Ru非磁性中间层的制备及其结构研究

以不同晶面的Si片作为基底,室温下,采用射频磁控溅射的方法制备得到Ru非磁性薄膜.利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和原子力显微镜(AFM)分析薄膜的结构和形貌.研究不同基底材料对Ru中间层结构和形貌的影响.结果表明:以单晶Si(100)、Si(110)、Si(111)片作为基底制备的Ru薄膜均呈(002)晶面的择优取向生长;Ru-Si(100)、Ru-Si(110)和Ru-Si(111)薄膜表面均由细小的圆形晶粒组成.Si(111)面上生长的Ru薄膜表面颗粒尺寸最小,表面粗糙度最大,有利于磁记录层磁学性能的提高.     

衬底与缓冲层的晶格失配对CeO_2缓冲层外延生长的影响

采用金属有机沉积(MOD)技术在La Al O3(LAO)、Y稳定的氧化锆(YSZ)和Ni-W衬底上沉积了Ce O2缓冲层薄膜,并研究了衬底与缓冲层的晶格失配对其外延生长的影响。结果表明,随着衬底和缓冲层薄膜之间晶格失配的增大,缓冲层薄膜内部的压应变增加,晶界浓度增加,晶粒生长速率减小。衬底和缓冲层薄膜之间的晶格失配越小,越有利于薄膜织构度的增大。Ce O2薄膜的表面形貌及粗糙度的演化对衬底和缓冲层薄膜之间的晶格失配并没有明确的依赖关系。     

CoCrPtNb／CrTi／C多层膜记录介质的制备和性能研究

采用CoCrPtNb四元合金作磁记录介质，并采用多层膜结构（CoCrPt）100-Nbx/CrTi／C／Glass制备玻璃盘基硬盘。实验结果表明：采用适宜厚度的籽晶层与合适组分的底层和磁性层的多层膜结构，即使在室温下溅射，此种薄膜磁记录介质也可得到高达260kA／m的矫顽力；在550℃高温下，经过30min真空退火后，其矫顽力有较大幅度提高，并在Nb含量为2．4％（原子分数）时达到极大值386kA／m，适用于高密度磁记录。同时，也详细分析了磁性层和底层组分、籽晶层厚度以及真空退火对磁记录介质磁性能和微结构的影响。     

高功率脉冲磁控溅射管内壁沉积Cr薄膜结构及性能

由于管腔空间限制,物理气相沉积领域中管内壁沉积薄膜的均匀性和质量有待研究和改善。采用高功率脉冲磁控溅射技术(HiPIMS)在直径 40 mm、长度 120 mm 的 20 #碳钢管内表面进行 Cr 薄膜沉积,并探究管内不同位置沉积 Cr 薄膜的结构和力学性能。采用 SEM 分析薄膜的截面形貌和厚度变化,采用 AFM 分析薄膜的表面形貌和表面粗糙度变化,采用 XRD 分析薄膜的晶相结构和晶粒尺寸,采用球-盘式旋转摩擦磨损试验机对薄膜的耐摩擦磨损性能进行测试。结果表明,随着管内深度的增加,距管口距离为 15 mm(位置 1)、45 mm(位置 2)、75 mm(位置 3)和 105 mm(位置 4)位置的膜层厚度分别为 1 690 nm、827 nm、210 nm 和 0 nm。从位置 1 到位置 3,所沉积的 Cr 薄膜表面粗糙度由 12.6 nm 下降到 4.8 nm,晶粒尺寸由 15 nm 增加到 38 nm,摩擦因数由 0.68 上升到 0.89。     

TiAlN/CrN多层膜的组织结构及耐蚀性机理

目的研究Ti AlN/CrN多层膜及Ti AlN、Cr N单一膜层的微观组织和电化学性能区别,分析不同结构薄膜材料的耐腐蚀性影响因素。基于电化学参数、组织结构和腐蚀形貌特征,为开发新型腐蚀性薄膜提供理论依据。方法采用多弧离子镀方法,在316不锈钢基底上先沉积150 nm Cr薄膜作为过渡层,然后交替沉积Cr N薄膜和Ti AlN薄膜,制备单层厚度为10 nm的Ti AlN/CrN多层膜。作为对比,制备单一Ti AlN、CrN薄膜。通过SEM、XRD表征薄膜断面形貌、组织结构,并分析耐蚀机理,结合极化曲线和阻抗谱对三种涂层进行电化学性能分析,最后对涂层进行浸泡腐蚀试验。结果 Ti Al N/Cr N纳米多层膜为面心立方结构,呈现共格外延生长,且呈(200)择优取向。纳米多层膜的动电位极化曲线测量结果与不锈钢基体和单层薄膜相比,其腐蚀电位正移为-0.36 V,腐蚀电流密度降低为0.501μA/cm~2,极化电阻为120 kΩ·cm~2。阻抗谱试验结果表明,相比较于单层膜和基体,Ti Al N/Cr N多层膜的CPE值最低,为29.83×10~(-6)Ω~(-1)·cm~(-2)·sn,n值为0.922,电阻为1.50×1~06Ω·cm~2。腐蚀形貌分析可得出,多层薄膜腐蚀后表面形貌与沉积态涂层形貌最为接近,认为其具有较高的耐腐蚀性。结论纳米层状结构改变了单一薄膜的原始生长模式,抑制了粗大柱状晶的生长,减小了薄膜的固有缺陷、晶粒尺寸,对薄膜的耐蚀性有正面积极的作用。     

超高真空电子束蒸镀Fe/Ru多层膜的结构和磁性

采用超高真空电子束蒸镀方法制备了Fe/Ru多层膜,Ru层厚度固定为2 nm,Fe层厚度为0.6～5 nm,研究了Fe层厚度的变化对薄膜结构及其磁性能的影响.Fe层厚度小于5 nm时,受Ru层HCP结构的影响,Fe层生长为六方晶格的亚稳相.多层膜呈现明显的平面易磁化特性,并随Fe厚度降低而减弱.Fe的平均原子磁矩和Fe层厚度的倒数存在线性关系,与死层理论预言的结果相一致.实验结果证实,亚稳相六方晶格的Fe具有铁磁性,其平均原子磁矩计算值为1.9μB,略低于BCC Fe,Fe/Ru界面层的死层厚度为0.25 nm.     

原子层沉积制备二氧化钛薄膜及其光催化性能

采用原子层沉积方法在K9玻璃上制备出TiO_2薄膜,利用XRD、SEM、AFM、分光光度计和紫外-可见光谱仪表征了不同沉积温度下薄膜的物相结构、光学性能和光催化性能。结果表明:25和120℃下制备的TiO_2薄膜为无定形态结构,210和300℃下可获得锐钛矿结构;随着沉积温度的升高,薄膜的晶粒尺寸变大,表面粗糙度增加,透射率降低,光催化性能增强;300℃下制备的TiO_2薄膜(2mm×2mm)经24h的紫外-可见光照射,对甲基橙溶液的降解率可达98.97%,通过平铺方式增加样品的表面积可显著提高对甲基橙溶液的降解率。     

利用Ru缓冲层中V的添加提高Co_(0.85)W_(0.15)磁性薄膜的磁性能（英文）

垂直磁记录材料需要高的磁晶各向异性能。尝试了通过改变缓冲层成分来产生晶格畸变以提高磁晶各向异性的方法。300℃下,利用直流磁控溅射设备在RuV缓冲层上沉积了Co0.85W0.15磁性薄膜,其中Ru缓冲层中添加15%V。利用X射线衍射(XRD)分析了薄膜的精细晶体结构,确定了薄膜的结构、取向关系、晶格常数、c轴分散性、fcc/hcp体积分数比和堆垛层错密度。根据实验结果,研究了Co0.85W0.15/Ru0.85V0.85/MgO(111)薄膜的晶体结构和磁晶各向异性能间的关系。实验结果表明,由于缓冲层中V的添加,晶格常数比降低,显著提高了Co0.85W0.15薄膜的磁晶各向异性。因此,可以通过缓冲层的成分设计实现不同磁性材料的磁晶各向异性。     

薄膜厚度对Y掺杂Ba0.6Sr0.4TiO3薄膜结构及介电性能的影响

采用溶胶-凝胶法(Sol-gel)在Si/SiO2/Ti/Pt基片上制备了不同厚度(正比于薄膜层数)的钇(Y)掺杂Ba0.6Sr0.4TiO3(BST)薄膜,研究了膜厚度对薄膜结构和介电性能的影响。原子力显微镜(AFM)表明,Y掺杂BST薄膜可显著改善表面形貌,且强烈依赖于薄膜厚度。当薄膜厚度适中(即当层数为8)时,表面晶粒细小、致密、均匀,晶界分明。X射线衍射(XRD)表明,Y掺杂BST薄膜显示钙钛矿结构,主要沿(110)晶面生长。随着薄膜厚度的增加,BST(110)峰的衍射强度先增后减,表明薄膜的相结构与薄膜厚度直接相关。Y掺杂BST薄膜显示优异的综合介电性能,且随着膜厚的增加,电容或介电常数减小。8层薄膜的综合介电性能最优,零偏压时的电容为17.8pF(介电常数130)、介电损耗为0.0057,调谐率为32%,优值因子为56,可满足微波调谐器件的需要。同时,就有关机理进行了分析。     

Fe/Ru界面对多层膜磁性的影响

采用高分辨透射电镜结合振动样品磁强计研究了Fe/Ru多层膜,对不同层厚的Fe/Ru多层膜的界面结构及其对磁性能的影响进行了分析。Fe层很薄时薄膜不连续,岛状分布的Fe颗粒使多层膜显示超顺磁特性。Fe/Ru界面的高分辨电镜观察发现,界面存在粗糙度的不对称性,它是多层膜中产生正磁阻的重要原因。Fe/Ru多层膜的负磁阻在退火后得到较大的提高,表明Fe/Ru多层膜的负磁阻主要来源于界面的粗糙度。     

Magnetic Property Enhancement of Co0.85W0.15 Magnetic Films by Addition of Vanadium in Ru Buffer Layer

垂直磁记录材料需要高的磁晶各向异性能。尝试了通过改变缓冲层成分来产生晶格畸变以提高磁晶各向异性的方法。300℃下,利用直流磁控溅射设备在RuV缓冲层上沉积了Co0.85W0.15磁性薄膜,其中Ru缓冲层中添加15%V。利用X射线衍射(XRD)分析了薄膜的精细晶体结构,确定了薄膜的结构、取向关系、晶格常数、c轴分散性、fcc/hcp体积分数比和堆垛层错密度。根据实验结果,研究了Co0.85W0.15/Ru0.85V0.85/MgO(111)薄膜的晶体结构和磁晶各向异性能间的关系。实验结果表明,由于缓冲层中V的添加,晶格常数比降低,显著提高了Co0.85W0.15薄膜的磁晶各向异性。因此,可以通过缓冲层的成分设计实现不同磁性材料的磁晶各向异性。     

Characterization of CuInS2 thin films prepared by sulfurization of Cu-In precursor

CuInS2 thin films were prepared by sulfurization of Cu-In precursors. The influences of the deposition sequence of Cu and In layers, such as Cu/In, Cu/In/In, and In/Cu/In, on structure, topography, and optical properties of CuInS2 thin films were investigated. X-ray diffraction results show that the deposition sequence of Cu and In layers affects the crystalline quality of CuInS2 films. Atomic force microstructure images reveal that the grain size and surface roughness are related to the deposition sequence used. When the deposition sequence of precursor is In/Cu/In, the CuInS2 thin films show a single-phase chalcopyrite structure with （112） preferred orientation. The surface morphology of CIS films is uniform and compacted. The absorption coefficient is larger than 10^4 cm^-1 with optical band gap Egclose to 1.4 eV.     

In Situ TEM Scratch Testing of Perpendicular Magnetic Recording Multilayers with a Novel MEMS Tribometer

Utilizing a newly developed two-dimensional (2D) transducer designed for in situ transmission electron microscope (TEM) nanotribology, deformation mechanisms of a perpendicular magnetic recording film stack under scratch loading conditions were evaluated. These types of films are widely utilized in storage devices, and loss of data by grain reorientation in the recording layers is of interest. The observed deformation was characterized by a stick–slip mechanism, which was induced by a critical ratio of lateral to normal force regardless of normal force. At low applied normal forces, the diamond-like carbon (DLC) coating and asperities in the recording layer were removed during scratching, while, at higher applied forces, grain reorientation and debonding of the recording layer was observed. As the normal force and displacement were increased, work for stick–slip deformation and contact stress were found to increase based upon an Archard’s Law analysis. These experiments also served as an initial case study demonstrating the capabilities of this new transducer.     

Al-TiB2纳米晶薄膜中的反Hall-Petch效应

多种微结构因素作用的相互交织使纳米晶合金中是否存在与纯金属类似的反Hall-Petch现象难以得到实验证实。选用Al-TiB_2体系,采用二维结构纳米多层膜的方法,实现了对晶粒尺寸因素的孤立和使其独立地改变,研究了晶粒尺寸对薄膜力学性能的作用规律。结果表明:Al-TiB_2过饱和固溶纳米晶薄膜也与纳米晶纯金属Al一样,存在硬度随晶粒尺寸减小从遵从Hall-Petch关系提高转变为偏离Hall-Petch关系,并进一步出现反Hall-Petch效应的3个阶段,实验得到了偏离Hall-Petch关系为32 nm,产生反Hall-Petch现象的临界晶粒尺寸为8 nm,这2个临界晶粒尺寸与分子动力学方法对纳米晶纯金属A1计算的结果相当。     

Inter-granular exchange coupling and magnetic anisotropy of Ta/Ru/Co-23 at%Pt perpendicular thin films with different Ru underlayer thicknesses

In the present work, a series of Ta/Ru/Co-23 at%Pt thin films with varied Ru underlayer thicknesses were fabricated by magnetron sputtering. All of the films show c-axis preferred orientation perpendicular to the film surface. The drop of c/a ratio and lattice expansion of Co–Pt layer with the increase in Ru underlayer thickness was revealed by X-ray diffraction(XRD). The coercivity of the Ta/Ru/Co–Pt thin films increases drastically with Ru underlayer thickness increasing, due to the enhancement of effective magneto-crystalline anisotropy constant and exchange decoupling of magnetic nano-grains. The enhancement of effective magneto-crystalline anisotropy constant is ascribed to the lattice deformation of Co–Pt layer by mismatching the Ru layer and Co–Pt surface.Moreover, the exchange decoupling of magnetic nanograins is attributed to the further isolation of magnetic nano-grains.     

磁控溅射氮分压对Nb-Si-N薄膜结构和性能的影响

用反应磁控溅射法在不同的氮分压下沉积了Nb-Si-N薄膜.结果表明：Nb-Si-N膜的成分、结构和性能随氮分压的改变而不同.随氮分压的增加,Nb-Si-N膜的Nb/Si比和表面粗糙度减小;薄膜的电阻值和微硬度增加.Nb-Si-N膜的结构为纳米晶NbN与类似Si3N4非晶相组成的纳米复合结构,且随着氮分压的增加,Nb-Si-N膜的非晶倾向增强,晶粒尺寸减小.     

超声深滚处理高强铝合金超声波焊层组织和织构研究

采用超声波金属焊接技术对2A12-T3和2A11-O铝合金进行了焊接,然后对焊层进行了超声深滚处理。通过扫描电镜、电子背散射衍射和透射电镜分析了超声深滚处理前后超声波焊层的宏观形貌和微观组织。扫描电镜和透射电镜分析表明,超声深滚处理能够有效去除超声波焊层表面的焊接压痕,降低表面粗糙度,使焊接界面的组织更加均匀。电子背散射衍射分析表明,超声深滚处理后焊层组织发生再结晶,形成再结晶织构和形变诱导晶粒长大,有助于消除焊接界面的焊接残余应力。因此,超声深滚处理有助于改善铝合金超声波焊层的组织和性能。     

直流横向磁场作用下钴基合金的组织及性能

为了提高堆焊层的性能,研究直流横向磁场对等离子弧堆焊层的组织和性能的影响.在低碳钢表面进行钴基合金粉末等离子弧堆焊时施加直流横向磁场,焊后对堆焊层进行硬度、磨损、显微组织以及X射线衍射分析,并系统地分析直流横向磁场对等离子堆焊层硬度和耐磨性的影响规律.结果表明,施加磁场时堆焊层性能比无磁场时堆焊层性能好.当堆焊电流为1...     

SUBSTRATE EFFECT ON HYDROGENATED MICROCRYSTALLINE SILICON FILMS DEPOSITED WITH VHF-PECVD TECHNIQUE

Raman spectra and scanning electron microscope （SEM） techniques were used to determine the structural properties of microcrb＇stalline silicon （μc-Si：H） films deposited on different substrates with the very high frequency plasma-enhanced chemical vapor deposition （VHF-PECVD） technique. Using the Raman spectra, the values of crystalline volume fraction Xc and average grain size d are 86%, 12.3nm; 65%, 5.45nm; and 38%, 4.05nm, for single crystalline silicon wafer, coming 7059 glass, and general optical glass substrates, respectively. The SEM images further demonstrate the substrate effect on the film surface roughness. For the single crystalline silicon wafer and Coming 7059 glass, the surfaces of the μc-Si：H films are fairly smooth because of the homogenous growth or h＇ttle lattice mismatch. But for general optical glass, the surface of the μ-Si： H film is very rough, thus the growing surface roughness affects the crystallization process and determines the average grain size of the deposited material. Moreover, with the measurements of thickness, photo and dark conductivity, photosensitivity and activation energy, the substrate effect on the deposition rate, optical and electrical properties of the μc-Si：H thin films have also been investigated. On the basis of the above results, it can be concluded that the substrates affect the initial growing layers acting as a seed for the formation of a crystalline-like material and then the deposition rates, optical and electrical properties are also strongly influenced, hence, deposition parameter optimization is the key method that can be used to obtain a good initial growing layer, to realize the deposition of μc-Si：H films with device-grade quality on cheap substrates such as general glass.     

Nanostructured superhard films as typical nanomaterials

The advantages of the use of film samples for nanomaterials science studies are characterized. In particular, nanograined structures are readily obtained in film samples, whereas they are difficult to obtain in bulk samples. The properties of superhard multilayer nitride films, including the deformation of TiN and TiB₂ films during indentation, the effect of an additional external magnetic field on the (TiB₂-B₄C) films' nanostructure and microhardness, as well as galvanomagnetic properties of TiN films are described and discussed in detail. It was found that generally the microhardness of multilayer nitride films increased with the number of layers, except if the two layers mutually dissolved. A microhardness of 78 GPa was achieved in 180 layer TiN/NbN films. TiB₂ films had an inhomogeneous step-like deformation pattern under indentation, in contrast to TiN films, which had a homogeneous deformation pattern, probably due to a slip along columnar grain boundaries. Application of an additional external magnetic field during magnetron sputter deposition increased hardness and smoothness of both crystalline and amorphous (TiB₂-B₄C) films. Decreasing the grain size of TiN films decreased the electron mobility while maintaining the carrier density. The oxygen and carbon distribution can be considered as random in TiN films with the grain size interval of 10-30 nm.