Influence of the processing rates and sintering temperatures on the dielectric properties of CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> ceramics

The stoichiometric CaCu₃Ti₄O₁₂ pellets were prepared by the solid state synthesis. X-ray diffraction data revealed the tenorite CuO and cuprite Cu₂O secondary phases on the unpolished CaCu₃Ti₄O₁₂ samples regardless of the heating rates. Also, the dielectric constant marked the highest for the CaCu₃Ti₄O₁₂ sample sintered at the lowest heating rate (1°C/min), which was explained by the increased grain conductivity due to the cation reactions. On the other hand, Cu₂O phase was found only on the unpolished CaCu₃Ti₄O₁₂ sample sintered over 1100°C and those are considered as the remains reduced from the CuO phase. The higher sintering temperature showed the increased dielectric constant and the loss tangent of the CaCu₃Ti₄O₁₂ samples, and this result could be interpreted by the impedance measurement data. The relationship between the processing condition and the dielectric properties was discussed in terms of the cation non-stoichiometry and the defect chemistry in CaCu₃Ti₄O₁₂.     

Effects of Processing Conditions on the Dielectric Properties of CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript>

There have been a number of recent reports of anomalously large permittivities (ε _r ≈ 10⁴) in the material CaCu₃Ti₄O₁₂. The dielectric spectra is characterized by a large, relatively temperature independent permittivity near room temperature which exhibits a dielectric relaxation above 100 K. The crystal structure of CaCu₃Ti₄O₁₂ can be described as pseudo-perovskite with a cubic unit cell with a lattice constant of 7.391 Å. The ubiquitous occurrence of this dielectric behavior in ceramics, single crystals, and thin films suggests that the polarization is not related to a simple conducting grain/insulating grain boundary-type system. While the precise origin of the dielectric response is not entirely clear, in this work it is shown that processing conditions have a significant influence on the room temperature dielectric properties. Specifically, the permittivity and loss exhibit a strong dependence on the oxygen partial pressure and sintering time. In fact, studies of the effects of sintering time and supporting evidence from capacitance-voltage measurements conclusively show that there is no direct relationship between the permittivity and grain size, as is the case in classical boundary layer systems. Lastly, with aliovalent doping the room temperature dielectric properties can be optimized to provide a high permittivity (ε _r ～ 8,000) dielectric with relatively low loss (tan δ < 0.05 at 1 kHz).     

Dielectric properties of BiFeO3 ceramics obtained from mechanochemically synthesized nanopowders

Dielectric behaviour of BiFeO₃ ceramics, obtained by hot-pressing of nanopowders produced by mechanochemical synthesis from Bi₂O₃ and Fe₂O₃ oxides (weight ratio 2:1), was studied in the temperature range 125?C575?K. The ceramics was found to exhibit step-like dielectric response ??*(T) with high permittivity values, similar to the behaviour of materials with giant dielectric permittivity. Three overlapping relaxation processes contribute to the dielectric response: i) relaxation in the low-temperature range (220?C420?K), characterized by activation energy of 0.4?eV, ii) relaxation in the temperature range 320?C520?K with activation energy of 1.0?eV and iii) broad dielectric anomaly in the vicinity of 420?K, which disappears after 1?h annealing at 775?K. The low-temperature relaxation is ascribed to the carrier hopping process between Fe²⁺ and Fe³⁺ ions. The presence of mixed valence of the Fe ions was proved by X-ray photoelectron spectroscopy. Dielectric relaxation in the middle-temperature range is considered as a result of grain boundary effect and internal barrier layers related to Bi₂₅FeO₄₀ phase as verified by X-ray diffraction. The high-temperature dielectric anomaly we relate to short-range hopping of ordered oxygen vacancies.     

Low-temperature dielectric properties of double-perovskite Ca2CoNbO6

Double-perovskite Ca₂CoNbO₆ (CCNO) ceramics were prepared via the solid-state reaction route. Their dielectric properties were investigated as a function of temperature (between 100 and 330?K) in the frequency range from 40?Hz to 10?MHz. Two thermally activated dielectric relaxations were observed with the activation energy around 0.13?eV for the low-temperature relaxation and 0.37?eV for the high-temperature relaxation. Annealing in O₂ and N₂ can remarkably change the dielectric constant, background, relaxation peak intensity and position, etc. These results can be well explained based on the fact that both oxygen and cobalt vacancies coexist in the sample. The low-temperature relaxation was found to be related to the dipolar effect due to the hopping holes, and the high-temperature relaxation was associated with the defect relaxation caused by oxygen and cobalt vacancies.     

Dielectric properties and defect mechanisms of (1-<Emphasis Type="Italic">x</Emphasis>)Ba(Fe<Subscript>0.5</Subscript>Nb<Subscript>0.5</Subscript>)O<Subscript>3</Subscript> -<Emphasis Type="Italic">x</Emphasis>BiYbO<Subscript>3</Subscript> ceramics

(1-x)Ba(Fe_0.5Nb_0.5)O₃ -xBiYbO₃ (BFN-xBY) ceramics were prepared by a conventional solid-state reaction method. The dielectric properties and relaxation behavior of BFN-xBY ceramics were analyzed according to dielectric and impedance spectroscopy. Dielectric permittivity of the ceramics increases with increasing temperature below 500 K then remains unchanged up to 700 K, while corresponding loss factor decreases with the increase of temperature below 500 K then increase slowly. Defect compensation mechanism of this system was analyzed in detail. The giant dielectric behavior of the ceramics arises from the internal barrier layer capacitor (IBLC) effect. Polarization effect at insulating grain boundaries between semiconducting grains accompanied by a strong Maxwell-Wagner (MW) relaxation mode. The characteristic of grain boundaries was revealed using impedance spectroscope and the universal dielectric response law.     

Excellent dielectric constants observed in heterogeneous conduction Ba(Zr<Subscript>0.25</Subscript>Ti<Subscript>0.75</Subscript>)O<Subscript>3</Subscript> ceramics doped with Sr(Fe<Subscript>0.5</Subscript>Nb<Subscript>0.5</Subscript>)O<Subscript>3</Subscript>

The (1-x)Ba(Zr_0.25Ti_0.75)O₃-xSr(Fe_0.5Nb_0.5)O₃ or (1-x)BZT-xSFN ceramics have been fabricated via a solid-state reaction technique. All ceramics exhibit a pure phase perovskite with cubic symmetry. The addition of a small amount of SFN (x?=?0.1) produces an obvious change in dielectric behavior. Very high dielectric constants (ε_r?>?164,000 at 1 kHz and temperature?>?150°C) are observed and the value is obviously higher than dielectric constants for Ba(Zr_0.25Ti_0.75)O₃ and Sr(Fe_0.5Nb_0.5)O₃ ceramics. The ferroelectric measurement data suggests that the unmodified sample exhibited a ferroelectric behavior. However, a transformation from a ferroelectric to a relaxor-like behavior is noted with increasing x concentration. Impedance Spectroscopy (IS) analysis indicates that the presence of excellent dielectric constants is due to the heterogeneous conduction in the ceramics after adding SFN, which can be explained in terms of the Maxwell-Wagner polarization mechanism.     

Low Temperature Sintering of BaTi<Subscript>4</Subscript>O<Subscript>9</Subscript>-Based Middle-<Emphasis Type="Italic">k</Emphasis> Dielectric Composition for LTCC Applications

Effect of glass addition on the low-temperature sintering and microwave dielectric properties of BaTi₄O₉-based ceramics were studied to develop the middle-k dielectric composition for the functional substrate of low-temperature co-fired ceramics. When 10 wt% of glass was added, sufficient densification was obtained and the relative density more than 98% was reached at the sintering temperature of 875C. The microwave dielectric properties were k = 32, Q × f = 9000 GHz, and t_cf = 10 ppm/C. As the added amount of glass frit with base dielectric composition, phase changes from BaTi₄O₉ to BaTi₅O₁₁ and Ba₄Ti₁₃O₃₀ was observed, which result in the modification of microwave dielectric properties.     

Microwave dielectric properties of Na<Superscript>+</Superscript> and M<Superscript>3+</Superscript>-doped Ba(Mg<Subscript>0.5</Subscript>W<Subscript>0.5</Subscript>)O<Subscript>3</Subscript> ceramics

In this study, phase evolution, microstructure, and microwave dielectric properties of (Ba_0.98Na_0.02)(Mg_0.48M³⁺_0.02W_0.5)O₃ (M³⁺?=?Al, Ga, Sc, In, Yb, Y, Dy, Gd, and Sm) ceramics sintered at 1700 °C for 1 h were investigated. All the compounds exhibited an ordered cubic perovskite structure. Regardless of the ionic radius of the doped M³⁺ ions, BaWO₄ was detected as the secondary phase in all the compounds. The field emission scanning electron microscopy (FE-SEM) images revealed a dense microstructure in all the compounds, except in the Al-doped compound, which exhibited an insufficient grain growth. The large and irregularly shaped grains indicated that the liquid phase sintering occurred. Splitting of the A_1g(O) mode was observed in the Raman spectra of large M³⁺ ion-doped compounds. Splitting of the F_2g modes did not occur and the bands were sharp, indicating that the cubic symmetry was retained. As the ionic radius of the doped M³⁺ ions increased, the dielectric constant (ε_r) increased slightly. The compounds doped with M³⁺?=?Sc, In, Yb, and Y exhibited a very high quality factor (Q?×?f₀) in the range of 250,000 ~ 280,000 GHz. In the case of the compounds doped with M³⁺?=?Al, Ga, Sc, In, Yb, Y, and Dy, the value of the temperature coefficient of resonant frequency (τ_f) was in the range of ?24 ~ ?19 ppm/°C, while the Gd and Sm-doped compounds exhibited positive values of 2.8 and 31.2 ppm/°C, respectively. The dielectric constant, quality factor, and temperature coefficient of resonant frequency of the In-doped compound, i.e., (Ba_0.98Na_0.02)(Mg_0.48In_0.02W_0.5)O₃, were 18.7, 286,557 GHz, and???24.4 ppm/°C, respectively.     

Giant dielectric response with reduced loss in ceramics with nominal composition of La<Subscript>1.5</Subscript>Sr<Subscript>0.5</Subscript>NiO<Subscript>4</Subscript>-SiO<Subscript>2</Subscript>

Structures and dielectric properties of La_1.5Sr_0.5NiO₄ ceramics with different contents of SiO₂ additives were investigated. The La_1.5Sr_0.5NiO₄ particles were dispersed into SiO₂ matrixes via a sol-gel process, while the homogeneous distribution was destroyed by the reaction between La_1.5Sr_0.5NiO₄ and SiO₂ during the sintering process, so the composite ceramics consisted of La_1.5Sr_0.5NiO₄, La_9.33Si₆O₂₆ and NiO phases. The dielectric constants at room temperature varied slightly, while the dielectric losses could be suppressed with a moderate amount of SiO₂ additive. Temperature-independent giant dielectric constant with low loss was achieved in the ceramics with nominal composition of La_1.5Sr_0.5NiO₄–0.80SiO₂. Based on the analysis of impedance spectra, the giant dielectric response in the composite ceramics was attributed to the combination of the small polaronic hopping and Maxwell-Wagner effect.     

Studies of structural,dielectric and impedance properties of Bi<Subscript>9</Subscript>Fe<Subscript>5</Subscript>Ti<Subscript>3</Subscript>O<Subscript>27</Subscript> ceramics

Bi₉Fe₅Ti₃O₂₇ is an eight-layered material belonging to the family of bismuth layered structured ferroelectromagnets. The polycrystalline sample of this compound was prepared by a standard solid-state reaction technique. The formation of the compound in an orthorhombic crystal structure was confirmed by an X-ray diffraction (XRD) technique (lattice parameters: a?=?5.5045[27] Å, b?=?5.6104[27] Å, c?=?76.3727[27] Å). Detailed studies of surface morphology of the compound using scanning electron microscopy (SEM) exhibit that the compound has domains of plate shaped grains. Studies of dielectric and electric properties in a wide temperature range (30–500 °C) at different frequencies (100 Hz–1 MHz) exhibit an anomaly at 291?±?2 °C, which is related to ferroelectric to paraelectric phase transition as suggested by hysteresis loop at room temperature. The values and nature of temperature variation of dc conductivity exhibit the NTCR behavior of the compound.     

Dielectric and nonlinear electrical behaviors of Ce-doped CaCu3Ti4O12 ceramics

We present a remarkable effect of Ce doping on the dielectric and nonlinear electric properties of CaCu₃Ti₄O₁₂ ceramics. Microstructure analysis indicates that Ce-doped CCTO ceramics are composed of large and small grains. Our results indicate that only 2.5 at. % Ce doping can suppress the dielectric permittivity in CaCu₃Ti₄O₁₂ by up to two orders of magnitude (from 10⁴ to 10² ), and the nonlinear varistor characteristics disappear completely, which may be due mainly to the Cu⁺ ions?? disappearing caused by the Ce doping.     

Structural,dielectric and magnetic properties of particulate composites of relaxor (BaTi<Subscript>0.85</Subscript>Sn<Subscript>0.15</Subscript>O<Subscript>3</Subscript>) and ferrite (NiFe<Subscript>2</Subscript>O<Subscript>4</Subscript>) synthesized by gel-combustion method

Particulate composites of (1-x) BaTi_0.85Sn_0.15O₃ – x NiFe₂O₄ (with x?=?5, 10,15 and 20 wt%) were synthesized using the solid-state reaction method by sintering at 1350 °C for 4 h. Formation of the diphase composites was confirmed by X-ray diffraction (XRD) and Fourier Transform Infra-red (FTIR) techniques. Temperature (RT-200 °C) and frequency (20 Hz- 1 MHz) dependent of AC conductivity, dielectric constant and dissipation have been studied. The dielectric constant exhibits strong frequency dispersion in the range 20 Hz-1 kHz which is attributed to Maxwell-Wagner interfacial polarization occurring at grain-grain-boundaries interface/interface of grains of BTS-NF. The M-H curve of all the composites exhibited a hysteresis loops typical charcateistic of a ferromagnetic material. The ferromagnetic ordering in the composites on account of NiFe₂O₄ as a constituent is explained using bound magnetic polarons (BMPs) model. The experimental magnetic data have been fitted to BMP model. Value of M_s is smaller, whereas of H_c and M_r are higher of the composites compared to value for NiFe₂O₄. The temperature at which divergence in the M vs. T plot in ZFC and FC starts is higher for the composites than for NiFe₂O₄.     

Synthesis of (Ba<Subscript>1−x</Subscript>Sr<Subscript>x</Subscript>)(Ti<Subscript>0.5</Subscript>Zr<Subscript>0.5</Subscript>)O<Subscript>3</Subscript> ceramics and effect of Sr content on room temperature dielectric properties

The compositions in the system (Ba_1−x Sr _x )(Ti_0.5Zr_0.5)O₃ with different Sr (x) content, were synthesized through solid oxide reaction route. The phase formation behaviors in the system were investigated by XRD. The room temperature dielectric properties of the compositions were investigated in the frequency range 10 Hz to 13 MHz. The solid solution system Ba_1−x Sr _x Ti_0.5Zr_0.5O₃ remains as cubic perovskite up to x < 0.6 and transforms into the tetragonal structure above x > 0.6. Composition with x = 0.6 contains a mixture of cubic and tetragonal phases with broadened diffraction pattern. It is observed that the increasing of Sr substitution results in the decreasing of bulk density, average grain size and dielectric constants etc. in the composition system. The AC dielectric conductivity of the ceramics also decreases with the increase in Sr-substitution due to decrease in loss as well as grain size with that substitution.     

Piezoelectric Properties of 0.2[Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)]-0.8[PbTiO<Subscript>3</Subscript>-PbZrO<Subscript>3</Subscript>] Ceramics Sintered at a Low Temperature with the Aid of Li<Subscript>2</Subscript>O

The dielectric and piezoelectric properties of 0.2Pb(Mg_1/3Nb_2/3)O₃-0.8Pb(Zr_0.475Ti_0.525)O₃ (abbr. as PMNZT) ceramics were measured. Extremely low sintering temperatures of 950^∘C using liquid-phase sintering aid of Li₂O is achieved which was very useful for multi-layered applications. X-ray study shows the splitting of rhombohedral (200) in pure PMNZT to (002) and (200) peaks in Li₂O doped samples. 10 times higher dielectric constant was achieved in Li₂O doped samples to compare to pure ones although the Curie temperature (T_c = 322^∘C) of Li₂O doped PMNZT ceramics was not changed. The value of k_p and k₃₃ increased up to 0.1 wt% of Li₂O and saturating thereafter.     

Synthesis, characterization and giant dielectric properties of CaCu3Ti4O12 ceramics prepared by a polyvinyl pyrrolidone-dimethylformamide solution route

CaCu₃Ti₄O₁₂ powders were successfully prepared by a polyvinyl pyrrolidone-dimethylformamide solution route. Pure phase of CaCu₃Ti₄O₁₂ was achieved at a low calcination temperature and short reaction time at 800 °C for 3 h. High porosity and neck-grain growth network were observed in CaCu₃Ti₄O₁₂ powders. The sintered CaCu₃Ti₄O₁₂ ceramic with fine-grained microstructure exhibited a very high dielectric constant of 1.26?×?10⁴ and low loss tangent of about 0.07 at 1 kHz and 20 °C. Nonlinear current-voltage behavior and dielectric properties were found to be closely related to the microstructure.     

Electrical conductivity of the Al-stabilized La<Subscript>2/3</Subscript>TiO<Subscript>3</Subscript>

A-site deficient lanthanum titanate (La_2/3TiO₃) materials with perovskite structure are attractive due to their electrical applications such as ion conductors and dielectrics. However, its stability at room temperature in air is obtained only if Na or Li etc. is incorporated into La site or Al into Ti site. In this study, the electrical conductivities of La_0.683(Ti_0.95Al_0.05)O₃ have been measured in oxygen partial pressure (Po₂) between 1 and 10⁻¹⁸ atm at 1000~1400°C. The electrical conductivity exhibited −1/4, −1/6 and −1/5 dependence (log σ ∝ log , n = −1/4, −1/6, −1/5) depending upon temperature and Po₂. The defect model explaining the observation was proposed and discussed. The chemical diffusion coefficient was estimated from the electrical conductivity relaxation.     

Co-Precipitation Method for the Preparation of Nanocrystalline Ferroelectric SrBi<Subscript>2</Subscript>Nb<Subscript>2</Subscript>O<Subscript>9</Subscript> Ceramics

A simple co-precipitation technique had been successfully applied for the preparation of pure ultrafine single phase SrBi₂Nb₂O₉. Ammonium hydroxide and ammonium oxalate were used to precipitate Sr^{2 +}, Bi³⁺ and Nb⁵⁺ cations simultaneously. No pyrochlore phase was found while heating powder at 850C and pure SrBi₂Nb₂O₉ (SBN) phase was formed as revealed by the X-ray diffraction (XRD) studies. Particle size and morphology was studied by transmission electron microscopy (TEM). The room temperature dielectric constant at 1 kHz is 100. The ferroelectric hysteresis loop parameters of these samples were also studied.     

Dielectric and Ferroelectric Characterization of Na(Ta,Nb)O<Subscript>3</Subscript> Solid Solution Ceramics

Ceramics in the Na(Ta_{1 − x}Nb_x)O₃ system were prepared by a solid state reaction approach, and their dielectric characteristics were evaluated together with the structures. The complete solid solution with orthorhombic structures was observed in the present system, and three supposed phase transitions at about 475, 580 and 650^∘C were observed by DTA. Only one dielectric anomaly was observed at high temperature for x = 0.2 and 0.4, and alternative dielectric anomaly (a diffused dielectric peak) was observed around 170 and 380^∘C for x = 0.6 and 0.8, respectively. The compositions of 0.6 and 0.8 are weakly ferroelectric and those of 0.2 and 0.4 are supposed to be antiferroelectric at room temperature.     

Structure and properties of Bi<Subscript>2</Subscript>O<Subscript>3</Subscript> doped Bi(Mg<Subscript>1/2</Subscript>Ti<Subscript>1/2</Subscript>)O<Subscript>3</Subscript>-0.38PbTiO<Subscript>3</Subscript> ceramics with MPB composition

0.62Bi(Mg_1/2Ti_1/2)O₃-0.38PbTiO₃-xwt%Bi₂O₃ (BMT-0.38PT-xBi₂O₃) ceramics were prepared by conventional powder-processing method. It indicated that the morphotropic phase boundary (MPB) region located in 0.0?≤?x?≤?0.3. For x?=?0.3, it exhibited good piezoelectric properties, d₃₃ ~245pC/N and k_p ~40 %. With the increase of Bi₂O₃ content, the Curie temperature (T_c) was found to increase, and the dielectric loss was found to decrease above 200 °C compared with BMT-0.38PT sample. Finally, it can be found that depolarization temperature was around 350 °C by thermal depoling method.     

Fatigue Melioration of Neodymium-Modified Bi4Ti3O12 Ceramics

Pure and Nd-modified Bi₄Ti₃O₁₂ ceramics were prepared using the conventional solid state reaction method and their dielectric properties and mechanical properties are investigated. It shows that the activation energy of oxygen vacancies is enhanced whereas the concentration of oxygen vacancies is reduced when Bi³⁺ ions are partially substituted by Nd³⁺ ions. The Cole-Cole fitting to the dielectric loss reveals a strong correlation among oxygen vacancies. The strong correlation reduces the activation energy of oxygen vacancies efficiently. Therefore, we conclude that the diluted oxygen vacancies concentration is the origin of the excellent fatigue resistance of Nd-modified Bi₄Ti₃O₁₂ materials.