棒状光子晶体光纤种子光透镜耦合分析

本文对单透镜耦合系统进行了分析。分别模拟计算了当耦合透镜F=103.26 mm时耦合效率与透镜位置的关系,以及当透镜与光纤端面的距离为120 mm时耦合效率与透镜焦距的关系。利用单透镜耦合方式对棒状光子晶体光纤进行了耦合实验,实验所用种子源是波长λ=1030 nm的SESAM锁模固体激光器(M2≤1.2),所用棒状光子晶体光纤的芯径D=85 μm(模场直径DMF=65 μm),测得耦合效率约为35%~42%。由于光纤中掺杂的Yb3+离子对1030 nm波长的激光有一定的吸收作用,因此实际的耦合效率应该大于测定值。     

非均匀关联光束在湍流中的单模光纤耦合效率（特邀）

研究了非均匀关联光束经过大气湍流后的光纤耦合效率。研究结果表明,大气湍流中非均匀关联光束的光纤耦合效率优于传统高斯谢尔模光束;且调控光束相干长度可以提高光纤耦合效率;针对不同传输距离的情况,可以通过调控光束相干长度实现耦合效率的最优化。同时,文中还讨论了光源参数:束腰和波长;耦合透镜参数:接收孔径和焦距;湍流强度对光纤耦合效率的影响。该研究成果证明光场相干结构调控技术在提升光纤耦合效率中的应用,在自由空间激光通信研究领域存在重要价值。     

梯度折射率光纤透镜的薄透镜等效分析

从等效薄透镜的角度对热扩束（TEC）光纤＋无芯光纤＋梯度折射率（GRlN）光纤透镜进行了细致的理论分析，其中TEC光纤调整输入高斯光束的束腰半径，无芯光纤控制束腰和薄透镜间的距离，GRIN光纤两主面之间部分等效为薄透镜，其焦距由光纤的折射率分布参数g决定。推导了出射高斯光束的束腰半径和工作距离的解析表达式，进而对该光纤透镜做了数值模拟，讨论了无芯光纤和GRIN多模光纤的长度对光纤透镜参数的影响。当GRIN光纤透镜用作准直器使用时，其最大束腰直径可达到80／1m，可将单模光纤的远场发散角压缩8倍；用于MEMS器件时，最大工作距离可达到3mm。     

利用单透镜结构实现自由空间激光进入单模光纤的耦合研究

自由空间激光与光纤的高效耦合可大幅降低激光 能量损耗。基于高斯光束通过透镜的传输规律,分 析经过单透镜变换后的激光光束特性,即像方激光光束特性。对自由空间激光与单模光纤的 优化耦合进行研究。通过分析匹配单透镜参数对像方光束的影响, 选择单透镜合适焦距参数,实现激光与光纤参数的高效匹配,满足激光光束的像方腰斑小于 10 μm且数值孔 径小于0.12。通过实例,分析采用焦距为5mm的单透镜对780 nm空间激光到单模光纤的耦合效 率,结果表明自由空间激光到单模光纤的耦合效率高达90%。该耦合 系统结构简单,可实现激光由自由空间到至光纤的高效率传输。     

应用于金属焊接的光纤耦合输出2kW半导体激光光源

报道了一种高效节能、千瓦级光纤柔性输出半导体激光焊接光源。采用半导体激光合束技术,研制出2246W半导体激光合束光源,电光效率达43.6%;通过聚焦耦合,实现从600μm芯径、数值孔径0.2的光纤连续输出功率为2104W,光纤耦合效率达93.7%;在光纤输出端采用放大率1颐1的成像系统,到达工件表面的功率为2084W,光参量积为46.89mm·mrad,在束腰处测得光斑直径600μm,光功率密度为7.37×105 W/cm2,可以满足金属薄板焊接的激光加工要求     

大功率激光光纤透镜耦合系统设计

在不考虑像差的情况下,采用傍轴光线传输ABCD定律,结合混合模系数M(或M^2)的定义,研究了大功率LD尾纤输出的混合模类高斯光束经透镜之后束腰及束腰位置和发散角的变化,并在此基础上,利用MATLAB软件中的优化设计工具,提出一种设计大功率激光光纤准直——聚焦双透镜耦合系统的简单方法,最后给出了一个光子晶体光纤激光器透镜耦合系统设计实例．     

15 kW光纤耦合半导体激光淬火光源

针对激光淬火在大型风电轴承生产中的实际需求,研制了一种功率高达15 kW的光纤耦合半导体激光淬火光源。该光源先采用915 nm和976 nm两个波段各8个宏通道冷却技术封装的半导体激光微巴条阵列作为发光单元,进行空间、偏振及波长合束,在光纤芯径为200μm、数值孔径为0.22的光纤中实现了超过800 W的连续输出,电光转换效率整体达到45%以上。再通过19×1光纤合束器对19个800 W模块进行合束,由输出端口光纤直径为1 mm的光纤耦合输出。光束经过由微透镜阵列与聚焦镜复合的加工头,光斑匀化,最终输出了功率大于15 kW、光斑尺寸为165 mm×25 mm的激光束,满足了大型风电主轴轴承滚道面淬火需求。     

基于微透镜阵列的高效率光纤耦合系统设计

光纤耦合是半导体激光器集成光源进一步改善输出光束质量和远距离传输的重要手段。然而,由于半导体激光器单管体积和散热的限制,合成后激光光源的输出光束光参量积仍较大,不利于与单根多模光纤的耦合;直接与光纤束耦合又受到光纤束填充比的限制。针对多个半导体激光器单管集成的光源,采用倒置前端光学放大系统,对合成光束直径进行压缩;并采用六方排列的微透镜阵列作为耦合元件,使其光瞳成像在光纤端面,从而实现微透镜与光纤的一对一耦合,得到理论无损耗的高效光纤耦合系统。为了改善光场边缘像差影响,采用空心光管进一步匀化光场分布,且减小了边缘光线的发散角,提高了边缘光线的成像质量,优化后的系统耦合效率达98%。这一系统利用微透镜阵列将光束分束、成像,克服了集成光源输出光束光参量积较大不易与单根光纤耦合的缺点;通过使微透镜的入瞳成像在光纤端面,且光纤束的排列与微透镜阵列排列相同,提高了光束与光纤束的耦合效率。     

高速光探测器模块中的耦合理论和模拟

高速光器件的封装工艺中,光耦合占据重要的地位.文中针对一种高速光探测器中常用的光耦合方式——倾斜端面光纤到倒装芯片的耦合,提出了光纤耦合的柱透镜光学模型,并通过理论和光学软件模拟了各种封装工艺条件对耦合效率的影响.模拟结果显示,耦合效率的大小由光纤位置、芯片透镜尺寸和激光光源光斑形状共同决定.     

高速光探测器模块中的耦合理论和模拟

高速光器件的封装工艺中,光耦合占据重要的地位.文中针对一种高速光探测器中常用的光耦合方式——倾斜端面光纤到倒装芯片的耦合,提出了光纤耦合的柱透镜光学模型,并通过理论和光学软件模拟了各种封装工艺条件对耦合效率的影响.模拟结果显示,耦合效率的大小由光纤位置、芯片透镜尺寸和激光光源光斑形状共同决定.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.