SnAgCu焊点电迁移诱发IMC阴极异常堆积

为了研究电迁移过程中焊点与焊盘界面金属问化合物(IMC)的变化,在28℃下,对无铅Sn3.0Ag0.5Cu焊点进行了6.5A直流电下的电迁移实验.结果发现,通电144h后,阳极侧IMC层变厚,平均达到10.12 μm;阴极侧IMC层大部分区域变薄至0.86μm,局部出现Cu焊盘的溶解消失,但在界面边缘处出现Cu3Sn5...     

典型Sn基焊料凸点互连结构电迁移异同性

研究了Sn37Pb,Sn3.0Ag0.5Cu和Sn0.7Cu三种焊料BGA焊点在电迁移作用下界面的微观组织结构.在60℃,1×103 A/cm2电流密度条件下通电187h后,Sn37 Pb焊点阴极界面已经出现了空洞,同时在阳极有Pb的富集带;Sn3.0Ag0.5Cu焊点的阴极界面Cu基体大量溶解,阳极金属间化合物层明显比阴极厚;对于Sn0.7Cu焊料,仅发现阳极金属间化合物层厚度比阴极厚,阴极Cu基体的溶解不如SnAgCu明显,电迁移破坏明显滞后.     

典型Sn基焊料凸点互连结构电迁移异同性

研究了Sn37Pb,Sn3.0Ag0.5Cu和Sn0.7Cu三种焊料BGA焊点在电迁移作用下界面的微观组织结构.在60℃,1×103 A/cm2电流密度条件下通电187h后,Sn37 Pb焊点阴极界面已经出现了空洞,同时在阳极有Pb的富集带;Sn3.0Ag0.5Cu焊点的阴极界面Cu基体大量溶解,阳极金属间化合物层明显比阴极厚;对于Sn0.7Cu焊料,仅发现阳极金属间化合物层厚度比阴极厚,阴极Cu基体的溶解不如SnAgCu明显,电迁移破坏明显滞后.     

凸点材料的选择对器件疲劳特性的影响

为了研究凸点材料对器件疲劳特性的影响,采用非线性有限元分析方法、统一型黏塑性本构方程和Coffin-Manson修正方程,对Sn3.0Ag0.5Cu,Sn63Pb37和Pb90Sn10三种凸点材料倒装焊器件的热疲劳特性进行了系统研究,对三种凸点的疲劳寿命进行了预测,并对Sn3.0Ag0.5Cu和Pb90Sn10两种凸点材料倒装焊器件进行了温度循环试验.结果表明,仿真结果与试验结果基本吻合.在热循环过程中,凸点阵列中距离器件中心最远的焊点,应力和应变变化最剧烈,需重点关注这些危险焊点的可靠性;含铅凸点的热疲劳特性较无铅凸点更好,更适合应用于高可靠的场合;而且随着铅含量的增加,凸点的热疲劳特性越好,疲劳寿命越长.     

Sb掺杂对SnAgCu无铅焊点电迁移可靠性的影响

向Sn3.8Ag0.7Cu无铅焊膏中添加质量分数为1%的Sb金属粉末,研究了其焊点在电流密度为0.34×104A/cm2、环境温度150℃下的电迁移行为。通电245h后,阴极处钎料基体与Cu6Sn5IMC之间出现一条平均宽度为16.9μm的裂纹,阳极界面出现凸起带,钎料基体内部也产生了裂纹。结果表明:1%Sb的添加使焊点形成了SnSb脆性相,在高电流密度和高温环境下产生裂纹,缩短了焊点寿命,降低了电迁移可靠性。     

无铅焊点在热疲劳和电迁移作用下的组织演变

研究了Cu/Sn-58Bi/Cu焊点接头在室温和55℃下通电过程中阴极和阳极界面处微观组织的演变,电流密度均采用104A/cm2。结果表明,室温条件下通电达到25 d,Bi原子由阴极向阳极发生了扩散迁移,在阳极界面处形成了厚度约22.4μm的均匀Bi层,而阴极出现了Sn的聚集。加载55℃通电2 d后,焊点发生了熔融,阴极界面处形成了厚度为34.3μm的扇贝状IMC,而阳极界面IMC的厚度仅为9.7μm。在IMC层和钎料基体之间形成了厚度约7.5μm的Bi层,它的形成阻碍了Sn原子向阳极界面的扩散迁移,进而阻碍了阳极界面IMC的生长,导致了异常极化效应的出现。     

焦耳热效应引发的晶须生长机理研究

研究了Cu/Sn3.8Ag0.7Cu/Cu一维焊点在电流密度为5×103 A/cm2、环境温度为100℃作用下晶须的生长机理。研究结果表明,通电300 h后,在Cu/Sn3.8Ag0.7Cu/Cu焊点的阳极界面出现了一些小丘,而在焊点的阴极出现了一些裂纹;通电500 h后,焊点阴极界面的裂纹进一步扩展,而且在裂纹处发现了大量纤维状Sn晶须,其长度超过10μm;继续通电达到700 h后,Sn晶须的数量没有增加,同时停止生长。由于电迁移的作用,金属原子在电子风力的作用下由焊点的阴极向阳极进行了扩散迁移,进而在阴极处形成裂纹。随着裂纹逐渐扩展,导致该区域处的电流密度急剧增大,焦耳热聚集效应明显,为了释放应力,形成了纤维状的晶须。     

倒装焊SnPb焊点热循环失效和底充胶的影响

采用实验方法 ,确定了倒装焊 Sn Pb焊点的热循环寿命 .采用粘塑性和粘弹性材料模式描述了 Sn Pb焊料和底充胶的力学行为 ,用有限元方法模拟了 Sn Pb焊点在热循环条件下的应力应变过程 .基于计算的塑性应变范围和实验的热循环寿命 ,确定了倒装焊 Sn Pb焊点热循环失效 Coffin- Manson经验方程的材料参数 .研究表明 ,有底充胶倒装焊 Sn Pb焊点的塑性应变范围比无底充胶时明显减小 ,热循环寿命可提高约 2 0倍 ,充胶后的焊点高度对可靠性的影响变得不明显     

SnAgCu无铅焊点的电迁移行为研究

电迁移引发的焊点失效已经成为当今高集成度电子封装中的最严重的可靠性问题之一。应用SnAgCu无铅焊膏焊接微米级铜线,进行电迁移实验。结果表明:焊点形貌从原来的光滑平整变得凹凸不平,阴极处出现了裂纹和孔洞,并且在铜基板和Cu6Sn5金属间化合物(IMC)之间出现薄薄的一层Cu3Sn金属间化合物,由ImageJ软件测量其平均厚度约为2.11μm;而在阳极附近没有明显的Cu3Sn金属间化合物形成。     

Ni颗粒对SnBi焊点电迁移的抑制作用

为抑制芯片中微小焊点的电迁移,向共晶SnBi钎料中添加微米级Ni颗粒,并在φ0.5mm铜线接头上形成焊点。结果表明:当电流密度为104A/cm2、通电96h后,阳极附近没有出现富Bi层,即电迁移现象得到抑制。这是由于Ni颗粒与Sn形成了IMC,阻挡了Bi沿Sn基体扩散的快速通道,防止了两相分离,提高了焊点可靠性。     

Effect of Cu stud microstructure and electroplating process onintermetallic compounds growth and reliability of flip-chip solder bump

In electroplating-based flip-chip technology, the Cu stud and solder deposition processes are two of the most important factors affecting the reliability of solder joints. The growth of Cu-Sn intermetallic compounds (IMC) also plays a critical role. In this paper, the effect of Cu stud surface roughness and microstructures on the reliability of solder joint was studied. The surface roughness of the Cu stud was increased as the Cu electroplating current density increased. The microstructural morphology of the Cu-Sn IMC layer was affected by Cu stud surface structure. We found the growth rate of IMC layer increased with the increasing of Cu stud grain size and surface roughness during aging test. The growth kinetics of Cu-Sn intermetallic compound formation for 63Sn/37Pb solder followed the Arrhenius equation with activation energy varied from 0.78 eV to 1.14 eV. The ratios of Cu₃ Sn layer thickness to the total Cu-Sn IMC layer thickness was in the range of 0.5 to 0.15 for various Cu microstructures at 150°C during thermal aging test. The shear strength of solder bump was measured after thermal aging and temperature/humidity tests. The relationship between electroplating process and reliability of solder joints was established. The failure mode of solder joints was also analyzed     

Interfacial behaviors of Sn-Pb,Sn-Ag-Cu Pb-free and mixed Sn-Ag-Cu/Sn-Pb solder joints during electromigration

SnPb-SnAgCu mixed solder joints with Sn-Pb soldering Sn-Ag-Cu Pb-free components are inevitably occurred in the high reliability applications. In this study, the interfacial behaviors in Sn-37Pb and Sn-3.0Ag-0.5Cu mixed solder joints was addressed and compared with Sn-37Pb solder joints and Sn-3.0Ag-0.5Cu solder joints with the influence from isothermal aging and electromigration. Considering the difference on the melting point between Sn-3.0Ag-0.5Cu and Sn-37Pb solder, two mixed solder joints: partial mixing and full mixing between Sn-Pb and Sn-Ag-Cu solders were reached with the peak reflowing temperature of 190 and 250 °C, respectively. During isothermal aging, the intermetallic compound (IMC) layer increased with aging time and its growth was diffusion controlled. There was also no obvious affect from the solder composition on IMC growth. After electromigration with the current density of 2.0 × 10³ A/cm², Sn-37Pb solder joints showed the shortest lifetime with the cracks observed at the cathode for the stressing time < 250 h. In Sn-3.0Ag-0.5Cu Pb-free solder joints, current stressing promoted the growth of IMC layer at the interfaces, but the growing rate of IMC at the anode interface was far faster than that at the cathode interface. Therefore, there existed an obvious polarity effect on IMC growth in Sn-Ag-Cu Pb-free solder joints. After Sn-37Pb was mixed with Sn-3.0Ag-0.5Cu Pb-free solder, whether the partial mixing or the full mixing between Sn-Pb and Sn-Ag-Cu can obviously depress both the crack formation at the cathode side and the IMC growth at the anode.     

A study in flip-chip UBM/bump reliability with effects of SnPb solder composition

This paper aims to investigate the electromigration phenomenon of under-bump-metallization (UBM) and solder bumps of a flip-chip package under high temperature operation life test (HTOL). UBM is a thin film Al/Ni(V)/Cu metal stack of 1.5 μm; while bump material consists of Sn/37Pb, Sn/90Pb, and Sn/95Pb solder. Current densities of 2500 and 5000 A/cm² and ambient temperatures of 150–160 °C are applied to study their impact on electromigration. It is observed that bump temperature has more significant influence than current density does to bump failures. Owing to its higher melting point characteristics and less content of Sn phase, Sn/95Pb solder bumps are observed to have 13-fold improvement in Mean-Time-To-Failure (MTTF) than that of eutectic Sn/37Pb. Individual bump resistance history is calculated to evaluate UBM/bump degradation. The measured resistance increase is from bumps with electrical current flowing upward into UBM/bump interface (cathode), while bumps having opposite current polarity cause only minor resistance change. The identified failure sites and modes from aforementioned high resistance bumps reveal structural damages at the region of UBM and UBM/bump interface in forms of solder cracking or delamination. Effects of current polarity and crowding are key factors to observed electromigration behavior of flip-chip packages.     

Electromigration Behavior in Sn-37Pb and Sn-3.0Ag-0.5Cu Flip-Chip Solder Joints under High Current Density

The electromigration of conventional Sn-37Pb and Pb-free Sn-3.0Ag-0.5Cu (in wt.%) solder bumps was investigated with a high current density of 2.5 × 10⁴ A/cm² at 423 K using flip-chip specimens comprised of an upper Si chip and a lower bismaleimide triazine (BT) substrate. Electromigration failure of the Sn-37Pb and Sn-3.0Ag-0.5Cu solder bumps occurred with complete consumption of electroless Ni immersion Au (ENIG) underbump metallization (UBM) and void formation at the cathode side of the solder bump. Finite element analysis and computational simulations indicated high current crowding of electrons in the patterned Cu on the Si chip side, whereas the solder bumps and Cu line of the BT substrate had a relatively low density of flowing electrons. These findings were confirmed by the experimental results. The electromigration reliability of the Sn-3.0Ag-0.5Cu solder joint was superior to that of Sn-37Pb.     

Mechanical response of solder joints in flip-chip type structures

The mechanical response of PbSn solder joints of two different solder alloys (37 wt.% Pb - 63 wt.% Sn and 95 wt.% Pb - 5 wt.% Sn) used as flip-chip type interconnects is measured through mechanical testing (in tension and in shear). The influence of solder pad composition (Au and Ni) upon the behaviour of the solder joints is examined. Fatigue testing performed upon flipchip samples demonstrates the difference in mechanical comportment between Pb37Sn63 and Pb95Sn5 solders. A model for predicting fatigue life is put forward.     

Electromigration Reliability and Morphologies of Cu Pillar Flip-Chip Solder Joints with Cu Substrate Pad Metallization

The Cu pillar is a thick underbump metallurgy (UBM) structure developed to alleviate current crowding in a flip-chip solder joint under operating conditions. We present in this work an examination of the electromigration reliability and morphologies of Cu pillar flip-chip solder joints formed by joining Ti/Cu/Ni UBM with largely elongated ∼62 μm Cu onto Cu substrate pad metallization using the Sn-3Ag-0.5Cu solder alloy. Three test conditions that controlled average current densities in solder joints and ambient temperatures were considered: 10 kA/cm² at 150°C, 10 kA/cm² at 160°C, and 15 kA/cm² at 125°C. Electromigration reliability of this particular solder joint turns out to be greatly enhanced compared to a conventional solder joint with a thin-film-stack UBM. Cross-sectional examinations of solder joints upon failure indicate that cracks formed in (Cu,Ni)₆Sn₅ or Cu₆Sn₅ intermetallic compounds (IMCs) near the cathode side of the solder joint. Moreover, the ~52-μm-thick Sn-Ag-Cu solder after long-term current stressing has turned into a combination of ~80% Cu-Ni-Sn IMC and ~20% Sn-rich phases, which appeared in the form of large aggregates that in general were distributed on the cathode side of the solder joint.