Ni_1−x,Cu_x)₃Sn₄ IMC formed between the solder and the Ni/Cu under-bump metallization (UBM). Nevertheless, the (Cu_1−y,Ni_y)₆Sn₅ IMC was observed in joints reflowed at 245°C after five cycles and at 265°C after three cycles. With the aid of microstructure evolution, quantitative analysis, and elemental distribution between the solder and Ni/Cu UBM, it was revealed that Cu content in the solder near the solder/IMC interface played an important role in the formation of the (Cu_1−y,Ni_y)₆Sn₅ IMC. In addition, the diffusion behavior of Cu in eutectic Sn-Ag and Sn-Pb solders with the Ni/Cu UBM were probed and discussed. The atomic flux of Cu diffused through Ni was evaluated by detailed quantitative analysis in an electron probe microanalyzer (EPMA). During reflow, the atomic flux of Cu was on the order of 10¹⁶−10¹⁷ atoms/cm²sec in both the eutectic Sn-Ag and Sn-Pb systems.     

Interfacial reaction between Sn-0.7Cu (-Ni) solder and Cu substrate

The interfacial reaction between Sn-0.7mass%Cu-(Ni) solders and a Cu substrate was investigated to reveal the effect of the addition of Ni to Sn-Cu solder on the formation of intermetallic compounds (IMCs). Sn-0.7Cu-xNi solders (x=0, 0.05, 0.1, 0.2 mass%) were prepared. For the reflow process, specimens were heated in a radiation furnace at 523 K for 60 sec, 300 sec, and 720 sec to estimate the interfacial reaction between the molten solder and Cu substrate. Then, for the aging process, some specimens were heat-treated in an oil bath at 423 K for 168 h and 504 h. The cross sections of soldered specimens were observed to measure the dissolution thickness of the Cu substrate and the thickness of the IMC and to investigate the microstructures of IMC. The results showed that, just after the reflow process, the dissolution thickness of the Cu substrate increased with the increase of Ni content in the Sn-0.7Cu-xNi solder and the thickness of the IMC between the solder and Cu substrate was the minimum in the Sn-0.7Cu-0.05Ni solder. After the aging process, the IMC grew with the increase of aging time. In the case of 0.05% Ni, the IMC thickness was the thinnest regardless of aging time. It is clear that 0.05% Ni addition to Sn-0.7Cu solder very effectively inhibits the formation and growth of the IMC between solder and Cu substrate. Electron probe microanalysis of the IMC showed that the IMC layer in the Sn-0.7Cu-Ni solder contained Ni, and the IMC was expressed as (Cu_1−y ,Ni _y )₆Sn₅.     

Compound formation for electroplated Ni and electroless Ni in the under-bump metallurgy with Sn-58Bi solder during aging

The Ni-based under-bump metallurgies (UBMs) are of interest because they have a slower reaction rate with Sn-rich solders compared to Cu-based UBMs. In this study, several UBM schemes using Ni as the diffusion barrier are investigated. Joints of Sn-58Bi/Au/electroless nickel (EN)/Cu/Al₂O₃ and Sn-58Bi/Au/electroplated nickel/Cu/Al₂O₃ were aged at 110°C and 130°C for 1–25 days to study the interfacial reaction and microstructural evolution. The Sn-Bi solder reacts with the Ni-based multimetallization and forms the ternary Sn-Ni-Bi intermetallic compound (IMC) during aging at 110°C. Compositions of ternary IMC were (78–80)at.%Sn-(12–16)at.%Ni-(5–8)at.%Bi in joints of Sn-58Bi/Au/Ni-5.5wt.%P/Cu, Sn-58Bi/Au/Ni-12wt.%P/Cu, and Sn-58Bi/Au/Ni/Cu. Elevated aging at 130°C accelerates the IMC growth rate and results in the formation of (Ni,Cu)₃Sn₄ and (Cu,Ni)₆Sn₅ adjacent to the ternary Sn-Ni-Bi IMC for the Sn-58Bi/Au/Ni-12wt.%P/Cu and Sn-58Bi/Au/Ni/Cu joints, respectively. The Cu content in the (Cu,Ni)₆Sn₅ IMC is six times that in (Ni,Cu)₃Sn₄. Electroplated Ni fails to prevent Cu diffusion toward the Ni/solder interface as compared to EN-based joints. Cracks are observed in the Sn-58Bi/Au/Ni-5.5wt.%P/Cu/Al₂O₃ joint aged at 130°C for 25 days. It is more favorable to employ Ni-12wt.%P for the Sn-58Bi/Au/EN/Cu joint. Electroless nickel, with the higher P content of 12 wt.%, is a more effective diffusion barrier during aging. In addition, P enrichment occurs near the interface of the EN/solder, and the degree of P enrichment is enhanced with aging time. The Au(Sn,Bi)₄, with pyramidal and cubic shape, is observed in the Sn-58Bi/Au/Ni/Cu/Al₂O₃ joint.     

Microstructure and shear strength evolution of Sn-Ag-Cu solder bumps during aging at different temperatures

Flip-chip devices with Sn-3.8Ag-0.7Cu solder on electroless Ni (EN) without immersion Au were studied after aging at different temperatures. The (Cu,Ni)₆Sn₅ intermetallics (IMCs) growth was volume diffusion controlled and Kirkendall voids were found in the Ni₃P layer even at the initial stage of high-temperature aging due to the faster diffusion of Ni in the Ni₃P layer via its column structure boundaries. The Ag₃Sn IMCs were distributed in the bulk solder, existing as plate- or lamella-like phases or as small particles around the β-Sn dendrites, and the (Cu,Ni)₆Sn₅ IMCs existed as facet-like phases. The plate- and lamella-like Ag₃Sn phases break up into small parts and these broken parts, together with small Ag₃Sn particles, coarsen into pebble-like phases during high-temperature aging. Shear tests showed that all the solder bumps fractured in the bulk solder. The shear strength of solder bumps decreases at the initial stage of aging at 150°C and 175°C, and the strength degradation during aging may be caused by the coarsening of small Ag₃Sn particles.     

Formation and resettlement of (AuxNi1−x)Sn4 in solder joints of ball-grid-array packages with the Au/Ni surface finish

The interfacial reactions between eutectic PbSn solder and the solder ball pads with the Au/Ni surface finish were studied. Solder joints subjected to up to three repeated reflow-and-aging treatments were examined. For the reflow, the peak reflow temperature was 225°C, and the reflow time was 115 s. Each aging process was performed at 160°C for 500 h. After the first reflow, all the Au would disappear from the interface, and formed many (Au_xNi_1−x)Sn₄ particles inside the solder joints. The value of x was between 0.99 and 0.75. In addition, there was a thin layer of Ni₃Sn₄ (1.4 μm) at the interface. After one reflow and one subsequent aging, most of the (Au_xNi_1−x)Sn₄ would relocate from inside the solder joint to the interface, and the value of x for (Au_xNi_1−x)Sn₄ at the interface decreased to 0.45. This (Au_xNi_1−x)Sn₄ resettlement process repeated itself for additional reflow-aging cycles. More reflow-aging treatments, however, made the microstructure of (Au_0.45Ni_0.55)Sn₄ at the interface become more non-planar. It was shown that gravitational effect was not the driving force for the resettlement of (Au_xNi_1−x)Sn₄. It is proposed that the driving force is for (Au_xNi_1−x)Sn₄ to seek Ni at the interface so that it can become more Ni-rich. In other words, the driving force is lowering the Gibbs energy of (Au_xNi_1−x)Sn₄ by dissolving more Ni. A decomposition-diffusion mechanism is proposed to explain what happened. Kinetic rationales for this rapid resettlement of (Au_xNi_1−x)Sn₄ at such a low temperature were also discussed.     

Reliability investigation and interfacial reaction of ball-grid-array packages using the lead-free Sn-Cu solder

The interfacial reactions between two Sn-Cu (Sn-0.7Cu and Sn-3Cu, wt.%) ball-grid-array (BGA) solders and the Au/Ni/Cu substrate by solid-state isothermal aging were examined at temperatures between 70°C and 170°C for 0 to 100 days. For the Sn-0.7Cu solder, a (Cu,Ni)₆Sn₅ layer was observed in the samples aged at 70–150°C. After isothermal aging at 170°C for 50 days, the solder/Ni interface exhibited a duplex structure of (Cu,Ni)₆Sn₅ and (Ni,Cu)₃Sn₄. For the Sn-3Cu solder, only the (Cu,Ni)₆Sn₅ layer was formed in all aged samples. Compared to these two Sn-Cu solders, the Cu content in the (Cu,Ni)₆Sn₅ layer formed at the interface increased with the Cu concentration in the Sn-xCu solders. And, the shear strength was measured to evaluate the effect of the interfacial reactions on the mechanical reliability as a function of aging conditions. The shear strength significantly decreased after aging for 1 day and then remained nearly unchanged by further prolonged aging. In all the samples, the fracture always occurred in the bulk solder. Also, we studied the electrical property of Cu/Sn-3Cu/Cu BGA packages with the number of reflows. The electrical resistivity increased with the number of reflows because of an increase of intermetallic compound (IMC) thickness.     

Sn-Zn-Al Pb-free solder—An inherent barrier solder for Cu contact

Flip chip solder bumps were produced on Cu contact applying Sn-9Zn-xAl Pb-free solder by dipping method. The solder bumps were tested under 85 C/85% RH (relative humidity) or at 150 C for 1000 hours to explore the shear strength and the interfacial interaction behavior. Experimental results revealed that Al and Zn, while not Sn, diffuse to the Cu/solder interface during the extended period test. A thin layer of Al_4.2Cu_3.2Zn_0.7 compound, characterized by XRD, was formed at the interface of the as-produced solder bump. This compound which resulted from the gathering of Al at the interface, provides a barrier to Sn diffusion toward Cu substrate and, thus, no Cu-Sn compound was detected. This is the first time to find a Sn-containing solder which, in contact with Cu, does not form Cu-Sn intermetallic compound during heat treatment and, thus, the Sn-Zn-Al solder is termed an inherent barrier solder.