Ag(TCNQ)纳米线的制备和场发射性能研究

采用气-液-固反应方法在硅片上制备了取向金属有机配合物Ag(TCNQ)纳米线.样品的XRD特征峰与Ag(TCNQ)相对应;SEM形貌显示纳米线几乎垂直基片生长,直径在50～300nm,长度在2～50μm.初步对其场发射性能进行了研究,所得Ag(TCNQ)纳米线的最低场发射开启电压约为1.5Vμm-1,最大发射电流密度约为0.03mAcm-2,此时对应的电场约为2.5Vpm-1.由测量所得I-Ⅴ曲线得到的FoWler-Nordheim(F-N)曲线近似为一条直线,说明样品具有场发射性能.重复实验表明,Ag(TCNQ)纳米线的场发射具有一定的稳定性.结合纳米线制备工艺,初步分析了场发射性能的影响因素.     

一种新型金属有机络合物Ag(TCNQ)纳米线的贮氢性能

采用真空饱和蒸气反应法制备了一种新型的金属有机络合物Ag(TCNQ)的纳米线阵列;首次应用石英晶体微量秤(QCM)的方法评价其贮氢性能,发现在常温常压下其重量贮氢量可达1.34%;推测其贮氢机理是由于Ag(TCNQ)疏松的晶体结构及纳米线阵列较大的比表面积.     

生长温度对热蒸发法制备ZnO纳米线的结构与发光性能影响

采用无金属催化剂的简单热蒸发法,在Si(100)衬底上不同生长温度下成功地制备了高密度和大长径比的单晶ZnO纳米线。分别利用X射线衍射仪(XRD)、扫描电子显微镜(SEM-EDS)、透射电子显微镜(TEM)及荧光光谱仪表征样品的结构和发光性质。XRD和TEM研究表明,所制备的样品为沿C轴择优取向生长的单晶ZnO纳米线,具有六方纤锌矿结构。SEM和TEM研究表明,生长温度对ZnO纳米线的形貌及长径比的影响较大。当生长温度为700℃时,制备得到长径比为300(长度约为15μm,直径约为50nm)的ZnO纳米线。低于600℃时,形成花状ZnO纳米锥或 纳 米 棒。高 于700℃时,形 成 小 长 径 比 的ZnO纳米棒。此外,室温光致发光(PL)谱上出现一个强而尖锐的紫外发射峰以及一个弱而宽泛的蓝光发射峰。采用的热蒸发法制备ZnO纳米线基于气-固(VS)生长机理且该生长方法可用于大规模、低成本制备高纯度的单晶ZnO纳米材料。     

生长温度对热蒸发法制备ZnO纳米线的结构与发光性能影响

采用无金属催化剂的简单热蒸发法,在Si(100)衬底上不同生长温度下成功地制备了高密度和大长径比的单晶ZnO纳米线。分别利用X射线衍射仪(XRD)、扫描电子显微镜(SEM-EDS)、透射电子显微镜(TEM)及荧光光谱仪表征样品的结构和发光性质。XRD和TEM研究表明,所制备的样品为沿c轴择优取向生长的单晶ZnO纳米线,具有六方纤锌矿结构。SEM和TEM研究表明,生长温度对ZnO纳米线的形貌及长径比的影响较大。当生长温度为700℃时,制备得到长径比为300(长度约为15μm,直径约为50nm)的ZnO纳米线;低于600℃时,形成花状ZnO纳米锥或纳米棒;高于700℃时,形成小长径比的ZnO纳米棒。此外,室温光致发光(PL)谱上出现一个强而尖锐的紫外发射峰以及一个弱而宽泛的蓝光发射峰。采用的热蒸发法制备ZnO纳米线基于气-固(VS)生长机理且该生长方法可用于大规模、低成本制备高纯度的单晶ZnO纳米材料。     

金属氧化物纳米线和纳米棒的制备及应用

本文综述了金属氧化物纳米线、纳米棒研究的新进展。重点评述了气相热化学合成法、热分解前驱物法、溶胶-凝胶电泳沉积法制备纳米线的过程及各自的生长机制，并对金属氧化物纳米线／棒的潜在应用作了介绍。     

用STM的纳米导电图形加工技术的研究

用STM针尖对有机络合物电双稳薄膜材料施加强电场作用 ,可在材料表面产生纳米线度的导电几何图形。实验证明 :对针尖本身的几何构形、施加在针尖上的脉冲幅度、周期和占空比都必须进行细致的选择。用Ag TCNQ络合物进行实验 ,在适合的针尖 样品距离下 ,发现所加脉冲偏压的极性为负时 ,容易进行加工     

用SPM纳米刻蚀方法在Ti表面制备纳米结构的研究

本文用导电原子力显微镜 (AFM)针尖诱导局域氧化反应的方法 ,在Ti膜表面制备了TiO2 纳米结构。实验结果表明 ,Ti膜的氧化阈值为 - 7伏 ,制备的TiO2 纳米线的最小线宽达到 10nm ,TiO2 纳米线的高度和宽度随针尖偏压的增大而增大。在优化的氧化刻蚀条件下 ,通过控制针尖偏压和扫描方式制备出了图形化的TiO2 结构 ,本研究表明基于导电AFM的纳米刻蚀技术将成为构筑纳米电子器件的重要工具     

SiO2纳米颗粒复合Bi2Te3纳米线阵列的制备

为结合一维纳米材料和纳米颗粒复合材料的优点,本文尝试进行了在氧化铝模板(AAO)中生长Bi2Te3-Si O2纳米颗粒复合纳米线阵列。通过在电化学溶液中添加Si O2纳米颗粒,制备包含纳米颗粒的Bi-Te纳米线阵列。应用XRD、SEM、TEM等方法对合成的样品进行了分析观察。研究发现Si O2纳米颗粒的加入对纳米线的形貌和结构都有明显的影响。在模板法沉积Bi2Te3纳米线阵列时,添加Si O2纳米颗粒将明显改变纳米线生长方式,Bi2Te3纳米线不再是等径的纳米棒,而是枝晶生长过程,最后形成Z字型的不断反复弯折纳米线,该枝晶状纳米线的直径远小于模板的孔径。这一新颖的现象为制备直径更小,并具备精细界面结构的纳米线热电材料提供了一种新的可能途径。     

针尖状SiC纳米线的合成与机理分析

采用热蒸发硅的方法,于1650℃反应不同的时间,在聚丙烯腈(PAN)碳纤维上原位生长碳化硅纳米线。通过X射线衍射,场发射扫描电镜及透射电子显微镜分析和观察,发现制得的产物为β-SiC单晶纳米线,具有明显的针尖状头部,且呈放射状生长在碳纤维上,形成试管刷状阵列。基于在反应不同阶段所得到产物的不同形貌,结合对制备条件和制备原料的分析,提出不同于传统VLS机理的VL’S机理。     

Se及Cu2Se纳米线的大面积合成及其纳米电子学器件性能

通过液相化学反应制备了高质硒(Se)纳米线,同时以Se纳米线为模板,合成了CuzSe纳米线.利用透射电镜(TEM)、高分辨透射电镜(HRTEM)以及X射线衍射仪(XRD)研究了纳米线的形貌结构特征.结果显示,Se纳米线为单晶结构,生长方向沿其[001]面.结合先进的光刻技术及磁控溅射,成功制备了Se和Cu2Se纳米电子学器件.初步测试表明,这种Se纳米线为P型半导体,而Cu2Se纳米线则表现出明显的相变行为.这些发现有利于开发纳米线场效应晶体管以及相变存储器件方面的应用.     

Ag-TCNQ薄膜电双稳态特性的XPS研究

本文采用X光电子谱仪 (XPS)研究了Ag TCNQ薄膜的电双稳态特性。对TCNQ粉末、热处理前后的TCNQ薄膜及Ag TCNQ薄膜作了分析。结果发现 ,真空蒸镀及大气环境中热处理不会引起TCNQ化学状态的变化 ,而热处理会促使Ag与TCNQ发生反应 ,薄膜电双稳态特性的优劣则与反应程度有关。最后讨论了这一现象的可能机理     

A chemically-responsive nanojunction within a silver nanowire

The formation of a nanometer-scale chemically responsive junction (CRJ) within a silver nanowire is described. A silver nanowire was first prepared on glass using the lithographically patterned nanowire electrodeposition method. A 1-5 nm gap was formed in this wire by electromigration. Finally, this gap was reconnected by applying a voltage ramp to the nanowire resulting in the formation of a resistive, ohmic CRJ. Exposure of this CRJ-containing nanowire to ammonia (NH(3)) induced a rapid (<30 s) and reversible resistance change that was as large as ΔR/R(0) = (+)138% in 7% NH(3) and observable down to 500 ppm NH(3). Exposure to water vapor produced a weaker resistance increase of ΔR/R(0,H(2)O) = (+)10-15% (for 2.3% water) while nitrogen dioxide (NO(2)) exposure induced a stronger concentration-normalized resistance decrease of ΔR/R(0,NO(2)) = (-)10-15% (for 500 ppm NO(2)). The proposed mechanism of the resistance response for a CRJ, supported by temperature-dependent measurements of the conductivity for CRJs and density functional theory calculations, is that semiconducting p-type Ag(x)O is formed within the CRJ and the binding of molecules to this Ag(x)O modulates its electrical resistance.     

Ag@Ni Core–Shell Nanowire Network for Robust Transparent Electrodes Against Oxidation and Sulfurization

Silver nanowire (Ag NW) based transparent electrodes are inherently unstable to moist and chemically reactive environment. A remarkable stability improvement of the Ag NW network film against oxidizing and sulfurizing environment by local electrodeposition of Ni along Ag NWs is reported. The optical transmittance and electrical resistance of the Ni deposited Ag NW network film can be easily controlled by adjusting the morphology and thickness of the Ni shell layer. The electrical conductivity of the Ag NW network film is increased by the Ni coating via welding between Ag NWs as well as additional conductive area for the electron transport by electrodeposited Ni layer. Moreover, the chemical resistance of Ag NWs against oxidation and sulfurization can be dramatically enhanced by the Ni shell layer electrodeposited along the Ag NWs, which provides the physical barrier against chemical reaction and diffusion as well as the cathodic protection from galvanic corrosion.     

单根Ag(TCNQ)微/纳米结构的光致变色特性研究

利用溶液化学反应法制备了准一维微/纳米结构的金属有机配合物Ag(TCNQ);X射线衍射(XRD)表明所制备的Ag(TCNQ)为晶态结构;扫描电子显微镜(SEM)的观察表明Ag(TCNQ)为准一维的微/纳米管或线.首先在自行研制的材料光学性能测试系统上对单根Ag(TCNQ)的光致变色特性进行测试,激光照射后颜色由深蓝变黄;然后利用显微Raman光谱仪对其光致变色机理进行了研究,激光照射后的光谱图中出现了明显的TCNQ分子的特征中性峰.如照射时间较长,超过30s,则TCNQ分子特征峰又消失.因此Raman测试结果证明单根Ag(TCNQ)微/纳米结构具有明显可逆的光致变色特性.     

Femtosecond laser irradiation induced heterojunctions between carbon nanofibers and silver nanowires for a flexible strain sensor

We report the direct joining of carbon nanofibers(CNFs)to silver nanowire(Ag NWs)by controlled irradiation with femtosecond(fs)laser pulses.Two separate types of nano-junction dependent on joint geometry,laser fluence and irradiation time are identified in irradiated mixtures.In one type of junction,the tip of an Ag NW is melted and flows to form a bond with an adjacent CNF.The second type of junction occurs without significant heating of the Ag NW and involves the softening and flow of carbon in the CNF in response to the transfer of plasmonic energy from the Ag NW into the CNF.Bonding in a T-type joint configuration can be of either kind depending on the relative orientation of the incident optical field and the long axis of the Ag NW.FDTD simulations were used to explore this effect for different joint geometries and laser polarization.The electrical properties of a heterojunction involving a single Ag NW-CNF structure have been measured,and it is found that the junction resistance can be reduced by six orders of magnitude after laser joining.Finally,we have investigated the properties of a strain sensor based on an Ag NW-CNF hybrid nanowire network and find that this device can exhibit high sensitivity.This sensitivity occurs as nano-junctions induced by fs laser irradiation greatly reduces the initial resistance.This laser-based technique for direct nanojoining of CNF and Ag NWs may enable the design of robust nanowire structures for application in a variety of new devices.     

K(TCNQ)薄膜的制备及其电双稳特性

在真空环境下,首次利用固态化学置换反应制备了K(TCNQ)薄膜,其分子结构与已报道过的K(TCNQ)单晶、多晶相同.但不同的是,在300K以上,K(TCNQ)薄膜具有可逆的双稳特性.因此预计在光电开关和电双稳存储器方面具有广泛的应用前景.     

Highly Reliable Ag Nanowire Flexible Transparent Electrode with Mechanically Welded Junctions

Deformation behavior of the Ag nanowire flexible transparent electrode under bending strain is studied and results in a novel approach for highly reliable Ag nanowire network with mechanically welded junctions. Bending fatigue tests up to 500 000 cycles are used to evaluate the in situ resistance change while imposing fixed, uniform bending strain. In the initial stages of bending cycles, the thermally annealed Ag nanowire networks show a reduction in fractional resistance followed by a transient and steady‐state increase at later stages of cycling. SEM analysis reveals that the initial reduction in resistance is caused by mechanical welding as a result of applied bending strain, and the increase in resistance at later stages of cycling is determined to be due to the failure at the thermally locked‐in junctions. Based on the observations from this study, a new methodology for highly reliable Ag nanowire network is proposed: formation of Ag nanowire networks with no prior thermal annealing but localized junction formation through simple application of mechanical bending strain. The non‐annealed, mechanically welded Ag nanowire network shows significantly enhanced cyclic reliability with essentially 0% increase in resistance due to effective formation of localized wire‐to‐wire contact.     

有机纳米整流器的STM研究

金属有机络合物Ag TCNQ的薄膜在STM针尖电场的作用下 ,当电压达到某一阈值后可以从高阻态跃迁至低阻态。在一定的条件下 ,在低阻态的保持时间很短 ,且高低阻态间的转换可以重复。由于它们都是有机材料 ,根据这种特性 ,提出了一种新型有机纳米整流器的设想 ,并成功地制作了输出可控的有机纳米整流器的原型。     

基于Ag(TCNQ)热透镜效应的全光型开关

Ag(TCNQ)是一种电荷转移型金属有机络合物。用真空蒸发与真空热压相结合的方法使它分散到PMMA ,PHPMA ,PC等高分子树脂中 ,制成了不含任何有机溶剂的透明光学薄膜 ,并证实了它具有光热透镜效应。